I-Silicon carbide (SiC), njengohlobo lwempahla ye-semiconductor ye-wide band gap, idlala indima ebaluleke kakhulu ekusetshenzisweni kwesayensi nobuchwepheshe besimanje.I-Silicon carbide inokuqina okuhle kakhulu kokushisa, ukubekezelelana kwensimu kagesi ephezulu, ukuqhutshwa kwamabomu kanye nezinye izakhiwo ezinhle kakhulu zomzimba nezokubona, futhi isetshenziswa kabanzi kumadivayisi we-optoelectronic kanye namadivayisi elanga.Ngenxa yesidingo esikhulayo semishini kagesi esebenza kahle futhi ezinzile, ukwazi ubuchwepheshe bokukhula kwe-silicon carbide sekuphenduke indawo eshisayo.
Ngakho-ke kungakanani okwaziyo ngenqubo yokukhula ye-SiC?
Namuhla sizoxoxa ngamasu amathathu ayinhloko okukhula kwekristalu elilodwa le-silicon carbide: ukuthuthwa komhwamuko obonakalayo (PVT), i-liquid phase epitaxy (LPE), kanye nokushisa okuphezulu kwe-chemical vapor deposition (HT-CVD).
I-Physical Vapor Transfer Method (PVT)
Indlela yokudlulisa umhwamuko ongokoqobo ingenye yezinqubo ezivame ukusetshenziswa kakhulu zokukhula kwe-silicon carbide.Ukukhula kwe-single crystal silicon carbide kuncike kakhulu ekuncipheni kwe-sic powder kanye nokuphinda kubekwe kukristalu lwembewu ngaphansi kwezimo zokushisa eziphezulu.Ku-crucible ye-graphite evaliwe, i-silicon carbide powder ishisiswe ekushiseni okuphezulu, ngokulawulwa kwe-gradient yokushisa, isitimu se-silicon carbide sijiya phezu kwekristalu yembewu, futhi kancane kancane ikhula usayizi omkhulu wekristalu eyodwa.
Iningi le-monocrystalline SiC esihlinzeka ngayo njengamanje lenziwa ngale ndlela yokukhula.Futhi kuyindlela evamile embonini.
I-Liquid phase epitaxy (LPE)
Amakristalu e-silicon carbide alungiswa nge-epitaxy yesigaba soketshezi ngenqubo yokukhula kwekristalu kusixhumi esibonakalayo esiqinile.Ngale ndlela, i-silicon carbide powder incibilika kusisombululo se-silicon-carbon ekushiseni okuphezulu, bese izinga lokushisa liyehliswa ukuze i-silicon carbide idonswe kusuka kusixazululo futhi ikhule kumakristalu embewu.Inzuzo eyinhloko yendlela ye-LPE yikhono lokuthola amakristalu ekhwalithi ephezulu ekushiseni okuphansi kokukhula, izindleko ziphansi, futhi ifanele ukukhiqizwa okukhulu.
Ukushisa okuphezulu kwe-Chemical Vapor Deposition (HT-CVD)
Ngokwethula igesi equkethe i-silicon nekhabhoni egumbini lokusabela ekushiseni okuphezulu, ungqimba olulodwa lwekristalu lwe-silicon carbide lufakwa ngqo ebusweni bekristalu yembewu ngokusabela kwamakhemikhali.Inzuzo yale ndlela ukuthi izinga lokugeleza kanye nezimo zokusabela zegesi zingalawulwa ngokunembile, ukuze kutholwe i-silicon carbide crystal enobumsulwa obuphezulu kanye namaphutha ambalwa.Inqubo ye-HT-CVD ingakhiqiza amakristalu e-silicon carbide anezakhiwo ezinhle kakhulu, ezibaluleke kakhulu ekusebenzeni lapho kudingeka khona izinto ezisezingeni eliphakeme kakhulu.
Inqubo yokukhula ye-silicon carbide iyisisekelo sokusetshenziswa kwayo nokuthuthuka.Ngokuqhubeka nokusungula izinto ezintsha kanye nokwenza kahle, lezi zindlela ezintathu zokukhula zidlala indima yazo ukuze kuhlangatshezwane nezidingo zezikhathi ezahlukene, kuqinisekiswe isikhundla esibalulekile se-silicon carbide.Ngokujula kocwaningo kanye nenqubekelaphambili yezobuchwepheshe, inqubo yokukhula yezinto ze-silicon carbide izoqhubeka nokuthuthukiswa, nokusebenza kwemishini kagesi kuzothuthukiswa nakakhulu.
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Isikhathi sokuthumela: Jun-23-2024