I-HPSI SiCOI wafer engu-4 6inch Hydropholic Bonding

Isithombe Esifakiwe Se-HPSI SiCOI Wafer 4 6inch Hydropholic Bonding

Incazelo emfushane:

Ama-wafer e-high-purity semi-insulating (HPSI) 4H-SiCOI athuthukiswa kusetshenziswa ubuchwepheshe obuthuthukisiwe bokubopha nokunciphisa. Ama-wafer enziwa nge-bonding 4H HPSI silicon carbide substrates ezingqimbeni ze-thermal oxide ngezindlela ezimbili ezibalulekile: i-hydrophilic (direct) bonding kanye ne-surface activated bonding. Lokhu kwamuva kwethula ungqimba oluguquliwe oluphakathi (njenge-amorphous silicon, i-aluminium oxide, noma i-titanium oxide) ukuthuthukisa ikhwalithi ye-bond nokunciphisa amabhamuza, ikakhulukazi afanele ukusetshenziswa kwe-optical. Ukulawulwa kobukhulu bengqimba ye-silicon carbide kufezwa nge-SmartCut esekelwe ekufakweni kwe-ion noma izinqubo zokugaya kanye ne-CMP polishing. I-SmartCut inikeza ukufana kobukhulu obuphezulu (50nm–900nm ngokufana kwe-±20nm) kodwa ingabangela umonakalo omncane wekristalu ngenxa yokufakwa kwe-ion, okuthinta ukusebenza kwedivayisi ye-optical. Ukugaya kanye ne-CMP polishing kugwema ukulimala kwezinto futhi kukhethwa amafilimu amakhulu (350nm–500µm) kanye nezinhlelo zokusebenza ze-quantum noma ze-PIC, yize kufana kancane kobukhulu (±100nm). Ama-wafer ajwayelekile angamasentimitha angu-6 aqukethe ungqimba lwe-SiC oluyi-1µm ±0.1µm ongqimbeni lwe-SiO2 oluyi-3µm oluphezulu kwama-substrate e-Si angu-675µm anobushelelezi obumangalisayo bomphezulu (Rq < 0.2nm). Lawa ma-wafer e-HPSI SiCOI anakekela ukukhiqizwa kwamadivayisi e-MEMS, PIC, quantum, kanye ne-optical ngekhwalithi yezinto ezibonakalayo kanye nokuguquguquka kwenqubo.

Sithumelele i-imeyili

Izici

Ukubuka Konke Kwezakhiwo Ze-SiCOI Wafer (Silicon Carbide-on-Insulator)

Ama-wafer e-SiCOI ayi-substrate yesizukulwane esisha ye-semiconductor ehlanganisa i-Silicon Carbide (SiC) nesendlalelo sokuvikela, ngokuvamile i-SiO₂ noma i-sapphire, ukuthuthukisa ukusebenza kwe-electronics yamandla, i-RF, kanye ne-photonics. Ngezansi umbono oningiliziwe wezakhiwo zawo ezihlukaniswe ngezigaba ezibalulekile:

Impahla	Incazelo
Ukwakheka Kwezinto	Isendlalelo se-Silicon Carbide (SiC) esiboshwe ku-substrate evikelayo (ngokuvamile i-SiO₂ noma i-sapphire)
Isakhiwo sekristalu	Ngokuvamile ama-polytype angu-4H noma angu-6H e-SiC, aziwa ngekhwalithi ephezulu yekristalu kanye nokufana
Izakhiwo Zikagesi	Insimu kagesi ephukile kakhulu (~3 MV/cm), igebe elibanzi (~3.26 eV ye-4H-SiC), ukuvuza okuphansi
Ukuqhuba Okushisayo	Ukushisa okuphezulu (~300 W/m·K), okuvumela ukushabalaliswa kokushisa okuphumelelayo
Isendlalelo se-Dielectric	Isendlalelo sokuvikela (i-SiO₂ noma i-sapphire) sinikeza ukwahlukaniswa kukagesi futhi kunciphisa amandla ezinambuzane
Izakhiwo Zemishini	Ubulukhuni obuphezulu (~9 Mohs scale), amandla amahle kakhulu omshini, kanye nokuqina kokushisa
Ukuqedwa Komphezulu	Ngokuvamile ibushelelezi kakhulu futhi inobukhulu obuphansi besici, ifaneleka ekwakhiweni kwedivayisi
Izicelo	Ama-elekthronikhi kagesi, amadivayisi e-MEMS, amadivayisi e-RF, izinzwa ezidinga ukubekezelela izinga lokushisa eliphezulu kanye ne-voltage

Ama-wafer e-SiCOI (i-Silicon Carbide-on-Insulator) amelela isakhiwo se-substrate se-semiconductor esithuthukisiwe, esakhiwe ungqimba oluncane lwe-silicon carbide (SiC) olusezingeni eliphezulu oluboshwe kungqimba lokuvikela, ngokuvamile i-silicon dioxide (SiO₂) noma i-sapphire. I-Silicon carbide iyi-semiconductor ye-wide-bandgap eyaziwa ngekhono layo lokubekezelela ama-voltage aphezulu kanye namazinga okushisa aphezulu, kanye nokuqhuba kahle kokushisa kanye nokuqina okuphezulu komshini, okwenza kube kuhle kakhulu kwizicelo ze-elekthronikhi ezinamandla aphezulu, ama-frequency aphezulu, kanye namazinga okushisa aphezulu.

Isendlalelo sokuvikela kuma-wafer e-SiCOI sinikeza ukuhlukaniswa kukagesi okusebenzayo, kunciphisa kakhulu amandla ezinambuzane kanye nemisinga yokuvuza phakathi kwamadivayisi, ngaleyo ndlela kuthuthukisa ukusebenza kwedivayisi iyonke kanye nokuthembeka. Ubuso be-wafer bucwebezelisiwe kahle ukuze kufezwe ukushelela okukhulu okuneziphambeko ezincane, kuhlangatshezwane nezidingo eziqinile zokwenziwa kwamadivayisi amancane namakhulu.

Lesi sakhiwo sezinto ezibonakalayo asigcini nje ngokuthuthukisa izici zikagesi zamadivayisi e-SiC kodwa futhi sithuthukisa kakhulu ukuphathwa kokushisa kanye nokuzinza kwemishini. Ngenxa yalokho, ama-wafer e-SiCOI asetshenziswa kabanzi kuma-electronics anamandla, izingxenye ze-radio frequency (RF), izinzwa ze-microelectromechanical systems (MEMS), kanye nama-electronics okushisa okuphezulu. Sekukonke, ama-wafer e-SiCOI ahlanganisa izakhiwo zomzimba eziyingqayizivele ze-silicon carbide nezinzuzo zokuhlukanisa ugesi zesendlalelo se-insulator, okuhlinzeka ngesisekelo esifanele sesizukulwane esilandelayo samadivayisi e-semiconductor asebenza kahle kakhulu.

Isicelo se-SiCOI wafer

Amadivayisi kagesi kagesi

Amaswishi anamandla aphezulu kanye namandla aphezulu, ama-MOSFET, kanye nama-diode

Zuza ku-bandgap ebanzi ye-SiC, i-voltage ephezulu yokuwohloka, kanye nokuqina kokushisa

Ukulahlekelwa kwamandla okuncishisiwe kanye nokusebenza kahle okuthuthukisiwe ezinhlelweni zokuguqulwa kwamandla

Izingxenye ze-Radio Frequency (RF)

Ama-transistors nama-amplifier asebenza ngesivinini esiphezulu

Umthamo ophansi we-parasitic ngenxa yesendlalelo sokuvikela ugesi uthuthukisa ukusebenza kwe-RF

Ifanele izinhlelo zokuxhumana ze-5G kanye ne-radar

Izinhlelo ze-Microelectromechanical (MEMS)

Izinzwa nama-actuator asebenza ezindaweni ezinzima

Ukuqina kwemishini kanye nokungangeni kwamakhemikhali kwandisa isikhathi sokuphila kwedivayisi

Kufaka phakathi izinzwa zokucindezela, ama-accelerometer, nama-gyroscope

Ama-elekthronikhi Asezingeni Eliphezulu Lokushisa

Ama-elekthronikhi ezinhlelo zokusebenza zezimoto, zezindiza kanye nezezimboni

Sebenzisa ngokuthembekile emazingeni okushisa aphezulu lapho i-silicon yehluleka khona

Amadivayisi e-Photonic

Ukuhlanganiswa nezingxenye ze-optoelectronic kuma-substrate e-insulator

Inika amandla ama-photonics aku-chip ngokuphathwa okuthuthukisiwe kokushisa

Imibuzo Nezimpendulo ze-SiCOI wafer

Umbuzo:iyini i-SiCOI wafer

A:I-wafer ye-SiCOI imele i-Silicon Carbide-on-Insulator wafer. Luhlobo lwe-substrate ye-semiconductor lapho ungqimba oluncane lwe-silicon carbide (SiC) luboshelwa khona kungqimba oluvikelayo, ngokuvamile i-silicon dioxide (SiO₂) noma ngezinye izikhathi i-sapphire. Lesi sakhiwo sifana ngomqondo nama-wafer e-Silicon-on-Insulator (SOI) aziwayo kodwa asebenzisa i-SiC esikhundleni se-silicon.