2inch 3inch 4inch InP epitaxial wafer substrate APD umtshina wokukhanya wokuxhumana kwe-fiber optic noma i-LiDAR

2inch 3inch 4inch InP epitaxial wafer substrate APD umtshina wokukhanya wokuxhumana kwe-fiber optic noma Isithombe Esifakiwe se-LiDAR

Incazelo emfushane:

I-InP epitaxial substrate iyisisekelo sokwenza i-APD, ngokuvamile into esetshenziswa yisemiconductor efakwa ku-substrate ngobuchwepheshe bokukhula be-epitaxial. Izinto ezisetshenziswa kakhulu zifaka i-silicon (Si), i-gallium arsenide (GaAs), i-gallium nitride (GaN), njll., enezici ezinhle kakhulu ze-photoelectric. I-photodetector ye-APD iwuhlobo olukhethekile lwe-photodetector esebenzisa umphumela we-avalanche photoelectric ukuthuthukisa isignali yokuthola. Uma isigameko sama-photons ku-APD, amapheya e-electron-hole ayakhiqizwa. Ukusheshisa kwalaba bathwali ngaphansi kwesenzo sensimu kagesi kungase kuholele ekwakhiweni kwezithwali eziningi, "umphumela we-avalanche", okwandisa kakhulu ukukhishwa kwamanje.
Ama-Epitaxial wafers akhuliswe yi-MOCvD agxile ezinhlelweni zokusebenza ze-avalanche photodetection diode. Isendlalelo sokumuncwa silungiswe impahla ye-U-InGaAs ene-doping yangemuva <5E14. Isendlalelo esisebenzayo singasebenzisa i-InP noma i-InAlAslayer. I-InP epitaxial substrate iyinto eyisisekelo yokukhiqiza i-APD, enquma ukusebenza komtshina wokubona. I-APD photodetector iwuhlobo lwesithwebuli sezithombe esizwela kakhulu, esisetshenziswa kakhulu emikhakheni yezokuxhumana, yokuzwa kanye neyokucabanga.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici ezibalulekile zeshidi le-InP laser epitaxial zifaka

1. Izici zegebe lebhendi: I-InP inegebe elincane lebhande, elifanele ukutholwa kokukhanya kwe-infrared yamaza amade, ikakhulukazi kububanzi be-wavelength obungu-1.3μm ukuya ku-1.5μm.
2. Ukusebenza kwamehlo: Ifilimu ye-InP epitaxial inokusebenza okuhle kokubona, okunjengamandla akhanyayo nokusebenza kahle kwenani langaphandle kumaza ahlukene. Isibonelo, ku-480 nm, amandla akhanyayo nokusebenza kahle kwe-quantum yangaphandle kungu-11.2% no-98.8%, ngokulandelana.
3. I-Carrier dynamics: I-InP nanoparticles (NPs) ibonisa ukuziphatha kokubola okuphindwe kabili ngesikhathi sokukhula kwe-epitaxial. Isikhathi sokubola okusheshayo sibalelwa ekujovweni kwenkampani yenethiwekhi kusendlalelo se-InGaAs, kuyilapho isikhathi sokubola kancane sihlobene nokuhlanganisa inkampani yenethiwekhi kuma-InP NP.
4. Izici zokushisa okuphezulu: I-AlGaInAs/InP quantum well material inokusebenza okuhle kakhulu ekushiseni okuphezulu, okungavimbela ngempumelelo ukuvuza komfudlana futhi kuthuthukise izici zokushisa eziphezulu ze-laser.
5. Inqubo yokukhiqiza: Amashidi e-InP epitaxial ngokuvamile atshalwa ku-substrate nge-molecular beam epitaxy (MBE) noma ubuchwepheshe be-metal-organic chemical vapor deposition (MOCVD) ukuze kuzuzwe amafilimu ekhwalithi ephezulu.
Lezi zici zenza ama-wafer e-laser epitaxial e-InP abe nezinhlelo zokusebenza ezibalulekile ekuxhumaneni kwe-fiber optical, ukusatshalaliswa kokhiye we-quantum kanye nokutholwa kokubona okukude.

Izinhlelo zokusebenza eziyinhloko zamaphilisi e-InP laser epitaxial zihlanganisa

1. Ama-Photonics: Amalaza e-InP nezithonjana asetshenziswa kakhulu kwezokuxhumana ngokubona, izikhungo zedatha, i-infrared imaging, i-biometrics, inzwa ye-3D kanye ne-LiDAR.

2. Ukuxhumana ngocingo: Izinto ze-InP zinezinhlelo zokusebenza ezibalulekile ekuhlanganisweni okukhulu kwe-silicon-based long-wavelength lasers, ikakhulukazi ekuxhumaneni kwe-fiber optical.

3. Amalaser e-infrared: Ukusetshenziswa kwama-laser we-quantum asekelwe ku-InP asekelwe ku-InP kubhendi ye-infrared emaphakathi (njengama-microns angu-4-38), okuhlanganisa ukuzwa kwegesi, ukutholwa kokuqhuma nokuthwebula kwe-infrared.

4. I-Silicon photonics: Ngobuchwepheshe bokuhlanganisa obuhlukahlukene, i-laser ye-InP idluliselwa ku-substrate esekwe ku-silicon ukuze yakhe iplathifomu yokuhlanganisa ye-silicon optoelectronic enemisebenzi eminingi.

5.Ama-laser asebenza kakhulu: Izinto ze-InP zisetshenziselwa ukukhiqiza amalaser asebenza kahle kakhulu, njengamalaser e-InGaAsP-InP transistor anobude begagasi obungu-1.5 microns.

I-XKH inikeza amawafa e-InP epitaxial angokwezifiso anezakhiwo nobukhulu obuhlukahlukene, ahlanganisa izinhlelo zokusebenza ezihlukahlukene ezifana nokuxhumana okubonakalayo, izinzwa, iziteshi eziyisisekelo ze-4G/5G, njll. Imikhiqizo ye-XKH ikhiqizwa kusetshenziswa okokusebenza kwe-MOCVD okuthuthukisiwe ukuze kuqinisekiswe ukusebenza okuphezulu nokuthembeka. Ngokuphathelene nokuhlelwa kwempahla, i-XKH inohlu olubanzi lwamashaneli omthombo wamazwe ngamazwe, ingakwazi ukuphatha inani lama-oda ngokuguquguqukayo, futhi inikeze izinsizakalo ezingeziwe ezifana nokunciphisa, ukuhlukanisa, njll. Izinqubo zokulethwa eziphumelelayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende izinga kanye nezikhathi zokulethwa. Ngemva kokufika, amakhasimende angathola ukwesekwa okupheleleyo kwezobuchwepheshe kanye nesevisi yangemva kokuthengisa ukuze aqinisekise ukuthi umkhiqizo usetshenziswa kahle.