Ama-InGaAs epitaxial wafer substrate PD Array photodetector arrays angasetshenziswa ku-LiDAR

Ama-array e-InGaAs epitaxial wafer substrate PD Array photodetector angasetshenziswa ku-LiDAR Featured Image

Incazelo emfushane:

Ifilimu ye-epitaxial ye-InGaAs ibhekisela ku-indium gallium arsenic (InGaAs) ifilimu encane yekristalu eyodwa eyakhiwe ubuchwepheshe bokukhula kwe-epitaxial ku-substrate ethile. I-InGaAs epitaxial substrate evamile yi-indium phosphide (InP) kanye ne-gallium arsenide (GaAs). Lezi zinto ze-substrate zinekhwalithi enhle yekristalu kanye nokuqina kokushisa, okunganikeza i-substrate enhle kakhulu yokukhula kwezingqimba ze-epitaxial ze-InGaAs.
I-PD Array (i-Photodetector Array) iyiqoqo lama-photodetector amaningi angakwazi ukubona izimpawu eziningi ze-optical ngasikhathi sinye. Ishidi le-epitaxial elikhuliswe kusuka ku-MOCVD lisetshenziswa kakhulu kuma-diode okuthola ukukhanya, ungqimba lokumunca lwakhiwe yi-U-InGaAs, i-doping yangemuva ingu-<5E14, kanti i-Zn esabalele ingagcwaliswa yikhasimende noma yi-Epihouse. Amaphilisi e-epitaxial ahlaziywe ngezilinganiso ze-PL, XRD kanye ne-ECV.

Sithumelele i-imeyili

Izici

Izici ezibalulekile zeshidi le-InGaAs laser epitaxial zifaka phakathi

1. Ukufaniswa kwe-lattice: Ukufaniswa kwe-lattice okuhle kungatholakala phakathi kwesendlalelo se-InGaAs epitaxial kanye ne-InP noma i-GaAs substrate, ngaleyo ndlela kuncishiswe ubuningi besici sesendlalelo se-epitaxial futhi kuthuthukiswe ukusebenza kwedivayisi.
2. Igebe lebhendi elilungisekayo: Igebe lebhendi lezinto ze-InGaAs lingatholakala ngokulungisa isilinganiso sezingxenye ze-In ne-Ga, okwenza ishidi le-epitaxial le-InGaAs libe nohlu olubanzi lwamathemba okusetshenziswa kumadivayisi e-optoelectronic.
3. Ukuzwela okuphezulu kwe-photosensitive: Ifilimu ye-InGaAs epitaxial inokuzwela okuphezulu ekukhanyeni, okwenza kube semkhakheni wokutholwa kwe-photoelectric, ukuxhumana kwe-optical kanye nezinye izinzuzo eziyingqayizivele.
4. Ukuqina kwezinga lokushisa eliphezulu: Isakhiwo se-InGaAs/InP epitaxial sinokuzinza kwezinga lokushisa eliphezulu okuhle kakhulu, futhi singagcina ukusebenza kwedivayisi okuzinzile emazingeni okushisa aphezulu.

Ukusetshenziswa okuyinhloko kwamaphilisi epitaxial e-InGaAs laser kufaka phakathi

1. Amadivayisi e-Optoelectronic: Amaphilisi e-InGaAs epitaxial angasetshenziswa ukukhiqiza ama-photodiode, ama-photodetector kanye namanye amadivayisi e-optoelectronic, anezinhlelo zokusebenza eziningi ekuxhumaneni kwe-optical, ekuboneni ebusuku kanye neminye imikhakha.

2. Ama-Laser: Amashidi e-InGaAs epitaxial angasetshenziswa futhi ukukhiqiza ama-laser, ikakhulukazi ama-laser amade-wavelength, adlala indima ebalulekile ekuxhumaneni kwe-optical fiber, ekucutshungulweni kwezimboni nakwezinye izinkambu.

3. Amaseli elanga: Izinto ze-InGaAs zinobubanzi bokulungiswa kwegebe lebhendi, ezingahlangabezana nezidingo zegebe lebhendi ezidingwa amaseli e-photovoltaic ashisayo, ngakho-ke ishidi le-epitaxial le-InGaAs linamandla athile okusebenzisa emkhakheni wamaseli elanga.

4. Ukuthwebula izithombe zezokwelapha: Emishinini yokuthwebula izithombe zezokwelapha (njenge-CT, i-MRI, njll.), ukuze kutholakale futhi kuthwebulwe izithombe.

5. Inethiwekhi yezinzwa: ekuqapheni imvelo nasekutholeni igesi, amapharamitha amaningi angaqashwa ngasikhathi sinye.

6. Ukuzenzakalela kwezimboni: kusetshenziswa ezinhlelweni zokubona komshini ukuqapha isimo kanye nekhwalithi yezinto ezikumugqa wokukhiqiza.

Esikhathini esizayo, izakhiwo zezinto ezibonakalayo ze-InGaAs epitaxial substrate zizoqhubeka nokuthuthuka, okuhlanganisa ukuthuthukiswa kokusebenza kahle kokuguqulwa kwe-photoelectric kanye nokunciphisa amazinga omsindo. Lokhu kuzokwenza i-InGaAs epitaxial substrate isetshenziswe kabanzi kumadivayisi e-optoelectronic, futhi ukusebenza kuhle kakhulu. Ngesikhathi esifanayo, inqubo yokulungiselela izophinde ithuthukiswe njalo ukuze kuncishiswe izindleko futhi kuthuthukiswe ukusebenza kahle, ukuze kuhlangatshezwane nezidingo zemakethe enkulu.

Ngokuvamile, i-InGaAs epitaxial substrate ithatha isikhundla esibalulekile emkhakheni wezinto ze-semiconductor ngezici zayo ezihlukile kanye namathemba okusetshenziswa okubanzi.

I-XKH inikeza ukwenza ngokwezifiso amashidi e-epitaxial e-InGaAs anezakhiwo nobukhulu obuhlukene, ehlanganisa izinhlelo zokusebenza eziningi zamadivayisi e-optoelectronic, ama-laser, namaseli elanga. Imikhiqizo ye-XKH yakhiqizwa ngemishini ye-MOCVD ethuthukisiwe ukuqinisekisa ukusebenza okuphezulu nokuthembeka. Ngokuphathelene nokuthutha, i-XKH ineziteshi eziningi zomthombo wamazwe ngamazwe, ezingaphatha inani lama-oda ngendlela eguquguqukayo, futhi zinikeze izinsizakalo ezinenani elingeziwe njengokulungiswa nokuhlukaniswa. Izinqubo zokulethwa eziphumelelayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende zekhwalithi nezikhathi zokulethwa.