I-substrate

I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
i-sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela yokwenza ngokwezifiso
I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili.
I-GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yokwelashwa nge-laser
I-GaAs laser epitaxial wafer 4 intshi 6 intshi VCSEL umgodi oqondile we-laser wavelength 940nm ukuhlangana okukodwa
2inch 3inch 4inch InP epitaxial wafer substrate APD umtshina wokukhanya wokuxhumana kwe-fiber optic noma i-LiDAR
indandatho yesafire eyenziwe ngezinto zesafire zokwenziwa Ubulukhuni be-Mohs obusobala futhi obenzeka ngokwezifiso abangu-9
I-Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
indandatho yesafire indandatho yonke yesafire eyenziwe ngokuphelele ngesafire Transparent lab-made sapphire material
I-Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Ikristalu Eyodwa
I-SiC substrate 3inch 350um ukujiya HPSI uhlobo Prime Grade Dummy grade
I-Silicon Carbide SiC Ingot engu-6inch N yohlobo lweDummy/ugqinsi lwebanga lokuqala lungenziwa ngokwezifiso

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