I-4H-N 4 intshi ye-SiC substrate wafer Ibanga le-Silicon Carbide Production Dummy Research

I-4H-N 4 intshi ye-SiC substrate wafer I-Silicon Carbide Production Ibanga leDummy Ucwaningo olufakiwe Isithombe Esifakiwe

Incazelo emfushane:

I-4-inch silicon carbide single crystal substrate wafer iyinto esebenza kahle kakhulu enezinto ezibonakalayo namakhemikhali ezivelele. Yenziwe nge-high-purity silicon carbide single crystal material ene-conductivity enhle kakhulu yokushisa, ukuzinza kwemishini kanye nokumelana nokushisa okuphezulu. Ngenxa yenqubo yayo yokulungisa okunembayo kanye nezinto ezisezingeni eliphezulu, le chip ingenye yezinto ezikhethwayo zokulungiswa kwamadivaysi e-elekthronikhi asebenza kahle emikhakheni eminingi.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinhlelo zokusebenza

Ama-4-inch silicon carbide single crystal substrate wafers adlala indima ebalulekile emikhakheni eminingi. Okokuqala, isetshenziswa kabanzi embonini ye-semiconductor ekulungiseleleni amadivaysi e-elekthronikhi anamandla amakhulu njengama-transistors amandla, ama-circuits ahlanganisiwe namamojula wamandla. I-conductivity yayo ephezulu yokushisa kanye nokumelana nokushisa okuphezulu kwenza ikwazi ukukhipha ukushisa kangcono futhi inikeze ukusebenza kahle okukhulu nokuthembeka. Okwesibili, ama-wafers e-silicon carbide nawo asetshenziswa emkhakheni wocwaningo ukwenza ucwaningo ngezinto ezintsha namadivayisi. Ngaphezu kwalokho, ama-wafers e-silicon carbide nawo asetshenziswa kabanzi kuma-optoelectronics, njengokwakhiwa kwama-led nama-laser diode.

Imininingwane ye-4inch SiC wafer

I-silicon carbide eyi-4-inch single crystal substrate wafer ububanzi obungamayintshi angu-4 (cishe u-101.6mm), ingaphezulu iqedwa kufika ku-Ra <0.5 nm, ukujiya okungu-600±25 μm. I-conductivity ye-wafer iwuhlobo lwe-N noma uhlobo lwe-P futhi ingenziwa ngezifiso ngokuya ngezidingo zamakhasimende. Ngaphezu kwalokho, i-chip nayo inokusimama okuhle kakhulu kwemishini, ingamelana nenani elithile lokucindezela nokudlidliza.

I-inch silicon carbide single crystal substrate wafer iyinto esebenza kakhulu esetshenziswa kabanzi kumkhakha we-semiconductor, ucwaningo kanye ne-optoelectronics. Ine-conductivity enhle kakhulu yokushisa, ukuzinza kwemishini kanye nokumelana nokushisa okuphezulu, okulungele ukulungiswa kwamadivaysi kagesi anamandla aphezulu kanye nokucwaninga kwezinto ezintsha. Sinikeza izinhlobonhlobo zokucaciswa kanye nezinketho zokwenza ngokwezifiso ukuhlangabezana nezidingo ezihlukahlukene zamakhasimende. Sicela unake isayithi lethu elizimele ukuze ufunde kabanzi mayelana nolwazi lomkhiqizo wama-silicon carbide wafers.

Imisebenzi esemqoka: Amawafa e-silicon carbide, ama-silicon carbide single crystal substrate wafers, ama-intshi angu-4, ukuqhutshwa kwe-thermal, ukuzinza komshini, ukumelana nezinga lokushisa eliphezulu, ama-transistors amandla, amasekethe ahlanganisiwe, amamojula wamandla, ama-leds, ama-laser diode, ukuqeda phezulu, ukuqhutshwa kwe-conductivity, izinketho ngokwezifiso