Umshini wokusika insimbi yedayimane ye-silicon carbide 4/6/8/12 intshi SiC ingot processing

Umshini wokusika ucingo lwedayimane le-silicon carbide 4/6/8/12 intshi SiC ingot processing Isithombe Esivelele

Incazelo emfushane:

Umshini wokusika i-silicon carbide Diamond Wire uwuhlobo lwemishini yokucubungula enembile kakhulu enikezelwe ku-silicon carbide (SiC) ingot slice, kusetshenziswa ubuchwepheshe be-Diamond Wire Saw, ngokusebenzisa i-wire diamond ehamba ngesivinini esikhulu (ububanzi bomugqa ongu-0.1 ~ 0.3mm) kuya ku-SiC ingot multi-wire cutting, ukuze kufezwe ukulungiswa kwe-wafer okunembile kakhulu, okunomonakalo omncane. Le mishini isetshenziswa kabanzi ku-SiC power semiconductor (MOSFET/SBD), idivayisi ye-radio frequency (GaN-on-SiC) kanye nokucubungula i-optoelectronic device substrate, iyimishini ebalulekile ochungechungeni lwemboni ye-SiC.

Sithumelele i-imeyili

Izici

Isimiso sokusebenza:

1. Ukulungiswa kwe-Ingot: I-SiC ingot (4H/6H-SiC) inamathele epulatifomu yokusika ngokusebenzisa i-fixture ukuqinisekisa ukunemba kwendawo (± 0.02mm).

2. Ukunyakaza komugqa wedayimane: umugqa wedayimane (izinhlayiya zedayimane ezifakwe ngogesi ebusweni) uqhutshwa uhlelo lwesondo eliqondisayo ukuze kujikelezwe ngesivinini esikhulu (isivinini somugqa 10 ~ 30m/s).

3. Ukudla okusikiwe: i-ingot iphakelwa ngendlela ebekwe ngayo, bese umugqa wedayimane unqunywa ngasikhathi sinye ngemigqa eminingi ehambisanayo (imigqa eyi-100 ~ 500) ukuze kwakhiwe ama-wafer amaningi.

4. Ukupholisa nokususa ama-chip: Futha i-coolant (amanzi angenawo ama-ion + izithasiselo) endaweni yokusika ukuze unciphise umonakalo wokushisa futhi ususe ama-chip.

Amapharamitha ayisihluthulelo:

1. Isivinini sokusika: 0.2 ~ 1.0mm/min (kuye ngokuthi i-crystal direction kanye nobukhulu be-SiC).

2. Ukuqina komugqa: 20~50N (umugqa uphakeme kakhulu kulula ukuwuphula, ukunemba kokusika kuphansi kakhulu).

3. Ubukhulu be-wafer: ejwayelekile 350 ~ 500μm, i-wafer ingafinyelela ku-100μm.

Izici eziyinhloko:

(1) Ukunemba kokusika
Ukubekezelela ukujiya: ±5μm (@350μm wafer), kungcono kunokusika okujwayelekile kodaka (±20μm).

Ubulukhuni bomphezulu: Ra<0.5μm (akukho ukugaya okwengeziwe okudingekayo ukunciphisa inani lokucubungula okulandelayo).

I-Warpage: <10μm (kunciphisa ubunzima bokupholisha okulandelayo).

(2) Ukusebenza kahle kokucubungula
Ukusikwa kwemigqa eminingi: ukusika izingcezu eziyi-100 ~ 500 ngesikhathi, kwandisa amandla okukhiqiza izikhathi ezi-3 ~ 5 (uma kuqhathaniswa nokusikwa komugqa owodwa).

Impilo yomugqa: Umugqa wedayimane ungasika i-SiC eyi-100 ~ 300km (kuye ngokuthi i-ingot iqine kangakanani kanye nokwenza ngcono inqubo).

(3) Ukucubungula umonakalo ophansi
Ukuphuka komphetho: <15μm (ukusika okuvamile >50μm), kuthuthukisa isivuno se-wafer.

Isendlalelo somonakalo ongaphansi komhlaba: <5μm (nciphisa ukususwa kokupholisha).

(4) Ukuvikelwa kwemvelo kanye nomnotho
Akukho ukungcoliswa kwe-mortar: Izindleko zokulahla udoti zinciphile uma kuqhathaniswa nokusika i-mortar.

Ukusetshenziswa kwezinto: Ukusika ukulahlekelwa <100μm/ umsiki, konga izinto zokusetshenziswa ze-SiC.

Umphumela wokusika:

1. Ikhwalithi ye-wafer: akukho mifantu emikhulu ebusweni, amaphutha ambalwa amancane (isandiso sokudilika esingalawuleki). Ingangena ngqo esixhumanisini sokupholisha esingalingani, ifinyeze ukuhamba kwenqubo.

2. Ukungaguquguquki: ukuphambuka kobukhulu be-wafer eqoqweni kungu-<±3%, kufanelekile ekukhiqizweni okuzenzakalelayo.

3.Ukusebenza: Sekela ukusika kwe-ingot engu-4H/6H-SiC, ehambisana nohlobo olusebenzisa amandla/olungenawo ugesi.

Imininingwane yobuchwepheshe:

Imininingwane	Imininingwane
Ubukhulu (L × W × H)	2500x2300x2500 noma wenze ngezifiso
Ububanzi bosayizi wezinto zokucubungula	Amasentimitha angu-4, 6, 8, 10, 12 e-silicon carbide
Ubulukhuni bomphezulu	Ra≤0.3u
Isivinini sokusika esimaphakathi	0.3mm/umzuzu
Isisindo	5.5t
Izinyathelo zokusetha inqubo yokusika	izinyathelo ezingu-≤30
Umsindo wemishini	≤80 dB
Ukuqina kwensimbi yensimbi	0~110N(ukucindezeleka kwentambo okungu-0.25 kungu-45N)
Isivinini sensimbi	0~30m/S
Amandla aphelele	50kw
Ububanzi bentambo yedayimane	≥0.18mm
Ukuphela kwesicaba	≤0.05mm
Izinga lokusika nokuphula	≤1% (ngaphandle kwezizathu zabantu, izinto ze-silicon, umugqa, ukulungiswa nezinye izizathu)

Izinsizakalo ze-XKH:

I-XKH inikeza insizakalo yenqubo yonke yomshini wokusika insimbi yedayimane ye-silicon carbide, okuhlanganisa ukukhethwa kwemishini (ububanzi bentambo/ukulinganisa isivinini sentambo), ukuthuthukiswa kwenqubo (ukwenziwa ngcono kwamapharamitha okusika), ukuhlinzekwa kwezinto ezisetshenziswayo (ucingo lwedayimane, isondo lokuqondisa) kanye nokusekelwa kwangemva kokuthengisa (ukugcinwa kwemishini, ukuhlaziywa kwekhwalithi yokusika), ukusiza amakhasimende ukuthi athole isivuno esiphezulu (>95%), ukukhiqizwa kwesisindo se-SiC wafer okungabizi kakhulu. Iphinde inikeze ukuthuthukiswa okwenziwe ngokwezifiso (njengokusika okuncane kakhulu, ukulayisha okuzenzakalelayo kanye nokulayisha) ngesikhathi sokuhola samaviki angu-4-8.