I-Silicon Carbide engu-4H-SiC engu-6 inches, i-Dummy Grade

Incazelo emfushane:

I-Silicon Carbide (SiC) iguqula imboni ye-semiconductor, ikakhulukazi ezinhlelweni zamandla aphezulu, ezivame kakhulu, kanye nezingamelani nemisebe. I-ingot engu-6-intshi engu-4H-SiC engama-intshi angu-6, enikezwa ngebanga eliyi-dummy, iyinto ebalulekile yokwenza i-prototyping, ucwaningo, kanye nezinqubo zokulinganisa. Njengoba ine-bandgap ebanzi, ukuhanjiswa kokushisa okuhle kakhulu, kanye nokuqina komshini, le ingot isebenza njengenketho engabizi kakhulu yokuhlola nokwenza ngcono izinqubo ngaphandle kokubeka engcupheni ikhwalithi eyisisekelo edingekayo ekuthuthukisweni okuthuthukile. Lo mkhiqizo unakekela izinhlelo zokusebenza ezahlukahlukene, kufaka phakathi ama-electronics anamandla, amadivayisi e-radio-frequency (RF), kanye nama-optoelectronics, okwenza kube ithuluzi elibalulekile embonini nasezikhungweni zocwaningo.

Sithumelele i-imeyili

Izici

Izakhiwo

1. Izakhiwo Ezibonakalayo Nezakhiwe
●Uhlobo Lwezinto: I-Silicon Carbide (i-SiC)
●Uhlobo lwe-polytype: 4H-SiC, isakhiwo sekristalu esinama-hexagonal
●Ububanzi: 6 amayintshi (150 mm)
●Ubukhulu: Kungalungiselelwa (5-15 mm ejwayelekile yebanga eliyindida)
●Ukuma kwekristalu:
oIsisekelo: [0001] (i-C-plane)
oIzinketho zesibili: I-Off-axis 4° yokukhula kwe-epitaxial okulungiselelwe
●Ukuma Okuyisisekelo Okuyisicaba: (10-10) ± 5°
●Ukuma Kwesibili Okuyisicaba: 90° ngokuphambene newashi ukusuka efulethini eliyinhloko ± 5°

2. Izakhiwo Zikagesi
●Ukumelana:
o I-Semi-insulation (>106^66 Ω·cm), ilungele ukunciphisa amandla e-parasitic.
●Uhlobo Lokusebenzisa Izidakamizwa:
oKufakwe i-doped ngamabomu, okuholela ekumelaneni nogesi okuphezulu kanye nokuqina ngaphansi kwezimo ezahlukahlukene zokusebenza.

3. Izakhiwo Zokushisa
●Ukusebenza Kokushisa: 3.5-4.9 W/cm·K, okuvumela ukushabalaliswa kokushisa okuphumelelayo ezinhlelweni zamandla aphezulu.
●Isilinganiso Sokwanda Kokushisa: 4.2×10−64.2 \izikhathi 10^{-6}4.2×10−6/K, okuqinisekisa ukuzinza kobukhulu ngesikhathi sokucubungula izinga lokushisa eliphezulu.

4. Izakhiwo Zokubona
●Isikhala sebhendi: Isikhala sebhendi esibanzi esingu-3.26 eV, esivumela ukusebenza ngaphansi kwama-voltage aphezulu kanye namazinga okushisa.
●Ukucaca: Ukucaca okuphezulu kuma-UV nama-wavelength abonakalayo, okuwusizo ekuhlolweni kwe-optoelectronic.

5. Izakhiwo Zemishini
●Ubulukhuni: Isikali se-Mohs singu-9, silandela idayimane kuphela, siqinisekisa ukuqina ngesikhathi sokucubungula.
●Ubuningi obuphelele besici:
o Ilawulwa ngamaphutha amancane kakhulu, iqinisekisa ikhwalithi eyanele yezinhlelo zokusebenza ze-dummy-grade.
●Ukuthamba: Ukufana nokuphambuka

Ipharamitha	Imininingwane	Iyunithi
Ibanga	Ibanga Eliyimbumbulu
Ububanzi	150.0 ± 0.5	mm
Ukuqondiswa kwe-Wafer	I-On-axis: <0001> ± 0.5°	izinga
Ukumelana Nogesi	> 1E5	Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba	{10-10} ± 5.0°	izinga
Ubude Obuphansi Obuyinhloko	I-Notch
Imifantu (Ukuhlolwa Kokukhanya Okunamandla Aphezulu)	< 3 mm ku-radial	mm
Amapuleti e-Hex (Ukuhlolwa Kokukhanya Okunamandla Aphezulu)	Indawo eqongelelekayo ≤ 5%	%
Izindawo ze-Polytype (Ukuhlolwa Kokukhanya Okunamandla Aphezulu)	Indawo eqongelelekayo ≤ 10%	%
Ubuningi be-Micropipe	< 50	cm−2^-2−2
Ukuqhekeka Komphetho	Kuvunyelwe okungu-3, ngakunye okungu-≤ 3 mm	mm
Inothi	Ubukhulu be-wafer yokusika < 1 mm, > 70% (ngaphandle kweziphetho ezimbili) ihlangabezana nezidingo ezingenhla

Izicelo

1. Ukuhlola kanye Nocwaningo
Ingot engu-6-intshi engu-4H-SiC engama-dummy-grade iyinto efanelekile yokwenza amaphrothokholi nocwaningo, okuvumela abakhiqizi kanye nama-laboratory ukuthi:
●Hlola amapharamitha enqubo ku-Chemical Vapor Deposition (CVD) noma i-Physical Vapor Deposition (PVD).
●Thuthukisa futhi uthuthukise amasu okuqopha, ukupholisha, kanye nokusika ama-wafer.
●Hlola imiklamo emisha yamadivayisi ngaphambi kokushintshela ezintweni ezisezingeni lokukhiqiza.

2. Ukulinganisa Nokuhlola Idivayisi
Izakhiwo zokuvikela kancane zenza lokhu kube usizo kakhulu:
●Ukuhlola nokulinganisa izakhiwo zikagesi zamadivayisi anamandla aphezulu kanye namadivayisi asebenzisa imvamisa ephezulu.
●Ukulingisa izimo zokusebenza zama-MOSFET, ama-IGBT, noma ama-diode ezindaweni zokuhlola.
●Isebenza njengendawo engabizi kakhulu yokufaka izinto ezihlanzekile kakhulu ngesikhathi sokuthuthukiswa kwesigaba sokuqala.

3. Amandla kagesi
Ukushisa okuphezulu kanye nezici ze-bandgap ebanzi ze-4H-SiC kuvumela ukusebenza kahle kuma-electronics kagesi, okuhlanganisa:
●Izinto zikagesi ezinamandla aphezulu.
●Ama-inverter ezimoto zikagesi (i-EV).
●Izinhlelo zamandla avuselelekayo, njengeziguquli zelanga kanye nama-wind turbine.

4. Izicelo ze-Radio Frequency (RF)
Ukulahlekelwa okuphansi kwe-dielectric kwe-4H-SiC kanye nokuhamba okuphezulu kwama-electron kwenza ifaneleke ku:
●Ama-amplifiers e-RF nama-transistors engqalasizinda yokuxhumana.
●Izinhlelo ze-radar ezisebenza ngesivinini esiphezulu zezinhlelo zokusebenza zezindiza nezokuvikela.
●Izingxenye zenethiwekhi engenantambo zobuchwepheshe obusha be-5G.

5. Amadivayisi Amelana Nemisebe
Ngenxa yokumelana kwayo ngokwemvelo nezinkinga ezibangelwa imisebe, i-4H-SiC evikela kancane ilungele:
●Imishini yokuhlola izikhala, okuhlanganisa izinto zikagesi zesathelayithi kanye nezinhlelo zamandla.
●Izinto zikagesi eziqiniswe ngemisebe ukuze kuqashwe futhi kulawulwe i-nuclear.
●Izinhlelo zokuzivikela ezidinga ukuqina ezindaweni ezibucayi kakhulu.

6. Optoelectronics
Ukucaca okubonakalayo kanye ne-bandgap ebanzi ye-4H-SiC kwenza ukusetshenziswa kwayo ku:
●Izitholi ze-UV kanye nama-LED anamandla amakhulu.
●Ukuhlola ukumbozwa kokukhanya kanye nokwelashwa kobuso.
●Izingxenye ezibonakalayo ze-prototyping zezinzwa ezithuthukisiwe.

Izinzuzo Zezinto Eziyi-Dummy-Grade

Ukusebenza Kahle Kwezindleko:
Ibanga eliyimbumbulu liyindlela engabizi kakhulu kunezinto zocwaningo noma zezinga lokukhiqiza, okwenza kube kuhle kakhulu ekuhlolweni okuvamile kanye nokulungiswa kwenqubo.

Ukwenziwa ngokwezifiso:
Ubukhulu obulungisekayo kanye nokuqondiswa kwekristalu kuqinisekisa ukuhambisana nezinhlelo zokusebenza eziningi.

Ukukwazi ukukhula:
Ububanzi obuyi-intshi eziyi-6 buhambisana nezindinganiso zemboni, okuvumela ukukala okungenamthungo ezinqubweni zezinga lokukhiqiza.

Ukuqina:
Amandla aphezulu okusebenza kanye nokuqina kokushisa kwenza i-ingot iqine futhi ithembeke ngaphansi kwezimo ezahlukahlukene zokuhlola.

Ukuguquguquka:
Ifanele izimboni eziningi, kusukela ezinhlelweni zamandla kuya kwezokuxhumana kanye ne-optoelectronics.

Isiphetho

I-ingot engu-6-intshi ye-Silicon Carbide (4H-SiC) engama-intshi angu-6, ibanga eliyi-dummy, inikeza ipulatifomu ethembekile neguquguqukayo yocwaningo, i-prototyping, kanye nokuhlola emikhakheni yobuchwepheshe obusezingeni eliphezulu. Izakhiwo zayo ezihlukile zokushisa, zikagesi, nezomshini, kuhlanganiswe nokuthengeka kanye nokukwazi ukwenza ngezifiso, kuyenza ibe yinto ebalulekile kokubili kwezemfundo kanye nasembonini. Kusukela ku-elekthronikhi yamandla kuya ezinhlelweni ze-RF kanye namadivayisi aqiniswe ngemisebe, le ingot isekela ukusungula izinto ezintsha kuzo zonke izigaba zentuthuko.
Ukuze uthole imininingwane eningiliziwe noma ucele ikhotheshini, sicela usithinte ngqo. Ithimba lethu lobuchwepheshe likulungele ukusiza ngezixazululo ezenzelwe wena ukuze kuhlangatshezwane nezidingo zakho.