I-SiC
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I-4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ye-MOS noma i-SBD
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I-SiC Epitaxial Wafer Yamadivayisi Amandla – 4H-SiC, N-type, Low Defect Density
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4H-N Uhlobo lwe-SiC Epitaxial Wafer High Voltage High Frequency
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3 inch High Purity (Akulungisiwe) I-Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya
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4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
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Isicwecwana esicwebezelayo, isicwecwana esiyisafire, isicwecwana se-silicon, isicwecwe se-SiC, 2inch 4inch 6inch, Ubugqinsi obugqize ngegolide 10nm 50nm 100nm
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I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili.
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I-SiC substrate 3inch 350um ukujiya HPSI uhlobo Prime Grade Dummy grade
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I-Silicon Carbide SiC Ingot engu-6inch N yohlobo lweDummy/ugqinsi lwebanga lokuqala lungenziwa ngokwezifiso
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6 ku-Silicon Carbide 4H-SiC Semi-Insulating Ingot, i-Dummy Grade