2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Research kanye nebanga leDummy

Incazelo emfushane:

I-Shanghai Xinkehui Tech. I-Co., Ltd inikezela ngokukhetha okungcono kakhulu nezintengo zamawafa e-silicon carbide ekhwalithi ephezulu kanye ne-substrates kufika kumadiayamitha amayintshi ayisithupha ngezinhlobo ze-N- kanye ne-semi-insulating. Izinkampani ezincane nezinkulu zemishini ye-semiconductor namalebhu ocwaningo asetshenziswa emhlabeni wonke futhi athembele kumawafa ethu e-silicone carbide.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Imibandela ye-Parametric yama-wafers we-SiC ahlehlisiwe angu-2-intshi angu-4H-N ihlanganisa

I-substrate material: 4H silicon carbide (4H-SiC)

Isakhiwo sekristalu: i-tetrahexahedral (4H)

I-Doping: Ihlehlisiwe (4H-N)

Usayizi: 2 amayintshi

Uhlobo lwe-conductivity: Uhlobo lwe-N (n-doped)

I-Conductivity: I-Semiconductor

I-Market Outlook: Amawafa e-SiC angewona ama-doped angama-4H-N anezinzuzo eziningi, njengokuhamba okuphezulu kwe-thermal, ukulahleka kokusebenza okuphansi, ukumelana nezinga lokushisa eliphakeme kakhulu, nokuzinza okuphezulu kwemishini, futhi ngaleyo ndlela abe nombono obanzi wemakethe kugesi wamandla kanye nezicelo ze-RF. Ngokuthuthukiswa kwamandla avuselelekayo, izimoto zikagesi kanye nokuxhumana, kunesidingo esikhulayo samadivayisi asebenza kahle kakhulu, ukusebenza okuphezulu kwezinga lokushisa kanye nokubekezelela amandla aphezulu, okunikeza ithuba elibanzi lemakethe lama-wafers we-SiC angewona ama-doped angu-4H-N.

Ukusetshenziswa: Amawafa e-SiC angewona ama-doped angu-2-intshi angu-4H-N angasetshenziswa ukwakha izinhlobonhlobo zamandla kagesi kanye namadivayisi e-RF, okuhlanganisa kodwa kungagcini nje:

I-1--4H-SiC MOSFETs: I-Metal oxide semiconductor field effect transistors yamandla aphezulu/ukushisa okuphezulu kwezicelo. Lawa madivayisi ane-conduction ephansi kanye nokulahlekelwa kokushintsha ukuze anikeze ukusebenza kahle okuphezulu nokuthembeka.

I-2--4H-SiC JFETs: Ama-Junction FET we-RF amplifier yamandla kanye nokushintsha izinhlelo zokusebenza. Lawa madivayisi anikeza ukusebenza kwemvamisa ephezulu kanye nokuzinza okuphezulu kokushisa.

I-3--4H-SiC Schottky Diodes: Ama-Diode amandla aphezulu, izinga lokushisa eliphezulu, izinhlelo zokusebenza zemvamisa ephezulu. Lezi zixhobo zinikeza ukusebenza kahle okuphezulu ngokuqhutshwa okuphansi nokulahlekelwa kokushintsha.

I-4--4H-SiC Amadivayisi e-Optoelectronic: Amadivayisi asetshenziswa ezindaweni ezifana ne-laser diode yamandla aphezulu, izitholi ze-UV kanye namasekethe ahlanganisiwe we-optoelectronic. Lawa madivayisi anamandla aphezulu kanye nezici zokuvama.

Kafushane, amawafa e-SiC angewona ama-doped angu-2-intshi angu-4H-N anamandla ohlu olubanzi lwezinhlelo zokusebenza, ikakhulukazi kugesi wamandla kanye ne-RF. Ukusebenza kwabo okuphakeme nokuzinza kwezinga lokushisa eliphezulu kubenza babe yimbangi eqinile yokushintsha izinto ze-silicon zendabuko ekusebenzeni okuphezulu, izinga lokushisa eliphezulu kanye nezicelo zamandla aphezulu.