I-12 intshi ye-SiC Substrate N Uhlobo Lwezicelo Ze-RF Ezinosayizi Omkhulu Osebenza Kakhulu

12 intshi ye-SiC Substrate N Uhlobo Losayizi Omkhulu Osebenza Kakhulu Okuphezulu Izicelo ze-RF Isithombe Esifakiwe

Incazelo emfushane:

I-substrate ye-SiC engu-12 intshi imele intuthuko ephawulekayo kubuchwepheshe bezinto ze-semiconductor, enikeza izinzuzo eziguqukayo zama-electronics wamandla kanye nezicelo ze-high-frequency. Njengefomethi enkulu kunazo zonke etholakalayo embonini ye-silicon carbide wafer, i-substrate ye-SiC engu-12-inch inika amandla umnotho ongakaze ubonwe ngaphambili ngenkathi igcina izinzuzo zemvelo zezimpawu ze-bandgap ebanzi kanye nezakhiwo ezishisayo ezihlukile. Uma kuqhathaniswa namawafa e-SiC avamile angu-6-intshi noma amancane, inkundla engu-12-intshi iletha indawo engaphezulu kuka-300% esebenzisekayo ngewafa ngayinye, inyusa ngokumangazayo isivuno sokufa futhi yehlisa izindleko zokukhiqiza zamadivayisi kagesi. Lolu shintsho losayizi lubonisa ukuvela komlando kwamawafa e-silicon, lapho ukwanda ngakunye kobubanzi kulethe ukuncipha kwezindleko okukhulu kanye nokuthuthukiswa kokusebenza. I-12-inch SiC substrate's superior conductivity thermal conductivity (cishe i-3× leyo ye-silicon) namandla enkambu ephukile ebucayi ayenza ibaluleke kakhulu ezinhlelweni zezimoto zikagesi ze-800V zesizukulwane esilandelayo, lapho inika amandla amamojula wamandla ahlangene futhi asebenza kahle. Kungqalasizinda ye-5G, isivinini sokugcwala kwama-electron aphezulu sivumela amadivayisi e-RF ukuthi asebenze ngamaza aphezulu ngokulahleka okuphansi. Ukuhambisana kwe-substrate nemishini yokukhiqiza i-silicon eguquliwe futhi kusiza ukutholwa kalula yindwangu ekhona, nakuba ukuphathwa okukhethekile kuyadingeka ngenxa yokuqina okwedlulele kwe-SiC (9.5 Mohs). Njengoba amanani okukhiqiza enyuka, i-substrate ye-SiC engu-12-intshi kulindeleke ukuthi ibe indinganiso yemboni yezicelo zamandla aphezulu, iqhubekisele phambili ukwakheka okusha kuzo zonke izimoto, amandla avuselelekayo, kanye nezinhlelo zokuguqula amandla ezimboni.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Imingcele yezobuchwepheshe

I-12 inch Silicon Carbide (SiC) Substrate Specification
Ibanga		Ukukhiqizwa kwe-ZeroMPD Ibanga(Z Grade)	Ukukhiqizwa Okujwayelekile Ibanga(P Grade)		Dummy Grade (D Grade)
Ububanzi		3 0 0 mm ~ 1305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
I-Wafer Orientation		Ku-axis evaliwe : 4.0° kuya ku-<1120 >±0.5° ku-4H-N, Ku-eksisi : <0001>±0.5° ku-4H-SI
I-Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukungazweli	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Isisekelo se-Flat Orientation		{10-10} ±5.0°
Ubude Befulethi obuyisisekelo	4H-N	N/A
	4H-SI	Inothi
Ukukhishwa komkhawulo		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ubulukhuni		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light I-Hex Plates Ngokukhanya Okunamandla Okuphezulu Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu I-Visual Carbon Inclusions I-Silicon Surface Scratches By High Intensity Light		Lutho Indawo eqoqiwe ≤0.05% Lutho Indawo eqoqiwe ≤0.05% Lutho			Ubude obuqongelelwayo ≤ 20 mm, ubude obubodwa≤2 mm Indawo eqoqiwe ≤0.1% Indawo eqoqiwe≤3% Indawo eqoqiwe ≤3% Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu		Akukho okuvunyelwe ≥0.2mm ububanzi nokujula			7 okuvunyelwe, ≤1 mm ngakunye
(TSD) Ukukhipha isikulufu sochungechunge		≤500 cm-2		N/A
(BPD) Ukususwa kwendiza okuyisisekelo		≤1000 cm-2		N/A
I-Silicon Surface Contamination By High Intensity Light		Lutho
Ukupakisha		Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa
Amanothi:
1 Imikhawulo yokukhubazeka isebenza kuyo yonke indawo eyiwafa ngaphandle kwendawo engabaliwe enqenqemeni. 2Ukuklwebheka kufanele kubhekwe ku-Si face kuphela. 3 Idatha yokususwa isuka kumawafa aqoshiwe e-KOH kuphela.

Izici Eziyinhloko

1. Inzuzo Yosayizi Omkhulu: I-substrate ye-SiC engu-12-intshi (i-12-inch silicon carbide substrate) inikeza indawo enkulu ye-wafer eyodwa, eyenza ama-chips amaningi akhiqizwe ngewafa ngayinye, ngaleyo ndlela kuncishiswe izindleko zokukhiqiza nokwandisa isivuno.
2. I-High-Performance Material: Ukumelana nezinga lokushisa eliphezulu kwe-silicon carbide namandla enkambu yokwephuka okuphezulu kwenza i-substrate engu-12-intshi ifaneleke kuhlelo lwamandla kagesi aphezulu kanye nama-high-frequency, njengama-EV inverters kanye nezinhlelo zokushaja ngokushesha.
3. Ukuvumelana Kokucubungula: Naphezu kobunzima obukhulu kanye nezinselele zokucubungula ze-SiC, i-substrate ye-SiC engu-12-intshi ifinyelela amaphutha angaphansi ngokusebenzisa amasu okusika athuthukisiwe nokupholisha, ukuthuthukisa isivuno sedivayisi.
4. Ukulawulwa Okushisayo Okuphezulu: Ngokusebenza okungcono kwe-thermal kunezinto ezisekelwe ku-silicon, i-substrate engu-12-intshi ibhekana ngokuphumelelayo nokuchithwa kokushisa kumadivayisi anamandla amakhulu, yandisa isikhathi sokuphila kwemishini.

Izicelo Eziyinhloko

1. Izimoto zikagesi: I-substrate ye-SiC engu-12 intshi (i-12-inch silicon carbide substrate) iyingxenye eyinhloko yezinhlelo zokushayela zikagesi zesizukulwane esilandelayo, evumela ama-inverters asebenza kahle kakhulu athuthukisa ububanzi futhi anciphise isikhathi sokushaja.

2. I-5G Base Stations: Ama-substrates e-SiC anosayizi omkhulu asekela amadivayisi we-RF anemvamisa ephezulu, ahlangabezana nezidingo zeziteshi eziyisisekelo ze-5G zamandla aphezulu nokulahlekelwa okuncane.

I-3.Impahla Yamandla Embonini: Ku-solar inverters namagridi ahlakaniphile, i-substrate engu-12-intshi ingakwazi ukumelana nama-voltage aphezulu kuyilapho inciphisa ukulahlekelwa kwamandla.

4.I-Consumer Electronics: Amashaja asheshayo esikhathi esizayo nezinto zikagesi zesikhungo sedatha zingasebenzisa ama-substrates e-SiC angu-12-intshi ukuze kuzuzwe usayizi ohlangene nokusebenza kahle okuphezulu.

Izinkonzo ze-XKH

Sisebenza ngokukhethekile ezinsizeni zokucubungula ezenziwe ngokwezifiso zama-substrates e-SiC angu-12-inch (12-inch silicon carbide substrates), okuhlanganisa:
1. Ukudayela nokupholisha: Ukonakala okuphansi, ukucutshungulwa kwe-substrate ephansi ehambisana nezimfuneko zekhasimende, okuqinisekisa ukusebenza okuzinzile kwedivayisi.
2. Ukusekelwa Kokukhula Kwe-Epitaxial: Izinsizakalo zekhwalithi ephezulu ze-epitaxial wafer ukusheshisa ukukhiqizwa kwama-chip.
3. I-Small-Batch Prototyping: Isekela ukuqinisekiswa kwe-R&D ezikhungweni zocwaningo namabhizinisi, kufinyezwe imijikelezo yentuthuko.
4. I-Technical Consulting: Izixazululo zokuphela-kuya-ekupheleni kusukela ekukhethweni kwezinto ezibonakalayo kuya ekucutshungulweni kokusebenza kahle, ukusiza amakhasimende ukunqoba izinselele zokucubungula i-SiC.
Kungakhathaliseki ukuthi okokukhiqiza ngobuningi noma ukwenza ngokwezifiso okukhethekile, izinsiza zethu ze-SiC substrate engu-12 intshi zihambisana nezidingo zephrojekthi yakho, zinika amandla intuthuko yezobuchwepheshe.