Ama-SiC Wafers angu-4 intshi angu-6H aqukethe i-SiC Substrates esezingeni eliphansi, ecwaningwayo, kanye nebanga eliyi-dummy

Ama-SiC Wafers angu-4 intshi angu-6H aqukethe i-SiC Substrates esezingeni eliphansi, ecwaningwayo, nezinga eliyi-dummy Isithombe Esifakiwe

Incazelo emfushane:

I-substrate ye-silicon carbide engangenisi umswakama yakhiwa ngokusika, ukugaya, ukupholisha, ukuhlanza kanye nobunye ubuchwepheshe bokucubungula ngemva kokukhula kwe-silicon carbide crystal engangenisi umswakama. Ingqimba noma ungqimba lwekristalu olunezingqimba eziningi lukhuliswa ku-substrate oluhlangabezana nezidingo zekhwalithi njenge-epitaxy, bese kwenziwa idivayisi ye-microwave RF ngokuhlanganisa umklamo wesekethe kanye nokupakishwa. Itholakala njenge-2inch 3inch 4incgh 6inch 8 intshi yezimboni, ucwaningo kanye nokuhlolwa kwe-semi-insulated silicon carbide single crystal substrates.

Sithumelele i-imeyili

Izici

Ukucaciswa Komkhiqizo

Ibanga			Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z)			Ibanga Lokukhiqiza Elijwayelekile (Ibanga le-P)		Ibanga Eliyimbumbulu (Ibanga D)
Ububanzi			99.5 mm~100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Ukuqondiswa kwe-Wafer			I-axis evaliwe: 4.0° ibheke ku-< 1120 > ± 0.5° ye-4H-N, I-axis evuliwe: <0001>± 0.5° ye-4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba		{10-10} ±5.0°
Ubude Obuphansi Obuyinhloko		32.5 mm±2.0 mm
Ubude Besibili Obuyisicaba		18.0 mm±2.0 mm
Ukuqondiswa Kwesibili Okuyisicaba		I-silicon ibheke phezulu: 90° CW. kusuka ku-Prime flat ±5.0°
Ukukhishwa Komphetho		3 mm
I-LTV/TTV/Umnsalo/I-Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni			Ubuso buka-C				IsiPolish		I-Ra≤1 nm
			Ubuso bukaSi	I-CMP	Ra≤0.2 nm					Ra≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu		Akukho						Ubude obuhlanganisiwe ≤ 10 mm, obubodwa ubude ≤2 mm
Amapuleti e-Hex Ngokukhanya Okuphezulu		Indawo eqongelelayo ≤0.05%						Indawo ehlanganisiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu		Akukho						Indawo eqongelelekayo ≤3%
Ukufakwa kwekhabhoni ebonakalayo		Indawo eqongelelayo ≤0.05%						Indawo eqongelelayo ≤3%
Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu		Akukho						Ubude obuhlanganisiwe ≤1 * ububanzi be-wafer
Ama-Edge Chips Aphezulu Ngokukhanya Okunamandla		Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2 mm						5 kuvunyelwe, ≤1 mm ngayinye
Ukungcoliswa Komphezulu We-Silicon Ngu-High Intensity		Akukho
Ukupakisha		Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili