Ama-Wafer e-Silicon Carbide angu-2 intshi angu-6H noma angu-4H N noma ama-Substrate e-SiC angenawo umswakama

Incazelo emfushane:

I-Silicon carbide (i-SiC), eyaziwa nangokuthi i-carborundum, iyi-semiconductor equkethe i-silicon ne-carbon enefomula yamakhemikhali i-SiC. I-SiC isetshenziswa kumadivayisi kagesi e-semiconductor asebenza emazingeni okushisa aphezulu noma kuma-voltage aphezulu, noma kokubili. I-SiC nayo ingenye yezingxenye ezibalulekile ze-LED, iyi-substrate ethandwayo yokukhulisa amadivayisi e-GaN, futhi isebenza njengesisabalalisi sokushisa kuma-LED anamandla aphezulu.

Sithumelele i-imeyili

Izici

Imikhiqizo Enconyiwe

Uhlobo lwe-N lwe-wafer ye-SiC engu-4H

Ububanzi: 2 amayintshi 50.8mm | 4 amayintshi 100mm | 6 amayintshi 150mm

Ukuma: i-axis engaphandle kwe-4.0˚ ibheke ku-<1120> ± 0.5˚

Ukumelana: < 0.1 ohm.cm

Ubulukhuni: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm

I-wafer ye-SiC engu-4H evikela kancane

Ububanzi: 2 amayintshi 50.8mm | 4 amayintshi 100mm | 6 amayintshi 150mm

Ukuma: ku-axis {0001} ± 0.25˚

Ukumelana: >1E5 ohm.cm

Ubulukhuni: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm

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