Ipuleti/ithreyi ye-ceramic ye-SiC yesibambi se-wafer esingu-4inch 6inch se-ICP

Ipuleti/ithreyi ye-ceramic ye-SiC yesibambi se-wafer esingu-4inch 6inch sesithombe esifakiwe se-ICP

Incazelo emfushane:

Ipuleti le-ceramic le-SiC liyingxenye esebenza kahle kakhulu eyakhiwe kusukela ku-Silicon Carbide ehlanzekile kakhulu, eklanyelwe ukusetshenziswa ezindaweni ezishisa kakhulu, zamakhemikhali, nezemishini. Idume ngobulukhuni bayo obumangalisayo, ukuqhutshwa kokushisa okushisayo, kanye nokumelana nokugqwala, ipuleti le-SiC lisetshenziswa kabanzi njengesithwali esilucwecwana, i-susceptor, noma isakhi sesakhiwo ku-semiconductor, i-LED, i-photovoltaic, kanye nezimboni ze-aerospace.

Thumela i-imeyili kithi

Izici

Ipuleti le-ceramic ye-SiC Abstract

Ngokusimama okushisayo okuvelele okufika ku-1600 ° C kanye nokumelana okuhle kakhulu namagesi asebenzayo kanye nezindawo ze-plasma, ipuleti le-SiC liqinisekisa ukusebenza okungaguquki phakathi nezinqubo zokushisa ezishisa kakhulu, zokubeka, nokusabalalisa. I-microstructure yayo eminyene, engenazimbobo inciphisa ukukhiqizwa kwezinhlayiyana, ikwenze ilungele izinhlelo zokusebenza ezihlanzekile kakhulu ku-vacuum noma izilungiselelo zegumbi lokuhlanza.

SiC Ceramic plate Isicelo

1. Ukukhiqiza I-Semiconductor

Amapuleti e-ceramic e-SiC avame ukusetshenziswa njengabathwali be-wafer, ama-susceptors, namapuleti ahamba ngezinyawo emishinini yokwakha ye-semiconductor efana ne-CVD (Chemical Vapor Deposition), i-PVD (i-Physical Vapor Deposition), kanye nezinhlelo zokuhlanganisa. I-thermal conductivity enhle kakhulu kanye nokwanda okuphansi kokushisa kuzivumela ukuthi zigcine ukusabalalisa kwezinga lokushisa okufanayo, okubalulekile ekucutshungulweni kwe-wafer okunemba okuphezulu. Ukumelana kwe-SiC namagesi abolayo nama-plasma kuqinisekisa ukuqina ezindaweni ezinokhahlo, kusiza ukunciphisa ukungcoliswa kwezinhlayiyana nokugcinwa kwemishini.

2. Imboni ye-LED - ICP Etching

Emkhakheni wokukhiqiza we-LED, amapuleti e-SiC ayizingxenye ezibalulekile ezinhlelweni zokunamathisela ze-ICP (Inductively Coupled Plasma). Zisebenza njengezibambi ze-wafer, zinikeza inkundla ezinzile futhi eqinile ngokushisa okushisayo ukusekela ama-sapphire noma ama-wafers e-GaN ngesikhathi sokucutshungulwa kwe-plasma. Ukumelana ne-plasma yabo okuhle kakhulu, ukucaba kwendawo, nokuzinza kwe-dimensional kusiza ukuqinisekisa ukunemba okuphezulu nokufana, okuholela ekwenyukeni kwesivuno nokusebenza kwedivayisi kuma-chips e-LED.

3. I-Photovoltaics (PV) kanye ne-Solar Energy

Amapuleti e-ceramic e-SiC nawo asetshenziswa ekukhiqizeni amaseli elanga, ikakhulukazi ngesikhathi sokushiswa kwezinga lokushisa eliphezulu kanye nezinyathelo zokudonsa. Ukungangeni kwabo emazingeni okushisa aphakeme kanye nekhono lokumelana ne-warping kuqinisekisa ukucutshungulwa okungaguquki kwamawafa e-silicon. Ukwengeza, ingozi yabo yokungcola ephansi ibalulekile ekugcineni ukusebenza kahle kwamaseli e-photovoltaic.

I-SiC Ceramic plate Properties

1. Amandla Omshini Nokuqina Okungavamile

Amapuleti e-ceramic e-SiC abonisa amandla emishini aphezulu kakhulu, anamandla ajwayelekile okuguquguquka adlula ama-MPa angama-400 kanye nobulukhuni be-Vickers obufinyelela ku->2000 HV. Lokhu kubenza bamelane kakhulu nokuguga kwemishini, ukuhuzuka, kanye nokuguqulwa, okuqinisekisa impilo yesevisi ende ngisho nangaphansi komthwalo omkhulu noma ukuphindaphinda amabhayisikili ashisayo.

2. High Thermal Conductivity

I-SiC ine-thermal conductivity enhle kakhulu (imvamisa engu-120–200 W/m·K), eyivumela ukuthi isabalalise ngokulinganayo ukushisa endaweni yayo yonke. Lesi sakhiwo sibalulekile ezinqubweni ezifana ne-wafer etching, deposition, noma sintering, lapho ukufana kwezinga lokushisa kuthinta ngokuqondile isivuno nekhwalithi yomkhiqizo.

3. Superior Thermal Ukuzinza

Ngephuzu lokuncibilika eliphezulu (2700°C) kanye ne-coefficient ephansi yokwandisa okushisayo (4.0 × 10⁻⁶/K), amapuleti e-ceramic e-SiC agcina ukunemba kobukhulu kanye nobuqotho besakhiwo ngaphansi kwemijikelezo yokushisisa nokupholisa okusheshayo. Lokhu kubenza balungele ukusetshenziswa eziko lokushisa eliphezulu, emagumbini e-vacuum, nasezindaweni ze-plasma.

Izakhiwo Zobuchwepheshe
Inkomba	Iyunithi	Inani
Igama Lempahla		Ukusabela Sintered Silicon Carbide	Pressureless Sintered Silicon Carbide	I-Recrystallized Silicon Carbide
Ukwakheka		I-RBSiC	I-SSiC	I-R-SiC
Ukuminyana kwenqwaba	g/cm3	3	3.15 ± 0.03	2.60-2.70
Amandla e-Flexural	I-MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Amandla Acindezelayo	I-MPa (kpsi)	1120(158)	3970(560)	> 600
Ukuqina	Knoop	2700	2800	/
Breaking Tenacity	I-MPa m1/2	4.5	4	/
I-Thermal Conductivity	W/mk	95	120	23
I-Coefficient of Thermal Expansion	10^-6.1/°C	5	4	4.7
Ukushisa Okuthize	I-Joule/g 0k	0.8	0.67	/
Izinga lokushisa eliphezulu emoyeni	℃	1200	1500	1600
I-Elastic Modulus	I-Gpa	360	410	240

Ipuleti le-SiC ceramic Q&A

Q: Yiziphi izakhiwo ze-silicon carbide plate?

A: Amapuleti e-Silicon carbide (SiC) aziwa ngamandla awo aphezulu, ubulukhuni, kanye nokuzinza kwe-thermal. Banikeza i-thermal conductivity enhle kakhulu kanye nokwanda okuphansi kwe-thermal, ukuqinisekisa ukusebenza okuthembekile ngaphansi kwamazinga okushisa aphezulu. I-SiC futhi ayisebenzi ngamakhemikhali, imelana nama-asidi, ama-alkali, nezindawo ze-plasma, okuyenza ilungele ukucutshungulwa kwe-semiconductor ne-LED. Indawo yayo eminyene, ebushelelezi inciphisa ukukhiqizwa kwezinhlayiya, igcine ukuhambisana kwegumbi elihlanzekile. Amapuleti e-SiC asetshenziswa kabanzi njengabathwali be-wafer, ama-susceptors, kanye nezingxenye zokusekela endaweni enezinga lokushisa eliphezulu kanye ne-corronary kuwo wonke ama-semiconductor, i-photovoltaic, kanye nezimboni ze-aerospace.