I-wafer ye-substrate ye-HPSI SiC engu-6 intshi I-Silicon Carbide Ama-wafer e-SiC ahlambalaza kancane

Izindlela zamanje zokukhula kwekristalu elilodwa le-SiC zifaka phakathi lezi ezintathu ezilandelayo: indlela yesigaba soketshezi, indlela yokubeka umhwamuko wamakhemikhali okushisa okuphezulu, kanye nendlela yokuthutha isigaba somhwamuko womzimba (i-PVT). Phakathi kwazo, indlela ye-PVT iwubuchwepheshe obucwaningwe kakhulu futhi obuvuthiwe bokukhula kwekristalu elilodwa le-SiC, futhi ubunzima bayo bobuchwepheshe yile:

(1) Ikristalu elilodwa le-SiC ekushiseni okuphezulu okungu-2300 ° C ngaphezu kwegumbi le-graphite elivaliwe ukuze kuqedwe inqubo yokuguqulwa kwe-"solid-gas-solid", umjikelezo wokukhula mude, kunzima ukuwulawula, futhi uthambekele kuma-microtubules, ukufakwa kanye nezinye iziphambeko.

(2) Ikristalu elilodwa le-silicon carbide, elihlanganisa izinhlobo ezingaphezu kuka-200 zekristalu ezahlukene, kodwa ukukhiqizwa kohlobo olulodwa lwekristalu olujwayelekile, kulula ukukhiqiza ukuguqulwa kohlobo lwekristalu enqubweni yokukhula okuholela ekufakweni kwezinhlobo eziningi, inqubo yokulungiselela uhlobo olulodwa lwekristalu oluthile kunzima ukulawula ukuzinza kwenqubo, isibonelo, isisekelo samanje sohlobo lwe-4H.

(3) Insimu yokushisa yokukhula kwekristalu eyodwa ye-silicon carbide inokwehluka kwezinga lokushisa, okuholela enkambisweni yokukhula kwekristalu kuba nokucindezeleka kwangaphakathi kwendabuko kanye nokuhlukana okubangelwayo, amaphutha kanye nezinye iziphambeko.

(4) Inqubo yokukhula kwekristalu elilodwa le-silicon carbide idinga ukulawula ngokuqinile ukungeniswa kokungcola kwangaphandle, ukuze kutholakale ikristalu elivikelayo elihlanzekile kakhulu noma ikristalu elihambisayo eliqondiswe ngqo. Kuma-substrate e-silicon carbide avikelayo asetshenziswa kumadivayisi e-RF, izakhiwo zikagesi zidinga ukufezwa ngokulawula ukugcwala okuphansi kakhulu kokungcola kanye nezinhlobo ezithile zeziphambeko zamaphuzu kukristalu.