4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga leDummy Grade

4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga Dummy Ibanga Isithombe Esifakiwe

Incazelo emfushane:

I-4H/6H-P yohlobo lwe-SiC wafer engu-6-intshi iwumsebenzi wesemiconductor osetshenziswa ekwenziweni kwemishini kagesi, eyaziwa ngokuguquguquka kwayo okuhle kakhulu kwe-thermal, i-high breakdown voltage, kanye nokumelana nezinga lokushisa eliphezulu nokugqwala. Ibanga lokukhiqiza kanye nebanga le-Zero MPD (I-Micro Pipe Defect) liqinisekisa ukwethembeka nokuzinza kwamandla kagesi asebenza kakhulu. Amawafa ebanga lokukhiqiza asetshenziselwa ukukhiqiza idivayisi enkulu enokulawulwa kwekhwalithi okuqinile, kuyilapho amawafa ebanga le-dummy asetshenziselwa ngokuyinhloko ukulungisa iphutha nokuhlola okokusebenza. Izici ezivelele ze-SiC ziyenza isetshenziswe kabanzi emazingeni okushisa aphezulu, amandla kagesi aphezulu, kanye namadivayisi kagesi ahamba ngamaza aphezulu, njengamadivayisi kagesi namadivayisi e-RF.

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Omaka bomkhiqizo

4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lepharamitha evamile

6 intshi ububanzi Silicon Carbide (SiC) Substrate Ukucaciswa

Ibanga			Zero MPD ProductionIbanga (Z Ibanga)	Ukukhiqizwa OkujwayelekileIbanga (P Ibanga)	Dummy Grade (D Ibanga)
Ububanzi			145.5 mm~150.0 mm
Ubukhulu			350 μm ± 25 μm
I-Wafer Orientation			-Offi-eksisi: 2.0°-4.0° ukuya [1120] ± 0.5° ku-4H/6H-P, Ku-eksisi:〈111〉± 0.5° ku-3C-N
I-Micropipe Density			0 cm-2
Ukungazweli	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Isisekelo se-Flat Orientation		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Ubude Befulethi obuyisisekelo			32.5 mm ± 2.0 mm
Ubude Befulethi besibili			18.0 mm ± 2.0 mm
I-Flat Orientation yesibili			I-silicon ibheke phezulu: 90° CW. kusuka kuPrime flat ± 5.0°
Ukukhishwa komkhawulo			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni			I-Polish Ra≤1 nm
			I-CMP Ra≤0.2 nm		I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light			Lutho		Ubude obuqongelelwayo ≤ 10 mm, ubude obubodwa≤2 mm
I-Hex Plates Ngokukhanya Okunamandla Okuphezulu			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu			Lutho		Indawo eqoqiwe≤3%
I-Visual Carbon Inclusions			Indawo eqoqiwe ≤0.05%		Indawo eqoqiwe ≤3%
I-Silicon Surface Scratches By High Intensity Light			Lutho		Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Aphakeme Ngokukhanya Okunamandla			Akukho okuvunyelwe ≥0.2mm ububanzi nokujula		5 okuvunyelwe, ≤1 mm ngakunye
I-Silicon Surface Contamination By High Intensity			Lutho
Ukupakisha			I-Multi-wafer Cassette noma Isiqukathi Esiyisicwecwana Esisodwa

Amanothi:

※ Imikhawulo yokukhubazeka isebenza kuyo yonke indawo eyisicwecwana ngaphandle kwendawo engabaliwe enqenqemeni. # Imihuzuko kufanele ibhekwe ku-Si face o

I-4H/6H-P yohlobo lwe-wafer ye-SiC engu-6 intshi enezinga le-Zero MPD kanye nokukhiqizwa noma ibanga le-dummy isetshenziswa kabanzi ezinhlelweni ezithuthukisiwe ze-elekthronikhi. I-thermal conductivity yayo enhle kakhulu, i-voltage ephezulu yokuwohloka, kanye nokumelana nezindawo ezinokhahlo kuyenza ifaneleke kugesi wamandla, njengamaswishi ane-voltage ephezulu nama-inverter. Ibanga le-Zero MPD liqinisekisa amaphutha amancane, abalulekile kumadivayisi athembeke kakhulu. Amawafa ebanga lokukhiqiza asetshenziswa ekukhiqizweni kwemishini emikhulu kagesi nasezinhlelweni ze-RF, lapho ukusebenza nokunemba kubalulekile khona. Ngakolunye uhlangothi, amawafa e-Dummy-grade, asetshenziselwa ukulinganisa inqubo, ukuhlolwa kwemishini, kanye ne-prototyping, okuvumela ukulawulwa kwekhwalithi okungaguquki ezindaweni zokukhiqiza ze-semiconductor.

Izinzuzo ze-N-type SiC composite substrates zihlanganisa

High Thermal Conductivity: Iwafa ye-SiC engu-4H/6H-P ihlakaza kahle ukushisa, iyenze ifanelekele izinga lokushisa eliphezulu kanye nezinhlelo zokusebenza ze-elekthronikhi ezinamandla amakhulu.
High Breakdown Voltage: Ikhono layo lokusingatha ama-voltage aphezulu ngaphandle kokwehluleka liyenza ifaneleke kuma-electronics amandla kanye nezinhlelo zokusebenza zokushintsha amandla kagesi aphezulu.
I-Zero MPD (Iphutha Lepayipi Elincane) Ibanga: Ukuminyana kokukhubazeka okuncane kuqinisekisa ukwethembeka nokusebenza okuphezulu, okubalulekile ekufuneni izinto zikagesi.
Production-Grade for Mass Manufacturing: Ifanele ukukhiqizwa kwezinga elikhulu kwamadivayisi e-semiconductor asebenza kahle anamazinga ekhwalithi aqinile.
I-Dummy-Grade Yokuhlola Nokulinganisa: Inika amandla ukulungiselelwa kwenqubo, ukuhlolwa kwemishini, nokwenza i-prototyping ngaphandle kokusebenzisa amawafa ebanga lokukhiqiza abiza kakhulu.

Sekukonke, amawafa e-SiC angu-4H/6H-P 6-inch anebanga le-Zero MPD, ibanga lokukhiqiza, kanye nebanga le-dummy anikeza izinzuzo ezibalulekile zokuthuthukiswa kwamadivayisi kagesi asebenza kahle kakhulu. Lawa mawafa anenzuzo ikakhulukazi ezinhlelweni ezidinga ukusebenza kwezinga lokushisa eliphezulu, ukuminyana kwamandla aphezulu, nokuguqulwa kwamandla okusebenzayo. Ibanga le-Zero MPD liqinisekisa ukukhubazeka okuncane kokusebenza kwedivayisi okuthembekile nezinzile, kuyilapho amawafa ebanga lokukhiqiza asekela ukukhiqizwa kwesilinganiso esikhulu ngezilawuli zekhwalithi eziqinile. Amawafa e-Dummy-grade ahlinzeka ngesixazululo esingabizi kakhulu sokwenza inqubo ibe ngcono kanye nokulinganiswa kwemishini, okuyenza ibaluleke kakhulu ekwenzeni isemiconductor enembayo ephezulu.