I-wafer ye-SiC engu-4H/6H-P engu-6inch grade Zero MPD grade Production Grade Dummy Grade
I-4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lamapharamitha avamile
6 I-substrate ye-Silicon Carbide (SiC) ububanzi be-intshi Imininingwane
| Ibanga | Ukukhiqizwa kwe-MPD okungekhoIbanga (Z) Ibanga) | Ukukhiqizwa OkujwayelekileIbanga (P) Ibanga) | Ibanga Eliyimbumbulu (D Ibanga) | ||
| Ububanzi | 145.5 mm ~ 150.0 mm | ||||
| Ubukhulu | 350 μm ± 25 μm | ||||
| Ukuqondiswa kwe-Wafer | -Offi-axis: 2.0°-4.0°ukuya ku-[1120] ± 0.5° ye-4H/6H-P, Ku-axis:〈111〉± 0.5° ye-3C-N | ||||
| Ubuningi be-Micropipe | 0 cm-2 | ||||
| Ukumelana | uhlobo lwe-p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| uhlobo lwe-n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Ukuqondiswa Okuyisisekelo Okuyisicaba | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Ubude Obuphansi Obuyinhloko | 32.5 mm ± 2.0 mm | ||||
| Ubude Besibili Obuyisicaba | 18.0 mm ± 2.0 mm | ||||
| Ukuqondiswa Kwesibili Okuyisicaba | I-silicon ibheke phezulu: 90° CW. kusuka ku-Prime flat ± 5.0° | ||||
| Ukukhishwa Komphetho | 3 mm | 6 mm | |||
| I-LTV/TTV/Umnsalo/I-Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Ubulukhuni | I-Polish Ra≤1 nm | ||||
| I-CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu | Akukho | Ubude obuhlanganisiwe ≤ 10 mm, ubude obubodwa ≤2 mm | |||
| Amapuleti e-Hex Ngokukhanya Okuphezulu | Indawo eqongelelayo ≤0.05% | Indawo ehlanganisiwe ≤0.1% | |||
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Akukho | Indawo eqongelelekayo ≤3% | |||
| Ukufakwa kwekhabhoni ebonakalayo | Indawo eqongelelayo ≤0.05% | Indawo eqongelelayo ≤3% | |||
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | Akukho | Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer | |||
| Ama-Edge Chips Aphezulu Ngokukhanya Okunamandla | Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm | 5 kuvunyelwe, ≤1 mm ngayinye | |||
| Ukungcoliswa Komphezulu We-Silicon Ngu-High Intensity | Akukho | ||||
| Ukupakisha | Ikhasethi ye-Multi-wafer noma i-Single Wafer | ||||
Amanothi:
※ Imikhawulo yamaphutha isebenza kuyo yonke indawo ye-wafer ngaphandle kwendawo engafakwanga emaphethelweni. # Imihuzuko kufanele ihlolwe ebusweni be-Si o
I-wafer ye-SiC yohlobo lwe-4H/6H-P engu-6-intshi enebanga le-Zero MPD kanye nebanga lokukhiqiza noma le-dummy isetshenziswa kabanzi ezinhlelweni zokusebenza ze-elekthronikhi ezithuthukisiwe. Ukushisa kwayo okuhle kakhulu, i-voltage ephezulu yokuqhekeka, kanye nokumelana nezimo ezinzima kwenza kube kuhle kakhulu kuma-electronics kagesi, njengezishintshi ze-voltage ephezulu kanye nama-inverter. Ibanga le-Zero MPD liqinisekisa amaphutha amancane, abalulekile kumadivayisi athembekile kakhulu. Ama-wafer ebanga lokukhiqiza asetshenziswa ekukhiqizweni okukhulu kwamadivayisi kagesi kanye nezinhlelo zokusebenza ze-RF, lapho ukusebenza nokunemba kubalulekile khona. Ama-wafer ebanga le-dummy, ngakolunye uhlangothi, asetshenziselwa ukulinganisa inqubo, ukuhlolwa kwemishini, kanye nokwenza amaphrothotayipi, okuvumela ukulawulwa kwekhwalithi okuqhubekayo ezindaweni zokukhiqiza ze-semiconductor.
Izinzuzo ze-substrates ze-N-type SiC ezihlanganisiwe zifaka phakathi
- Ukushisa Okuphezulu Kokushisa: I-wafer ye-4H/6H-P SiC isusa ukushisa ngempumelelo, okwenza ifaneleke ukusetshenziswa kwe-elekthronikhi okushisa okuphezulu kanye namandla aphezulu.
- I-Voltage Ephezulu Yokuqhekeka: Ikhono layo lokusingatha ama-voltage aphezulu ngaphandle kokwehluleka lenza libe yindawo ekahle kakhulu kuma-electronics anamandla kanye nezinhlelo zokusebenza zokushintsha ama-voltage aphezulu.
- Ibanga le-Zero MPD (Micro Pipe Defect): Ubuningi obuncane bokukhubazeka buqinisekisa ukuthembeka nokusebenza okuphezulu, okubaluleke kakhulu kumadivayisi kagesi adinga amandla.
- Izinga Lokukhiqiza Lokukhiqiza Okukhulu: Ifanele ukukhiqizwa okukhulu kwamadivayisi e-semiconductor asebenza kahle kakhulu anezindinganiso zekhwalithi eziqinile.
- Ibanga Eliyindilinga Lokuhlola Nokulinganisa: Ivumela ukwenziwa ngcono kwenqubo, ukuhlolwa kwemishini, kanye nokwenza amaphrothotayipi ngaphandle kokusebenzisa ama-wafer asezingeni lokukhiqiza abiza kakhulu.
Sekukonke, ama-wafer e-SiC angu-4H/6H-P angu-6-intshi anebanga le-Zero MPD, ibanga lokukhiqiza, kanye nebanga le-dummy anikeza izinzuzo ezibalulekile ekuthuthukisweni kwamadivayisi kagesi asebenza kahle kakhulu. Lawa ma-wafer awusizo kakhulu ezinhlelweni zokusebenza ezidinga ukusebenza kwezinga lokushisa eliphezulu, ubuningi bamandla aphezulu, kanye nokuguqulwa kwamandla okuphumelelayo. Ibanga le-Zero MPD liqinisekisa amaphutha amancane ekusebenzeni kwedivayisi okuthembekile nokuzinzile, kuyilapho ama-wafer ebanga lokukhiqiza esekela ukukhiqizwa okukhulu ngokulawula ikhwalithi okuqinile. Ama-wafer ebanga le-dummy ahlinzeka ngesisombululo esingabizi kakhulu sokwenza ngcono inqubo kanye nokulinganiswa kwemishini, okwenza kube yinto ebalulekile ekwenziweni kwe-semiconductor okunembe kakhulu.
Umdwebo Oningiliziwe
