I-4H-N 4 intshi SiC substrate wafer Silicon Carbide Production Dummy Research grade

I-4H-N 4 intshi SiC substrate wafer Ukukhiqizwa kwe-Silicon Carbide Dummy Research grade Isithombe Esifakiwe

Incazelo emfushane:

I-wafer ye-silicon carbide eyodwa ye-substrate engu-4-intshi iyinto esebenza kahle kakhulu enezakhiwo zomzimba nezamakhemikhali ezivelele. Yenziwe ngezinto ze-silicon carbide eyodwa ye-crystal ehlanzekile kakhulu enokushisa okuhle kakhulu, ukuzinza kwemishini kanye nokumelana nokushisa okuphezulu. Ngenxa yenqubo yayo yokulungiselela enembile kakhulu kanye nezinto ezisezingeni eliphezulu, le chip ingenye yezinto ezikhethwayo zokulungiselela amadivayisi kagesi asebenza kahle kakhulu emikhakheni eminingi.

Sithumelele i-imeyili

Izici

Izicelo

Ama-wafer e-silicon carbide single crystal substrate angamasentimitha angu-4 adlala indima ebalulekile emikhakheni eminingi. Okokuqala, asetshenziswa kabanzi embonini ye-semiconductor ekulungiseleleni amadivayisi kagesi anamandla aphezulu njenge-power transistors, amasekethe ahlanganisiwe namamojula kagesi. Ukushisa kwawo okuphezulu kanye nokumelana nokushisa okuphezulu kwenza ukuthi ikwazi ukuqeda ukushisa kangcono futhi inikeze ukusebenza kahle okukhulu kanye nokuthembeka. Okwesibili, ama-wafer e-silicon carbide nawo asetshenziswa emkhakheni wocwaningo ukwenza ucwaningo ngezinto ezintsha namadivayisi. Ngaphezu kwalokho, ama-wafer e-silicon carbide nawo asetshenziswa kabanzi kuma-optoelectronics, njengokwenziwa kwama-LED nama-laser diodes.

Imininingwane ye-wafer ye-SiC engu-4inch

Ububanzi be-wafer ye-silicon carbide eyodwa yekristalu engu-4-intshi engama-intshi angu-4 (cishe u-101.6mm), ukuphela kobuso kufikela ku-Ra < 0.5 nm, ukujiya okungu-600±25 μm. Ukuqhuba kwe-wafer uhlobo lwe-N noma uhlobo lwe-P futhi kungenziwa ngezifiso ngokwezidingo zamakhasimende. Ngaphezu kwalokho, i-chip nayo inokuqina okuhle kakhulu kwemishini, ingamelana nengcindezi ethile kanye nokudlidliza.

I-inch silicon carbide single crystal substrate wafer iyinto esebenza kahle kakhulu esetshenziswa kakhulu emikhakheni ye-semiconductor, ucwaningo kanye ne-optoelectronics. Ine-conductivity enhle kakhulu yokushisa, ukuzinza kwemishini kanye nokumelana nokushisa okuphezulu, okufanelekela ukulungiswa kwamadivayisi kagesi anamandla aphezulu kanye nocwaningo lwezinto ezintsha. Sinikeza izinhlobo ezahlukene zezincazelo kanye nezinketho zokwenza ngokwezifiso ukuze kuhlangatshezwane nezidingo zamakhasimende ezahlukahlukene. Sicela unake isayithi lethu elizimele ukuze ufunde kabanzi mayelana nolwazi lomkhiqizo wama-wafer e-silicon carbide.

Imisebenzi eyinhloko: Ama-wafer e-silicon carbide, ama-wafer e-silicon carbide single crystal substrate, ama-intshi angu-4, ukuhanjiswa kwe-thermal, ukuzinza komshini, ukumelana nokushisa okuphezulu, ama-transistors wamandla, amasekethe ahlanganisiwe, amamojula wamandla, ama-LED, ama-diode e-laser, ukuqeda kwendawo, ukuhanjiswa kwe-conductivity, izinketho ezenziwe ngokwezifiso