I-Sapphere substrate subsstrate pss 2inch 4inch 6inch i-etching eyomile ingasetshenziselwa ama-chip we-LED

I-Sapphire Substrate Substrate PSS 2inch 4inch 6inch ICP Dry Etching ingasetshenziselwa ama-Chips aholwa

Incazelo emfushane:

I-Sapphere substrate yesafire (ama-PS) iyisigatshana sezinhlaka ezincane kanye ne-nano ezakhiwe ngamasu we-lithography nama-etching. Isetshenziswa ikakhulukazi ku-LED (ukukhanya okukhanyisayo kwe-diode) ukuthuthukisa ukusebenza kahle kokukhishwa kokukhanya kwe-suctarning design, ngaleyo ndlela kuthuthukise ukukhanya nokusebenza kwe-LED.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Isimilo esiyingqayizivele

1. Izici ezibonakalayo: I-substrate impahla iyi-sapphire eyodwa ye-crystal sapphire (Al₂o₃), ngobulukhuni obuphezulu, ukumelana nokushisa okuphezulu nokuqina kwamakhemikhali.

2. Isakhiwo esingaphezulu: ingaphezulu lenziwa nge-PhotoLthography bese ifaka kwizakhiwo ezincane ze-micro-nano, njengezigaxa, amaphiramidi noma ama-hexagonal arrays.

I-3. Ukusebenza kwe-Optical: Ngokusebenza kwe-Peradenning Design, ukuboniswa okuphelele kokukhanya esibonakalayo kuncishisiwe, futhi ukusebenza kahle kokukhishwa kwezinto kuthuthukisiwe.

I-4. Ukusebenza okushisayo: I-Sapphere SubsTrate inokuqhutshwa okuhle kakhulu okushisayo, okulungele izinhlelo zokusebenza eziholwa ngamandla aphezulu.

I-5. Ukucaciswa kobukhulu

Izindawo eziphambili zesicelo

1. I-LED ekhiqizayo:
Ukusebenza kahle kokukhanya okungcono kokukhanya: Ama-PSS anciphisa ukulahleka okukhanyayo ngomklamo we-patenning, ethuthukisa kakhulu ukugqama kwe-LED kanye nokusebenza okukhanyayo.

Ikhwalithi ye-Epitaxial Forport Quality: Isakhiwo esisephethini esilungisiwe sinikezela ngesisekelo sokukhula kangcono sezendlalelo ze-GAN Epitaxial futhi sithuthukisa ukusebenza kwe-LED.

2. I-Laser Diode (LD):
Ama-Lasers Amandla Aphezulu: Ukuvuselelwa okuphezulu okushisayo nokuqina kwama-PS kufanelekile kumandla we-Laser Diade aphezulu, ethuthukisa ukusebenza nokuthembeka kokushisa.

I-Threshold ephansi yamanje: Lungiselela ukukhula kwe-Epitaxial, ukunciphisa umkhawulo wamanje we-laser diode, futhi uthuthukise ukusebenza kahle.

3. I-PhotoDetor:
Ukuzwela okuphezulu: Ukuhanjiswa okuphezulu nokulimala okuphansi kwama-PSS Thuthukisa ukuzwela nokuphendula ijubane le-PhotoDETet.

Ukuphendula okubanzi okubanzi: Kulungele ukutholwa kwe-Photoelectric ku-ultraviolet kuya kububanzi obubonakalayo.

4. Amandla Electronics:
Ukumelana ne-voltage ephezulu: Ukufakwa okuphezulu kweSapphire kanye nokuqina okushisayo kulungele amadivayisi wamandla aphezulu e-voltage amandla.

Ukudicilela phansi okusebenzayo kokushisa

Amadivayisi we-5:
Ukusebenza okuvame kakhulu: Ukulahleka okuphansi kwe-dielectric kanye nokuqina okuphezulu kwe-PSS kulungele amadivaysi ajwayelekile we-RF.

Umsindo ophansi: Ifulethi eliphakeme kanye nobunzima obuphansi bokunciphisa umsindo ukunciphisa umsindo wedivayisi futhi uthuthukise ikhwalithi yesiginali.

6. Ama-Bioses:
Ukutholwa kokuzwa okuphezulu: Ukuhanjiswa okuphezulu nokuqina kwamakhemikhali ama-PS kufanelekile kuma-bititivitive biosesers.

I-BioCOMTI IMBilifo: I-BIOCOMTILYISO SApfire yenza ukuthi ilungele izinhlelo zokusebenza zezokwelapha nezobuhle.
I-Sapphire substrate (PSS) nge-GAN Epitaxial Material:

I-Sapphire substrate (PSS) i-substrate ekahle ye-GAN (Gallium Nitride) ukukhula kwe-Epitaxial. I-lattice engahlali iSapphire isondele eGan, okunganciphisa ama-lattice mismatches kanye nokulimazeka ekukhuleni kwe-epitaxial. Ukwakheka kwe-micro-nano yendawo ye-PSS akugcini nje ngokuthuthukisa ukusebenza kahle kokukhishwa kokukhanya, kepha futhi kuthuthukisa ikhwalithi yekristalu ye-gan epitaxial ungqimba, ngaleyo ndlela yenza ngcono ukusebenza nokwethembeka kwe-LED.

Amapharamitha Ezobuchwepheshe

Into yendaba	I-Sapphere substrate yesafire (2 ~ 6inch)
Ibanga elinquma phakathi ububanzi besingelezi	50.8 ± 0.1 mm	100.0 ± 0.2 mm	150.0 ± 0.3 mm
Ukujiya	430 ± 25μ	I-650 ± 25μ	I-1000 ± 25μM
Ukuqondiswa komhlaba	I-C-Plane (0001) Off-angle ibheke kwi-M-axis (10-10) 0.2 ± 0.1 °
	I-C-Plane (0001) Off-angle ibheke ku-axis (11-20) 0 ± 0.1 °
Ukuqondiswa okuyisisekelo	I-A-Plane (11-20) ± 1.0 °
Ubude obukhulu obucaba	16.0 ± 1.0 mm	30.0 ± 1.0 mm	47.5 ± 2.0 mm
R-Plane	I-9-o
Ukuqedwa komhlaba ngaphambili	-Minyeziwe
Ukuqedwa komhlaba	I-SSP: I-Fine-Ground, RA = 0.8-1.2UM; I-DSP: I-Epi-Powed, RA <0.3NM
I-Laser Mark	Uhlangothi lwasemuva
I-TTV	≤8μM	≤10μm	≤20μM
Ukuthoba	≤10μm	≤15μm	≤25μm
Ukulwa ngamandla	≤12μm	≤20μM	≤30μM
Ukukhishwa okunqenqemeni	≤2 mm
Ukucaciswa Kwephethini	Isakhiwo sokwakheka	Dome, Isigaxa, iphiramidi
	Ukuphakama kwephethini	1.6 ~ 1.8μm
	Ububanzi bephethini	2.75 ~ 2.85μm
	Isikhala sephethini	0.1 ~ 0.3μm

I-XKH isebenza ngokuhlinzeka ngezindawo ezisezingeni eliphakeme, ezenziwe ngezifiso ze-sapthire substrates (ama-PS) ngokuxhaswa kwezobuchwepheshe kanye nensizakalo yokuthengisa ngemuva kokusiza amakhasimende ukuthi afeze izinto ezintsha emkhakheni we-LED, ukubonisa kanye ne-optoelectronics.

1. Ukunikezwa kwekhwalithi ephezulu ye-PSS: I-Sapthire substrates kumasayizi ahlukahlukene (2 ", 4", 6 ") ukufeza izidingo zama-LED, abonisa kanye namadivayisi we-optoelectronic.

2. Idizayini eyenziwe ngokwezifiso: Yenza ngokwezifiso ukwakheka kwe-micro-nano (njenge-cone, i-Pyramid noma i-hexagonal uhlu) ngokwekhasimende kudinga ukwengeza ukusebenza kahle kokukhishwa okukhanyayo.

4. Ukusekelwa kokukhula kwe-EpiTaxial: Ama-PSS afaniswe nezinto ezibonakalayo ze-gan epitaxial anikezwa ukuqinisekisa ukukhula kwesendlalelo se-Epitaxial esezingeni eliphakeme.

I-5. Ukuhlola kanye nesitifiketi: Nikeza umbiko wekhwalithi yekhwalithi ye-PSS ukuqinisekisa ukuthi imikhiqizo ihlangabezana namazinga ezimboni.