Ama-Wafers e-SiC angu-8inch angu-200mm angu-4H-N uhlobo lokukhiqiza ibanga lobukhulu obungu-500um

Ama-Wafers e-SiC e-Silicon Carbide angu-8 intshi angu-200mm Uhlobo lwe-4H-N Ibanga lokukhiqiza ubukhulu obungu-500um Isithombe Esifakiwe

Incazelo emfushane:

I-Shanghai Xinkehui Tech. Co., Ltd inikeza ukukhetha okuhle kakhulu kanye namanani ama-wafer e-silicon carbide asezingeni eliphezulu kanye nama-substrate afinyelela ku-8inch ububanzi anezinhlobo ze-N- kanye nezinhlobo ze-semi-insulating. Izinkampani ezincane nezinkulu zamadivayisi e-semiconductor kanye nama-lab ocwaningo emhlabeni wonke zisebenzisa futhi zithembele kuma-wafer ethu e-silicone carbide.

Sithumelele i-imeyili

Izici

Ukucaciswa kwe-Substrate ye-SiC engu-200mm engu-8inch

Usayizi: 8inch;

Ububanzi: 200mm±0.2;

Ubukhulu: 500um±25;

Ukuma Komphezulu: 4 kuya ku-[11-20]±0.5°;

Ukuqondiswa kwe-notch:[1-100]±1°；

Ukujula kwe-notch: 1±0.25mm；

Ipayipi elincane: <1cm2;

Amapuleti e-Hex: Awekho Avunyelwe;

Ukumelana: 0.015~0.028Ω;

I-EPD:<8000cm2;

I-TED: <6000cm2

I-BPD:<2000cm2

I-TSD:<1000cm2

SF: indawo<1%

I-TTV≤15um；

I-Warp≤40um；

Umnsalo ≤25um ；

Izindawo ze-Poly: ≤5%;

Ukuklwebheka: <5 kanye nobude obuhlanganisiwe < 1 Ububanzi be-Wafer;

Ama-Chips/Indents: Akukho okuvumela ububanzi nobubanzi obungu-D>0.5mm;

Imifantu: Akukho;

Ibala: Akukho

Umphetho we-Wafer: I-Chamfer;

Ukuphela kobuso: I-Double Side Polish, i-Si Face CMP;

Ukupakisha: Ikhasethi ye-Multi-wafer noma i-Single Wafer Container;

Ubunzima bamanje ekulungiseleleni amakristalu angu-200mm 4H-SiC mainl

1) Ukulungiswa kwamakristalu embewu angu-200mm 4H-SiC asezingeni eliphezulu;

2) Ukulawulwa kwenqubo yokushisa okukhulu kwensimu yobukhulu obufanayo kanye nenqubo ye-nucleation;

3) Ukusebenza kahle kwezokuthutha kanye nokuguquka kwezingxenye zegesi ezinhlelweni zokukhula kwekristalu enkulu;

4) Ukuqhekeka kwamakristalu kanye nokwanda kwamaphutha okubangelwa ukwanda kokucindezeleka kokushisa okukhulu.

Ukuze kunqotshwe lezi zinselele futhi kutholakale ama-wafer e-SiC angu-200mm asezingeni eliphezulu, kuphakanyiswa izixazululo:

Ngokuphathelene nokulungiswa kwekristalu yembewu engu-200mm, insimu yokugeleza kwensimu efanele yokushisa, kanye nokuhlanganiswa okwandayo kwafundwa futhi kwaklanywa ukuze kucatshangelwe ikhwalithi yekristalu kanye nosayizi okhulayo; Ukuqala ngekristalu engu-150mm SiC se:d, yenza ukuphindaphinda kwekristalu yembewu ukuze wandise kancane kancane ikristalu yeSiC kuze kube yilapho ifinyelela ku-200mm; Ngokukhula kwekristalu okuningi kanye nenqubo, kancane kancane thuthukisa ikhwalithi yekristalu endaweni ekhula ngekristalu, futhi uthuthukise ikhwalithi yamakristalu embewu angu-200mm.

Ngokuphathelene nokulungiswa kwekristalu eqhubayo engu-200mm kanye ne-substrate, ucwaningo luye lwathuthukisa ukwakheka kwensimu ye-feld kanye ne-flow field yokukhula kwekristalu enkulu, lwaqhuba ukukhula kwekristalu eqhubayo engu-200mm, kanye nokulawula ukufana kwe-doping. Ngemva kokucubungula nokubumba ikristalu, kwatholakala ingot engu-8-inch eqhubayo kagesi engu-4H-SiC enobubanzi obujwayelekile. Ngemva kokusika, ukugaya, ukupholisha, ukucubungula ukuthola ama-wafer e-SiC angu-200mm anobukhulu obungu-525um noma ngaphezulu.