I-Silicon carbide (SiC), njengohlobo lwezinto ze-semiconductor ze-wide band gap, idlala indima ebaluleke kakhulu ekusetshenzisweni kwesayensi nobuchwepheshe besimanje. I-Silicon carbide inokuzinza okuhle kakhulu kokushisa, ukubekezelelana okuphezulu kwensimu kagesi, ukuqhuba ngamabomu kanye nezinye izakhiwo ezinhle kakhulu zomzimba nezokukhanya, futhi isetshenziswa kabanzi kumadivayisi e-optoelectronic kanye namadivayisi elanga. Ngenxa yesidingo esikhulayo samadivayisi kagesi asebenza kahle futhi azinzile, ukuqonda ubuchwepheshe bokukhula kwe-silicon carbide sekuyindawo eshisayo.
Ngakho-ke kungakanani okwaziyo ngenqubo yokukhula kwe-SiC?
Namuhla sizoxoxa ngamasu amathathu ayinhloko okukhula kwamakristalu e-silicon carbide single: ukuthuthwa komhwamuko ngokomzimba (i-PVT), i-liquid phase epitaxy (i-LPE), kanye ne-high temperature chemical vapor deposition (i-HT-CVD).
Indlela Yokudlulisa Umusi Womzimba (i-PVT)
Indlela yokudlulisa umusi ongokoqobo ingenye yezinqubo zokukhula kwe-silicon carbide ezisetshenziswa kakhulu. Ukukhula kwe-silicon carbide yekristalu elilodwa kuncike kakhulu ekufakweni kwe-sic powder kanye nokufakwa kabusha kwekristalu yembewu ngaphansi kwezimo zokushisa okuphezulu. Esitsheni esivaliwe se-graphite, i-silicon carbide powder ishiswa kuze kufike ekushiseni okuphezulu, ngokulawula i-gradient yokushisa, umusi we-silicon carbide uyaqina ebusweni bekristalu yembewu, futhi kancane kancane ikhula ikristalu elilodwa elikhulu ngobukhulu.
Iningi elikhulu le-monocrystalline SiC esilinikezayo njengamanje lenziwe ngale ndlela yokukhula. Futhi kuyindlela eyinhloko embonini.
I-Liquid phase epitaxy (LPE)
Amakristalu e-silicon carbide alungiswa yi-epitaxy yesigaba soketshezi ngenqubo yokukhula kwekristalu endaweni ehlanganisiwe ye-solid-liquid. Kule ndlela, i-silicon carbide powder iyancibilika kwisisombululo se-silicon-carbon ekushiseni okuphezulu, bese izinga lokushisa lehliswa ukuze i-silicon carbide ikhishwe esixazululweni futhi ikhule kumakristalu embewu. Inzuzo enkulu yendlela ye-LPE yikhono lokuthola amakristalu ekhwalithi ephezulu ekushiseni okuphansi kokukhula, izindleko ziphansi kakhulu, futhi zifanele ukukhiqizwa okukhulu.
Ukushisa okuphezulu kokushisa kwe-Chemical Vapor Deposition (HT-CVD)
Ngokufaka igesi equkethe i-silicon ne-carbon ekamelweni lokusabela ekushiseni okuphezulu, ungqimba olulodwa lwekristalu lwe-silicon carbide lufakwa ngqo ebusweni bekristalu yembewu ngokusebenzisa ukusabela kwamakhemikhali. Inzuzo yale ndlela ukuthi izinga lokugeleza kanye nezimo zokusabela kwegesi zingalawulwa ngokunembile, ukuze kutholakale ikristalu ye-silicon carbide ehlanzekile kakhulu kanye namaphutha ambalwa. Inqubo ye-HT-CVD ingakhiqiza amakristalu e-silicon carbide anezakhiwo ezinhle kakhulu, okubaluleke kakhulu ekusetshenzisweni lapho kudingeka khona izinto ezisezingeni eliphezulu kakhulu.
Inqubo yokukhula kwe-silicon carbide iyinsika yokusetshenziswa kwayo kanye nentuthuko yayo. Ngokusungula izinto ezintsha kanye nokwenza ngcono ubuchwepheshe okuqhubekayo, lezi zindlela ezintathu zokukhula zidlala indima yazo ukuhlangabezana nezidingo zezikhathi ezahlukene, ziqinisekisa isikhundla esibalulekile se-silicon carbide. Ngokujula kocwaningo kanye nentuthuko yezobuchwepheshe, inqubo yokukhula kwezinto ze-silicon carbide izoqhubeka nokuthuthukiswa, futhi ukusebenza kwamadivayisi kagesi kuzothuthukiswa kakhulu.
(ukugxeka)
Isikhathi sokuthunyelwe: Juni-23-2024