4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga leDummy Grade
4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lepharamitha evamile
6 intshi ububanzi Silicon Carbide (SiC) Substrate Ukucaciswa
Ibanga | Zero MPD ProductionIbanga (Z Ibanga) | Ukukhiqizwa OkujwayelekileIbanga (P Ibanga) | Dummy Grade (D Ibanga) | ||
Ububanzi | 145.5 mm~150.0 mm | ||||
Ubukhulu | 350 μm ± 25 μm | ||||
I-Wafer Orientation | -Offi-eksisi: 2.0°-4.0° ukuya [1120] ± 0.5° ku-4H/6H-P, Ku-eksisi:〈111〉± 0.5° ku-3C-N | ||||
I-Micropipe Density | 0 cm-2 | ||||
Ukungazweli | p-uhlobo 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
n-uhlobo 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
Isisekelo se-Flat Orientation | 4H/6H-P | -{1010} ± 5.0° | |||
3C-N | -{110} ± 5.0° | ||||
Ubude Befulethi obuyisisekelo | 32.5 mm ± 2.0 mm | ||||
Ubude Befulethi besibili | 18.0 mm ± 2.0 mm | ||||
I-Flat Orientation yesibili | I-silicon ibheke phezulu: 90° CW. kusuka kuPrime flat ± 5.0° | ||||
Ukukhishwa komkhawulo | 3 mm | 6 mm | |||
LTV/TTV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
Ubulukhuni | I-Polish Ra≤1 nm | ||||
I-CMP Ra≤0.2 nm | I-Ra≤0.5 nm | ||||
I-Edge Cracks By High Intensity Light | Lutho | Ubude obuqongelelwayo ≤ 10 mm, ubude obubodwa≤2 mm | |||
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu | Indawo eqoqiwe ≤0.05% | Indawo eqoqiwe ≤0.1% | |||
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Lutho | Indawo eqoqiwe≤3% | |||
I-Visual Carbon Inclusions | Indawo eqoqiwe ≤0.05% | Indawo eqoqiwe ≤3% | |||
I-Silicon Surface Scratches By High Intensity Light | Lutho | Ubude obuqongelelwayo≤1× ububanzi bewafa | |||
Ama-Edge Chips Aphakeme Ngokukhanya Okunamandla | Akukho okuvunyelwe ≥0.2mm ububanzi nokujula | 5 okuvunyelwe, ≤1 mm ngakunye | |||
I-Silicon Surface Contamination By High Intensity | Lutho | ||||
Ukupakisha | I-Multi-wafer Cassette noma Isiqukathi Esiyisicwecwana Esisodwa |
Amanothi:
※ Imikhawulo yokukhubazeka isebenza kuyo yonke indawo eyisicwecwana ngaphandle kwendawo engabaliwe enqenqemeni. # Imihuzuko kufanele ibhekwe ku-Si face o
I-4H/6H-P yohlobo lwe-wafer ye-SiC engu-6 intshi enezinga le-Zero MPD kanye nokukhiqizwa noma ibanga le-dummy isetshenziswa kabanzi ezinhlelweni ezithuthukisiwe ze-elekthronikhi. I-thermal conductivity yayo enhle kakhulu, i-voltage ephezulu yokuwohloka, kanye nokumelana nezindawo ezinokhahlo kuyenza ifaneleke kugesi wamandla, njengamaswishi ane-voltage ephezulu nama-inverter. Ibanga le-Zero MPD liqinisekisa amaphutha amancane, abalulekile kumadivayisi athembeke kakhulu. Amawafa ebanga lokukhiqiza asetshenziswa ekukhiqizweni kwemishini emikhulu kagesi nasezinhlelweni ze-RF, lapho ukusebenza nokunemba kubalulekile khona. Ngakolunye uhlangothi, amawafa e-Dummy-grade, asetshenziselwa ukulinganisa inqubo, ukuhlolwa kwemishini, kanye ne-prototyping, okuvumela ukulawulwa kwekhwalithi okungaguquki ezindaweni zokukhiqiza ze-semiconductor.
Izinzuzo ze-N-type SiC composite substrates zihlanganisa
- High Thermal Conductivity: Iwafa ye-SiC engu-4H/6H-P ihlakaza kahle ukushisa, iyenze ifanelekele izinga lokushisa eliphezulu kanye nezinhlelo zokusebenza ze-elekthronikhi ezinamandla amakhulu.
- High Breakdown Voltage: Ikhono layo lokusingatha ama-voltage aphezulu ngaphandle kokwehluleka liyenza ifaneleke kuma-electronics amandla kanye nezinhlelo zokusebenza zokushintsha amandla kagesi aphezulu.
- I-Zero MPD (Iphutha Lepayipi Elincane) Ibanga: Ukuminyana kokukhubazeka okuncane kuqinisekisa ukwethembeka nokusebenza okuphezulu, okubalulekile ekufuneni izinto zikagesi.
- Production-Grade for Mass Manufacturing: Ifanele ukukhiqizwa kwezinga elikhulu kwamadivayisi e-semiconductor asebenza kahle anamazinga ekhwalithi aqinile.
- I-Dummy-Grade Yokuhlola Nokulinganisa: Inika amandla ukulungiselelwa kwenqubo, ukuhlolwa kwemishini, nokwenza i-prototyping ngaphandle kokusebenzisa amawafa ebanga lokukhiqiza abiza kakhulu.
Sekukonke, amawafa e-SiC angu-4H/6H-P 6-inch anebanga le-Zero MPD, ibanga lokukhiqiza, kanye nebanga le-dummy anikeza izinzuzo ezibalulekile zokuthuthukiswa kwamadivayisi kagesi asebenza kahle kakhulu. Lawa mawafa anenzuzo ikakhulukazi ezinhlelweni ezidinga ukusebenza kwezinga lokushisa eliphezulu, ukuminyana kwamandla aphezulu, nokuguqulwa kwamandla okusebenzayo. Ibanga le-Zero MPD liqinisekisa ukukhubazeka okuncane kokusebenza kwedivayisi okuthembekile nezinzile, kuyilapho amawafa ebanga lokukhiqiza asekela ukukhiqizwa kwesilinganiso esikhulu ngezilawuli zekhwalithi eziqinile. Amawafa e-Dummy-grade ahlinzeka ngesixazululo esingabizi kakhulu sokwenza inqubo ibe ngcono kanye nokulinganiswa kwemishini, okuyenza ibaluleke kakhulu ekwenzeni isemiconductor enembayo ephezulu.