Ibanga le-4H-semi HPSI 2inch SiC substrate wafer Production Dummy Research grade

I-4H-semi HPSI 2inch SiC substrate wafer Production Ibanga locwaningo lweDummy Isithombe Esifakiwe

Incazelo emfushane:

I-2inch silicon carbide single crystal substrate wafer iyinto esebenza kahle kakhulu enezakhiwo ezibonakalayo namakhemikhali ezivelele. Yenziwe nge-high-purity silicon carbide single crystal material ene-conductivity enhle kakhulu yokushisa, ukuzinza kwemishini kanye nokumelana nokushisa okuphezulu. Ngenxa yenqubo yayo yokulungisa okunembayo kanye nezinto ezisezingeni eliphezulu, le chip ingenye yezinto ezikhethwayo zokulungiswa kwamadivaysi e-elekthronikhi asebenza kahle emikhakheni eminingi.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ama-wafers e-SiC e-Semi-insulating silicon carbide substrate

I-Silicon carbide substrate ihlukaniswe ngokuyinhloko ibe uhlobo lwe-conductive kanye ne-semi-insulating, i-silicon carbide substrate e-conductive ku-n-type substrate isetshenziselwa ikakhulukazi i-epitaxial GaN-based LED namanye amadivaysi e-optoelectronic, ama-SiC-based power electronic devices, njll., kanye ne-semi- insulating SiC silicon carbide substrate isetshenziselwa ikakhulukazi ukukhiqizwa kwe-epitaxial kwamadivayisi we-GaN enamandla amakhulu omsakazo. Ukwengeza i-high-purity semi-insulation HPSI kanye ne-SI semi-insulation ihlukile, i-high-purity semi-insulation carrier concentration ye-3.5 * 1013 ~ 8 * 1015/cm3 ububanzi, nokuhamba kwe-electron ephezulu; I-semi-insulation iyisisetshenziswa esimelana kakhulu, ukumelana kuphezulu kakhulu, ngokuvamile kusetshenziselwa ama-substrates edivayisi ye-microwave, okungeyona e-conductive.

I-Semi-insulating Silicon Carbide substrate sheet ye-SiC wafer

Isakhiwo se-crystal ye-SiC sinquma ngokomzimba, ngokuhlobene ne-Si ne-GaAs, i-SiC inezakhiwo ezibonakalayo; ububanzi bebhendi obunqatshelwe bukhulu, busondele izikhathi ezi-3 kune-Si, ukuqinisekisa ukuthi idivayisi isebenza emazingeni okushisa aphezulu ngaphansi kokuthembeka kwesikhathi eside; ukwephulwa field amandla aphezulu, 1O izikhathi Si, ukuqinisekisa ukuthi umthamo idivayisi voltage, ngcono idivayisi voltage value; isilinganiso se-electron saturation sikhulu, izikhathi ezi-2 kune-Si, ukwandisa imvamisa yedivayisi namandla amakhulu; I-thermal conductivity iphakeme, ingaphezu kwe-Si, i-thermal conductivity iphakeme, i-thermal conductivity iphakeme, i-thermal conductivity iphakeme, i-thermal conductivity iphakeme, ingaphezu kwe-Si, i-conductivity yokushisa iphezulu, i-thermal conductivity iphakeme. I-conductivity ephezulu ye-thermal, izikhathi ezingaphezu kwezingu-3 ze-Si, ikhulisa amandla okukhipha ukushisa kwedivayisi futhi ibona i-miniaturization yedivayisi.