I-Sapphire Substrate enephethini PSS 2inch 4inch 6inch ICP dry etching ingasetshenziselwa ama-LED chips
Isici esibalulekile
1. Izici zezinto ezibonakalayo: I-substrate impahla iyisafire ye-crystal eyodwa (Al₂O₃), enobunzima obuphezulu, ukumelana nokushisa okuphezulu nokuzinza kwamakhemikhali.
2. Isakhiwo esingaphezulu: Ingaphezulu lakhiwe nge-photolithography futhi linamathiselwe ezinhlakeni ze-micro-nano ngezikhathi ezithile, njengezigaxa, amaphiramidi noma ama-array angama-hexagonal.
3. Ukusebenza kwe-Optical: Ngedizayini yephethini yangaphezulu, ukuboniswa okuphelele kokukhanya kusixhumi esibonakalayo kuyehliswa, futhi ukusebenza kahle kokukhipha ukukhanya kuyathuthukiswa.
4. Ukusebenza kwe-thermal: I-Sapphire substrate ine-conductivity enhle kakhulu yokushisa, ifanele izicelo ze-LED zamandla aphezulu.
5. Ukucaciswa kosayizi: Osayizi abajwayelekile bangamayintshi angu-2 (50.8mm), amayintshi angu-4 (100mm) namayintshi angu-6 (150mm).
Izindawo zokufaka izicelo eziyinhloko
1. Ukukhiqizwa kwe-LED:
Ukusebenza kahle kokukhipha ukukhanya okuthuthukisiwe: I-PSS yehlisa ukulahleka kokukhanya ngokuklama iphethini, ithuthukisa kakhulu ukukhanya kwe-LED nokusebenza kahle okukhanyayo.
Ikhwalithi yokukhula ye-epitaxial ethuthukisiwe: Isakhiwo esinephethini sinikeza isisekelo sokukhula esingcono sezendlalelo ze-epitaxial ze-GaN futhi sithuthukisa ukusebenza kwe-LED.
2. I-Laser Diode (LD) :
Ama-laser amandla aphezulu: I-thermal conductivity ephezulu nokuzinza kwe-PSS kulungele ama-laser diode anamandla aphezulu, athuthukisa ukusebenza kokukhipha ukushisa nokuthembeka.
Umkhawulo ophansi wamanje: Lungiselela ukukhula kwe-epitaxial, wehlise i-threshold current we-laser diode, futhi uthuthukise ukusebenza kahle.
3. Isithwebuli sezithombe:
Ukuzwela okuphezulu: Ukudluliswa kokukhanya okuphezulu kanye nokuminyana kwesici esiphansi se-PSS kuthuthukisa ukuzwela kanye nesivinini sokuphendula se-photodetector.
Ukusabela okubanzi okubonwayo: kulungele ukutholwa kukagesi wezithombe ku-ultraviolet ebangeni elibonakalayo.
4. Izinto zikagesi:
Ukumelana ne-voltage ephezulu: Ukufakwa okuphezulu kwe-Sapphire nokuzinza kwe-thermal kufanelekile kumadivayisi anamandla kagesi aphezulu.
Ukukhipha ukushisa okusebenzayo: Ukusebenza okuphezulu kwe-thermal kuthuthukisa ukusebenza kokukhipha ukushisa kwamadivayisi wamandla futhi kwandisa impilo yesevisi.
5. Amadivayisi we-RF:
Ukusebenza kwefrikhwensi ephezulu: Ukulahleka kwe-dielectric okuphansi kanye nokuzinza okuphezulu kokushisa kwe-PSS kulungele amadivaysi e-RF avamile.
Umsindo ophansi: Ukucaba okuphezulu nokuminyana kokukhubazeka kunciphisa umsindo wedivayisi futhi kuthuthukise ikhwalithi yesignali.
6. Ama-Biosensor:
Ukutholwa kokuzwela okuphezulu: Ukudluliswa kokukhanya okuphezulu nokuzinza kwamakhemikhali kwe-PSS kufanelekile kuma-biosensors azwela kakhulu.
I-Biocompatibility: I-biocompatibility yesafire iyenza ifanelekele izinhlelo zokusebenza zezokwelapha ne-biodetection.
I-sapphire substrate enephethini (PSS) ene-GaN epitaxial material:
I-Sapphire substrate enephethini (PSS) iyindawo engaphansi efanelekile yokukhula kwe-epitaxial ye-GaN (gallium nitride). I-lattice constant yesafire iseduze ne-GaN, enganciphisa ukungafani kwe-lattice kanye nokukhubazeka ekukhuleni kwe-epitaxial. Isakhiwo se-micro-nano sendawo ye-PSS asigcini nje ngokuthuthukisa ukusebenza kahle kokukhipha ukukhanya, kodwa futhi sithuthukisa ikhwalithi yekristalu ye-GaN epitaxial layer, ngaleyo ndlela ithuthukise ukusebenza nokuthembeka kwe-LED.
Imingcele yezobuchwepheshe
| Into | I-Sapphire Substrate enephethini(2~6inch) | ||
| Ububanzi | 50.8 ± 0.1 mm | 100.0 ± 0.2 mm | 150.0 ± 0.3 mm |
| Ubukhulu | 430 ± 25μm | 650 ± 25μm | 1000 ± 25μm |
| I-Surface Orientation | Indiza ye-C (0001) i-off-engeli ibheke ku-M-eksisi (10-10) 0.2 ± 0.1° | ||
| Indiza ye-C (0001) i-off-engeli ibheke ku-A-eksisi (11-20) 0 ± 0.1° | |||
| Isisekelo se-Flat Orientation | I-A-Plane (11-20) ± 1.0° | ||
| Ubude Befulethi obuyisisekelo | 16.0 ± 1.0 mm | 30.0 ± 1.0 mm | 47.5 ± 2.0 mm |
| I-R-Plane | 9-o'clock | ||
| I-Front Surface Qeda | Iphethini | ||
| I-Back Surface Qeda | I-SSP:I-Fine-ground,Ra=0.8-1.2um; I-DSP: I-Epi-iphucuziwe, i-Ra<0.3nm | ||
| I-Laser Mark | Uhlangothi lwangemuva | ||
| I-TTV | ≤8μm | ≤10μm | ≤20μm |
| KHOTHAMA | ≤10μm | ≤15μm | ≤25μm |
| I-WARP | ≤12μm | ≤20μm | ≤30μm |
| Ukukhishwa komkhawulo | ≤2 mm | ||
| Ukucaciswa Kwephethini | Ukwakheka Komumo | I-Dome, Isigaxa, Iphiramidi | |
| Ukuphakama Kwephethini | 1.6~1.8μm | ||
| Iphethini Ububanzi | 2.75~2.85μm | ||
| Isikhala Sephethini | 0.1~0.3μm | ||
I-XKH igxile kakhulu ekuhlinzekeni ngama-sapphire substrates ekhwalithi ephezulu, enziwe ngendlela oyifisayo (PSS) ngosekelo lobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze isize amakhasimende azuze ukuqamba okusha okusebenzayo emkhakheni we-LED, isibonisi kanye ne-optoelectronics.
1. Ukunikezwa kwe-PSS yekhwalithi ephezulu: Ama-substrates esafire anephethini anosayizi abahlukahlukene (2 ", 4 ", 6 ") ukuze ahlangabezane nezidingo ze-LED, isibonisi namadivayisi we-optoelectronic.
2. Idizayini eyenziwe ngokwezifiso: Enza ngendlela oyifisayo ukwakheka kwe-surface micro-nano (njenge-cone, iphiramidi noma i-hexagonal array) ngokwezidingo zekhasimende ukuze uthuthukise ukusebenza kahle kokukhipha ukukhanya.
3. Usekelo lobuchwepheshe: Nikeza ngedizayini yohlelo lokusebenza lwe-PSS, ukuthuthukiswa kwenqubo kanye nokubonisana nobuchwepheshe ukuze usize amakhasimende athuthukise ukusebenza komkhiqizo.
4. Ukwesekwa kokukhula kwe-Epitaxial: I-PSS efaniswa ne-GaN epitaxial material inikezwa ukuze kuqinisekiswe ukukhula kongqimba lwe-epitaxial lwekhwalithi ephezulu.
5. Ukuhlola kanye nesitifiketi: Nikeza umbiko wokuhlolwa kwekhwalithi we-PSS ukuze uqinisekise ukuthi imikhiqizo ihlangabezana namazinga omkhakha.
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