Imikhiqizo
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p-uhlobo 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Ziro MPD
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I-SiC substrate P-type 4H/6H-P 3C-N 4inch enogqinsi lwama-350um Ibanga Lokukhiqiza Ibanga leDummy
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga leDummy Grade
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Uhlobo lwe-P-SiC wafer 4H/6H-P 3C-N 6inch ukujiya okungu-350 μm nge-Primary Flat Orientation
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Ingalo ye-alumina ceramic ngokwezifiso Ingalo yerobhothi ye-Ceramic
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I-Sapphire tube KY Method yonke esobala Customizable
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I-Al2O3 99.999% i-sapphire custom blade imelana nokugqoka okusobala 38×4.5×0.3mmt
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Ukufakelwa kwezinwele ze-Sapphire blade kungenziwa ngokwezifiso ngezinjongo zezokwelapha
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I-Lilac YAG impahla eluhlaza impushana ensomi esitokweni
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Inqubo ye-TVG ku-quartz sapphire BF33 wafer Iwafa yengilazi ipunching
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I-Single Crystal Silicon Wafer Si Substrate Uhlobo lwe-N/P Ongakukhetha lwe-Silicon Carbide Wafer
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I-N-Type SiC Composite Substrates Dia6inch Ikhwalithi ephezulu ye-monocrystaline ne-substrate yekhwalithi ephansi