Isisetshenziswa Se-Sapphire Ingot Sokukhulisa I-Czochralski CZ Indlela Yokukhiqiza Ama-Sapphire Wafers angu-2inch-12inch

Incazelo emfushane:

I-Sapphire Ingot Growth Equipment (Indlela ye-Czochralski) iwuhlelo oluphambili oludizayinelwe ukukhula okuhlanzekile, okunesici esincane sesafire eyodwa yekristalu. Indlela ye-Czochralski (CZ) inika amandla ukulawula okunembayo kwesivinini sokudonsa ikristalu lembewu (0.5–5 mm/h), izinga lokuzungezisa (5–30 rpm), kanye nama-gradients okushisa ku-iridium crucible, ekhiqiza amakristalu a-axisymmetric afika kuma-intshi angu-12 (300 mm) ububanzi. Lesi sisetshenziswa sisekela i-C/A-plane crystal orientation control, evumela ukukhula kwe-optical-grade, electronic-grade, nesafire edotshiwe (isb., Cr³⁺ ruby, Ti³⁺ star sapphire).

I-XKH ihlinzeka ngezisombululo ezisuka ekupheleni, okuhlanganisa ukwenza ngendlela oyifisayo okokusebenza (ukukhiqizwa kwe-wafer yamayintshi angu-2–12), ukwenziwa ngcono kwenqubo (ukuminyana kwesici <100/cm²), nokuqeqeshwa kobuchwepheshe, okuphuma nyanga zonke kwama-wafers angu-5,000+ kuzinhlelo zokusebenza ezifana nama-LED substrates, i-GaN epitaxy, kanye nokupakishwa kwe-semiconductor.

Thumela i-imeyili kithi

Izici

Isimiso Sokusebenza

Indlela ye-CZ isebenza ngezinyathelo ezilandelayo:
1. Ukuncibilika Kwezinto Eziluhlaza: Ukuhlanzeka okuphezulu kwe-Al₂O₃ (ukuhlanzeka >99.999%) kuncibilika ku-iridium crucible ku-2050–2100°C.
2. Isingeniso se-Crystal Seed: Ikristalu yembewu yehliselwa ekuncibilikeni, kulandelwa ukudonsa ngokushesha ukuze kwakheke intamo (ububanzi obungu-<1 mm) ukuze kuqedwe ukugudluka.
3. Ukwakhiwa Kwamahlombe Nokukhula Kwenqwaba: Isivinini sokudonsa sincishiswa sibe ngu-0.2–1 mm/h, kancane kancane sandise ububanzi bekristalu bufinyelele kusayizi okuhlosiwe (isb, amayintshi angu-4–12).
4. I-Annealing and Cooling: I-crystal ipholiswe ku-0.1-0.5 ° C/min ukuze kuncishiswe ukuqhekeka okubangelwa ukucindezeleka okushisayo.
5. Izinhlobo Zekristalu Ezihambisanayo:
Ibanga le-Electronic: Ama-semiconductor substrates (TTV <5 μm)
Ibanga Lokubona: amawindi e-UV laser (ukudlulisa >90%@200 nm)
Izinhlobonhlobo ze-Doped: I-Ruby (i-Cr³⁺ concentration 0.01–0.5 wt.%), ishubhu yesafire eluhlaza okwesibhakabhaka

Izingxenye Zesistimu Eziyinhloko

1. Isistimu yokuncibilika
I-Iridium Crucible: Imelana no-2300 ° C, imelana nokugqwala, iyahambisana nokuncibilika okukhulu (100-400 kg).
I-Induction Heating Furnace: Ukulawulwa kwezinga lokushisa okuzimele kwezindawo eziningi (± 0.5°C), ama-gradients athuthukisiwe ashisayo.

2. Uhlelo Lokudonsa kanye Nokuzungezisa
I-High-Precision Servo Motor: Ukulungiswa kokudonsa ngu-0.01 mm/h, ukugxila okujikelezayo <0.01 mm.
I-Magnetic Fluid Seal: Ukudluliswa okungaxhunywanga kokukhula okuqhubekayo (>amahora angama-72).

3. Uhlelo Lokulawula Ukushisa
I-PID Closed-Loop Control: Ukulungiswa kwamandla esikhathi sangempela (50–200 kW) ukuze kuzinziswe inkambu eshisayo.
I-Inert Gas Protection: Ingxube ye-Ar/N₂ (ubumsulwa obungama-99.999%) ukuze kuvinjelwe i-oxidation.

4. Okuzenzakalelayo kanye nokuqapha
I-CCD Diameter Monitoring: Impendulo yesikhathi sangempela (ukunemba ±0.01 mm).
I-Infrared Thermography: Iqapha i-solid-liquid interface morphology.

CZ vs. KY Indlela Ukuqhathanisa

Ipharamitha	Indlela ye-CZ	Indlela ye-KY
Max. Usayizi we-Crystal	12 amayintshi (300 mm)	400 mm (ingot emise okwepheya)
I-Defect Density	<100/cm²	<50/cm²
Izinga Lokukhula	0.5–5 mm/h	0.1–2 mm/h
Ukusetshenziswa kwamandla	50–80 kWh/kg	80–120 kWh/kg
Izinhlelo zokusebenza	Ama-substrates e-LED, i-GaN epitaxy	Amawindi akhanyayo, ama-ingots amakhulu
Izindleko	Okumaphakathi (utshalomali lwemishini ephezulu)	Phezulu (inqubo eyinkimbinkimbi)

Izinhlelo zokusebenza ezibalulekile

1. Imboni ye-Semiconductor
I-GaN Epitaxial Substrates: 2–8-inch wafers (TTV <10 μm) yama-Micro-LED nama-laser diode.
Ama-Wafers e-SOI: Ubulukhuni bobuso <0.2 nm kuma-chips ahlanganiswe ne-3D.

2. I-Optoelectronics
I-UV Laser Windows: Imelana nokuminyana kwamandla okungu-200 W/cm² kuma-lithography optics.
Izingxenye ze-infrared: I-coefficient yokumuncwa <10⁻³ cm⁻¹ yomfanekiso oshisayo.

3. I-Consumer Electronics
Amakhava ekhamera ye-Smartphone: Ubulukhuni be-Mohs 9, 10× ukuthuthukiswa kokumelana nokuklwebheka.
Izibonisi ze-Smartwatch: Ubukhulu 0.3-0.5 mm, ukudlulisa > 92%.

4. I-Defence kanye ne-Aerospace
I-Nuclear Reactor Windows: Ukubekezelela imisebe kufika ku-10¹⁶ n/cm².
I-High-Power Laser Mirrors: Ukuguqulwa kwe-Thermal <λ/20@1064 nm.

Izinkonzo ze-XKH

1. Ukwenziwa Kwezisetshenziswa ngokwezifiso
I-Scalable Chamber Design: Φ200–400 mm ukucushwa kokukhiqizwa kwe-wafer engu-2–12-intshi.
I-Doping Flexibility: Isekela i-rare-earth (Er/Yb) kanye ne-transition-metal (Ti/Cr) doping yezakhiwo ze-optoelectronic eziklanyelwe.

2. Usekelo Lokusuka Ekupheleni
Ukuthuthukisa Inqubo: Izindlela zokupheka eziqinisekiswe ngaphambilini (50+) ze-LED, amadivayisi e-RF, nezinto eziqiniswe ngemisebe.
I-Global Service Network: Ukuxilongwa okukude okungu-24/7 nokugcinwa kwendawo enewaranti yezinyanga ezingama-24.

3. I-Downstream Processing
I-Wafer Fabrication: Ukusika, ukugaya, nokupholisha ama-wafers angu-2–12-intshi (C/A-plane).
Imikhiqizo Eyengezwe Ivalue:
Izingxenye Zokubona: Amawindi e-UV/IR (ubukhulu obungu-0.5–50 mm).
Izinto Zobucwebe-Grade: Cr³⁺ ruby (GIA-certified), Ti³⁺ star sapphire.

4. Ubuholi Bezobuchwepheshe
Izitifiketi: Ama-wafers athobela i-EMI.
Amalungelo obunikazi: Amalungelo obunikazi ayinhloko ekusungulweni kwendlela ye-CZ.

Isiphetho

Imishini yendlela ye-CZ iletha ukuhambisana kobukhulu obukhulu, amanani angalungile aphansi kakhulu, kanye nokuzinza kwenqubo ephezulu, okuyenza ibe uphawu lomkhakha we-LED, i-semiconductor, nezicelo zokuvikela. I-XKH inikeza ukwesekwa okuphelele kusukela ekusetshenzisweni kwemishini kuya ekucutshungulweni kwangemva kokukhula, okuvumela amaklayenti ukuthi afinyelele ukukhiqizwa kwekristalu yesafire engabizi kakhulu, esebenza kahle kakhulu.