156mm 159mm 6 inch Sapphire Wafer yenkampani yenethiwekhiC-Plane DSP TTV
Ukucaciswa
Into | 6-intshi C-plane(0001) Sapphire Wafers | |
I-Crystal Materials | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
Ibanga | Prime, Epi-Ready | |
I-Surface Orientation | I-C-plane(0001) | |
Indiza ye-C-engeli ebheke ku-M-eksisi 0.2 +/- 0.1° | ||
Ububanzi | 100.0 mm +/- 0.1 mm | |
Ubukhulu | 650 μm +/- 25 μm | |
Isisekelo se-Flat Orientation | Indiza ye-C(00-01) +/- 0.2° | |
Uhlangothi Olulodwa Lupholishiwe | Indawo Engaphambili | I-Epi-polished, Ra <0.2 nm (by AFM) |
(SSP) | Indawo Engemuva | Umhlabathi omuhle, uRa = 0.8 μm kuya ku-1.2 μm |
Uhlangothi Olukabili Lupholishiwe | Indawo Engaphambili | I-Epi-polished, Ra <0.2 nm (by AFM) |
(DSP) | Indawo Engemuva | I-Epi-polished, Ra <0.2 nm (by AFM) |
I-TTV | < 20 μm | |
KHOTHAMA | < 20 μm | |
I-WARP | < 20 μm | |
Ukuhlanza / Ukupakisha | Ukuhlanza igumbi lokuhlanza le-Class 100 kanye nokupakishwa kwe-vacuum, | |
Izingcezu ezingama-25 ephaketheni lekhasethi elilodwa noma ephaketheni lesiqephu esisodwa. |
Indlela ye-Kylopoulos (indlela ye-KY) okwamanje isetshenziswa izinkampani eziningi e-China ukukhiqiza amakristalu esafire ukuze asetshenziswe ezimbonini ze-electronics kanye ne-optics.
Kule nqubo, i-high-purity aluminium oxide incibilika ku-crucible emazingeni okushisa angaphezu kuka-2100 degrees Celsius. Ngokuvamile i-crucible yenziwe nge-tungsten noma i-molybdenum. Ikristalu yembewu eqonde ngokunembile icwiliswa ku-alumina encibilikisiwe. Ikristalu yembewu idonselwa phezulu kancane futhi ingase ijikelezwe kanyekanye. Ngokulawula kahle i-gradient yezinga lokushisa, izinga lokudonsa kanye nezinga lokupholisa, ingot enkulu, eyikristalu eyodwa, cishe eyi-cylindrical ingakhiqizwa kusukela ekuncibilikeni.
Ngemva kokuba i-crystal sapphire ingots eyodwa isikhulile, ibhobhozwa ibe yizinduku eziyisilinda, ezibe sezisikwa zibe ugqinsi olufiswayo lwefasitela futhi ekugcineni lupholishwe kuze kube sekugcineni okufunekayo.