I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga

I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Ephucuzeke Kabili Eqhuba Ibanga Le-Mos Ibanga Isithombe Esifakiwe

Incazelo emfushane:

I-6H n-type Silicon Carbide (SiC) i-single-crystal substrate iyinto ebalulekile ye-semiconductor esetshenziswa kakhulu ku-high-high, i-high-frequency, kanye ne-high-temperature electronic applications. Idume ngesakhiwo sayo sekristalu eyi-hexagonal, i-6H-N SiC inikeza i-bandgap ebanzi kanye ne-thermal conductivity ephezulu, okuyenza ilungele izindawo ezifunayo.
Ukuwohloka okuphezulu kwenkambu kagesi yale nto kanye nokuhamba kwama-electron kunika amandla ukuthuthukiswa kwamandla kagesi asebenzayo, njengama-MOSFET nama-IGBT, angasebenza ngamavolthemu aphezulu namazinga okushisa kunalawo enziwe nge-silicon yendabuko. I-thermal conductivity yayo enhle kakhulu iqinisekisa ukuchithwa kokushisa okuphumelelayo, okubalulekile ekugcineni ukusebenza nokuthembeka ezinhlelweni zokusebenza zamandla aphezulu.
Kuzinhlelo zokusebenza ze-radiofrequency (RF), izici ze-6H-N SiC zisekela ukwakhiwa kwamadivayisi akwazi ukusebenza kumaza aphezulu ngokusebenza okuthuthukisiwe. Ukuzinza kwawo kwamakhemikhali nokumelana nemisebe nakho kuyenza ifanelekele ukusetshenziswa ezindaweni ezinokhahlo, okuhlanganisa imikhakha ye-aerospace neyokuvikela.
Ngaphezu kwalokho, ama-substrates e-6H-N SiC abalulekile kumadivayisi e-optoelectronic, njengama-photodetectors e-ultraviolet, lapho i-bandgap yawo ebanzi ivumela ukutholwa kokukhanya kwe-UV okuphumelelayo. Inhlanganisela yalezi zakhiwo yenza i-6H n-type SiC ibe yinto eguquguqukayo nebaluleke kakhulu ekuthuthukiseni ubuchwepheshe besimanje be-elekthronikhi kanye ne-optoelectronic.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Okulandelayo yizici ze-silicon carbide wafer:

· Igama lomkhiqizo: I-SiC Substrate
· Ukwakheka kwe-Hexagonal: Izakhiwo zikagesi ezihlukile.
· High Electron Mobility: ~600 cm²/V·s.
· Ukuzinza Kwamakhemikhali: Imelana nokugqwala.
· Ukumelana Nemisebe: Ifanele izindawo ezinokhahlo.
· I-Low Intrinsic Carrier Concentration: Isebenza kahle emazingeni okushisa aphezulu.
· Ukuqina: Izakhiwo eziqinile zemishini.
· Amandla e-Optoelectronic: Ukutholwa kokukhanya kwe-UV okusebenzayo.

I-Silicon carbide wafer inezinhlelo zokusebenza eziningana

Izicelo ze-SiC wafer:
Ama-substrates e-SiC (Silicon Carbide) asetshenziswa ezinhlelweni zokusebenza ezahlukahlukene ngenxa yezakhiwo zawo ezihlukile ezifana ne-thermal conductivity ephezulu, amandla aphezulu kagesi, kanye ne-bandgap ebanzi. Nazi ezinye izinhlelo zokusebenza:

1.Amandla kagesi:
·Ama-MOSFET ane-voltage ephezulu
·IGBTs (I-Insulated Gate Bipolar Transistors)
·Schottky diodes
·Iziguquli zamandla

2.Amadivayisi Asebenza Kakhulu:
Ama-amplifiers e-RF (Radio Frequency).
·Ama-Microwave transistors
·Amadivayisi we-Millimeter-wave

3.I-High-Temperature Electronics:
·Izinzwa namasekhethi ezindawo ezinokhahlo
·Aerospace electronics
·Automotive electronics (isb, amayunithi okulawula injini)

4.Optoelectronics:
·Ama-photodetectors e-Ultraviolet (UV).
·Ama-diode akhipha ukukhanya (ama-LED)
·Laser diodes

5.Amasistimu Amandla Avuselelekayo:
·Iziguquli zelanga
· Iziguquli ze-turbine yomoya
·Izitimela zemoto kagesi

6.Izimboni Nokuvikela:
·Amasistimu erada
·Ukuxhumana ngesathelayithi
·Izinsimbi ze-nuclear reactor

Ukwenza ngokwezifiso i-SiC wafer

Singakwazi ukwenza ngokwezifiso usayizi we-SiC substrate ukuze uhlangabezane nezidingo zakho ezithile. Siphinde sinikeze ngewafa ye-4H-Semi HPSI SiC enosayizi ongu-10x10mm noma 5x5 mm.
Intengo inqunywa icala, futhi imininingwane yokupakisha ingenziwa ngendlela oyifisayo.
Isikhathi sokulethwa siphakathi kwamaviki angu-2-4. Samukela inkokhelo nge-T/T.
Ifektri yethu inemishini yokukhiqiza ethuthukisiwe nethimba lezobuchwepheshe, elingakwazi ukwenza ngokwezifiso ukucaciswa okuhlukahlukene, ubukhulu kanye nokwakheka kwe-SiC wafer ngokuya ngezidingo eziqondile zamakhasimende.