I-LiNbO₃ Wafers 2inch-8inch Ukuqina 0.1 ~ 0.5mm TTV 3µm Ngokwezifiso
Imingcele yezobuchwepheshe
Okubalulekile | Ibanga le-Optical LiNbO3 wafes | |
I-Curie Temp | 1142±2.0℃ | |
I-Angle yokusika | X/Y/Z njll | |
Ububanzi/usayizi | 2"/3"/4"/6"/8" | |
I-Tol(±) | <0.20 mm | |
Ubukhulu | 0.1 ~ 0.5mm noma ngaphezulu | |
Ifulethi eliyisisekelo | 16mm/22mm/32mm | |
I-TTV | <3µm | |
Khothama | -30 | |
I-Wap | <40µm | |
I-Orientation Flat | Konke kuyatholakala | |
Uhlobo Lobuso | Uhlangothi Olulodwa Lupholishiwe / Izinhlangothi Ezikabili Ziphucuziwe | |
Uhlangothi olupholishiwe u-Ra | <0.5nm | |
S/D | 20/10 | |
Imibandela Yokunquma | R=0.2mm noma i-Bullnose | |
I-Optical doped | I-Fe/Zn/MgO njll yamawafa ebanga le-LN< | |
I-Wafer Surface Criteria | Inkomba ye-refractive | No=2.2878/Ne=2.2033 @632nm wavelength |
Ukungcola, | Lutho | |
Izinhlayiya ¢>0.3 µ m | <= 30 | |
Scratch, Chipping | Lutho | |
Isici | Ayikho imifantu enqenqemeni, imihuzuko, amasaha, amabala | |
Ukupakisha | Ibhokisi elingu-Qty/Wafer | 25pcs ibhokisi ngalinye |
Izimfanelo Eziyinhloko zama-Wafers Wethu we-LiNbO₃
1.Izici Zokusebenza Kwezithombe
Ama-Wafers ethu e-LiNbO₃ abonisa amandla angavamile okuxhumana nokukhanya, anama-coefficients angaqondile afinyelela ku-42 pm/V - avumela izinqubo zokuguqula ubude begagasi obubalulekile ku-quantum photonics. Ama-substrates agcina ukudluliswa okungu->72% ku-320-5200nm, ngezinguqulo eziklanywe ngokukhethekile ezifinyelela ukulahleka kokusakazwa okungu-<0.2dB/cm kumaza wamaza ocingo.
2.Acoustic Wave Engineering
Isakhiwo esicwebezelayo se-LiNbO₃ Wafers yethu sisekela isivinini samagagasi angaphezulu angaphezu kuka-3800 m/s, sivumela ukusebenza kweresonator kufika ku-12GHz. Amasu ethu okuphathelene nokupholisha akhiqiza amadivayisi we-surface acoustic wave (SAW) anokulahlekelwa kokufaka ngaphansi kuka-1.2dB, kuyilapho egcina ukuqina kwezinga lokushisa ngaphakathi kuka-±15ppm/°C.
3.Ukusimama Kwemvelo
Eklanyelwe ukumelana nezimo ezimbi kakhulu, ama-Wafers ethu e-LiNbO₃ agcina ukusebenza kusuka emazingeni okushisa e-cryogenic kuya ku-500°C ezindaweni zokusebenza. Izinto ezibonakalayo zibonisa ubulukhuni bemisebe obukhethekile, ukumelana >1Mrad isamba sethamo le-ionizing ngaphandle kokuwohloka okuphawulekayo kokusebenza.
4.Ukucushwa Okuqondile Kwesicelo
Sinikeza okuhlukile okwenziwe yisizinda okuhlanganisa:
Izakhiwo ezigxotshiwe ngezikhathi ezithile ezinezikhathi zesizinda esingu-5-50μm
Amafilimu azacile anezicucu ze-ion okuhlanganiswa kwe-hybrid
Izinguqulo ezithuthukisiwe ze-Metamaterial zezinhlelo zokusebenza ezikhethekile
Izimo Zokusebenzisa ze-LiNbO₃ Wafers
1.Next-Gen Optical Networks
I-LiNbO₃ Wafers isebenza njengomgogodla wama-terabit-scale optical transceivers, evumela ukudluliselwa okuhambisanayo kwe-800Gbps ngamadizayini athuthukisiwe emoduli. Ama-substrates ethu aya ngokuya emukelwa ekusetshenzisweni okuhlanganisiwe kwe-optics kumasistimu wokusheshisa we-AI/ML.
2.6G RF Frontends
Isizukulwane sakamuva se-LiNbO₃ Wafers sisekela ukuhlunga kwe-ultra-wideband kufika ku-20GHz, ukubhekana nezidingo ze-spectrum zamazinga avelayo e-6G. Izinto zethu zokwenziwa zinika amandla ukwakheka kwenoveli ye-acoustic resonator enezici ze-Q ezedlula i-2000.
3.I-Quantum Information Systems
Ama-Wafers we-LiNbO₃ ane-precision-poled akha isisekelo semithombo yesithombe ebhajwe nge >90% esebenza kahle yokuphequlula. Ama-substrates ethu anika amandla impumelelo ku-photonic quantum computing kanye namanethiwekhi okuxhumana avikelekile.
4.Izixazululo Zokuzwa Ezithuthukile
Kusukela ku-LiDAR yezimoto esebenza ku-1550nm kuya kuzinzwa ze-gravimetric ezizwela kakhulu, ama-Wafers we-LiNbO₃ ahlinzeka ngenkundla yokudlulisa ebalulekile. Izinto zethu ezisetshenziswayo zinika amandla izinqumo zenzwa kuze kufike kumazinga okuthola i-molecule eyodwa.
Izinzuzo ezibalulekile ze-LiNbO₃Wafers
1. Ukusebenza Okungenakuqhathaniswa kwe-Electro-Optic
I-Electro-Optic Coefficient Ephakeme Ngokukhethekile (r₃₃~30-32 pm/V): Imele ibhentshimakhi yomkhakha yama-wafers e-lithium niobate, evumela ama-modulators angu-200Gbps+ anesivinini esiphezulu adlula kude imikhawulo yokusebenza yezixazululo ezisekelwe ku-silicon noma ze-polymer.
Ukulahlekelwa Kokufaka Okuphansi Okuphezulu (<0.1 dB/cm): Kufinyelelwe ngokupholisha i-nanoscale (Ra<0.3 nm) nezingubo zokulwa ne-reflection (AR), okuthuthukisa kakhulu ukusebenza kahle kwamandla kwamamojula okuxhumana okubonakalayo.
2. I-Superior Piezoelectric & Acoustic Properties
Ilungele amadivayisi e-High-Frequency SAW/BAW: Ngama-acoustic velocities angu-3500-3800 m/s, lawa mawafa asekela imiklamo yesihlungi engu-6G mmWave (24-100 GHz) equkethe ukulahlekelwa kokufaka <1.0 dB.
I-High Electromechanical Coupling Coefficient (K²~0.25%): Ithuthukisa umkhawulokudonsa nokukhethwa kwesignali ezingxenyeni ezingaphambili ze-RF, izenze zifanelekele iziteshi eziyisisekelo ze-5G/6G nokuxhumana ngesathelayithi.
3. Ukungafihli kwe-Broadband & Nonlinear Optical Effects
Iwindi le-Ultra-Wide Optical Transmission (350-5000 nm): Imboza i-UV kuya ku-spectra emaphakathi ne-IR, ivumela izinhlelo zokusebenza ezifana nalezi:
I-Quantum Optics: Ukulungiselelwa kokupholishwa ngezikhathi ezithile (PPLN) kufinyelela > ukusebenza kahle okungamaphesenti angama-90 ekukhiqizeni ipheya ye-photon eboshwe.
Amasistimu we-Laser: I-Optical parametric oscillation (OPO) iletha okuphumayo kwe-wavelength eshintshwayo (1-10 μm).
I-Exceptional Laser Damage Threshold (>1 GW/cm²): Ihlangabezana nezimfuneko eziqinile zezinhlelo zokusebenza ze-laser zamandla aphezulu.
4. Ukuzinza Okudlulele Kwemvelo
Ukumelana Nezinga Lokushisa Eliphezulu (Iphoyinti leCurie: 1140°C): Igcina ukusebenza okuzinzile ku- -200°C kuya ku-+500°C, ilungele:
I-Automotive Electronics (izinzwa zekhompathi yenjini)
I-Spacecraft (izingxenye ze-deep-space Optical)
Ukuqina Kwemisebe (>1 Mrad TID): Ihambisana nezindinganiso ze-MIL-STD-883, ifanele izinto zikagesi zenuzi nezokuvikela.
5. Ukwenza ngokwezifiso & Ukuhlanganisa Ukuvumelana nezimo
I-Crystal Orientation & Doping Optimization:
I-X/Y/Z-cut wafers (±0.3° ukunemba)
I-MgO doping (5 mol%) yokumelana nokulimala okuthuthukisiwe
Ukusekela Okuhlanganisiwe Okungafani:
Ihambisana nefilimu encane i-LiNbO₃-on-Insulator (LNOI) yokuhlanganiswa kwe-hybrid ne-silicon photonics (SiPh)
Inika amandla i-wafer-level bonding ye-co-packaged optics (CPO)
6. Ukukhiqiza Okuthuthukile & Nezindleko Ezinhle
6-intshi (150mm) I-Wafer Mass Production: Yehlisa izindleko zeyunithi ngo-30% uma kuqhathaniswa nezinqubo ezivamile ezingu-4-intshi.
Ukulethwa Okusheshayo: Imikhiqizo ejwayelekile ithunyelwa emavikini angu-3; ama-prototypes ama-batch amancane (ama-wafers amancane ama-5) alethwa ezinsukwini eziyi-10.
Izinsizakalo ze-XKH
1. Ilebhu Yokuqamba Okubalulekile
Ochwepheshe bethu bokukhula kwekristalu basebenzisana namakhasimende ukuthuthukisa ukwakheka kwe-LiNbO₃ Wafers eqondene nohlelo lokusebenza, okuhlanganisa:
Okuhlukile kokulahleka kokubona okuphansi (<0.05dB/cm)
Izilungiselelo zokubamba zamandla aphezulu
Izingoma ezikwazi ukumelana nemisebe
2. Rapid Prototyping Pipeline
Kusukela ekwakhiweni kuya ekulethweni ezinsukwini eziyi-10 zebhizinisi kokuthi:
Ama-wafers okuqondisa ngokwezifiso
Ama-electrode anephethini
Amasampuli anezinhlamvu zangaphambili
3. Isitifiketi Sokusebenza
Konke ukuthunyelwa kwe-LiNbO₃ Wafer kuhlanganisa:
Izinhlamvu ezigcwele ze-spectroscopic
Ukuqinisekiswa kwe-Crystallographic orientation
Isitifiketi sekhwalithi yobuso
4. Isiqinisekiso Sochungechunge Lokuthenga
Imigqa yokukhiqiza enikelwe yezinhlelo zokusebenza ezibalulekile
Ukufakwa kwe-buffer kwama-oda aphuthumayo
Inethiwekhi yezokuthutha ethobela i-ITAR


