6 ku-Silicon Carbide 4H-SiC Semi-Insulating Ingot, i-Dummy Grade

6 ku-Silicon Carbide 4H-SiC Semi-Insulating Ingot, Isithombe Esifakiwe Sebanga Le-Dummy

Incazelo emfushane:

I-Silicon Carbide (SiC) yenza izinguquko embonini ye-semiconductor, ikakhulukazi emandleni aphezulu, ama-high-frequency, kanye nezinhlelo zokusebenza ezimelana nemisebe. Ingot engu-6-inch 4H-SiC semi-insulating, enikezwa ngebanga le-dummy, iyinto ebalulekile ye-prototyping, ucwaningo, nezinqubo zokulinganisa. Nge-bandgap ebanzi, i-thermal conductivity enhle kakhulu, nokuqina kwemishini, le ingot isebenza njengenketho engabizi kakhulu yokuhlola nokwenza ukucubungula ngokugcwele ngaphandle kokubeka engcupheni ikhwalithi eyisisekelo edingekayo ekuthuthukisweni okuthuthukile. Lo mkhiqizo ubhekelela ukusetshenziswa okuhlukahlukene, okuhlanganisa amandla kagesi, amadivaysi erediyo-frequency (RF), kanye ne-optoelectronics, okuwenza ube ithuluzi eliyigugu lemboni nezikhungo zocwaningo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

1. Izakhiwo zePhysical and Structural
● Uhlobo Lwezinto: I-Silicon Carbide (SiC)
● I-Polytype: 4H-SiC, isakhiwo sekristalu esiyi-hexagonal
● Ububanzi: 6 amayintshi (150 mm)
● Ubukhulu: Kuyalungiseka (5-15 mm okuvamile ebangeni le-dummy)
● I-Crystal Orientation:
oPrimary: [0001] (C-plane)
oOkukhethwa kukho kwesibili: I-off-axis 4° yokukhula okuthuthukisiwe kwe-epitaxial
●I-Primary Flat Orientation: (10-10) ± 5°
●I-Flat Orientation yesibili: 90° ngokuphikisana newashi ukusuka efulethini eliyinhloko ± 5°

2. Izakhiwo zikagesi
●Ukumelana:
I-oSemi-insulating (>106^66 Ω·cm), ilungele ukunciphisa amandla e-parasitic.
● Uhlobo lwe-Doping:
I-oDoped ngokungenhloso, okuholela ekuqineni kukagesi okuphezulu nokuzinza ngaphansi kwezimo eziningi zokusebenza.

3. Izakhiwo ezishisayo
●I-Thermal Conductivity: 3.5-4.9 W/cm·K, inika amandla ukulahlwa kokushisa okusebenzayo kumasistimu anamandla amakhulu.
● I-Thermal Expansion Coefficient: 4.2×10−64.2 \izikhathi ezingu-10^{-6}4.2×10−6/K, iqinisekisa ukuzinza kwe-dimensional ngesikhathi sokucubungula izinga lokushisa eliphezulu.

4. Izakhiwo ze-Optical
● I-Bandgap: I-bandgap ebanzi engu-3.26 eV, evumela ukusebenza ngaphansi komthamo ophezulu kanye namazinga okushisa.
●Ukubonisa ngale: Ukukhanya okuphezulu ku-UV namaza amaza abonakalayo, kuwusizo ekuhlolweni kwe-optoelectronic.

5. Izakhiwo Zemishini
● Ukuqina: Isilinganiso se-Mohs 9, isibili ngemva kwedayimane, siqinisekisa ukuqina ngesikhathi sokucubungula.
●Ukuminyana Kwesici:
oKulawulwa ukukhubazeka okuncane, iqinisekisa ikhwalithi eyanele yezinhlelo zokusebenza ze-dummy-grade.
● Ukucaba: Ukufana nokuchezuka

Ipharamitha	Imininingwane	Iyunithi
Ibanga	Dummy Grade
Ububanzi	150.0 ± 0.5	mm
I-Wafer Orientation	Ku-eksisi: <0001> ± 0.5°	iziqu
Ukungazweli Kagesi	> 1e5	Ω·cm
Isisekelo se-Flat Orientation	{10-10} ± 5.0°	iziqu
Ubude Befulethi obuyisisekelo	Inothi
Imifantu (Ukuhlolwa Kokukhanya Okuqine Kakhulu)	< 3 mm ku-radial	mm
I-Hex Plates (Ukuhlolwa Kokukhanya Okuqine Kakhulu)	Indawo eqoqiwe ≤ 5%	%
Izindawo ze-Polytype (Ukuhlolwa Kokukhanya Okunamandla Kakhulu)	Indawo eqoqiwe ≤ 10%	%
I-Micropipe Density	<50	cm−2^-2−2
I-Edge Chipping	3 okuvunyelwe, ngakunye ≤ 3 mm	mm
Qaphela	Ugqinsi lwe-wafer yokusika i-< 1 mm, > 70% (ngaphandle kwamaphethelo amabili) luhlangabezana nezidingo ezingenhla

Izinhlelo zokusebenza

1. I-Prototyping Nocwaningo
I-dummy-grade 6-inch 4H-SiC ingot iyinto efanelekile yokwenza i-prototyping nokucwaninga, evumela abakhiqizi namalabhorethri ukuthi:
● Hlola amapharamitha wenqubo kuChemical Vapor Deposition (CVD) noma Physical Vapor Deposition (PVD).
●Thuthukisa futhi wenze ngcono amasu e-etching, polishing, kanye ne-wafer slicing.
●Hlola imiklamo emisha yedivayisi ngaphambi kokushintshela kokubalulekile kwebanga lokukhiqiza.

2. Ukulinganiswa Kwedivayisi Nokuhlola
Izakhiwo ze-semi-insulating zenza le ingot ibaluleke kakhulu kulokhu:
●Ukuhlola kanye nokulinganisa izici zikagesi zamandla aphezulu kanye namadivayisi anemvamisa ephezulu.
●Ukulinganisa izimo zokusebenza zama-MOSFET, ama-IGBT, noma ama-diode ezindaweni zokuhlola.
●Isebenza njengento engabizi kakhulu esikhundleni sama-substrates anobumsulwa obukhulu ngesikhathi sokuthuthukiswa kwesigaba sangaphambi kwesikhathi.

3. Amandla kagesi
I-thermal conductivity ephezulu kanye nezici ze-bandgap ezibanzi ze-4H-SiC zinika amandla ukusebenza kahle kuma-electronics amandla, okuhlanganisa:
●Amandla kagesi aphezulu.
●Ama-inverter emoto kagesi (EV).
● Amasistimu wamandla avuselelekayo, njengama-solar inverter nama-wind turbines.

4. Izinhlelo zokusebenza zeRadio Frequency (RF).
Ukulahleka kwe-4H-SiC okuphansi kwe-dielectric kanye nokuhamba kwe-electron ephezulu kuyenza ifanelekele:
● Ama-amplifiers e-RF nama-transistors kungqalasizinda yezokuxhumana.
●Amasistimu e-radar emvamisa ephezulu yezinhlelo ze-aerospace nezokuvikela.
●Izingxenye zenethiwekhi ezingenantambo zobuchwepheshe obusafufusa be-5G.

5. Amadivayisi Angazweli Emisebeni
Ngenxa yokumelana ngokwemvelo nokukhubazeka okubangelwa imisebe, i-semi-insulating 4H-SiC ilungele:
●Impahla yokuhlola indawo, okuhlanganisa ugesi wesathelayithi namasistimu kagesi.
● Ama-electronics aqiniswe ngemisebe ukuze aqaphe futhi alawule.
●Izinhlelo zokusebenza zokuvikela ezidinga ukuqina ezindaweni ezibucayi.

6. Optoelectronics
I-optical transparency kanye ne-bandgap ebanzi ye-4H-SiC yenza ukusetshenziswa kwayo ku:
●Ama-photodetectors e-UV nama-LED anamandla amakhulu.
● Ukuhlola okokunamathela optical kanye nokwelashwa kwendawo.
●I-Prototyping yezingxenye ezibonakalayo zezinzwa ezithuthukisiwe.

Izinzuzo ze-Dummy-Grade Material

Ukusebenza Kwezindleko:
Ibanga le-dummy liyindlela engabizi kakhulu yocwaningo noma yebanga lokukhiqiza, okulenza libe lilungele ukuhlolwa okujwayelekile kanye nokucwengwa kwenqubo.

Ukwenza ngokwezifiso:
Ubukhulu obulungisekayo nokuma kwekristalu kuqinisekisa ukuhambisana nezinhlobonhlobo zezinhlelo zokusebenza.

I-Scalability:
Ububanzi obungu-6-intshi buhambisana namazinga omkhakha, okuvumela ukukala okungenamthungo ezinqubweni zebanga lokukhiqiza.

Ukuqina:
Amandla aphezulu emishini nokuzinza kokushisa kwenza ingot iqine futhi ithembeke ngaphansi kwezimo zokuhlola ezihlukahlukene.

Ukuhlukahluka:
Ifanele izimboni eziningi, kusukela ezinhlelweni zamandla kuya kwezokuxhumana kanye ne-optoelectronics.

Isiphetho

I-6-inch Silicon Carbide (4H-SiC) semi-insulating ingot, ibanga le-dummy, inikeza inkundla ethembekile neguquguqukayo yocwaningo, i-prototyping, nokuhlola emikhakheni yobuchwepheshe esezingeni eliphezulu. Izakhiwo zayo ezishisayo ezishisayo, zikagesi, nezomshini, kuhlanganiswe nokufinyeleleka nokwenziwa ngendlela oyifisayo, kuyenza ibe yinto ebaluleke kakhulu kuzo zombili izifundiswa nezimboni. Kusukela kuma-electronics wamandla kuya kumasistimu e-RF namadivayisi aqiniswe yimisebe, le ingot isekela ukuqamba izinto ezintsha kuzo zonke izigaba zokuthuthuka.
Ukuze uthole imininingwane eyengeziwe noma ukucela ikhotheshini, sicela usithinte ngokuqondile. Ithimba lethu lezobuchwepheshe likulungele ukusiza ngezixazululo ezifanelana nezimfuneko zakho.