Uhlobo lwe-P-SiC wafer 4H/6H-P 3C-N 6inch ukujiya okungu-350 μm nge-Primary Flat Orientation

Incazelo emfushane:

Iwafa ye-SiC yohlobo lwe-P, i-4H/6H-P 3C-N, iyimpahla yesemiconductor engu-6-intshi enogqinsi lwama-350 μm kanye nokuma okuyisisekelo okuyisicaba, okuklanyelwe izinhlelo zokusebenza ezithuthukisiwe ze-elekthronikhi. Yaziwa ngokuguquguquka kwayo okushisayo okushisayo, i-voltage ephezulu yokuwohloka, kanye nokumelana nezinga lokushisa elidlulele kanye nezindawo ezibolayo, lesi silucwecwana silungele izinto zikagesi ezisebenza kahle kakhulu. I-doping yohlobo lwe-P yethula izimbobo njengezinkampani zokushaja eziyinhloko, iyenze ifaneleke kugesi wamandla kanye nezinhlelo ze-RF. Isakhiwo sayo esiqinile siqinisekisa ukusebenza okuzinzile ngaphansi kwezimo ze-voltage ephezulu kanye ne-high-frequency, okuyenza ifaneleke kahle kumadivayisi anamandla, ama-electronics asezingeni eliphezulu, kanye nokuguqulwa kwamandla okusebenza kahle kakhulu. Ukuma okuyisisekelo okuyisicaba kuqinisekisa ukuqondana okunembile enqubweni yokukhiqiza, kuhlinzeka ngokungaguquguquki ekwakhiweni kwedivayisi.

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Ukucaciswa4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lepharamitha evamile

6 intshi ububanzi Silicon Carbide (SiC) Substrate Ukucaciswa

Ibanga			Zero MPD ProductionIbanga (Z Ibanga)	Ukukhiqizwa OkujwayelekileIbanga (P Ibanga)	Dummy Grade (D Ibanga)
Ububanzi			145.5 mm~150.0 mm
Ubukhulu			350 μm ± 25 μm
I-Wafer Orientation			-Offi-eksisi: 2.0°-4.0° ukuya [1120] ± 0.5° ku-4H/6H-P, Ku-eksisi:〈111〉± 0.5° ku-3C-N
I-Micropipe Density			0 cm-2
Ukungazweli	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Isisekelo se-Flat Orientation		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Ubude Befulethi obuyisisekelo			32.5 mm ± 2.0 mm
Ubude Befulethi besibili			18.0 mm ± 2.0 mm
I-Flat Orientation yesibili			I-silicon ibheke phezulu: 90° CW. kusuka kuPrime flat ± 5.0°
Ukukhishwa komkhawulo			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni			I-Polish Ra≤1 nm
			I-CMP Ra≤0.2 nm		I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light			Lutho		Ubude obuqongelelwayo ≤ 10 mm, ubude obubodwa≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu			Lutho		Indawo eqoqiwe≤3%
I-Visual Carbon Inclusions			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light			Lutho		Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Aphakeme Ngokukhanya Okunamandla			Akukho okuvunyelwe ≥0.2mm ububanzi nokujula		5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity			Lutho
Ukupakisha			I-Multi-wafer Cassette noma Isiqukathi Esiyisicwecwana Esisodwa

Amanothi:

※ Imikhawulo yokukhubazeka isebenza kuyo yonke indawo eyisicwecwana ngaphandle kwendawo engabaliwe enqenqemeni. # Imihuzuko kufanele ibhekwe ku-Si face o

Iwafa ye-SiC yohlobo lwe-P, i-4H/6H-P 3C-N, enosayizi wayo ongu-6-intshi nogqinsi lwama-350 μm, idlala indima ebalulekile ekukhiqizweni kwezimboni zama-electronics asebenza kahle kakhulu. I-thermal conductivity yayo enhle kakhulu kanye ne-voltage ephezulu yokuwohloka kuyenza ilungele izingxenye zokukhiqiza ezifana nokushintshwa kwamandla, ama-diode, nama-transistors asetshenziswa ezindaweni ezinezinga lokushisa eliphezulu njengezimoto zikagesi, amagridi kagesi, nezinhlelo zamandla avuselelekayo. Amandla e-wafer okusebenza kahle ezimeni ezinzima aqinisekisa ukusebenza okuthembekile ezinhlelweni zezimboni ezidinga ukuminyana okukhulu kwamandla nokusebenza kahle kwamandla. Ukwengeza, umumo wayo oyisicaba oyinhloko usiza ekuqondaneni okunembile ngesikhathi sokwenziwa kwedivayisi, kuthuthukise ukusebenza kahle kokukhiqiza nokuvumelana komkhiqizo.

Izinzuzo ze-N-type SiC composite substrates zihlanganisa

High Thermal Conductivity: Amawafa e-SiC ohlobo lwe-P ahlakaza kahle ukushisa, awenze alungele ukusetshenziswa kwezinga lokushisa eliphezulu.
High Breakdown Voltage: Iyakwazi ukumelana nama-voltage aphezulu, iqinisekisa ukwethembeka kugesi wamandla kanye namadivayisi ane-voltage ephezulu.
Ukumelana Nendawo Enzima: Ukuqina okuhle kakhulu ezimeni ezimbi kakhulu, njengamazinga okushisa aphezulu kanye nezindawo ezigqwalile.
Ukuguqulwa kwamandla okusebenzayo: I-doping yohlobo lwe-P isiza ukuphatha amandla ngendlela efanele, okwenza iwafa ilungele izinhlelo zokuguqula amandla.
Isisekelo se-Flat Orientation: Iqinisekisa ukuqondanisa okunembayo ngesikhathi sokukhiqiza, ithuthukisa ukunemba kwedivayisi nokuvumelana.
Isakhiwo Esincane (350 μm): Ugqinsi olufanele lwe-wafer lusekela ukuhlanganiswa kumadivayisi e-elekthronikhi athuthukile, avaleleke emkhathini.

Sekukonke, iwafa ye-SiC yohlobo lwe-P, 4H/6H-P 3C-N, inikezela ngezinzuzo eziningi eziyenza ifaneleke kakhulu izinhlelo zokusebenza zezimboni nezobuchwepheshe. I-conductivity yayo ephezulu yokushisa kanye ne-voltage yokuwohloka yenza ukusebenza okuthembekile endaweni yokushisa ephezulu kanye ne-high-voltage, kuyilapho ukumelana nezimo ezinzima kuqinisekisa ukuqina. I-doping yohlobo lwe-P ivumela ukuguqulwa kwamandla okusebenzayo, okuyenza ilungele ama-electronics amandla kanye nezinhlelo zamandla. Ukwengeza, ukuma okuyisicaba okuyinhloko kwe-wafer kuqinisekisa ukuqondana okunembayo phakathi nenqubo yokukhiqiza, kuthuthukisa ukungaguquguquki kokukhiqiza. Ngobukhulu obungu-350 μm, ifaneleka kahle ukuhlanganiswa kumadivayisi athuthukile, ahlangene.