Imikhiqizo
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Indlela yokucubungula engaphezulu ye-titanium-doped sapphire crystal laser rods
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
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200mm 8inch GaN ku-sapphire Epi-layer wafer substrate
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I-Sapphire tube KY Method yonke esobala Customizable
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I-6 Inch Conductive SiC Composite Substrate 4H Ububanzi 150mm Ra≤0.2nm Warp≤35μm
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I-Infrared Nanosecond Laser Drilling imishini yokuqina kwe-Glass Drilling≤20mm
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Imishini ye-Microjet laser technology wafer yokusika i-SiC material processing
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Umshini wokusika we-Silicon carbide diamond wire 4/6/8/12 inch SiC ingot processing
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Indlela ye-CVD yokukhiqiza izinto zokusetshenziswa ezihlanzekile ze-SiC ku-silicon carbide synthesis synthesis ku-1600 ℃
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I-silicon carbide ukumelana nesithando somlilo sekristalu eside esikhula ngo-6/8/12inch intshi ye-SiC ingot crystal PVT indlela
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Umshini wesikwele wesiteshi esiphindwe kabili i-monocrystalline induku ye-silicon icubungula i-6/8/12 inch surface flatness Ra≤0.5μm