Ama-2 inch Silicon Carbide Wafers 6H noma 4H N-uhlobo noma amaSemi-Insulating SiC Substrates

2 intshi Silicon Carbide Wafers 6H noma 4H N-uhlobo noma Semi-Insulating SiC Substrates Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon carbide (SiC), eyaziwa nangokuthi i-carborundum, i-semiconductor equkethe i-silicon ne-carbon enefomula yamakhemikhali i-SiC. I-SiC isetshenziswa kumishini ye-semiconductor electronics esebenza emazingeni okushisa aphezulu noma ama-voltage aphezulu, noma kokubili.I-SiC futhi ingenye yezingxenye ezibalulekile ze-LED, iyindawo engaphansi edumile yamadivayisi e-GaN akhulayo, futhi isebenza njengesisakazi sokushisa endaweni ephezulu. ama-LED amandla.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Imikhiqizo Enconyiwe

I-4H SiC wafer N-uhlobo

Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm

Umumo: ku-axis 4.0˚ kuya ku-<1120> ± 0.5˚

Ukumelana: <0.1 ohm.cm

Ukuqina: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm

I-4H SiC wafer Semi-insulating

Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm

Umumo: ku-eksisi {0001} ± 0.25˚

Ukumelana: >1E5 ohm.cm

Ukuqina: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm

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