I-SiC substrate P-type 4H/6H-P 3C-N 4inch enogqinsi lwama-350um Ibanga Lokukhiqiza Ibanga leDummy

Incazelo emfushane:

I-substrate ye-P-type 4H/6H-P 3C-N 4-intshi ye-SiC, enogqinsi lwama-350 μm, iwumsebenzi we-semiconductor osebenza kahle kakhulu osetshenziswa kakhulu ekukhiqizweni kwemishini kagesi. Le substrate yaziwa ngokuguquguquka kwayo okushisayo, ukwehla kwamandla kagesi aphezulu, ukumelana nezinga lokushisa elidlulele nezindawo ezigqwalile, le substrate ilungele izinhlelo zokusebenza zikagesi. I-substrate yebanga lokukhiqiza isetshenziswa ekukhiqizeni okukhulu, okuqinisekisa ukulawulwa kwekhwalithi okuqinile nokuthembeka okuphezulu kumadivayisi kagesi athuthukile. Ngaleso sikhathi, i-dummy-grade substrate isetshenziselwa ngokuyinhloko ukulungisa iphutha, ukulinganisa imishini, kanye ne-prototyping. Izakhiwo eziphakeme ze-SiC ziyenza ibe ukukhetha okuhle kakhulu kumadivayisi asebenza endaweni enezinga lokushisa eliphezulu, amandla kagesi aphezulu, kanye nemvamisa ephezulu, okuhlanganisa amadivayisi kagesi nezinhlelo ze-RF.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

4inch SiC substrate P-uhlobo 4H/6H-P 3C-N ithebula lepharamitha

4 intshi ububanzi SiliconI-Carbide (SiC) Substrate Ukucaciswa

Ibanga			Zero MPD Production Ibanga (Z Ibanga)	Ukukhiqizwa Okujwayelekile Ibanga (P Ibanga)	Dummy Grade (D Ibanga)
Ububanzi			99.5 mm~100.0 mm
Ubukhulu			350 μm ± 25 μm
I-Wafer Orientation			I-off aksisi: 2.0°-4.0° ukuya [112(-)0] ± 0.5° ngo-4H/6H-P, On eksisi:〈111〉± 0.5° ku-3C-N
I-Micropipe Density			0 cm-2
Ukungazweli	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Isisekelo se-Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Ubude Befulethi obuyisisekelo			32.5 mm ± 2.0 mm
Ubude Befulethi besibili			18.0 mm ± 2.0 mm
I-Flat Orientation yesibili			I-silicon ibheke phezulu: 90° CW. kusuka kuPrime flat±5.0°
Ukukhishwa komkhawulo			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni			I-Polish Ra≤1 nm
			I-CMP Ra≤0.2 nm		I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light			Lutho		Ubude obuqongelelwayo ≤ 10 mm, ubude obubodwa≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu			Lutho		Indawo eqoqiwe≤3%
I-Visual Carbon Inclusions			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light			Lutho		Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Aphakeme Ngokukhanya Okunamandla			Akukho okuvunyelwe ≥0.2mm ububanzi nokujula		5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity			Lutho
Ukupakisha			I-Multi-wafer Cassette noma Isiqukathi Esiyisicwecwana Esisodwa

Amanothi:

※ Imikhawulo yokukhubazeka isebenza kuyo yonke indawo yewafer ngaphandle kwendawo engabaliwe enqenqemeni. # Imihuzuko kufanele ibhekwe ku-Si face kuphela.

I-P-type 4H/6H-P 3C-N 4-inch SiC substrate enogqinsi lwama-350 μm isetshenziswa kabanzi ekukhiqizeni okuthuthukisiwe kwemishini kagesi namandla. Ngokusebenza okuhle kakhulu kwe-thermal, i-voltage ephezulu yokuwohloka, kanye nokumelana okuqinile nezindawo ezimbi kakhulu, le substrate ilungele ugesi wamandla asebenza kakhulu njengamaswishi ane-voltage ephezulu, ama-inverter, namadivayisi e-RF. Ama-substrates ebanga lokukhiqiza asetshenziswa ekukhiqizeni okukhulu, okuqinisekisa ukusebenza kwedivayisi okuthembekile, nokunemba okuphezulu, okubalulekile kuma-electronics wamandla kanye nezinhlelo zokusebenza ze-high-frequency. Ngakolunye uhlangothi, ama-substrates e-Dummy-grade, asetshenziselwa ikakhulukazi ukulinganisa inqubo, ukuhlolwa kwemishini, nokuthuthukiswa kwe-prototype, okusiza ukugcina ukulawulwa kwekhwalithi nokuvumelana kwenqubo ekukhiqizeni kwe-semiconductor.

UkucaciswaIzinzuzo ze-N-type SiC composite substrates zihlanganisa

High Thermal Conductivity: Ukukhipha ukushisa okusebenzayo kwenza i-substrate ilungele izinga lokushisa eliphezulu kanye nezicelo zamandla aphezulu.
High Breakdown Voltage: Isekela ukusebenza kwe-high-voltage, iqinisekisa ukwethembeka kugesi wamandla kanye namadivayisi we-RF.
Ukumelana Nendawo Enzima: Ihlala isikhathi eside ezimeni ezimbi kakhulu ezifana namazinga okushisa aphezulu kanye nezindawo ezibolayo, okuqinisekisa ukusebenza okuhlala isikhathi eside.
Ukukhiqiza-Ibanga Ukunemba: Iqinisekisa ukusebenza kwekhwalithi ephezulu nokuthembekile ekukhiqizeni ngezinga elikhulu, ezifanele amandla athuthukile kanye nezinhlelo zokusebenza ze-RF.
I-Dummy-Grade yokuhlolwa: Inika amandla ukulinganiswa kwenqubo okunembile, ukuhlolwa kwezisetshenziswa, kanye ne-prototyping ngaphandle kokufaka engozini amawafa ebanga lokukhiqiza.

Sekukonke, i-substrate ye-P-type 4H/6H-P 3C-N 4-inch SiC enogqinsi lwama-350 μm inikeza izinzuzo ezibalulekile zezinhlelo zokusebenza ze-elekthronikhi ezisebenza kahle kakhulu. I-conductivity yayo ephezulu ye-thermal kanye ne-voltage yokuwohloka yenza kube kuhle ezindaweni eziphezulu zamandla kanye nezinga lokushisa eliphezulu, kanti ukumelana kwayo nezimo ezinzima kuqinisekisa ukuqina nokuthembeka. I-substrate yebanga lokukhiqiza iqinisekisa ukusebenza okunembayo nokungaguquguquki ekukhiqizeni ngezinga elikhulu izinto zikagesi zamandla kanye namadivayisi e-RF. Ngaleso sikhathi, i-dummy-grade substrate ibalulekile ekulinganisweni kwenqubo, ukuhlolwa kwemishini, kanye ne-prototyping, ukusekela ukulawulwa kwekhwalithi nokungaguquguquki ekukhiqizeni kwe-semiconductor. Lezi zici zenza ama-substrates e-SiC asebenziseke ngezindlela eziningi ezinhlelweni ezithuthukile.