Imikhiqizo
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I-Wafer ye-Sapphire engu-2 intshi engu-50.8mm C-Plane I-M-plane R-plane A-plane
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Ukunemba okuphezulu kwe-Dia50.8x1mmt Amafasitela e-Sapphire Ukumelana nokushisa okuphezulu kanye nokuqina okuphezulu
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Ukunemba okuphezulu kwe-Dia50.8x1mmt Amafasitela e-Sapphire Ukumelana nokushisa okuphezulu kanye nokuqina okuphezulu
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Izinduku zamashubhu e-EFG CZ KY e-Al2O3 99.999% i-sapphire eyodwa yekristalu
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Ishubhu yokunemba kwesafire I-single crysatl Al2O3 99.999% izinduku ze-crucible yesitsha sokushisa okuphezulu
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I-GaN-On-Sapphire engu-6 intshi
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2 amayintshi 50.8mm Ubukhulu 0.1mm 0.2mm 0.43mm I-Sapphire Wafer C-Plane I-M-plane R-plane A-plane
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I-150mm 200mm 6inch 8inch GaN on Silicon Epi-layer wafer I-Gallium nitride epitaxial wafer
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I-Subrate SSP DSP Carrier Wafer Carrier engu-8 intshi engu-200mm Ubukhulu be-Sapphire Wafer engu-0.5mm 0.75mm
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Ama-Wafer e-Silicon Carbide angu-2 intshi angu-6H noma angu-4H N noma ama-Substrate e-SiC angenawo umswakama
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I-Lithium niobate single crystal film LNOI wafer engu-4 intshi engu-6 intshi
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I-4H-N 4 intshi SiC substrate wafer Silicon Carbide Production Dummy Research grade