Imikhiqizo
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I-GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yokwelashwa nge-laser
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I-GaAs laser epitaxial wafer 4 intshi 6 intshi VCSEL umgodi oqondile we-laser wavelength 940nm ukuhlangana okukodwa
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I-InGaAs epitaxial wafer substrate PD Array photodetector arrays ingasetshenziselwa i-LiDAR
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2inch 3inch 4inch InP epitaxial wafer substrate APD umtshina wokukhanya wokuxhumana kwe-fiber optic noma i-LiDAR
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I-Sapphire hair transplant blade ubulukhuni obukhulu ukumelana nokugqwala ukwenza ngokwezifiso ithuluzi lezokwelapha kungasetshenziselwa ubuhle bezokwelapha
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I-Sapphire blade yokufakelwa izinwele 0.8mm 1.0mm 1.2mm Ukumelana nokugqoka okuqinile okuphezulu nokumelana nokugqwala
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I-Sapphire optical fiber i-Al2O3 ikhebula lekristalu elilodwa elibonisa ngale i-Optical fibre yokuxhumana ulayini we-25-500um
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Ishubhu yesafire esobala ephezulu 1inch 2inch 3inch ngokwezifiso ishubhu lengilazi ubude 10-800 mm 99.999% AL2O3 high ubumsulwa
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I-Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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I-Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Ikristalu Eyodwa
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indandatho yesafire indandatho yonke yesafire eyenziwe ngokuphelele ngesafire Transparent lab-made sapphire material
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I-SiC substrate 3inch 350um ukujiya HPSI uhlobo Prime Grade Dummy grade