I-GaN ku-Glass engu-4-Inch: Izinketho Zengilazi Ezingenziwa Ngokwezifiso Kufaka phakathi i-JGS1, i-JGS2, i-BF33, kanye ne-Ordinary Quartz

I-GaN ku-Glass engu-4-Inch: Izinketho Zengilazi Ezingenziwa Ngokwezifiso Ezihlanganisa Isithombe Esivelele se-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz

Incazelo emfushane:

OkwethuAma-Wafer angu-4-intshi e-GaN ku-Glass anikezwa ngendlela oyifisayoIzinketho ze-substrate yengilazi ezifaka phakathi i-JGS1, i-JGS2, i-BF33, kanye ne-Ordinary Quartz, ezenzelwe izinhlelo zokusebenza ezahlukahlukene kuma-optoelectronics, amadivayisi anamandla aphezulu, kanye nezinhlelo ze-photonic. I-Gallium Nitride (GaN) iyi-semiconductor ye-wide-bandgap enikeza ukusebenza okuhle kakhulu ezindaweni ezishisa kakhulu nezivame kakhulu. Uma ikhuliswe kuma-substrate engilazi, i-GaN inikeza izakhiwo ezinhle kakhulu zemishini, ukuqina okuthuthukisiwe, kanye nokukhiqizwa okungabizi kakhulu kwezinhlelo zokusebenza ezisezingeni eliphezulu. Lawa ma-wafer alungele ukusetshenziswa kuma-LED, ama-laser diode, ama-photodetector, kanye namanye amadivayisi e-optoelectronic adinga ukusebenza okuphezulu kokushisa nogesi. Ngezinketho zengilazi ezenzelwe wena, ama-wafer ethu engilazi e-GaN ahlinzeka ngezixazululo eziguquguqukayo nezisebenza kahle ukuze kuhlangatshezwane nezidingo zezimboni zesimanje ze-elekthronikhi neze-photonic.

Sithumelele i-imeyili

Izici

●Isikhala Esibanzi Sebhendi:I-GaN ine-bandgap engu-3.4 eV, evumela ukusebenza kahle okuphezulu nokuqina okukhulu ngaphansi kwezimo ze-voltage ephezulu kanye nokushisa okuphezulu uma kuqhathaniswa nezinto ze-semiconductor zendabuko njenge-silicon.
●Izingqimba Zengilazi Ezingenziwa Ngokwezifiso:Itholakala ngezinketho zengilazi ze-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz ukuze ihlangabezane nezidingo ezahlukene zokusebenza kokushisa, okomshini, kanye nokukhanya.
●Ukusebenza Okuphezulu Kokushisa:Ukushisa okuphezulu kwe-GaN kuqinisekisa ukushabalaliswa kokushisa okuphumelelayo, okwenza lawa ma-wafer afanelekele ukusetshenziswa kwamandla namadivayisi akhiqiza ukushisa okuphezulu.
●I-Voltage Ephezulu Yokuqhekeka:Ikhono le-GaN lokusekela ama-voltage aphezulu lenza lawa ma-wafer afanelekele ama-transistors anamandla kanye nezinhlelo zokusebenza zemvamisa ephezulu.
● Amandla Aphezulu Kakhulu Omshini:Izingcezu zengilazi, ezihlanganiswe nezakhiwo zeGaN, zinikeza amandla aqinile okusebenza, zithuthukisa ukuqina kwe-wafer ezindaweni ezidinga kakhulu.
●Izindleko Zokukhiqiza Ezincishisiwe:Uma kuqhathaniswa nama-wafer endabuko e-GaN-on-Silicon noma e-GaN-on-Sapphire, i-GaN-on-glass iyisisombululo esingabizi kakhulu sokukhiqizwa okukhulu kwamadivayisi asebenza kahle kakhulu.
●Izakhiwo Zokukhanya Ezilungiselelwe:Izinketho ezahlukene zengilazi zivumela ukwenza ngezifiso izici zokukhanya ze-wafer, okwenza ifaneleke ukusetshenziswa kuma-optoelectronics kanye nama-photonics.

Imininingwane Yobuchwepheshe

Ipharamitha	Inani
Usayizi we-Wafer	Amasentimitha angu-4
Izinketho Ze-Glass Substrate	I-JGS1, i-JGS2, i-BF33, i-Ordinary Quartz
Ubukhulu Besendlalelo se-GaN	100 nm – 5000 nm (kungenziwa ngezifiso)
I-GaN Bandgap	3.4 eV (isikhala esikhulu)
I-Voltage Yokuqhekeka	Kufika ku-1200V
Ukuqhuba Okushisayo	1.3 – 2.1 W/cm·K
Ukuhamba Kwe-Electron	2000 cm²/V·s
Ubulukhuni Bomphezulu We-Wafer	I-RMS ~0.25 nm (AFM)
Ukumelana Neshidi Le-GaN	437.9 Ω·cm²
Ukumelana	Ukuvikela okuncane, uhlobo lwe-N, uhlobo lwe-P (olungenziwa ngezifiso)
Ukudluliselwa Kokukhanya	>80% yamaza okukhanya abonakalayo kanye nama-UV
I-Wafer Warp	< 25 µm (ubuningi)
Ukuqedwa Komphezulu	I-SSP (epholishiwe ohlangothini olulodwa)

Izicelo

Optoelectronics:
Ama-wafer e-GaN-on-glass asetshenziswa kabanziAma-LEDfuthiama-diode e-laserngenxa yokusebenza kahle kwe-GaN kanye nokusebenza kahle kokukhanya. Amandla okukhetha izinto ezisetshenziswa ngengilazi ezifanaI-JGS1futhiI-JGS2ivumela ukwenza ngokwezifiso ukucaca okubonakalayo, okwenza kube kuhle kakhulu ekukhanyeni okuphezulu namandla aphezuluama-LED aluhlaza okwesibhakabhaka/aluhlazafuthiAma-laser e-UV.

Ama-Photonics:
Ama-wafer engilazi e-GaN alungele ukusetshenziswaama-photodetectors, amasekethe ahlanganisiwe e-photonic (ama-PIC), futhiizinzwa zokubonaIzakhiwo zabo ezinhle kakhulu zokudlulisa ukukhanya kanye nokuqina okuphezulu ekusetshenzisweni kwemvamisa ephezulu kuzenza zifaneleke kakhuluukuxhumanafuthiubuchwepheshe bezinzwa.

Amandla kagesi:
Ngenxa yesikhala sazo esikhulu kanye ne-voltage ephezulu yokuqhekeka, ama-wafer e-GaN-on-glass asetshenziswa ku-ama-transistors anamandla aphezulufuthiukuguqulwa kwamandla okuvama okuphezuluIkhono le-GaN lokusingatha ama-voltage aphezulu kanye nokushabalaliswa kokushisa lenza kube kuhle kakhuluama-amplifier kagesi, Ama-transistors amandla e-RF, futhiugesi kagesikwezicelo zezimboni kanye nabathengi.

Izicelo Ezivame Kakhulu:
Ama-wafer engilazi e-GaN abonisa kahle kakhuluukuhamba kwe-electronfuthi ingasebenza ngesivinini esikhulu sokushintsha, okwenza kube kuhle kakhuluamadivayisi wamandla avame kakhulu, amadivayisi e-microwave, futhiAma-amplifier e-RFLezi yizingxenye ezibalulekile kuIzinhlelo zokuxhumana ze-5G, izinhlelo ze-radar, futhiukuxhumana ngesathelayithi.

Izicelo Zezimoto:
Ama-wafer engilazi e-GaN nawo asetshenziswa ezinhlelweni zamandla ezimoto, ikakhulukaziamashaja asebhodini (ama-OBC)futhiAbaguquli be-DC-DCkwezimoto zikagesi (ama-EV). Ikhono lama-wafer lokusingatha amazinga okushisa aphezulu kanye nama-voltage liwavumela ukuthi asetshenziswe kuma-electronics kagesi kuma-EV, okunikeza ukusebenza kahle okukhulu kanye nokuthembeka.

Amadivayisi Ezokwelapha:
Izakhiwo ze-GaN ziyenza ibe yinto ekhangayo yokusetshenziswa ku-izithombe zezokwelaphafuthiizinzwa zezokwelaphaAmandla ayo okusebenza ngama-voltage aphezulu kanye nokumelana kwayo nemisebe kwenza ibe yindawo ekahle kakhulu yokusetshenziswa ku-imishini yokuxilongafuthiama-laser ezokwelapha.

Imibuzo Nezimpendulo

Umbuzo 1: Kungani i-GaN-on-glass iyindlela enhle uma iqhathaniswa ne-GaN-on-Silicon noma i-GaN-on-Sapphire?

A1:I-GaN-on-glass inikeza izinzuzo eziningana, okuhlanganisaukusebenza kahle kwezindlekofuthiukuphathwa okungcono kokushisaNakuba i-GaN-on-Silicon kanye ne-GaN-on-Sapphire zinikeza ukusebenza okuhle kakhulu, izisekelo zengilazi zishibhile, zitholakala kalula, futhi zingenziwa ngezifiso ngokwezakhiwo zokukhanya nezemishini. Ngaphezu kwalokho, ama-wafer engilazi e-GaN-on-glass anikeza ukusebenza okuhle kakhulu kuzo zombiliukukhanyafuthiizinhlelo zokusebenza ze-elekthronikhi ezinamandla aphezulu.

Umbuzo 2: Uyini umehluko phakathi kwezinketho zengilazi ze-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz?

A2:

I-JGS1futhiI-JGS2ziyizingqimba zeglasi ezibonakalayo zekhwalithi ephezulu ezaziwa ngazoukubonakala okuphezulu kokukhanyafuthiukwanda okuphansi kokushisa, okwenza zibe zilungele amadivayisi e-photonic kanye ne-optoelectronic.
BF33okunikezwayo kwengilaziinkomba yokubuyisa ephezulufuthi ilungele izinhlelo zokusebenza ezidinga ukusebenza okuthuthukisiwe kokukhanya, njengokuthiama-diode e-laser.
I-Quartz Ejwayelekileinikeza okuphezuluukuzinza kokushisafuthiukumelana nemisebe, okwenza ifaneleke ukusetshenziswa ezindaweni ezishisa kakhulu nezinolaka.

U-3: Ngingakwazi yini ukwenza ngokwezifiso uhlobo lokumelana nokusetshenziswa kwezidakamizwa kuma-wafer engilazi e-GaN?

A3:Yebo, sinikezaukumelana ngokwezifisofuthiizinhlobo zokusebenzisa izidakamizwa(Uhlobo lwe-N noma uhlobo lwe-P) lwama-wafer engilazini e-GaN. Lokhu kuguquguquka kuvumela ama-wafer ukuthi alungiselelwe izinhlelo zokusebenza ezithile, kufaka phakathi amadivayisi kagesi, ama-LED, kanye nezinhlelo ze-photonic.

Umbuzo 4: Yiziphi izinhlelo zokusebenza ezijwayelekile ze-GaN-on-glass kuma-optoelectronics?

A4:Ku-optoelectronics, ama-wafer e-GaN-on-glass avame ukusetshenziswaama-LED aluhlaza okwesibhakabhaka nokuluhlaza, Ama-laser e-UV, futhiama-photodetectorsIzakhiwo ezibonakalayo zengilazi ezingenziwa ngokwezifiso zivumela amadivayisi ane-highukudluliswa kokukhanya, okwenza zibe zilungele ukusetshenziswa kuubuchwepheshe bokubonisa, ukukhanyisa, futhiizinhlelo zokuxhumana ezibonakalayo.

Q5: Isebenza kanjani i-GaN-on-glass ezinhlelweni zokusebenza ezivame kakhulu?

A5:Ama-wafer engilazini e-GaN anikezwaukuhamba kahle kwama-electron, okubavumela ukuthi basebenze kahle kuizinhlelo zokusebenza ezivame kakhulunjengeAma-amplifier e-RF, amadivayisi e-microwave, futhiIzinhlelo zokuxhumana ze-5GAmandla azo aphezulu okuphazamiseka kanye nokulahlekelwa kokushintsha okuphansi kuzenza zifanelekeleamadivayisi e-RF anamandla aphezulu.

Umbuzo 6: Iyini i-voltage evamile yokuqhekeka kwama-wafer engilazi e-GaN?

A6:Ama-wafer engilazini e-GaN avame ukusekela ama-voltage okuqhekeka afinyelela ku-1200V, okwenza zifanelekeamandla aphezulufuthiamandla aphezulu kagesiizinhlelo zokusebenza. Igebe labo elibanzi libavumela ukuthi baphathe ama-voltage aphezulu kunezinto ezivamile ze-semiconductor njenge-silicon.

Umbuzo 7: Ingabe ama-wafer engilazi e-GaN angasetshenziswa ezindleleni zokusebenzisa izimoto?

A7:Yebo, ama-wafer engilazini e-GaN asetshenziswa kui-elekthronikhi yamandla ezimoto, kufaka phakathiAbaguquli be-DC-DCfuthiamashaja asebhodini(ama-OBC) ezimotweni zikagesi. Ikhono lazo lokusebenza emazingeni okushisa aphezulu nokusingatha ama-voltage aphezulu kuzenza zilungele lezi zinhlelo zokusebenza ezidinga amandla.

Isiphetho

Ama-Wafer ethu e-GaN on Glass angu-4-Inch anikeza ikhambi eliyingqayizivele nelingenziwa ngezifiso lezinhlelo zokusebenza ezahlukahlukene kuma-optoelectronics, ama-electronics anamandla, kanye nama-photonics. Ngezinketho ze-substrate yengilazi njenge-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz, lawa ma-wafer ahlinzeka ngokuguquguquka kokubili ezicini zemishini nezokukhanya, okwenza kube lula izixazululo ezenzelwe amadivayisi anamandla aphezulu kanye nama-frequency aphezulu. Kungakhathaliseki ukuthi ama-LED, ama-laser diode, noma izinhlelo zokusebenza ze-RF, ama-wafer engilazi e-GaN