I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lokukhiqiza Ibanga eliyi-dummy
I-substrate engu-4 intshi ye-SiC ithebula lamapharamitha angu-P angu-4H/6H-P angu-3C-N
4 ububanzi be-intshi i-SiliconI-substrate ye-Carbide (SiC) Imininingwane
| Ibanga | Ukukhiqizwa kwe-MPD okungekho Ibanga (Z) Ibanga) | Ukukhiqizwa Okujwayelekile Ibanga (P) Ibanga) | Ibanga Eliyimbumbulu (D Ibanga) | ||
| Ububanzi | 99.5 mm~100.0 mm | ||||
| Ubukhulu | 350 μm ± 25 μm | ||||
| Ukuqondiswa kwe-Wafer | I-axis evaliwe: 2.0°-4.0° ngase-[11]20] ± 0.5° yamahora angu-4/6-P, Oi-n axis:〈111〉± 0.5° ye-3C-N | ||||
| Ubuningi be-Micropipe | 0 cm-2 | ||||
| Ukumelana | uhlobo lwe-p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| uhlobo lwe-n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Ukuqondiswa Okuyisisekelo Okuyisicaba | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Ubude Obuphansi Obuyinhloko | 32.5 mm ± 2.0 mm | ||||
| Ubude Besibili Obuyisicaba | 18.0 mm ± 2.0 mm | ||||
| Ukuqondiswa Kwesibili Okuyisicaba | I-silicon ibheke phezulu: 90° CW. kusuka ku-Prime flat±5.0° | ||||
| Ukukhishwa Komphetho | 3 mm | 6 mm | |||
| I-LTV/TTV/Umnsalo/I-Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Ubulukhuni | I-Polish Ra≤1 nm | ||||
| I-CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu | Akukho | Ubude obuhlanganisiwe ≤ 10 mm, ubude obubodwa ≤2 mm | |||
| Amapuleti e-Hex Ngokukhanya Okuphezulu | Indawo eqongelelayo ≤0.05% | Indawo ehlanganisiwe ≤0.1% | |||
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Akukho | Indawo eqongelelekayo ≤3% | |||
| Ukufakwa kwekhabhoni ebonakalayo | Indawo eqongelelayo ≤0.05% | Indawo eqongelelayo ≤3% | |||
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | Akukho | Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer | |||
| Ama-Edge Chips Aphezulu Ngokukhanya Okunamandla | Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm | 5 kuvunyelwe, ≤1 mm ngayinye | |||
| Ukungcoliswa Komphezulu We-Silicon Ngu-High Intensity | Akukho | ||||
| Ukupakisha | Ikhasethi ye-Multi-wafer noma i-Single Wafer | ||||
Amanothi:
※Imikhawulo yamaphutha isebenza ebusweni bonke be-wafer ngaphandle kwendawo engafakwanga unqenqema. # Imihuzuko kufanele ihlolwe ebusweni be-Si kuphela.
I-substrate ye-P-type 4H/6H-P 3C-N 4-inch SiC enobukhulu obungu-350 μm isetshenziswa kabanzi ekukhiqizweni kwemishini kagesi neyamandla okuthuthukisiwe. Njengoba ine-conductivity enhle kakhulu yokushisa, i-voltage ephezulu yokuqhekeka, kanye nokumelana okunamandla ezindaweni ezibucayi, le substrate ilungele ama-electronics anamandla asebenza kahle njengezishintshi ze-voltage ephezulu, ama-inverter, namadivayisi e-RF. Ama-substrate ebanga lokukhiqiza asetshenziswa ekukhiqizweni okukhulu, okuqinisekisa ukusebenza kwedivayisi okuthembekile nokunembile, okubalulekile kuma-electronics anamandla kanye nezinhlelo zokusebenza ze-frequency ephezulu. Ama-substrate ebanga eliyi-dummy, ngakolunye uhlangothi, asetshenziselwa kakhulu ukulinganisa inqubo, ukuhlolwa kwemishini, kanye nokuthuthukiswa kwe-prototype, okusiza ukugcina ukulawula ikhwalithi kanye nokuvumelana kwenqubo ekukhiqizweni kwe-semiconductor.
Izinzuzo ze-substrates ze-N-type SiC ezihlanganisiwe zifaka phakathi
- Ukushisa Okuphezulu Kokushisa: Ukushabalalisa ukushisa okusebenzayo kwenza i-substrate ifaneleke kakhulu ekusetshenzisweni kwezinga lokushisa eliphezulu kanye namandla aphezulu.
- I-Voltage Ephezulu Yokuqhekeka: Isekela ukusebenza kwe-high-voltage, iqinisekisa ukuthembeka kumadivayisi kagesi namadivayisi e-RF.
- Ukumelana Nezindawo Ezinzima: Ihlala isikhathi eside ezimweni ezimbi kakhulu njengamazinga okushisa aphezulu kanye nezindawo ezigqwalisayo, okuqinisekisa ukusebenza okuhlala isikhathi eside.
- Ukunemba Kwezinga Lokukhiqiza: Iqinisekisa ukusebenza kwekhwalithi ephezulu nokuthembekile ekukhiqizeni okukhulu, ifanelekela ukusetshenziswa kwamandla athuthukisiwe kanye nezinhlelo zokusebenza ze-RF.
- Izinga Eliyize Lokuhlola: Ivumela ukulinganiswa kwenqubo okunembile, ukuhlolwa kwemishini, kanye nokwenza amaphrothotayipi ngaphandle kokubeka engcupheni ama-wafer ebanga lokukhiqiza.
Sekukonke, i-substrate ye-P-type 4H/6H-P 3C-N 4-inch SiC enobukhulu obungu-350 μm inikeza izinzuzo ezibalulekile zezinhlelo zokusebenza ze-elekthronikhi ezisebenza kahle kakhulu. Ukushisa kwayo okuphezulu kanye ne-voltage yokuqhekeka kwenza kube kuhle kakhulu ezindaweni ezinamandla aphezulu kanye nezishisa kakhulu, kuyilapho ukumelana kwayo nezimo ezinzima kuqinisekisa ukuqina nokuthembeka. I-substrate yezinga lokukhiqiza iqinisekisa ukusebenza okunembile nokungaguquguquki ekukhiqizweni okukhulu kwemishini kagesi kanye namadivayisi e-RF. Okwamanje, i-substrate yezinga eliyindilinga ibalulekile ekulinganisweni kwenqubo, ukuhlolwa kwemishini, kanye nokwenza ama-prototyping, okusekela ukulawulwa kwekhwalithi kanye nokuvumelana ekukhiqizweni kwe-semiconductor. Lezi zici zenza i-substrate ye-SiC ibe nezimo eziningi ezinhlelweni zokusebenza ezithuthukisiwe.
Umdwebo Oningiliziwe
