I-silicon carbide ukumelana nesithando somlilo sekristalu eside esikhula ngo-6/8/12inch intshi ye-SiC ingot crystal PVT indlela

I-silicon carbide ukumelana nesithando somlilo sekristalu eside esikhula ngo-6/8/12inch intshi ye-SiC ingot crystal indlela ye-PVT Isithombe esifakiwe

Incazelo emfushane:

Isithando somlilo sokukhula kwe-silicon carbide (indlela ye-PVT, indlela yokudlulisa umhwamuko) iyithuluzi elibalulekile lokukhula kwe-silicon carbide (SiC) ikristalu eyodwa ngomgomo wokushisa okuphezulu kwe-sublimation-recrystallization. Ubuchwepheshe busebenzisa ukushisa kokumelana (i-graphite heat body) ukuze kuncishiswe izinto ezingavuthiwe ze-SiC ekushiseni okuphezulu okungu-2000 ~ 2500 ℃, futhi kuphinde kukhanye endaweni yokushisa ephansi (ikristalu yembewu) ukwenza i-SiC single crystal (4H/6H-SiC) yekhwalithi ephezulu. Indlela ye-PVT iyinqubo evamile yokukhiqiza ngobuningi bama-substrates e-SiC angama-intshi angu-6 nangaphansi, esetshenziswa kakhulu ekulungiseleleni i-substrate yama-semiconductors amandla (njengama-MOSFET, SBD) kanye namadivayisi amafrikhwensi omsakazo (GaN-on-SiC).

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Umgomo wokusebenza:

1. Ukulayisha impahla eluhlaza: ukuhlanzeka okuphezulu kwe-SiC powder (noma i-block) ebekwe phansi kwe-graphite crucible (indawo yokushisa ephezulu).

2. Vacuum/indawo engasebenzi: vacuum igumbi lesithando somlilo (<10⁻³ mbar) noma khipha igesi engasebenzi (Ar).

3. Ukushisa okuphezulu kwe-sublimation: ukushisa kokumelana ku-2000 ~ 2500℃, ukubola kwe-SiC ku-Si, Si₂C, SiC₂ nezinye izingxenye zesigaba segesi.

4. Ukudluliswa kwesigaba segesi: i-gradient yezinga lokushisa ihambisa ukusabalalisa kwezinto zesigaba segesi endaweni yokushisa ephansi (ukuphela kwembewu).

5. Ukukhula kwekristalu: Isigaba segesi siphinda sikhanye phezu kwe-Seed Crystal futhi sikhule ngendlela eqondile eduze kwe-C-eksisi noma i-A-eksisi.

Amapharamitha angukhiye:

1. I-gradient yezinga lokushisa: 20~50℃/cm (lawula izinga lokukhula nokuminyana kokukhubazeka).

2. Ukucindezela: 1 ~ 100mbar (ingcindezi ephansi yokunciphisa ukufakwa kokungcola).

3.Izinga lokukhula: 0.1~1mm/h (lithinta ikhwalithi yekristalu nokusebenza kahle kokukhiqiza).

Izici eziyinhloko:

(1) Ikhwalithi yekristalu
Ukuminyana okungamaphutha: ukuminyana kwe-microtubule <1 cm⁻², ukuminyana kwe-dislocation 10³~10⁴ cm⁻² (ngokuthuthukisa imbewu nokulawula inqubo).

Ukulawulwa kohlobo lwe-Polycrystalline: ingakhula i-4H-SiC (ejwayelekile), i-6H-SiC, i-4H-SiC isilinganiso> 90% (idinga ukulawula ngokunembile izinga lokushisa kanye nesilinganiso segesi se-stoichiometric).

(2) Ukusebenza kwezisetshenziswa
Izinga lokushisa eliphakeme lokuzinza: izinga lokushisa lomzimba we-graphite>2500℃, umzimba wesithando somlilo wamukela ukwakheka kokufakwa kwezingqimba eziningi (okufana ne-graphite ezwakalayo + ibhantshi elipholiswe ngamanzi).

Ukulawula okufanayo: Ukushintshashintsha kwezinga lokushisa kwe-Axial/radial okungu-±5 ° C kuqinisekisa ukuvumelana kobubanzi bekristalu (ukuchezuka kogqinsi lwe-substrate engamayintshi angu-6 <5%).

I-Degree of automation: Uhlelo oludidiyelwe lokulawula lwe-PLC, ukuqapha ngesikhathi sangempela izinga lokushisa, ingcindezi kanye nezinga lokukhula.

(3) Izinzuzo zobuchwepheshe
Ukusetshenziswa okuphezulu kwezinto ezibonakalayo: izinga lokuguqulwa kwezinto ezingavuthiwe >70% (elingcono kunendlela ye-CVD).

Ukuhambisana kosayizi omkhulu: Ukukhiqizwa kwe-6-inch mass kufinyelelwe, i-8-intshi isesigabeni sokuthuthukiswa.

(4) Ukusetshenziswa kwamandla kanye nezindleko
Ukusetshenziswa kwamandla kwesithando somlilo esisodwa kungu-300 ~ 800kW · h, okuhlanganisa u-40% ~ 60% wezindleko zokukhiqiza ze-SiC substrate.

Ukutshalwa kwezimali kwemishini kuphezulu (1.5M 3M iyunithi ngayinye), kodwa izindleko zeyunithi ye-substrate ziphansi kunendlela ye-CVD.

Izinhlelo zokusebenza eziyinhloko:

1. Ama-electronics kagesi: I-substrate ye-SiC MOSFET ye-inverter yemoto kagesi kanye ne-photovoltaic inverter.

2. Amadivayisi we-Rf: Isiteshi sesisekelo se-5G i-GaN-on-SiC epitaxial substrate (ikakhulukazi i-4H-SiC).

3. Imishini yemvelo eyeqisayo: izinga lokushisa eliphezulu nezinzwa zomfutho ophezulu we-aerospace kanye nemishini yamandla enyukliya.

Imingcele yezobuchwepheshe:

Ukucaciswa	Imininingwane
Ubukhulu (L × W × H)	2500 × 2400 × 3456 mm noma wenze ngendlela oyifisayo
I-Crucible Diameter	900 mm
I-Ultimate Vacuum Pressure	6 × 10⁻⁴ Pa (ngemuva kwe-vacuum engu-1.5h)
Isilinganiso sokuvuza	≤5 Pa/12h (ukubhaka)
Ukuzungezisa Shaft Ububanzi	50 mm
Isivinini Sokuzungezisa	0.5-5 rpm
Indlela Yokushisisa	Ukushisa kokumelana nogesi
Ubukhulu Bokushisa Kwesithando Somlilo	2500°C
Amandla Okushisa	40 kW × 2 × 20 kW
Ukulinganisa Izinga lokushisa	I-infrared pyrometer enemibala emibili
Izinga Lokushisa	900–3000°C
Ukunemba kwezinga lokushisa	±1°C
Ibanga Lokucindezela	1-700 mbar
Ukunemba Kokulawula Ukucindezela	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Uhlobo Lokusebenza	Ukulayisha okuphansi, izinketho zokuphepha ezenziwa ngesandla/ezizenzakalelayo
Izici Ongazikhethela	Isilinganiso sokushisa esikabili, izindawo zokushisisa eziningi

Izinsizakalo ze-XKH:

I-XKH inikeza yonke isevisi yenqubo yesithando somlilo se-SiC PVT, okuhlanganisa ukwenziwa ngokwezifiso kwemishini (i-thermal field design, control automatic), ukuthuthukiswa kwenqubo (crystal shape control, defect optimization), ukuqeqeshwa kobuchwepheshe (ukusebenza nokugcinwa) kanye nokusekelwa ngemva kokuthengisa (ukushintsha izingxenye zegraphite, ukulinganiswa kwensimu eshisayo) ukusiza amakhasimende afinyelele izinga eliphezulu lokukhiqizwa kwe-sic crystal. Futhi sihlinzeka ngezinsizakalo zokuthuthukisa inqubo ukuze sithuthukise ngokuqhubekayo isivuno sekristalu nokusebenza kahle kokukhula, ngesikhathi sokuhola esijwayelekile sezinyanga ezi-3-6.