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I-wafer ye-substrate ye-SiC engu-4H-semi HPSI engu-2inch Production Dummy Research grade

I-wafer ye-substrate ye-SiC engu-4H-semi HPSI engu-2inch Production Dummy Research grade Isithombe Esifakiwe
  • I-wafer ye-substrate ye-SiC engu-4H-semi HPSI engu-2inch Production Dummy Research grade

Incazelo emfushane:

I-wafer ye-silicon carbide eyodwa ye-2inch substrate ye-wafer iyinto esebenza kahle kakhulu enezakhiwo zomzimba nezamakhemikhali ezivelele. Yenziwe ngezinto ze-silicon carbide eyodwa ye-crystal ehlanzekile kakhulu enokushisa okuhle kakhulu, ukuzinza kwemishini kanye nokumelana nokushisa okuphezulu. Ngenxa yenqubo yayo yokulungiselela enembile kakhulu kanye nezinto ezisezingeni eliphezulu, le chip ingenye yezinto ezikhethwayo zokulungiselela amadivayisi kagesi asebenza kahle kakhulu emikhakheni eminingi.


Izici

Ama-wafer e-SiC avikela kancane i-silicon carbide substrate

I-substrate ye-silicon carbide ihlukaniswe kakhulu ngohlobo oluqhubayo kanye nolungenawo ugesi, i-substrate ye-silicon carbide eqhubayo kuya ku-n-type isetshenziswa kakhulu kumadivayisi e-epitaxial GaN-based LED kanye namanye amadivayisi e-optoelectronic, amadivayisi kagesi asebenzisa amandla asekelwe ku-SiC, njll., kanti i-substrate ye-silicon carbide ye-SiC ehlanganisa ugesi isetshenziswa kakhulu ekukhiqizweni kwe-epitaxial kwamadivayisi e-radio frequency anamandla aphezulu e-GaN. Ngaphezu kwalokho, i-HPSI kanye ne-SI semi-insulation ehlanzekile ephezulu ihlukile, ukuhlushwa kwe-semi-insulation carrier okuhlanzekile okuphezulu kungu-3.5 * 1013 ~ 8 * 1015/cm3 ububanzi, ngokuhamba kwe-electron okuphezulu; i-semi-insulation iyinto yokumelana okuphezulu, ukumelana okuphezulu kakhulu, ngokuvamile isetshenziselwa i-substrate yedivayisi ye-microwave, ayihambisani nogesi.

Ishidi le-SiC eliyi-semi-insulating Silicon Carbide substrate sheet

Isakhiwo sekristalu se-SiC sinquma ukuthi sisebenza kanjani, uma siqhathaniswa ne-Si ne-GaAs, i-SiC inazo izakhiwo zomzimba; ububanzi bebhendi obungavunyelwe bukhulu, bucishe bube kathathu kune-Si, ukuqinisekisa ukuthi idivayisi isebenza emazingeni okushisa aphezulu ngaphansi kokuthembeka kwesikhathi eside; amandla ensimu yokuqhekeka aphezulu, aphindwe ka-1O kune-Si, ukuqinisekisa ukuthi umthamo we-voltage yedivayisi, uthuthukisa inani le-voltage yedivayisi; izinga le-electron lokugcwala likhulu, liphindwe ka-2 kune-Si, ukwandisa imvamisa namandla edivayisi; ukuhanjiswa kokushisa kuphezulu, ngaphezu kwe-Si, ukuhanjiswa kokushisa kuphezulu, ukuhanjiswa kokushisa kuphezulu, ukuhanjiswa kokushisa kuphezulu, ukuhanjiswa kokushisa kuphakeme, ngaphezu kwe-Si, ukuhanjiswa kokushisa kuphakeme, ukuhanjiswa kokushisa kuphakeme. Ukuhanjiswa kokushisa okuphezulu, okuphindwe kathathu kune-Si, kwandisa umthamo wokusabalalisa ukushisa wedivayisi nokuqaphela ukwenziwa kwedivayisi kube kuncane.

Umdwebo Oningiliziwe

I-SiC engu-4H-semi HPSI engu-2inch (1)
I-SiC engu-4H-semi HPSI engu-2inch (2)
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