I-Substrate Ehlanganisiwe Ye-SiC Engamasentimitha angu-6 Ububanzi obungu-4H 150mm Ra≤0.2nm I-Warp≤35μm

I-Substrate Ehlanganisiwe Engu-6 intshi Engu-4H Ububanzi 150mm Ra≤0.2nm I-Warp≤35μm Isithombe Esifakiwe

Incazelo emfushane:

Iqhutshwa ukuphishekela kwemboni ye-semiconductor ukusebenza okuphezulu kanye nezindleko eziphansi, i-substrate ye-SiC ehlanganisiwe engu-6-intshi ivele. Ngobuchwepheshe obusha bezinto ezihlanganisiwe, le wafer engu-6-intshi ifinyelela ku-85% wokusebenza kwama-wafer endabuko angu-8-intshi ngenkathi ibiza u-60% kuphela. Amadivayisi kagesi kuzinhlelo zokusebenza zansuku zonke njengeziteshi zokushaja izimoto zamandla amasha, amamojula wamandla esiteshi sesisekelo se-5G, kanye nama-drive e-variable-frequency kumishini yasekhaya ye-premium kungenzeka ukuthi asevele esebenzisa ama-substrate alolu hlobo. Ubuchwepheshe bethu bokukhula kwe-epitaxial obunezingqimba eziningi obunelungelo lobunikazi buvumela ama-interface e-flat composite asezingeni le-atomic ezisekelweni ze-SiC, ngobuningi besimo se-interface ngaphansi kuka-1×10¹¹/cm²·eV – incazelo efinyelele amazinga ahamba phambili emhlabeni jikelele.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Izinto	Ukukhiqizwaibanga	Isiwulaibanga
Ububanzi	Amasentimitha angu-6-8	Amasentimitha angu-6-8
Ubukhulu	350/500±25.0 μm	350/500±25.0 μm
Uhlobo lwe-Polytype	4H	4H
Ukumelana	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
I-TTV	≤5 μm	≤20 μm
I-Warp	≤35 μm	≤55 μm
Ubulukhuni bangaphambili (ubuso be-Si-face)	I-Ra≤0.2 nm (5μm×5μm)	I-Ra≤0.2 nm (5μm×5μm)

Izici Eziyinhloko

1. Inzuzo Yezindleko: I-substrate yethu ye-SiC ehlanganisiwe engu-6-intshi isebenzisa ubuchwepheshe obukhethekile "be-graded buffer layer" obuthuthukisa ukwakheka kwezinto ukuze kuncishiswe izindleko zezinto zokusetshenziswa ngo-38% ngenkathi kugcinwa ukusebenza kahle kukagesi. Izilinganiso zangempela zibonisa ukuthi amadivayisi angu-650V MOSFET asebenzisa le substrate athola ukwehla okungu-42% kwezindleko ngeyunithi ngayinye uma kuqhathaniswa nezixazululo ezivamile, okubalulekile ekukhuthazeni ukwamukelwa kwedivayisi ye-SiC kuma-electronics abathengi.
2. Izakhiwo Ezinhle Zokuqhuba: Ngezinqubo zokulawula i-nitrogen doping ezinembile, i-substrate yethu ye-SiC ehlanganisiwe engu-6-intshi ifinyelela ukumelana okuphansi kakhulu okungu-0.012-0.022Ω·cm, ngokuguquguquka okulawulwa ngaphakathi kuka-±5%. Okuphawulekayo ukuthi sigcina ukufana kokumelana ngisho nangaphakathi kwesifunda somphetho ongu-5mm we-wafer, sixazulula inkinga yomphumela womphetho osekunesikhathi eside embonini.
3. Ukusebenza Kokushisa: Imojula engu-1200V/50A ethuthukiswe kusetshenziswa i-substrate yethu ibonisa ukuphakama kwezinga lokushisa elingu-45℃ kuphela ngaphezu kwe-ambient lapho kusebenza ngokugcwele umthwalo - 65℃ ngaphansi kwamadivayisi asekelwe ku-silicon afanayo. Lokhu kunikwe amandla yisakhiwo sethu esihlanganisiwe "sesiteshi sokushisa se-3D" esithuthukisa ukuhanjiswa kokushisa okusemaceleni ku-380W/m·K kanye nokuhanjiswa kokushisa okuqondile ku-290W/m·K.
4. Ukuhambisana Nenqubo: Ukuze kube nesakhiwo esiyingqayizivele sama-substrate e-SiC ahlanganisiwe angu-6-intshi, sithuthukise inqubo yokusika i-laser eqondile efinyelela isivinini sokusika esingu-200mm/s ngenkathi silawula ukuqhekeka komphetho ngaphansi kuka-0.3μm. Ngaphezu kwalokho, sinikeza izinketho ze-substrate ezenziwe nge-nickel ezivumela ukubopha okuqondile, okusindisa amakhasimende izinyathelo ezimbili zenqubo.

Izinhlelo Eziyinhloko

Imishini Ebalulekile Yegridi Ehlakaniphile:

Ezinhlelweni zokudlulisa amandla kagesi aqondile (UHVDC) asebenza ku-±800kV, amadivayisi e-IGCT asebenzisa ama-substrate ethu e-SiC ahlanganisiwe angu-6-intshi abonisa ukuthuthukiswa kokusebenza okumangalisayo. Lawa madivayisi afinyelela ukwehla okungu-55% ekulahlekelweni kokushintsha ngesikhathi sezinqubo zokushintsha, ngenkathi ekhulisa ukusebenza kahle kwesistimu yonke ukuze kudlule u-99.2%. Ukuqhuba okuphezulu kokushisa kwama-substrate (380W/m·K) kwenza imiklamo ye-converter ehlanganisiwe inciphise umthelela wesiteshi esincane ngo-25% uma kuqhathaniswa nezixazululo ezivamile ezisekelwe ku-silicon.

Izitimela Zamandla Ezintsha Zezimoto:

Uhlelo lokushayela oluhlanganisa ama-substrate ethu e-SiC ahlanganisiwe angu-6-intshi lufinyelela amandla e-inverter angakaze abonwe angama-45kW/L - ukuthuthuka okungu-60% kunomklamo walo wangaphambilini osekelwe ku-silicon ongu-400V. Okuhlaba umxhwele kakhulu ukuthi uhlelo lugcina ukusebenza kahle okungu-98% kulo lonke izinga lokushisa lokusebenza kusukela ku--40℃ kuya ku-+175℃, okuxazulula izinselelo zokusebenza kwesimo sezulu esibandayo eziye zahlupha ukusetshenziswa kwe-EV ezindaweni ezisenyakatho. Ukuhlolwa kwangempela kubonisa ukwanda okungu-7.5% kobubanzi basebusika bezimoto ezihlonyiswe ngalobu buchwepheshe.

Ama-Drive Frequency Drives Aguquguqukayo Ezimboni:

Ukwamukelwa kwezingxenye zethu ezisetshenziswayo kumamojula wamandla ahlakaniphile (ama-IPM) ezinhlelweni ze-servo zezimboni kuguqula ukuzenzekela kokukhiqiza. Ezikhungweni zomshini we-CNC, lawa mamojula aletha impendulo yemoto esheshayo engu-40% (kunciphisa isikhathi sokusheshisa kusuka ku-50ms kuya ku-30ms) ngenkathi kunciphisa umsindo we-electromagnetic ngo-15dB kuya ku-65dB(A).

Izinto zikagesi zabathengi:

Uguquko lwe-elekthronikhi lwabathengi luyaqhubeka nge-substrates zethu ezivumela amashaja asheshayo esizukulwane esilandelayo e-65W GaN. Lawa ma-adaptha amandla amancane afinyelela ekunciphiseni kwevolumu okungu-30% (kuze kufike ku-45cm³) ngenkathi egcina amandla aphelele, ngenxa yezici zokushintsha ezisezingeni eliphezulu zemiklamo esekelwe ku-SiC. Izithombe ezishisayo zibonisa amazinga okushisa aphezulu angama-68°C kuphela ngesikhathi sokusebenza okuqhubekayo - kupholile ngo-22°C kunemiklamo evamile - kuthuthukisa kakhulu isikhathi sokuphila komkhiqizo kanye nokuphepha.

Izinsizakalo Zokwenza Ngokwezifiso ze-XKH

I-XKH inikeza ukwesekwa okuphelele kokwenza ngokwezifiso kwezingxenye ze-SiC ezihlanganisiwe ezingamasentimitha angu-6:

Ukwenza Ngokwezifiso Ukujiya: Izinketho ezifaka imininingwane engu-200μm, 300μm, kanye no-350μm
2. Ukulawula Ukumelana: Ukuhlushwa kwe-doping yohlobo lwe-n okulungisekayo kusuka ku-1×10¹⁸ kuya ku-5×10¹⁸ cm⁻³

3. Ukuqondiswa Kwekristalu: Ukusekelwa kokuqondiswa okuningana okuhlanganisa (0001) okungaxhunyiwe ku-axis 4° noma 8°

4. Izinsizakalo Zokuhlola: Imibiko ephelele yokuhlola ipharamitha yezinga le-wafer

Isikhathi sethu samanje sokuhola kusukela ekukhiqizeni amaphrothoyipi kuya ekukhiqizweni okukhulu singaba sifushane njengezinsuku eziyi-8. Kumakhasimende ahlakaniphile, sinikeza izinsizakalo zokuthuthukisa izinqubo ezizinikele ukuqinisekisa ukuhambisana okuphelele nezidingo zedivayisi.