I-Silicon Carbide (SiC) I-Substrate Enekristalu Elilodwa – I-Wafer engu-10×10mm

Incazelo emfushane:

I-10×10mm Silicon Carbide (SiC) single-crystal substrate wafer iyinto ye-semiconductor esebenza kahle kakhulu eyenzelwe izinhlelo zokusebenza zamandla kagesi zesizukulwane esilandelayo kanye ne-optoelectronic. Iqukethe ukuhanjiswa kokushisa okumangalisayo, igebe elikhulu, kanye nokuqina kwamakhemikhali okuhle kakhulu, ama-substrate e-SiC ahlinzeka ngesisekelo samadivayisi asebenza kahle ngaphansi kwezimo zokushisa okuphezulu, imvamisa ephezulu, kanye ne-voltage ephezulu. Lawa ma-substrate anqunywa ngokunemba abe ama-chip square angu-10×10mm, alungele ucwaningo, ukwenziwa kweprototyping, kanye nokwakhiwa kwamadivayisi.

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe we-Silicon Carbide (SiC) substrate wafer

Ukubuka konke kwe-Silicon Carbide (SiC) substrate wafer

II-wafer ye-substrate ye-silicon Carbide (SiC) engu-10×10mmiyinto ye-semiconductor esebenza kahle kakhulu eyenzelwe izinhlelo zokusebenza zamandla kagesi zesizukulwane esilandelayo kanye nezinhlelo zokusebenza ze-optoelectronic. Iqukethe ukuhanjiswa kokushisa okumangalisayo, igebe elikhulu, kanye nokuqina kwamakhemikhali okuhle kakhulu, i-Silicon Carbide (SiC) substrate wafer inikeza isisekelo samadivayisi asebenza kahle ngaphansi kwezimo zokushisa okuphezulu, imvamisa ephezulu, kanye ne-voltage ephezulu. Lezi substrates zinqunywa ngokunembaAma-chips ayizikwele angu-10 × 10mm, ilungele ucwaningo, ukudweba amaphrothokholi, kanye nokwakhiwa kwamadivayisi.

Isimiso Sokukhiqiza se-Silicon Carbide (SiC) substrate wafer

I-Silicon Carbide (SiC) substrate wafer ikhiqizwa ngokusebenzisa izindlela zokukhulisa i-Physical Vapor Transport (PVT) noma i-sublimation. Inqubo iqala nge-high-purity SiC powder efakwe ku-graphite crucible. Ngaphansi kwamazinga okushisa aphezulu adlula u-2,000°C kanye nendawo elawulwayo, i-sublimation powder ifakwa ku-vapor bese iphinda ifake ku-seed crystal eqondiswe ngokucophelela, yakha i-single crystal ingot enkulu, encishisiwe.

Uma i-SiC boule isikhulile, idlula:

Ukusikwa kwe-Ingot: Amasaha ensimbi edayimane aqondile asika i-SiC ingot ibe ama-wafer noma ama-chips.

Ukugoqa nokugaya: Izindawo ziyasicaba ukuze kususwe amamaki esaha futhi kufezwe ubukhulu obufanayo.

Ukupholisha Kwemishini Yamakhemikhali (i-CMP): Kufinyelela isiphetho sesibuko esilungele i-epi esinobulukhuni obuphansi kakhulu.

Ukufaka i-doping ngokuzithandela: Ukufaka i-nitrogen, i-aluminium, noma i-boron kungafakwa ukuze kulungiswe izakhiwo zikagesi (uhlobo lwe-n noma uhlobo lwe-p).

Ukuhlolwa kwekhwalithi: I-metrology ethuthukisiwe iqinisekisa ukuthi i-wafer flat, ukujiya okufanayo, kanye nobuningi beziphambeko kuhlangabezana nezidingo eziqinile ze-semiconductor-grade.

Le nqubo enezinyathelo eziningi iholela kuma-chips e-wafer e-substrate angu-10×10mm e-Silicon Carbide (SiC) aqinile alungele ukukhula kwe-epitaxial noma ukwenziwa kwedivayisi ngqo.

Izici Zezinto Ezibalulekile Ze-Silicon Carbide (SiC) substrate wafer

I-Silicon Carbide (SiC) substrate wafer yenziwe ngokuyinhloko nge-4H-SiC or 6H-SiCizinhlobo eziningi:

4H-SiC:Inamandla okunyakaza kwama-electron amaningi, okwenza ifaneleke kakhulu kumadivayisi kagesi afana nama-MOSFET nama-diode e-Schottky.
6H-SiC:Inikeza izakhiwo ezihlukile zezingxenye ze-RF kanye ne-optoelectronic.

Izakhiwo ezibalulekile zomzimba ze-Silicon Carbide (SiC) substrate wafer:

Igebe elikhulu:~3.26 eV (4H-SiC) – ivumela i-voltage ephezulu yokuqhekeka kanye nokulahlekelwa okuphansi kokushintsha.
Ukuqhuba kwe-thermal:3–4.9 W/cm·K – isusa ukushisa ngempumelelo, iqinisekisa ukuzinza ezinhlelweni zamandla aphezulu.
Ubulukhuni:~9.2 esikalini se-Mohs – kuqinisekisa ukuqina komshini ngesikhathi sokucubungula nokusebenza kwedivayisi.

Ukusetshenziswa kwe-Silicon Carbide (SiC) substrate wafer

Ukuguquguquka kwe-Silicon Carbide (SiC) substrate wafer kuyenza ibe yigugu emikhakheni eminingi:

Amandla kagesi: Isisekelo sama-MOSFET, ama-IGBT, nama-diode e-Schottky asetshenziswa ezimotweni zikagesi (ama-EV), izinsiza zikagesi zezimboni, kanye nama-inverter amandla avuselelekayo.

Amadivayisi e-RF kanye ne-Microwave: Asekela ama-transistors, ama-amplifier, kanye nezingxenye ze-radar ze-5G, i-satellite, kanye nezinhlelo zokusebenza zokuzivikela.

Ama-Optoelectronics: Asetshenziswa kuma-LED e-UV, kuma-photodetector, kanye nama-diode e-laser lapho ukukhanya okuphezulu kwe-UV kanye nokuqina kubalulekile khona.

Izindiza Nokuvikela: I-substrate ethembekile yama-elekthronikhi aqinile, ashisa kakhulu futhi aqiniswe yimisebe.

Izikhungo Zocwaningo Namanyuvesi: Kuhle kakhulu ezifundweni zesayensi yezinto ezibonakalayo, ukuthuthukiswa kwamadivayisi e-prototype, kanye nokuhlolwa kwezinqubo ezintsha ze-epitaxial.

Imininingwane yama-Silicon Carbide (SiC) substrate wafer Chips

Impahla	Inani
Usayizi	Isikwele esingu-10mm × 10mm
Ubukhulu	330–500 μm (kungenziwa ngezifiso)
Uhlobo lwe-Polytype	4H-SiC noma 6H-SiC
Ukuqondiswa	Indiza engu-C, ngaphandle kwe-axis (0°/4°)
Ukuqedwa Komphezulu	Ipholishwe ohlangothini olulodwa noma ohlangothini oluphindwe kabili; ilungele i-epi iyatholakala
Izinketho Zokusebenzisa Izidakamizwa	Uhlobo lwe-N noma uhlobo lwe-P
Ibanga	Ibanga lokucwaninga noma ibanga ledivayisi

Imibuzo Evame Ukubuzwa mayelana ne-Silicon Carbide (SiC) substrate wafer

Umbuzo 1: Yini eyenza i-Silicon Carbide (SiC) substrate wafer ibe ngcono kune-silicon wafers yendabuko?
I-SiC inikeza amandla ensimu okuqhekeka okuphezulu okungu-10×, ukumelana nokushisa okuphezulu, kanye nokulahlekelwa okuphansi kokushintsha, okwenza kube kuhle kakhulu kumadivayisi asebenza kahle kakhulu, anamandla aphezulu i-silicon engakwazi ukuwasekela.

Umbuzo 2: Ingabe i-10×10mm Silicon Carbide (SiC) substrate wafer inganikezwa ngezingqimba ze-epitaxial?
Yebo. Sihlinzeka ngezingxenye ezilungele i-epi futhi singaletha ama-wafer anezendlalelo ze-epitaxial ezenziwe ngokwezifiso ukuze kuhlangatshezwane nezidingo ezithile zamadivayisi kagesi noma zokukhiqiza ze-LED.

Umbuzo 3: Ingabe osayizi abangokwezifiso kanye namazinga okusebenzisa izidakamizwa ayatholakala?
Impela. Nakuba ama-chip angu-10×10mm ejwayelekile ocwaningweni nasekuthathweni kwamasampula edivayisi, ubukhulu obungokwezifiso, ukujiya, kanye namaphrofayili okusebenzisa izidakamizwa kuyatholakala uma kuceliwe.

Umbuzo 4: Ziqine kangakanani lezi zi-wafer ezindaweni ezibucayi?
I-SiC igcina ubuqotho besakhiwo kanye nokusebenza kukagesi okungaphezu kuka-600°C nangaphansi kwemisebe ephezulu, okwenza ibe yindawo ekahle kakhulu yezindiza kanye ne-electronics yezinga lezempi.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.