156mm 159mm 6 inch Sapphire Wafer yenkampani yenethiwekhi i-C-Plane DSP TTV
Ukucaciswa
| Into | 6-intshi C-plane(0001) Sapphire Wafers | |
| I-Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Ibanga | Prime, Epi-Ready | |
| I-Surface Orientation | I-C-plane(0001) | |
| Indiza ye-C-engeli ebheke ku-M-eksisi 0.2 +/- 0.1° | ||
| Ububanzi | 100.0 mm +/- 0.1 mm | |
| Ubukhulu | 650 μm +/- 25 μm | |
| Isisekelo se-Flat Orientation | Indiza ye-C(00-01) +/- 0.2° | |
| Uhlangothi Olulodwa Lupholishiwe | Indawo Engaphambili | I-Epi-polished, Ra <0.2 nm (by AFM) |
| (SSP) | Indawo Engemuva | Umhlabathi omuhle, uRa = 0.8 μm kuya ku-1.2 μm |
| Uhlangothi Olukabili Lupholishiwe | Indawo Engaphambili | I-Epi-polished, Ra <0.2 nm (by AFM) |
| (DSP) | Indawo Engemuva | I-Epi-polished, Ra <0.2 nm (by AFM) |
| I-TTV | < 20 μm | |
| KHOTHAMA | < 20 μm | |
| I-WARP | < 20 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza igumbi lokuhlanza le-Class 100 kanye nokupakishwa kwe-vacuum, | |
| Izingcezu ezingama-25 ephaketheni lekhasethi elilodwa noma ephaketheni lesiqephu esisodwa. | ||
Indlela ye-Kylopoulos (indlela ye-KY) okwamanje isetshenziswa izinkampani eziningi e-China ukukhiqiza amakristalu esafire ukuze asetshenziswe ezimbonini ze-electronics kanye ne-optics.
Kule nqubo, i-high-purity aluminium oxide incibilika ku-crucible emazingeni okushisa angaphezu kuka-2100 degrees Celsius. Ngokuvamile i-crucible yenziwe nge-tungsten noma i-molybdenum. Ikristalu yembewu eqonde ngokunembile icwiliswa ku-alumina encibilikisiwe. Ikristalu yembewu idonselwa phezulu kancane futhi ingase ijikelezwe kanyekanye. Ngokulawula ngokunembile izinga lokushisa, izinga lokudonsa kanye nezinga lokupholisa, ingot enkulu, eyikristalu eyodwa, ecishe ibe yi-cylindrical ingakhiqizwa kusukela ekuncibilikeni.
Ngemva kokuba i-crystal sapphire ingots eyodwa isikhulile, ibhobhozwa ibe yizinduku eziyisilinda, ezibe sezisikwa zibe ugqinsi olufiswayo lwefasitela futhi ekugcineni lupholishwe kuze kube sekugcineni okufunekayo.
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