I-SiC
-
SiC Ingot 4H uhlobo Dia 4inch 6inch Ukuqina 5-10mm Ucwaningo / Dummy Ibanga
-
I-Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
-
I-2inch Silicon Carbide Wafer 6H-N Uhlobo Lwebanga Le-Prime Ibanga Ucwaningo Ibanga Le-Dummy Ibanga 330μm 430μm Ukuqina
-
I-2inch silicon carbide substrate 6H-N enezinhlangothi ezimbili ezipholishiwe ububanzi 50.8mm ibanga lokukhiqiza ibanga locwaningo
-
I-N-Type SiC Composite Substrates Dia6inch Ikhwalithi ephezulu ye-monocrystaline ne-substrate yekhwalithi ephansi
-
I-Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
-
I-N-Type SiC ku-Si Composite Substrates Dia6inch
-
I-SiC substrate i-Dia200mm 4H-N ne-HPSI Silicon carbide
-
3inch SiC substrate Production Dia76.2mm 4H-N
-
I-SiC substrate P kanye ne-D grade Dia50mm 4H-N 2inch
-
I-SiC Ingot 4H-N uhlobo lwe-Dummy grade 2inch 3inch 4inch 6inch ukujiya:＞10mm
-
200mm SiC substrate dummy grade 4H-N 8inch SiC wafer