Imikhiqizo
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Indlela yokucubungula engaphezulu ye-titanium-doped sapphire crystal laser rods
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
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200mm 8inch GaN ku-sapphire Epi-layer wafer substrate
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I-Sapphire tube KY Method yonke esobala Customizable
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I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
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i-sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela yokwenza ngokwezifiso
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I-Sapphire hair transplant blade ubulukhuni obukhulu ukumelana nokugqwala ukwenza ngokwezifiso ithuluzi lezokwelapha kungasetshenziselwa ubuhle bezokwelapha
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I-Sapphire blade yokufakelwa izinwele 0.8mm 1.0mm 1.2mm Ukumelana nokugqoka okuqinile okuphezulu nokumelana nokugqwala
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I-Sapphire optical fibre Al2O3 ikhebula lekristalu elilodwa elibonisa ngale i-Optical fibre yokuxhumana ulayini we-25-500um
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Ishubhu yesafire esobala ephezulu 1inch 2inch 3inch ngokwezifiso ishubhu lengilazi ubude 10-800 mm 99.999% AL2O3 high ubumsulwa
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indandatho yesafire eyenziwe ngezinto zesafire zokwenziwa Ubulukhuni be-Mohs obusobala futhi obenzeka ngokwezifiso abangu-9
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Ukunemba kweshubhu leSapphire kukhiqiza ishubhu esobala i-Al2O3 ikristalu engavimbeli ubulukhuni obuphezulu be-EFG/KY ngokwezifiso zokupholisha ububanzi obuhlukahlukene