I-SiC
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I-Silicon Carbide (SiC) I-Substrate Enekristalu Elilodwa – I-Wafer engu-10×10mm
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I-wafer ye-4H-N HPSI SiC 6H-N 6H-P 3C-N SiC Epitaxial ye-MOS noma i-SBD
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I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici
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I-4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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Ama-Silicon Carbide Wafers angamasentimitha angu-3 angenawo umswakama (i-HPSl)
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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu
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4H-N/6H-N SiC Wafer Ukukhiqizwa kabusha kocwaningo lwe-Dummy grade Dia150mm Silicon carbide substrate
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I-wafer embozwe nge-Au，i-wafer yesafire，i-wafer ye-silicon，i-wafer ye-SiC ，2 intshi 4 intshi 6 intshi，Ubukhulu obumbozwe ngegolide 10 nm 50 nm 100 nm
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I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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I-substrate ye-Sic silicon carbide engu-2 intshi 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili Ukushisa okuphezulu Ukusetshenziswa kwamandla aphansi
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I-substrate ye-SiC 3inch 350um ubukhulu be-HPSI Uhlobo lwe-Prime Grade Ibanga eliyi-dummy
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I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade thickness can ba eyenziwe ngokwezifiso