I-silicon wafer engu-4 intshi FZ CZ N-Type DSP noma i-SSP Test grade

Incazelo emfushane:

I-silicon wafer iyishidi elincane elisikwe nge-silicon eyodwa yekristalu. Ama-silicon wafer atholakala ngobubanzi obungu-2 intshi, 3 intshi, 4 intshi, 6 intshi, kanye no-8 intshi, futhi asetshenziswa kakhulu ukukhiqiza amasekethe ahlanganisiwe. Ama-silicon wafer ayizinto zokusetshenziswa kuphela kanti ama-chips angumkhiqizo oqediwe. Ama-silicon wafer ayizinto ezibalulekile zokwenza amasekethe ahlanganisiwe, futhi amadivayisi ahlukahlukene e-semiconductor angenziwa nge-photolithography kanye nokufakelwa kwama-ion kuma-silicon wafer.


Izici

Ukwethulwa kwebhokisi le-wafer

Ama-wafer e-silicon ayingxenye ebalulekile yomkhakha wezobuchwepheshe okhulayo namuhla. Imakethe yezinto ze-semiconductor idinga ama-wafer e-silicon anemininingwane eqondile ukuze akhiqize inani elikhulu lamadivayisi amasha esekethe ahlanganisiwe. Siyaqaphela ukuthi njengoba izindleko zokukhiqiza ama-semiconductor zanda, nezindleko zalezo zinto zokukhiqiza ziyanda, njenge-wafer ye-silicon. Siyaqonda ukubaluleka kwekhwalithi nokusebenza kahle kwezindleko emikhiqizweni esiyinikeza amakhasimende ethu. Sinikeza ama-wafer angabizi kakhulu futhi anekhwalithi efanayo. Ngokuyinhloko sikhiqiza ama-wafer e-silicon nama-ingots (CZ), ama-wafer epitaxial, nama-wafer e-SOI.

Ububanzi Ububanzi Kupholishiwe I-Doped Ukuqondiswa Ukumelana/Ω.cm Ubukhulu/um
2intshi 50.8±0.5mm I-SSP
I-DSP
I-P/N 100 1-20 200-500
3intshi 76.2±0.5mm I-SSP
I-DSP
I-P/B 100 NA 525±20
4intshi
101.6±0.2
101.6±0.3
101.6±0.4
I-SSP
I-DSP
I-P/N 100 0.001-10 200-2000
6intshi
152.5±0.3 I-SSPI-DSP I-P/N 100 1-10 500-650
8intshi
200±0.3 I-DSPI-SSP I-P/N 100 0.1-20 625

Ukusetshenziswa kwama-wafer e-silicon

I-substrate: I-PECVD/LPCVD coating, i-magnetron sputtering

I-Substrate: I-XRD, i-SEM, i-atomic force infrared spectroscopy, i-transmission electron microscopy, i-fluorescence spectroscopy kanye nezinye izivivinyo zokuhlaziya, ukukhula kwe-molecular beam epitaxial, ukuhlaziywa kwe-X-ray kokucutshungulwa kwe-crystal microstructure: ukuqopha, ukubopha, amadivayisi e-MEMS, amadivayisi kagesi, amadivayisi e-MOS kanye nokunye ukucutshungulwa

Kusukela ngo-2010, iShanghai XKH Material Tech. Co., Ltd izibophezele ekuhlinzekeni amakhasimende ngezixazululo eziphelele ze-Silicon Wafer ezingama-intshi angu-4, kusukela ku-wafers ezisezingeni lokulungisa amaphutha ku-Dummy Wafer, i-test wafers ezisezingeni lokuhlola ku-Test Wafer, kuya ku-wafers ezisezingeni lomkhiqizo ku-Prime Wafer, kanye nama-wafers akhethekile, ama-wafers e-Oxide Oxide, ama-wafers e-Nitride Si3N4, ama-wafers afakwe i-aluminium, ama-wafers e-silicon afakwe ithusi, i-SOI Wafer, i-MEMS Glass, ama-wafers aqine kakhulu futhi acwebezelayo, njll., anobukhulu obusukela ku-50mm-300mm, futhi singahlinzeka ngama-wafers e-semiconductor ngokupholisha okunezinhlangothi ezimbili/ezimbili, ukuncibilikisa, ukunquma, i-MEMS kanye nezinye izinsizakalo zokucubungula nokwenza ngokwezifiso.

Umdwebo Oningiliziwe

I-IMG_1605 (2)
IMG_1605 (1)

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