Umshini wesikwele wesiteshi esiphindwe kabili i-monocrystalline induku ye-silicon icubungula i-6/8/12 inch surface flatness Ra≤0.5μm

Umshini oyisikwele wesiteshi esiphindwe kabili i-monocrystalline i-silicon rod processing 6/8/12 inch surface flatness Ra≤0.5μm Isithombe Esifakiwe

Incazelo emfushane:

I-Monocrystalline silicon double station station square machine iyisisetshenziswa esisebenzayo sokucutshungulwa kwezinduku ze-silicon ze-monocrystalline (Ingot). Yamukela i-double station synchronous operation design futhi ingasika izinduku ezimbili ze-silicon ngesikhathi esisodwa, ithuthukise kakhulu ukusebenza kahle kokukhiqiza. Idivayisi icubungula izinti ze-silicon eziyisilinda zibe amabhulokhi e-silicon ayisikwele/esikwele (i-Grit) ngobuchwepheshe bokusika intambo yedayimane noma ama-saha ayindilinga angaphakathi, ilungiselela ukusikwa okulandelayo (njengokwenza amawafa e-silicon), futhi isetshenziswa kakhulu kuzixhumanisi zokucubungula impahla ye-silicon ezimbonini ze-photovoltaic neze-semiconductor.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici zesisetshenziswa:

(1) Ukucubungula okuhambisanayo kwesiteshi esikabili
· Ukusebenza kahle okuphindwe kabili: Ukucubungula ngesikhathi esisodwa kwezinduku ezimbili ze-silicon (Ø6"-12") kukhulisa ukukhiqiza ngo-40% -60% uma kuqhathaniswa nemishini ye-Simplex.

· Ukulawula okuzimele: Isiteshi ngasinye singazilungisa ngokuzimela imingcele yokusika (ukushuba, isivinini sokuphakelayo) ukuze sivumelane nezicaciso ezahlukene zenduku ye-silicon.

(2) Ukusika okunembe kakhulu
· Ukunemba kobukhulu: ukubekezelelana kwebanga lebha yesikwele ±0.15mm, ububanzi ≤0.20mm.

· Ikhwalithi yobuso: ukuphuka konqenqema <0.5mm, ukunciphisa inani lokugaya okulandelayo.

(3) Ukulawula okuhlakaniphile
· Ukusika okuguquguqukayo: ukuqapha ngesikhathi sangempela se-silicon rod morphology, ukulungiswa okuguquguqukayo kwendlela yokusika (njengokucubungula induku ye-silicon egobile).

· Ukulandeleka kwedatha: rekhoda amapharamitha wokucubungula wenduku ngayinye ye-silicon ukuze usekele ukudotshwa kwesistimu ye-MES.

(4) Izindleko eziphansi ezisebenzisekayo
· Ukusetshenziswa kwentambo yedayimane: ≤0.06m/mm (ubude benduku ye-silicon), ububanzi bentambo ≤0.30mm.

· Ukujikeleza okupholile: Isistimu yokuhlunga inweba impilo yesevisi futhi inciphise ukulahlwa koketshezi olubi.

Ubuchwepheshe nezinzuzo zentuthuko:

(1) Ukuthuthukiswa kobuchwepheshe bokusika
- Ukusika kwemigqa eminingi: imigqa yedayimane eyi-100-200 isetshenziswa ngokufana, futhi ijubane lokusika liyi-≥40mm/min.

- Ukulawula ukuqina: Isistimu yokulungiswa kwe-loop evaliwe (±1N) ukunciphisa ubungozi bokuphuka kwentambo.

(2) Isandiso sokuhambisana
- Ukuzijwayeza kwezinto: Ukusekela i-P-type/N-type monocrystalline silicon, ehambisana ne-TOPCon, i-HJT nezinye izinduku ze-silicon ezisebenza kahle kakhulu zebhethri.

- Usayizi oguquguqukayo: ubude benduku ye-silicon 100-950mm, ibanga lehlangothi lwenduku yesikwele 166-233mm eliguquguqukayo.

(3) Ukuthuthukiswa okuzenzakalelayo
- Ukulayisha nokulayishwa kwerobhothi: ukulayisha/ukulayishwa okuzenzakalelayo kwezinduku ze-silicon, shaya imizuzu engu-≤3.

- Ukuxilonga okuhlakaniphile: Ukulungiswa okuqagelayo ukuze kuncishiswe isikhathi sokuphumula esingahlelelwe.

(4) Ubuholi bemboni
- Ukusekelwa kwe-wafer: ingacubungula i-silicone engu-≥100μm ezondile kakhulu enezinduku eziyisikwele, izinga lokuhlukana <0.5%.

- Ukuthuthukisa ukusetshenziswa kwamandla: Ukusetshenziswa kwamandla ngeyunithi ngayinye ye-silicon rod kwehliswe ngo-30% (uma kuqhathaniswa nemishini yendabuko).

Imingcele yezobuchwepheshe:

Igama lepharamitha	Inani lenkomba
Inombolo yamabha acutshunguliwe	2 izingcezu/isethi
Icubungula ibanga lobude bebha	100 ~ 950mm
Ububanzi bemajini bomshini	166-233 mm
Ukusika isivinini	≥40mm/min
Isivinini socingo lwedayimane	0~35m/s
Ububanzi bedayimane	0.30 mm noma ngaphansi
Ukusetshenziswa komugqa	0.06 m/mm noma ngaphansi
I-diameter yenduku eyindilinga ehambisanayo	Ububanzi benduku yesikwele eqediwe +2mm, Qinisekisa izinga lokuphasa lokupholisha
Ukulawula ukuphuka konqenqema	I-Raw Edge ≤0.5mm, Akukho ukukhipha, ikhwalithi ephezulu yendawo
Ukufana kobude be-arc	Ibanga lokuqagela <1.5mm, Ngaphandle kokuhlanekezelwa kwenduku ye-silicon
Ubukhulu bomshini (umshini owodwa)	4800×3020×3660mm
Isamba samandla alinganiselwe	56kw
Isisindo esifile semishini	12t

Ithebula lenkomba yokunemba komshini:

Into yokunemba	Ibanga lokubekezelelana
Ukubekezelela kwemajini yebha yesikwele	±0.15mm
Ububanzi bonqenqema lwebha yesikwele	≤0.20mm
I-engeli kuzo zonke izinhlangothi zenduku yesikwele	90°±0.05°
Ukucaba kwenduku yesikwele	≤0.15mm
Ukunemba kokuma okuphindaphindiwe kwerobhothi	±0.05mm

Izinsizakalo ze-XKH:

I-XKH ihlinzeka ngezinsizakalo zomjikelezo ogcwele wemishini ye-mono-crystalline silicon dual-station, okuhlanganisa ukwenza ngokwezifiso okokusebenza (okuhambisana nezinduku ezinkulu ze-silicon), ukugunyazwa kwenqubo (ukwenza kahle ipharamitha), ukuqeqeshwa kokusebenza nokusekelwa kwangemva kokuthengisa (ukunikezwa kwezingxenye ezibalulekile, ukuxilongwa okukude), ukuqinisekisa ukuthi amakhasimende athola isivuno esikhulu (>99%) kanye nokukhiqizwa kwezindleko eziphansi, kanye nokuhlinzeka ngokuthuthukiswa kobuchwepheshe njengama-AI (ukusika). Isikhathi sokulethwa yizinyanga ezingu-2-4.