Umshini wokusika we-Silicon carbide diamond wire 4/6/8/12 inch SiC ingot processing

Incazelo emfushane:

Umshini wokusika we-Silicon carbide Diamond Wire uwuhlobo lwemishini yokucubungula enembayo ephezulu enikezelwe kusilayidi se-silicon carbide (SiC) ingot, kusetshenziswa ubuchwepheshe be-Diamond Wire Saw, ngocingo lwedayimane oluhamba ngesivinini esiphezulu (ububanzi bomugqa ongu-0.1 ~ 0.3mm) ukuya ku-SiC ingot yokusika izintambo eziningi, ukufeza ukunemba okuphezulu, ukulungiswa kwe-wafer enomonakalo ophansi. Izinto ezisetshenziswayo zisetshenziswa kakhulu ku-SiC power semiconductor (MOSFET/SBD), idivayisi yefrikhwensi yomsakazo (GaN-on-SiC) kanye ne-optoelectronic device substrate processing, iyithuluzi elibalulekile ochungechungeni lwemboni ye-SiC.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Umgomo wokusebenza:

1. Ukulungiswa kwe-ingot: I-SiC ingot (4H/6H-SiC) igxilile endaweni yokusika ngokusebenzisa i-fixture ukuze kuqinisekiswe ukunemba kwendawo (±0.02mm).

2. Ukunyakaza komugqa wedayimane: umugqa wedayimane (izinhlayiya zedayimane ezifakwe ugesi phezulu) ziqhutshwa uhlelo lwesondo lomhlahlandlela ukuze lijikeleze ngesivinini esikhulu (isivinini somugqa 10~30m/s).

3. Isiphakeli sokusika: ingot idliswa ngendlela ebekiwe, futhi umugqa wedayimane usikwa kanyekanye ngemigqa ehambisanayo eminingi (imigqa engu-100~500) ukuze kwakheke amawafa amaningi.

4. Ukupholisa nokususwa kwe-chip: Fafaza isipholile (amanzi akhishwe i-deionized + izithasiselo) endaweni yokusika ukuze unciphise umonakalo wokushisa futhi ususe ama-chips.

Amapharamitha angukhiye:

1. Isivinini sokusika: 0.2 ~ 1.0mm/min (kuye ngokuthi i-crystal direction kanye nogqinsi lwe-SiC).

2. Ukushuba komugqa: 20~50N (iphezulu kakhulu kulula ukwephula umugqa, iphansi kakhulu ithinta ukunemba kokusika).

3.Wafer ukujiya: standard 350~500μm, esilucwecwana ingafinyelela 100μm.

Izici eziyinhloko:

(1) Ukunemba kokusika
Ukubekezelela ukujiya: ±5μm (@350μm wafer), okungcono kunokusika udaka okuvamile (±20μm).

Ubulukhuni bobuso: Ra<0.5μm (akukho ukugaya okwengeziwe okudingekayo ukuze kuncishiswe inani lokucubungula okulandelayo).

I-Warpage: <10μm (yehlisa ubunzima bokupholisha okulandelayo).

(2) Ukusebenza kahle kokucubungula
Ukusika kwemigqa eminingi: ukusika izingcezu eziyi-100 ~ 500 ngesikhathi, ukwandisa umthamo wokukhiqiza izikhathi ezi-3 ~ 5 (vs. Ukusika komugqa owodwa).

Impilo yomugqa: Ulayini wedayimane ungasika u-100~300km SiC (kuya ngobulukhuni be-ingot kanye nokwenza kahle kwenqubo).

(3) Ukucubungula umonakalo ophansi
Ukuphuka komphetho: <15μm (ukusika kwendabuko> 50μm), thuthukisa isivuno se-wafer.

Isendlalelo somonakalo ongaphansi komhlaba: <5μm (nciphisa ukususwa kokupholisha).

(4) Ukuvikelwa kwemvelo kanye nomnotho
Akukho ukungcoliswa kodaka: Izindleko ezincishisiwe zokulahla uketshezi olungcolile uma kuqhathaniswa nokusika udaka.

Ukusetshenziswa kwempahla: Ukusika ukulahlekelwa <100μm/ umsiki, ukonga izinto zokusetshenziswa ze-SiC.

Umthelela wokusika:

1. Ikhwalithi ye-wafer: ayikho imifantu emikhulu ebusweni, amaphutha amancane amancane (isandiso esilawulekayo sokususa). Ingafaka ngokuqondile isixhumanisi sokupholisha esimangelengele, ifinyeze ukugeleza kwenqubo.

2. Ukungaguquguquki: ukuchezuka kogqinsi kwe-wafer eqeqebeni kungu-<±3%, kulungele ukukhiqizwa okuzenzakalelayo.

I-3.Ukusebenza: Ukusekela i-4H / 6H-SiC ukusika ingot, ehambisana nohlobo lwe-conductive / semi-insulated.

Ukucaciswa kobuchwepheshe:

Ukucaciswa	Imininingwane
Ubukhulu (L × W × H)	2500x2300x2500 noma wenze ngendlela oyifisayo
Icubungula ububanzi bosayizi wento	4, 6, 8, 10, 12 amayintshi we-silicon carbide
Ubulukhuni bobuso	I-Ra≤0.3u
Isivinini sokusika esimaphakathi	0.3mm/min
Isisindo	5.5t
Izinyathelo zokusetha inqubo yokusika	≤30 izinyathelo
Umsindo wezisetshenziswa	≤80 dB
I-Steel wire tension	0~110N(0.25 wire tension ngu-45N)
Isivinini socingo lwensimbi	0~30m/S
Amandla aphelele	50kw
Idayimane yentambo yedayimane	≥0.18mm
Qeda ukucaba	≤0.05mm
Izinga lokusika nokuphuka	≤1% (ngaphandle kwezizathu zomuntu, izinto ze-silicon, umugqa, ukugcinwa nezinye izizathu)

Izinsizakalo ze-XKH:

I-XKH inikeza yonke inqubo yenkonzo yomshini wokusika we-silicon carbide diamond wire, okuhlanganisa ukukhethwa kwemishini (ububanzi bocingo / ukufanisa isivinini socingo), ukuthuthukiswa kwenqubo (ukulungiswa kwepharamitha yokusika), ukunikezwa kwezinto ezisetshenziswayo (i-diamond wire, isondo lomhlahlandlela) nokusekelwa ngemva kokuthengisa (ukugcinwa kwemishini, ukuhlaziya ikhwalithi yokusika), ukusiza amakhasimende afinyelele isivuno esiphezulu (> 95%), ukukhiqizwa kwe-SiC wafer mass ephansi. Iphinde inikeze ukuthuthukiswa okwenziwe ngokwezifiso (okufana nokusika okuncanyana kakhulu, ukulayisha okuzenzakalelayo kanye nokukhipha) ngesikhathi sokuhola samaviki angu-4-8.