I-substrate ye-SiC 3inch 350um ubukhulu be-HPSI Uhlobo lwe-Prime Grade Ibanga eliyi-dummy
Izakhiwo
| Ipharamitha | Ibanga Lokukhiqiza | Ibanga Locwaningo | Ibanga Eliyimbumbulu | Iyunithi |
| Ibanga | Ibanga Lokukhiqiza | Ibanga Locwaningo | Ibanga Eliyimbumbulu | |
| Ububanzi | 76.2 ± 0.5 | 76.2 ± 0.5 | 76.2 ± 0.5 | mm |
| Ubukhulu | 500 ± 25 | 500 ± 25 | 500 ± 25 | µm |
| Ukuqondiswa kwe-Wafer | I-On-axis: <0001> ± 0.5° | I-On-axis: <0001> ± 2.0° | I-On-axis: <0001> ± 2.0° | izinga |
| Ubuningi be-Micropipe (MPD) | ≤ 1 | ≤ 5 | ≤ 10 | cm−2^-2−2 |
| Ukumelana Nogesi | ≥ 1E10 | ≥ 1E5 | ≥ 1E5 | Ω·cm |
| I-Dopant | Kuhlehlisiwe | Kuhlehlisiwe | Kuhlehlisiwe | |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | {1-100} ± 5.0° | {1-100} ± 5.0° | {1-100} ± 5.0° | izinga |
| Ubude Obuphansi Obuyinhloko | 32.5 ± 3.0 | 32.5 ± 3.0 | 32.5 ± 3.0 | mm |
| Ubude Besibili Obuyisicaba | 18.0 ± 2.0 | 18.0 ± 2.0 | 18.0 ± 2.0 | mm |
| Ukuqondiswa Kwesibili Okuyisicaba | 90° CW kusukela efulethini eliyinhloko ± 5.0° | 90° CW kusukela efulethini eliyinhloko ± 5.0° | 90° CW kusukela efulethini eliyinhloko ± 5.0° | izinga |
| Ukukhishwa Komphetho | 3 | 3 | 3 | mm |
| I-LTV/TTV/Umnsalo/I-Warp | 3 / 10 / ±30 / 40 | 3 / 10 / ±30 / 40 | 5 / 15 / ±40 / 45 | µm |
| Ubulukhuni Bomphezulu | Ubuso obufanayo: CMP, ubuso obufanayo: Bupholishiwe | Ubuso obufanayo: CMP, ubuso obufanayo: Bupholishiwe | Ubuso obufanayo: CMP, ubuso obufanayo: Bupholishiwe | |
| Imifantu (Ukukhanya Okunamandla Aphezulu) | Akukho | Akukho | Akukho | |
| Amapuleti e-Hex (Ukukhanya Okunamandla Okuphezulu) | Akukho | Akukho | Indawo ehlanganisiwe 10% | % |
| Izindawo ze-Polytype (Ukukhanya Okunamandla Aphezulu) | Indawo ehlanganisiwe 5% | Indawo ehlanganisiwe 20% | Indawo ehlanganisiwe 30% | % |
| Ukuklwebheka (Ukukhanya Okunamandla Aphezulu) | ≤ imihuzuko emi-5, ubude obuhlanganisiwe ≤ 150 | ≤ imihuzuko eyi-10, ubude obuhlanganisiwe ≤ 200 | ≤ imihuzuko eyi-10, ubude obuhlanganisiwe ≤ 200 | mm |
| Ukuqhekeka Komphetho | Akukho ≥ ububanzi/ukujula okungu-0.5 mm | 2 kuvunyelwe ≤ 1 mm ububanzi/ukujula | 5 kuvunyelwe ≤ ububanzi/ukujula okungu-5 mm | mm |
| Ukungcoliswa Komphezulu | Akukho | Akukho | Akukho |
Izicelo
1. Izinto zikagesi Ezinamandla Aphezulu
Ukushisa okuphezulu kanye negebe elikhulu lama-wafer e-SiC kuwenza afaneleke kakhulu kumadivayisi anamandla aphezulu, anemvamisa ephezulu:
●Ama-MOSFET nama-IGBT okuguqula amandla.
●Izinhlelo zamandla ezimoto zikagesi ezithuthukisiwe, okuhlanganisa ama-inverter namashaja.
●Ingqalasizinda yegridi ehlakaniphile kanye nezinhlelo zamandla avuselelekayo.
2. Izinhlelo ze-RF kanye ne-Microwave
Ama-substrate e-SiC avumela izinhlelo zokusebenza ze-RF ezivame kakhulu kanye ne-microwave ngokulahlekelwa okuncane kwesiginali:
●Izinhlelo zokuxhumana kanye nezesathelayithi.
●Izinhlelo ze-radar zezindiza.
●Izingxenye zenethiwekhi ye-5G ezithuthukisiwe.
3. Ama-Optoelectronics kanye nama-Sensor
Izakhiwo ezihlukile ze-SiC zisekela izinhlelo zokusebenza ezahlukahlukene ze-optoelectronic:
●Izihloli ze-UV zokuqapha imvelo kanye nokuzwa kwezimboni.
●Izisekelo ze-LED neze-laser zokukhanyisa okuqinile kanye nezinsimbi zokunemba.
●Izinzwa zokushisa okuphezulu zezimboni zezindiza nezimoto.
4. Ucwaningo Nentuthuko
Ukuhlukahluka kwamabanga (Ukukhiqizwa, Ucwaningo, i-Dummy) kwenza kube lula ukuhlola okuseqophelweni eliphezulu kanye nokulingisa amadivayisi kwezemfundo kanye nasezimbonini.
Izinzuzo
●Ukuthembeka:Ukumelana okuhle kakhulu nokuqina kuwo wonke amazinga.
●Ukwenza ngokwezifiso:Ukwakheka kanye nobukhulu obufanele izidingo ezahlukene.
●Ukuhlanzeka Okuphezulu:Ukwakheka okungakaphucwanga kuqinisekisa ukwehluka okuncane okuhlobene nokungcola.
●Ukwanda:Ihlangabezana nezidingo zombili zokukhiqiza ngobuningi kanye nocwaningo lokuhlola.
Ama-wafer e-SiC ahlanzekile kakhulu angamasentimitha angu-3 ayisango lakho lokufinyelela kumadivayisi asebenza kahle kakhulu kanye nentuthuko yezobuchwepheshe obusha. Ukuze uthole imibuzo kanye nemininingwane eningiliziwe, xhumana nathi namuhla.
Isifinyezo
Ama-Wafers e-High Purity Silicon Carbide (SiC) angu-3 intshi, atholakala ku-Production, Research, kanye nama-Dummy Grades, ayizinsika zekhwalithi ephezulu ezenzelwe ama-electronics anamandla aphezulu, izinhlelo ze-RF/microwave, ama-optoelectronics, kanye ne-R&D ethuthukisiwe. Lawa ma-wafers anezici ezingavulwanga, ezivikela kancane ezinokumelana okuhle kakhulu (≥1E10 Ω·cm ye-Production Grade), ubuningi obuphansi be-micropipe (≤1 cm−2^-2−2), kanye nekhwalithi ephezulu yobuso. Alungiselelwe izinhlelo zokusebenza eziphezulu, kufaka phakathi ukuguqulwa kwamandla, ukuxhumana ngocingo, ukuzwa kwe-UV, kanye nobuchwepheshe be-LED. Ngokuqondiswa okwenziwe ngokwezifiso, ukuhanjiswa kokushisa okuphezulu, kanye nezakhiwo eziqinile zemishini, lawa ma-wafers e-SiC avumela ukwenziwa kwamadivayisi okusebenzayo nokuthembekile kanye nokusungula izinto ezintsha kuzo zonke izimboni.
Umdwebo Oningiliziwe
