I-GaN ku-Glass 4-Intshi: Izinketho Zengilazi Ezenzeka Ngokwezifiso Kuhlanganisa i-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz

I-GaN ku-Glass 4-Intshi: Izinketho Ze-Glass Ezenzeka Ngokwezifiso Kuhlanganisa I-JGS1, JGS2, BF33, kanye Nesithombe Esifakiwe Se-Quartz Esivamile

Incazelo emfushane:

EyethuI-GaN ku-Glass 4-Inch Wafers inikezela ngokwenza ngokwezifisoizinketho ze-glass substrate ezihlanganisa i-JGS1, i-JGS2, i-BF33, ne-Ordinary Quartz, edizayinelwe uhla olubanzi lwezinhlelo zokusebenza ku-optoelectronics, amadivayisi anamandla amakhulu, nezinhlelo ze-photonic. I-Gallium Nitride (GaN) iyi-semiconductor ene-wide-bandgap ehlinzeka ngokusebenza okuhle kakhulu ezindaweni ezinezinga lokushisa eliphezulu kanye nemvamisa ephezulu. Uma ikhuliswe kuma-substrates engilazi, i-GaN inikezela ngezakhiwo zemishini ezihlukile, ukuqina okuthuthukisiwe, nokukhiqizwa okungabizi kakhulu kwezinhlelo zokusebenza ezisezingeni eliphezulu. Lawa mawafa alungele ukusetshenziswa kuma-LED, ama-laser diode, ama-photodetectors, namanye amadivaysi e-optoelectronic adinga ukusebenza okuphezulu okushisayo nogesi. Ngezinketho zengilazi ezenzelwe wena, amawafa ethu e-GaN-on-glass ahlinzeka ngezixazululo eziguquguqukayo nezisebenza kakhulu ukuze kuhlangatshezwane nezidingo zezimboni zesimanje zikagesi nezezithombe.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici

●I-Bandgap ebanzi:I-GaN ine-bandgap engu-3.4 eV, evumela ukusebenza kahle okuphezulu nokuqina okukhulu ngaphansi kwezimo ze-voltage ephezulu kanye nezinga lokushisa eliphezulu uma kuqhathaniswa nezinto ezivamile ze-semiconductor njenge-silicon.
●Ama-Glass Substrates enziwa ngendlela oyifisayo:Itholakala nge-JGS1, JGS2, BF33, kanye nezinketho zengilazi ze-Quartz Ezijwayelekile ukuze kuhlangatshezwane nezidingo ezihlukile zokusebenza kwe-thermal, mechanical, kanye ne-optical.
●High Thermal Conductivity:I-Thermal conductivity ephezulu ye-GaN iqinisekisa ukunqanyulwa kokushisa okusebenzayo, okwenza lawa mawafa alungele ukusetshenziswa kwamandla namadivayisi akhiqiza ukushisa okuphezulu.
● I-Voltage Yokuhlukana Okuphezulu:Ikhono le-GaN lokusekela ama-voltage aphezulu lenza lawa mawafa afanelekele ama-transistors kagesi kanye nezicelo zamafrikhwensi aphezulu.
●Amandla Emishini Anhle Kakhulu:Ama-substrates engilazi, ahlanganiswe nezakhiwo ze-GaN, anikeza amandla aqinile emishini, athuthukisa ukuqina kwe-wafer ezindaweni ezinzima.
●Izindleko Ezehlisiwe Zokukhiqiza:Uma kuqhathaniswa namawafa endabuko e-GaN-on-Silicon noma e-GaN-on-Sapphire, i-GaN-on-glass iyisixazululo esingabizi kakhulu sokukhiqiza okukhulu kwamadivayisi asebenza kahle kakhulu.
●Izici Zokubona Ezihlanganisiwe:Izinketho ezihlukahlukene zengilazi zivumela ukwenziwa ngokwezifiso kwezimpawu ze-optical ye-wafer, iyenze ifaneleke izinhlelo zokusebenza ku-optoelectronics ne-photonics.

Imininingwane Yezobuchwepheshe

Ipharamitha	Inani
Usayizi we-Wafer	4-intshi
Izinketho ze-Glass Substrate	I-JGS1, JGS2, BF33, I-Quartz Ejwayelekile
Ukuqina Kwengqimba ye-GaN	100nm – 5000nm (ngezifiso)
I-GaN Bandgap	3.4 eV (ibhendi ebanzi)
Ukuhlukaniswa kwe-Voltage	Kufika ku-1200V
I-Thermal Conductivity	1.3 – 2.1 W/cm·K
I-electron Mobility	2000 cm²/V·s
I-Wafer Surface Roughness	I-RMS ~0.25 nm (AFM)
I-GaN Sheet Resistance	437.9 Ω·cm²
Ukungazweli	I-Semi-insulating, i-N-type, uhlobo lwe-P (okwenziwa ngokwezifiso)
Ukudluliswa kwe-Optical	> 80% wamaza abonakalayo nama-UV
I-Wafer Warp	< 25 µm (ubuningi)
I-Surface Qeda	I-SSP (ipholishelwe ohlangothini olulodwa)

Izinhlelo zokusebenza

I-Optoelectronics:
Ama-wafers e-GaN-on-glass asetshenziswa kabanzi kuAma-LEDfuthiama-laser diodesngenxa yokusebenza kahle okuphezulu kwe-GaN nokusebenza kokubona. Ikhono lokukhetha ingilazi substrates ezifanaJGS1futhiJGS2ivumela ukwenziwa ngendlela oyifisayo ekukhanyeni kwe-optical, okuyenza ilungele amandla aphezulu, ukukhanya okuphezuluama-LED aluhlaza/aluhlazafuthiAma-laser we-UV.

Ezezithombe:
Ama-wafers e-GaN-on-glass alungeleama-photodetectors, ama-photonic integrated circuits (PICs), futhiizinzwa optical. Izakhiwo zabo ezinhle kakhulu zokudlulisa ukukhanya kanye nokuzinza okuphezulu ezinhlelweni ze-high-frequency kubenza bafanelekeezokuxhumanafuthiubuchwepheshe bezinzwa.

Amandla kagesi:
Ngenxa ye-bandgap ebanzi kanye ne-voltage ephezulu yokuphuka, amawafa e-GaN-on-glass asetshenziswa kuama-transistors aphezulufuthiukuguqulwa kwamandla okuvama okuphezulu. Ikhono le-GaN lokuphatha ama-voltage aphezulu kanye nokushabalalisa okushisayo kuyenza ipheleleizikhulisamandla amandla, RF amandla transistors, futhiamandla kagesiezinhlelweni zezimboni nezabathengi.

Izinhlelo zokusebenza ze-High-Frequency:
Ama-wafers e-GaN-on-glass abonisa okuhle kakhuluukuhamba kwe-electronfuthi ingasebenza ngesivinini esikhulu sokushintsha, okubenza bafanelekeamadivaysi amandla e-high-frequency, imishini ye-microwave, futhiAma-amplifiers e-RF. Lezi izingxenye ezibalulekile kuIzinhlelo zokuxhumana ze-5G, izinhlelo ze-radar, futhiukuxhumana ngesathelayithi.

Izicelo Zezimoto:
Amawafa e-GaN-on-glass nawo asetshenziswa ezinhlelweni zamandla ezimoto, ikakhulukazi kuAmashaja angaphakathi ebhodini (OBCs)futhiIziguquli ze-DC-DCezimotweni zikagesi (EVs). Ikhono lama-wafers lokusingatha amazinga okushisa aphezulu nama-voltage liwavumela ukuthi asetshenziswe kuma-electronics wamandla kuma-EVs, anikeze ukusebenza kahle okukhulu nokuthembeka.

Amadivayisi Ezokwelapha:
Izakhiwo ze-GaN ziyenza ibe yinto ekhangayo ukuze isetshenziswe kuyoizithombe zezokwelaphafuthiizinzwa ze-biomedical. Ikhono layo lokusebenza ngama-voltage aphezulu kanye nokumelana kwayo nemisebe kuyenza ilungele izinhlelo zokusebenza kuyoimishini yokuxilongafuthiama-laser ezokwelapha.

Q&A

Q1: Kungani i-GaN-on-glass iyindlela enhle uma iqhathaniswa ne-GaN-on-Silicon noma i-GaN-on-Sapphire?

A1:I-GaN-on-glass inikeza izinzuzo eziningana, kuhlanganiseukuphumelela kwezindlekofuthiukuphathwa okungcono kwe-thermal. Nakuba i-GaN-on-Silicon ne-GaN-on-Sapphire zinikeza ukusebenza okuhle kakhulu, ama-substrates engilazi ashibhile, atholakala kalula, futhi enziwa ngendlela oyifisayo ngokuya ngezakhiwo zokubona nemishini. Ukwengeza, ama-wafers e-GaN-on-glass ahlinzeka ngokusebenza okuhle kakhulu kukho kokubiliopticalfuthiizinhlelo zokusebenza ze-elekthronikhi ezinamandla amakhulu.

Q2: Uyini umehluko phakathi kwezinketho zengilazi ze-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz?

A2:

JGS1futhiJGS2zingama-glass optical substrates asezingeni eliphezulu aziwa ngawoukukhanya okuphezulu kwe-opticalfuthiukwanda okushisayo okuphansi, okubenza bafaneleke kumadivayisi we-photonic kanye ne-optoelectronic.
BF33ingilazi inikezainkomba ephezulu ye-refractivefuthi ilungele izinhlelo zokusebenza ezidinga ukusebenza okuthuthukisiwe kokubona, okufanaama-laser diodes.
I-Quartz Ejwayelekileinikeza okusezingeni eliphezuluukuzinza okushisayofuthiukumelana nemisebe, okwenza ifaneleke ekusetshenzisweni kwezinga lokushisa eliphezulu kanye nemvelo enokhahlo.

Q3: Ngingakwazi yini ukwenza ngokwezifiso ukumelana nohlobo lwe-doping lwamawafa e-GaN-on-glass?

A3:Yebo, sinikezaresistivity customizablefuthiizinhlobo ze-doping(Uhlobo lwe-N noma uhlobo lwe-P) lwamawafa e-GaN-on-glass. Lokhu kuvumelana nezimo kuvumela amawafa ukuthi enziwe ngendlela efanele izinhlelo zokusebenza ezithile, okuhlanganisa amadivayisi kagesi, ama-LED, namasistimu ezithombe.

Q4: Yiziphi izinhlelo zokusebenza ezijwayelekile ze-GaN-on-glass ku-optoelectronics?

A4:Ku-optoelectronics, amawafa e-GaN-on-glass avame ukusetshenziselwaama-LED aluhlaza naluhlaza, Ama-laser we-UV, futhiama-photodetectors. Izakhiwo ze-optical ezenziwe ngokwezifiso zengilazi zivumela amadivayisi anezinga eliphezuluukudluliswa kokukhanya, okubenza balungele izinhlelo zokusebenza kubonisa ubuchwepheshe, ukukhanya, futhioptical zokuxhumana izinhlelo.

I-Q5: Isebenza kanjani i-GaN-on-glass ezinhlelweni ze-high-frequency?

A5:Ukunikezwa kwe-GaN-on-glass wafersukuhamba kahle kwe-electron, okubenza basebenze kahleizicelo high-frequencynjengeAma-amplifiers e-RF, imishini ye-microwave, futhiIzinhlelo zokuxhumana ze-5G. I-voltage yabo ephezulu yokuphuka kanye nokulahlekelwa kokushintsha okuphansi kubenza bafanelekeAmadivayisi we-RF anamandla aphezulu.

I-Q6: Ithini i-voltage yokuwohloka evamile yama-wafers e-GaN-on-glass?

A6:Amawafa e-GaN-on-glass ngokuvamile asekela ukuhlukaniswa kwama-voltage afika phezulu1200V, okwenza zifanelekeamandla aphezulufuthihigh-voltageizicelo. I-bandgap yabo ebanzi ibavumela ukuthi baphathe ama-voltage aphezulu kunezinto ezijwayelekile ze-semiconductor njenge-silicon.

Q7: Ingabe amawafa e-GaN-on-glass angasetshenziswa ezinhlelweni zezimoto?

A7:Yebo, ama-wafers e-GaN-on-glass asetshenziswa kuizimoto zamandla kagesi, kuhlanganiseIziguquli ze-DC-DCfuthiamashaja asebhodini(OBCs) wezimoto zikagesi. Amandla azo okusebenza emazingeni okushisa aphezulu kanye nokuphatha ama-voltage aphezulu awenza afaneleke kulezi zinhlelo zokusebenza ezinzima.

Isiphetho

I-GaN yethu ku-Glass 4-Inch Wafers inikezela ngesixazululo esiyingqayizivele nesingenziwa ngendlela oyifisayo sezinhlelo zokusebenza ezihlukahlukene ku-optoelectronics, power electronics, ne-photonics. Ngezinketho ze-glass substrate ezifana ne-JGS1, JGS2, BF33, kanye ne-Ordinary Quartz, lawa mawafa ahlinzeka ngokuguquguquka kuzo zombili izici zemishini nezamehlo, avumela izixazululo eziklanyelwe amandla aphezulu kanye namadivayisi amafrikhwensi aphezulu. Noma ngabe ngama-LED, ama-laser diode, noma izinhlelo zokusebenza ze-RF, amawafa e-GaN-on-glass