I-SiC substrate 3inch 350um ukujiya HPSI uhlobo Prime Grade Dummy grade

Incazelo emfushane:

Ama-wafers angu-3-inch High Purity Silicon Carbide (SiC) aklanyelwe ngokukhethekile ukufakwa kwezicelo kugesi wamandla, i-optoelectronics, nocwaningo oluthuthukisiwe. Atholakala ku-Production, Research, kanye Nama-Dummy Grades, lawa mawafa aletha ukumelana okukhethekile, ukuminyana okunesici esiphansi, kanye nekhwalithi ephezulu yendawo. Ngezakhiwo ezingagudluki ze-semi-insulating, zinikeza inkundla ekahle yokwakha amadivaysi asebenza kahle kakhulu asebenza ngaphansi kwezimo ezishisayo nezikagesi ngokwedlulele.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

Ipharamitha	Ibanga Lokukhiqiza	IBanga Lokucwaninga	Dummy Grade	Iyunithi
Ibanga	Ibanga Lokukhiqiza	IBanga Lokucwaninga	Dummy Grade
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ubukhulu	500 ± 25	500 ± 25	500 ± 25	µm
I-Wafer Orientation	Ku-eksisi: <0001> ± 0.5°	Ku-eksisi: <0001> ± 2.0°	Ku-eksisi: <0001> ± 2.0°	iziqu
I-Micropipe Density (MPD)	≤1	≤ 5	≤ 10	cm−2^-2−2
Ukungazweli Kagesi	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Kuhlehlisiwe	Kuhlehlisiwe	Kuhlehlisiwe
Isisekelo se-Flat Orientation	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	iziqu
Ubude Befulethi obuyisisekelo	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude Befulethi besibili	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
I-Flat Orientation yesibili	90° CW kusukela efulethini lokuqala ± 5.0°	90° CW kusukela efulethini lokuqala ± 5.0°	90° CW kusukela efulethini lokuqala ± 5.0°	iziqu
Ukukhishwa komkhawulo	3	3	3	mm
LTV/TTV/Bow/Warp	3/10 / ±30/40	3/10 / ±30/40	5/15 / ±40/45	µm
Ukuqina Kobuso	Ubuso beSi: CMP, C-face: Bupholishiwe	Ubuso beSi: CMP, C-face: Bupholishiwe	Ubuso beSi: CMP, C-face: Bupholishiwe
Imifantu (High-Intensity Light)	Lutho	Lutho	Lutho
I-Hex Plates (Ukukhanya Okunamandla Kakhulu)	Lutho	Lutho	Indawo eqoqiwe 10%	%
Izindawo ze-Polytype (Ukukhanya Okunamandla Kakhulu)	Indawo ehlanganisiwe 5%	Indawo eqoqiwe 20%	Indawo eqoqiwe 30%	%
Ukuklwebheka (Ukukhanya Okumandla Kakhulu)	≤ 5 imihuzuko, ubude obukhulayo ≤ 150	≤ 10 imihuzuko, ubude obuningi ≤ 200	≤ 10 imihuzuko, ubude obuningi ≤ 200	mm
I-Edge Chipping	Lutho ≥ 0.5 mm ububanzi/ukushona	2 okuvunyelwe ≤ 1 mm ububanzi/ukushona	5 okuvunyelwe ≤ 5 mm ububanzi/ukushona	mm
Ukungcoliswa kobuso	Lutho	Lutho	Lutho

Izinhlelo zokusebenza

1. High-Power Electronics
I-thermal conductivity ephakeme kanye ne-bandgap ebanzi yama-wafers e-SiC awenza alungele amandla aphezulu, amadivaysi amafrikhwensi aphezulu:
●Ama-MOSFET nama-IGBT okuguqulwa kwamandla.
● Amasistimu wamandla emoto kagesi athuthukile, afaka ama-inverter namashaja.
● Ingqalasizinda yegridi ehlakaniphile nezinhlelo zamandla avuselelekayo.
2. I-RF kanye neMicrowave Systems
Ama-substrates e-SiC anika amandla ama-high-frequency RF kanye nezicelo ze-microwave ezinokulahlekelwa okuncane kwesignali:
● Ezokuxhumana kanye nezinhlelo zesathelayithi.
● Amasistimu we-radar emkhathini.
●Izingxenye zenethiwekhi ye-5G ethuthukisiwe.
3. Ama-Optoelectronics nezinzwa
Izakhiwo eziyingqayizivele ze-SiC zisekela izinhlelo zokusebenza ezihlukahlukene ze-optoelectronic:
● Izitholi ze-UV zokuqapha imvelo nezinzwa zezimboni.
● I-LED ne-laser substrates yokukhanyisa-isimo esiqinile nezisetshenziswa ezinembayo.
●Izinzwa zokushisa okuphezulu kwe-aerospace nezimboni zezimoto.
4. Ucwaningo Nentuthuko
Ukwehlukahlukana kwamabanga (Ukukhiqiza, Ucwaningo, I-Dummy) kunika amandla ukuhlola okuphambili kanye ne-prototyping yedivayisi kuzemfundo nakwezimboni.

Izinzuzo

●Ukwethembeka:Ukumelana okuhle kakhulu nokuzinza kuwo wonke amabanga.
●Ukwenza ngokwezifiso:Ukuma ofanelanisiwe nokuqina ukuze kuhambisane nezidingo ezahlukahlukene.
●Ukuhlanzeka okuphezulu:Ukwakhiwa okungahlehlisiwe kuqinisekisa ukuhluka okuncane okuhlobene nokungcola.
●Scalability:Ihlangabezana nezidingo zakho kokubili ukukhiqizwa ngobuningi kanye nocwaningo lokuhlola.
Amawafa we-SiC angama-intshi angu-3 ayisango lakho lokuya kumadivayisi asebenza kahle kakhulu kanye nentuthuko yezobuchwepheshe emisha. Ngemibuzo kanye nemininingwane enemininingwane, xhumana nathi namuhla.

Isifinyezo

I-3-inch High Purity Silicon Carbide (SiC) Wafers, etholakala ku-Production, Research, kanye namaBanga e-Dummy, angama-premium substrates aklanyelwe ugesi wamandla aphezulu, amasistimu e-RF/microwave, optoelectronics, ne-R&D ethuthukisiwe. Lawa mawafa afaka izakhiwo ezingagudluki, ezivikela kancane ezinokumelana okuhle kakhulu (≥1E10 Ω·cm Yebanga Lokukhiqiza), ukuminyana kwe-micropipe ephansi (≤1 cm−2^-2−2), kanye nekhwalithi yendawo ehlukile. Zenzelwe izinhlelo zokusebenza ezisebenza kahle kakhulu, okuhlanganisa ukuguqulwa kwamandla, ezokuxhumana, izinzwa ze-UV, nobuchwepheshe be-LED. Ngomumo owenzeka ngendlela oyifisayo, ukuqhutshwa kwe-thermal okuphezulu, kanye nezakhiwo eziqinile zemishini, lawa mawafa e-SiC anika amandla ukwakhiwa kwedivayisi okusebenzayo, okuthembekile kanye nokuqanjwa kabusha okudabukisayo kuzo zonke izimboni.