Ucwaningo Lokukhiqiza Lwezinhlobo Ezimbili Eziyi-2inch 50.8mm Ze-Silicon Carbide SiC Wafers Ezine-Doped Si N kanye ne-Dummy grade

Izinto ezingaphansi komhlaba: i-4H silicon carbide (4H-SiC)

Isakhiwo sekristalu: i-tetrahexahedral (4H)

Ukuphuza utshwala: Akunawo udosi (4H-N)

Usayizi: 2 amayintshi

Uhlobo lokuqhuba: Uhlobo lwe-N (olufakwe i-n)

Ukuqhuba: I-Semiconductor

Umbono Wemakethe: Ama-wafer e-SiC angafakwanga i-4H-N anezinzuzo eziningi, njengokuqhuba okuphezulu kokushisa, ukulahlekelwa okuphansi kokuqhuba, ukumelana nokushisa okuphezulu, kanye nokuqina okuphezulu kwemishini, ngakho-ke anombono obanzi wemakethe ku-elekthronikhi yamandla kanye nezinhlelo zokusebenza ze-RF. Ngokuthuthuka kwamandla avuselelekayo, izimoto zikagesi kanye nokuxhumana, kunesidingo esikhulayo samadivayisi asebenza kahle kakhulu, ukusebenza kwezinga lokushisa eliphezulu kanye nokubekezelela amandla aphezulu, okunikeza ithuba elibanzi lemakethe lama-wafer e-SiC angafakwanga i-4H-N.

Ukusetshenziswa: Ama-wafer e-SiC angafakwanga i-4H-N angamasentimitha angu-2 angasetshenziswa ukwakha izinhlobo ezahlukene ze-elekthronikhi zamandla kanye namadivayisi e-RF, okuhlanganisa kodwa kungagcini lapho:

Ama-MOSFET angu-1--4H-SiC: Ama-transistor e-metal oxide semiconductor field effect ezinhlelo zokusebenza zamandla aphezulu/zokushisa okuphezulu. Lawa madivayisi anokulahlekelwa okuphansi kokuqhuba kanye nokushintsha ukuze anikeze ukusebenza kahle kanye nokuthembeka okuphezulu.

Ama-JFET angu-2--4H-SiC: Ama-FET e-Junction e-RF power amplifier kanye nezinhlelo zokusebenza zokushintsha. Lawa madivayisi anikeza ukusebenza kwemvamisa ephezulu kanye nokuqina okuphezulu kokushisa.

Ama-Diode e-3--4H-SiC Schottky: Ama-Diode anamandla aphezulu, izinga lokushisa eliphezulu, izinhlelo zokusebenza zemvamisa ephezulu. Lawa madivayisi anikeza ukusebenza kahle okuphezulu kanye nokulahlekelwa okuphansi kokuqhuba kanye nokushintsha.

Amadivayisi e-Optoelectronic angu-4--4H-SiC: Amadivayisi asetshenziswa ezindaweni ezifana nama-laser diode anamandla aphezulu, ama-UV detectors kanye nama-optoelectronic integrated circuits. Lawa madivayisi anezici zamandla aphezulu kanye nemvamisa.

Ngamafuphi, ama-wafer e-SiC angafakwanga i-4H-N angamasentimitha angu-2 anamandla okusetshenziswa okuhlukahlukene, ikakhulukazi kuma-electronics kagesi kanye ne-RF. Ukusebenza kwawo okuphezulu kanye nokuqina kokushisa okuphezulu kuwenza abe ngumncintiswano onamandla wokufaka esikhundleni sezinto ze-silicon zendabuko zezinhlelo zokusebenza eziphezulu, zokushisa okuphezulu kanye nezamandla aphezulu.