I-SiC

I-Silicon Carbide engu-4H-SiC engu-6 inches, i-Dummy Grade
Uhlobo lwe-SiC Ingot 4H Dia 4inch 6inch Ubukhulu 5-10mm Ucwaningo / Ibanga Eliyindilinga
I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo Lokuqina Okuphezulu Ukumelana Nokugqwala Ibanga Eliphezulu Lokupholisha
I-Wafer ye-Silicon Carbide engu-2 intshi engu-6H-N Uhlobo lwe-Prime Grade Research Grade Dummy Grade engu-330μm engu-430μm Ubukhulu
I-substrate ye-silicon carbide engu-2 intshi engu-6H-N ububanzi obuphindwe kabili obucwebezelayo obungu-50.8mm ibanga lokucwaninga lebanga lokukhiqiza
Izingxenyana ze-SiC Composite ze-N-Type Dia6inch I-monocrystalline esezingeni eliphezulu kanye ne-substrate esezingeni eliphansi
Izingxenyana ze-SiC Composite ezifakwa kancane kancane i-Dia2inch 4inch 6inch 8inch HPSI
I-N-Type SiC on Si Composite Substrates Dia6inch
I-SiC substrate Dia200mm 4H-N kanye ne-HPSI Silicon carbide
I-substrate ye-SiC engu-3 intshi Ukukhiqizwa kwe-Dia 76.2mm 4H-N
I-SiC substrate P kanye ne-D grade Dia50mm 4H-N 2inch
Uhlobo lwe-SiC Ingot 4H-N Dummy grade 2inch 3inch 4inch 6inch ubukhulu: ＞10mm

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