I-Sapphire Substrate enephethini PSS 2inch 4inch 6inch ICP dry etching ingasetshenziswa kuma-LED chips
Isici esiyinhloko
1. Izici zezinto: Izinto ezingaphansi komhlaba ziyi-sapphire eyodwa yekristalu (Al₂O₃), enobulukhuni obuphezulu, ukumelana nokushisa okuphezulu kanye nokuqina kwamakhemikhali.
2. Isakhiwo somphezulu: Umphezulu wakhiwa yi-photolithography kanye nokuqoshwa kwezakhiwo ezincane ze-nano ezihlala isikhathi eside, njengezikhoni, amaphiramidi noma ama-array ayisithupha.
3. Ukusebenza kokukhanya: Ngomklamo wokwenza amaphethini ebusweni, ukubonakaliswa kokukhanya okuphelele esibonakalayo kuyancishiswa, futhi ukusebenza kahle kokukhipha ukukhanya kuyathuthukiswa.
4. Ukusebenza kokushisa: I-substrate ye-sapphire inokushisa okuhle kakhulu, ifanele ukusetshenziswa kwe-LED enamandla aphezulu.
5. Imininingwane yosayizi: Osayizi abavamile bangama-intshi angu-2 (50.8mm), ama-intshi angu-4 (100mm) kanye nama-intshi angu-6 (150mm).
Izindawo eziyinhloko zokusetshenziswa
1. Ukukhiqizwa kwe-LED:
Ukusebenza kahle kokukhipha ukukhanya okuthuthukisiwe: I-PSS inciphisa ukulahleka kokukhanya ngokuklama amaphethini, ithuthukisa kakhulu ukukhanya kwe-LED kanye nokusebenza kahle kokukhanya.
Ikhwalithi yokukhula kwe-epitaxial ethuthukisiwe: Isakhiwo esinamaphethini sinikeza isisekelo sokukhula esingcono sezingqimba ze-epitaxial ze-GaN futhi sithuthukisa ukusebenza kwe-LED.
2. I-Laser Diode (LD):
Ama-laser anamandla aphezulu: Ukushisa okuphezulu kanye nokuqina kwe-PSS kufaneleka kuma-laser diode anamandla aphezulu, okuthuthukisa ukusebenza kokushabalalisa ukushisa kanye nokuthembeka.
Umthamo wamandla ophansi: Lungiselela ukukhula kwe-epitaxial, wehlise umthamo wamandla ophansi we-laser diode, futhi uthuthukise ukusebenza kahle.
3. Isitholi sezithombe:
Ukuzwela okuphezulu: Ukudluliselwa kokukhanya okuphezulu kanye nobuningi obuphansi be-PSS kuthuthukisa ukuzwela kanye nesivinini sokuphendula kwe-photodetector.
Impendulo ye-spectral ebanzi: ifanele ukutholakala kwe-photoelectric ebangeni le-ultraviolet kuya kokubonakalayo.
4. Ama-elekthronikhi kagesi:
Ukumelana nogesi ophezulu: Ukushisa okuphezulu kwe-Sapphire kanye nokuqina kokushisa kufaneleka kumadivayisi kagesi aphezulu.
Ukushabalalisa ukushisa okusebenzayo: Ukushisa okuphezulu kuthuthukisa ukusebenza kokushabalalisa ukushisa kwamadivayisi kagesi futhi kwandisa isikhathi sokuphila kwesevisi.
5. Amadivayisi e-Rf:
Ukusebenza kwemvamisa ephezulu: Ukulahleka okuphansi kwe-dielectric kanye nokuzinza okuphezulu kokushisa kwe-PSS kufanelekile kumadivayisi e-RF avame kakhulu.
Umsindo ophansi: Ukuthamba okuphezulu kanye nobuningi obuphansi besici kunciphisa umsindo wedivayisi futhi kuthuthukise ikhwalithi yesignali.
6. Izinzwa ze-Bio:
Ukutholwa kokuzwela okuphezulu: Ukudluliselwa kokukhanya okuphezulu kanye nokuqina kwamakhemikhali kwe-PSS kufanelekile kuma-biosensor okuzwela okuphezulu.
Ukuhambisana kwezinto eziphilayo: Ukuhambisana kwezinto eziphilayo kwe-sapphire kwenza kube kufanelekile ukusetshenziswa kwezokwelapha kanye nokutholwa kwezinto eziphilayo.
I-substrate ye-sapphire enamaphethini (i-PSS) enezinto ze-GaN epitaxial:
I-substrate ye-sapphire enephethini (i-PSS) iyi-substrate efanelekile yokukhula kwe-epitaxial ye-GaN (gallium nitride). I-lattice constant ye-sapphire iseduze ne-GaN, enganciphisa ukungalingani kwe-lattice kanye namaphutha ekukhuleni kwe-epitaxial. Isakhiwo se-micro-nano sobuso be-PSS asigcini nje ngokuthuthukisa ukusebenza kahle kokukhipha ukukhanya, kodwa futhi sithuthukisa ikhwalithi yekristalu yesendlalelo se-epitaxial se-GaN, ngaleyo ndlela sithuthukise ukusebenza nokuthembeka kwe-LED.
Amapharamitha obuchwepheshe
| Into | I-Substrate ye-Sapphire Enephethini (2 ~ 6inch) | ||
| Ububanzi | 50.8 ± 0.1 mm | 100.0 ± 0.2 mm | 150.0 ± 0.3 mm |
| Ubukhulu | 430 ± 25μm | 650 ± 25μm | 1000 ± 25μm |
| Ukuqondiswa Komphezulu | Indiza engu-C (0001) ekhoneni elingaphandle kwe-M-axis (10-10) 0.2 ± 0.1° | ||
| Indiza engu-C (0001) engaphandle kwe-engela ebheke ku-A-axis (11-20) 0 ± 0.1° | |||
| Ukuqondiswa Okuyisisekelo Okuyisicaba | Indiza i-A (11-20) ± 1.0° | ||
| Ubude Obuphansi Obuyinhloko | 16.0 ± 1.0 mm | 30.0 ± 1.0 mm | 47.5 ± 2.0 mm |
| Indiza engu-R | 9:00 | ||
| Ukuqeda Okungaphambili | Kufakwe amaphethini | ||
| Ukuqeda Okungaphezulu Kwangemuva | I-SSP: Ecwebezelisiwe kahle, i-Ra=0.8-1.2um; i-DSP: Epi-polished, i-Ra<0.3nm | ||
| Uphawu lwe-Laser | Uhlangothi olungemuva | ||
| I-TTV | ≤8μm | ≤10μm | ≤20μm |
| UKUGOBHOZA | ≤10μm | ≤15μm | ≤25μm |
| I-WARP | ≤12μm | ≤20μm | ≤30μm |
| Ukukhishwa Komphetho | ≤2 mm | ||
| Ukucaciswa Kwephethini | Isakhiwo Somumo | I-Dome, Ikhoni, Iphiramidi | |
| Ukuphakama Kwephethini | 1.6~1.8μm | ||
| Ububanzi bephethini | 2.75~2.85μm | ||
| Isikhala Sephethini | 0.1 ~ 0.3μm | ||
I-XKH igxile ekuhlinzekeni nge-sapphire substrates (PSS) esezingeni eliphezulu, eyenziwe ngokwezifiso ngokusekelwa kobuchwepheshe kanye nensizakalo yangemva kokuthengisa ukusiza amakhasimende ukuthi afinyelele emisha ephumelelayo emkhakheni we-LED, ukubonisa kanye ne-optoelectronics.
1. Ukuhlinzekwa kwe-PSS esezingeni eliphezulu: Izisekelo ze-sapphire ezenziwe ngamaphethini ngobukhulu obuhlukahlukene (2 ", 4", 6 ") ukuze kuhlangatshezwane nezidingo ze-LED, izibonisi kanye namadivayisi e-optoelectronic.
2. Umklamo owenziwe ngokwezifiso: Yenza ngokwezifiso isakhiwo se-micro-nano esingaphezulu (njengekhoni, iphiramidi noma i-hexagonal array) ngokwezidingo zamakhasimende ukuze uthuthukise ukusebenza kahle kokukhipha ukukhanya.
3. Usekelo lobuchwepheshe: Nikeza ukwakheka kohlelo lokusebenza lwe-PSS, ukwenziwa ngcono kwenqubo kanye nokubonisana ngobuchwepheshe ukusiza amakhasimende ukuthuthukisa ukusebenza komkhiqizo.
4. Ukusekelwa kokukhula kwe-Epitaxial: I-PSS ehambisana nezinto ze-epitaxial ze-GaN inikezwa ukuqinisekisa ukukhula kwezinga le-epitaxial elisezingeni eliphezulu.
5. Ukuhlolwa kanye nesitifiketi: Nikeza umbiko wokuhlolwa kwekhwalithi ye-PSS ukuqinisekisa ukuthi imikhiqizo iyahlangabezana nezindinganiso zomkhakha.
Umdwebo Oningiliziwe
