Ukumelana ne-silicon carbide eside crystal furnace ukukhula 6/8/12inch intshi SiC ingot crystal PVT indlela

Ukumelana ne-silicon carbide isithando somlilo eside sekristalu esikhula ngamasentimitha angu-6/8/12 ubude Indlela ye-SiC ingot crystal PVT Isithombe Esifakiwe

Incazelo emfushane:

Isithando sokukhulisa ukumelana ne-silicon carbide (indlela ye-PVT, indlela yokudlulisa umhwamuko ongokoqobo) iyithuluzi elibalulekile lokukhula kwe-silicon carbide (SiC) crystal eyodwa ngesimiso sokushisa okuphezulu kwe-sublimation-recrystallization. Lobu buchwepheshe busebenzisa ukushisa okumelana (umzimba wokushisa we-graphite) ukuze kuncishiswe izinto zokusetshenziswa ze-SiC ekushiseni okuphezulu okungu-2000 ~ 2500℃, futhi kuphinde kuncishiswe endaweni yokushisa okuphansi (i-seed crystal) ukuze kwakhiwe i-SiC single crystal esezingeni eliphezulu (4H/6H-SiC). Indlela ye-PVT iyinqubo eyinhloko yokukhiqizwa kwe-SiC substrates ezingamasentimitha angu-6 nangaphansi, esetshenziswa kabanzi ekulungiseleleni i-substrate yama-semiconductors anamandla (njenge-MOSFETs, SBD) kanye namadivayisi e-radio frequency (GaN-on-SiC).

Sithumelele i-imeyili

Izici

Isimiso sokusebenza:

1. Ukulayisha izinto ezingavuthiwe: i-SiC powder (noma ibhlogo) emsulwa kakhulu ebekwe phansi kwe-graphite crucible (indawo yokushisa ephezulu).

2. Indawo yokuhlanza/yokuhlanzeka: vala igumbi lesithando (<10⁻³ mbar) noma dlulisa igesi engasebenzi (Ar).

3. Ukushisa okuphezulu kwe-sublimation: ukumelana nokushisa kufike ku-2000 ~ 2500℃, ukubola kwe-SiC kube yi-Si, i-Si₂C, i-SiC₂ nezinye izingxenye zesigaba segesi.

4. Ukudluliswa kwesigaba segesi: i-gradient yokushisa iqhubela ukusabalala kwezinto zesigaba segesi endaweni yokushisa ephansi (ekugcineni kwembewu).

5. Ukukhula kwekristalu: Isigaba segesi siphinde siphinde siqine ebusweni bekristalu yembewu bese sikhula ngendlela eqondile eceleni kwe-C-axis noma i-A-axis.

Amapharamitha ayisihluthulelo:

1. I-gradient yokushisa: 20~50℃/cm (lawula izinga lokukhula kanye nobuningi beziphambeko).

2. Ingcindezi: 1 ~ 100mbar (ingcindezi ephansi yokunciphisa ukufakwa kokungcola).

3. Izinga lokukhula: 0.1 ~ 1mm/h (okuthinta ikhwalithi yekristalu kanye nokusebenza kahle kokukhiqiza).

Izici eziyinhloko:

(1) Ikhwalithi yekristalu
Ubuningi obuphansi besici: ubuningi be-microtubule <1 cm⁻², ubuningi be-dislocation 10³~10⁴ cm⁻² (ngokusebenzisa ukwenza ngcono imbewu kanye nokulawula inqubo).

Ukulawulwa kohlobo lwe-Polycrystalline: kungakhula ngo-4H-SiC (okujwayelekile), 6H-SiC, 4H-SiC isilinganiso >90% (kudingeka kulawulwe ngokunembile i-gradient yokushisa kanye nesilinganiso se-stoichiometric sesigaba segesi).

(2) Ukusebenza kwemishini
Ukuqina kokushisa okuphezulu: izinga lokushisa lomzimba elifudumeza i-graphite >2500℃, umzimba wesithando usebenzisa ukwakheka kokufakwa kwe-insulation okunezingqimba eziningi (njenge-graphite felt + ijazi elipholile ngamanzi).

Ukulawula ukufana: Ukushintshashintsha kwezinga lokushisa le-axial/radial lika-±5 ° C kuqinisekisa ukuhambisana kobubanzi bekristalu (ukuphambuka kobukhulu be-substrate obungamasentimitha angu-6 <5%).

Izinga lokuzenzakalela: Uhlelo lokulawula lwe-PLC oluhlanganisiwe, ukuqapha izinga lokushisa ngesikhathi sangempela, ingcindezi kanye nezinga lokukhula.

(3) Izinzuzo zobuchwepheshe
Ukusetshenziswa okuphezulu kwezinto zokwakha: izinga lokuguqulwa kwezinto zokwakha >70% (kungcono kunendlela ye-CVD).

Ukuhambisana nosayizi omkhulu: Ukukhiqizwa kwesisindo esingamasentimitha ayi-6 kufeziwe, amasentimitha ayi-8 asesigabeni sokuthuthukiswa.

(4) Ukusetshenziswa kwamandla kanye nezindleko
Ukusetshenziswa kwamandla kwesithando somlilo esisodwa kungu-300~800kW·h, okubalwa u-40%~60% wezindleko zokukhiqiza ze-substrate ye-SiC.

Ukutshalwa kwezimali kwemishini kuphezulu (1.5M 3M ngeyunithi ngayinye), kodwa izindleko zeyunithi ziphansi kunendlela ye-CVD.

Izinhlelo zokusebenza eziyinhloko:

1. Ama-elekthronikhi anamandla: I-substrate ye-SiC MOSFET ye-inverter yemoto kagesi kanye ne-inverter ye-photovoltaic.

2. Amadivayisi e-Rf: Isiteshi sesisekelo se-5G i-GaN-on-SiC epitaxial substrate (ikakhulukazi i-4H-SiC).

3. Amadivayisi emvelo aqine kakhulu: izinzwa zokushisa okuphezulu kanye nomfutho ophezulu wemishini yezindiza kanye namandla enuzi.

Amapharamitha obuchwepheshe:

Imininingwane	Imininingwane
Ubukhulu (L × W × H)	2500 × 2400 × 3456 mm noma wenze ngezifiso
Ububanzi Bokubhoboza	900 mm
Ukucindezela Okuphezulu Kokushaja I-Vacuum	6 × 10⁻⁴ Pa (ngemuva kwehora eli-1.5 le-vacuum)
Izinga Lokuvuza	≤5 Pa/12h (ukubhaka)
Ububanzi bomgodi wokujikeleza	50 mm
Isivinini Sokujikeleza	0.5–5 ngomzuzu
Indlela Yokushisa	Ukushisa okumelana nogesi
Izinga Lokushisa Eliphezulu Lesithando	2500°C
Amandla Okushisa	40 kW × 2 × 20 kW
Ukulinganisa Izinga Lokushisa	I-pyrometer ye-infrared enemibala emibili
Ibanga Lokushisa	900–3000°C
Ukunemba Kwezinga Lokushisa	±1°C
Ububanzi Bokucindezela	1–700 mbar
Ukunemba Kokulawula Ingcindezi	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Uhlobo Lokusebenza	Izinketho zokuphepha eziphansi, ezenziwe ngesandla/ezizenzakalelayo
Izici Ongakukhetha	Ukulinganisa izinga lokushisa okubili, izindawo eziningi zokushisa

Izinsizakalo ze-XKH:

I-XKH inikeza insizakalo yenqubo yonke yesithando somlilo se-SiC PVT, okuhlanganisa ukwenza ngezifiso imishini (ukwakheka kwensimu yokushisa, ukulawula okuzenzakalelayo), ukuthuthukiswa kwenqubo (ukulawulwa kwesimo sekristalu, ukwenza ngcono amaphutha), ukuqeqeshwa kobuchwepheshe (ukusebenza nokugcinwa) kanye nokusekelwa ngemuva kokuthengisa (ukufakwa esikhundleni kwezingxenye ze-graphite, ukulinganiswa kwensimu yokushisa) ukusiza amakhasimende ukufeza ukukhiqizwa kwesisindo sekristalu esisezingeni eliphezulu. Siphinde sinikeze izinsizakalo zokuthuthukisa inqubo ukuze sithuthukise njalo isivuno sekristalu kanye nokusebenza kahle kokukhula, ngesikhathi esijwayelekile sezinyanga ezi-3-6.