Isikebhe se-Silicon Carbide (SiC) Wafer

Isithombe Esifakiwe Sesikebhe Se-Silicon Carbide (SiC) Wafer

Incazelo emfushane:

Isikebhe se-Silicon Carbide (SiC) samafutha siyisithuthi senqubo ye-semiconductor esenziwe ngezinto ze-SiC ezihlanzekile kakhulu, ezenzelwe ukubamba nokuthutha ama-wafer ngesikhathi sezinqubo ezibalulekile zokushisa okuphezulu njenge-epitaxy, i-oxidation, i-diffusion, kanye ne-annealing.

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe

Ukubuka konke kwe-Quartz Glass

Ngokuthuthukiswa okusheshayo kwama-semiconductors anamandla kanye namadivayisi e-wide bandgap, izikebhe ze-quartz ezivamile zibhekene nemikhawulo efana nokuguquguquka emazingeni okushisa aphezulu, ukungcola okukhulu kwezinhlayiya, kanye nokuphila isikhathi esifushane. Izikebhe ze-SiC wafer, ezine-thermal stability ephakeme, ukungcola okuphansi, kanye nokuphila isikhathi eside, ziya ngokuya zithatha indawo yezikebhe ze-quartz futhi ziba yisinqumo esithandwayo ekukhiqizweni kwamadivayisi e-SiC.

Izici Eziyinhloko

1. Izinzuzo Zezinto Ezibonakalayo

Kwenziwe nge-SiC ehlanzekile kakhulu ene-ubulukhuni obuphezulu namandla.
Iphuzu lokuncibilika elingaphezu kuka-2700°C, liphakeme kakhulu kune-quartz, okuqinisekisa ukuzinza kwesikhathi eside ezindaweni ezibucayi.

2. Izakhiwo Zokushisa

Ukushisa okuphezulu kokudlulisa ukushisa okusheshayo nokulinganayo, okunciphisa ukucindezeleka kwe-wafer.
I-Coefficient of thermal expansion (CTE) ifana kakhulu ne-SiC substrates, inciphisa ukugoba nokuqhekeka kwe-wafer.

3. Ukuzinza Kwamakhemikhali

Izinzile ngaphansi kokushisa okuphezulu kanye nemimoya ehlukahlukene (H₂, N₂, Ar, NH₃, njll.).
Ukumelana okuhle kakhulu kwe-oxidation, okuvimbela ukubola kanye nokukhiqizwa kwezinhlayiya.

4. Ukusebenza Kwenqubo

Ubuso obubushelelezi nobuminyene kunciphisa ukuchitheka kwezinhlayiya kanye nokungcola.
Igcina ukuzinza kobukhulu kanye nomthamo womthwalo ngemuva kokusetshenziswa isikhathi eside.

5. Ukusetshenziswa Kahle Kwezindleko

Impilo yesevisi ende ngokuphindwe kathathu kuya kahlanu kunezikebhe ze-quartz.
Ukunciphisa imvamisa yokulungisa, kunciphisa isikhathi sokungasebenzi kanye nezindleko zokushintsha.

Izicelo

I-SiC Epitaxy: Ukusekela ama-substrate e-SiC angu-4-intshi, angu-6-intshi, kanye no-8-intshi ngesikhathi sokukhula kwe-epitaxial yokushisa okuphezulu.
Ukwakhiwa Kwedivayisi Yamandla: Ilungele ama-SiC MOSFET, ama-Schottky Barrier Diodes (ama-SBD), ama-IGBT, namanye amadivayisi.
Ukwelashwa Okushisayo: Izinqubo zokufaka i-annealing, i-nitridation, kanye ne-carbonization.
Ukuxutshwa Nokusatshalaliswa: Ipulatifomu yokusekela ye-wafer eqinile yokushisa okuphezulu kanye nokusabalala.

Imininingwane Yobuchwepheshe

Into	Imininingwane
Izinto	I-Silicon Carbide emsulwa kakhulu (i-SiC)
Usayizi we-Wafer	Amasentimitha angu-4 / 6 / 8 (kungenziwa ngezifiso)
Izinga lokushisa eliphezulu lokusebenza.	≤ 1800°C
I-CTE Yokukhulisa Ukushisa	4.2 × 10⁻⁶ /K (eduze kwe-substrate ye-SiC)
Ukuqhuba Okushisayo	120–200 W/m·K
Ubulukhuni Bomphezulu	I-Ra < 0.2 μm
Ukufana	±0.1 mm
Impilo Yesevisi	≥ 3× ubude kunezikebhe ze-quartz

Ukuqhathanisa: Isikebhe se-Quartz vs. Isikebhe se-SiC

Ubukhulu	Isikebhe se-Quartz	Isikebhe se-SiC
Ukumelana Nokushisa	≤ 1200°C, ukuguguleka kokushisa okuphezulu.	≤ 1800°C, izinzile ngokwezinga lokushisa
Umdlalo we-CTE ne-SiC	Ukungafani okukhulu, ingozi yokucindezeleka kwe-wafer	Ukufaniswa okusondelene, kunciphisa ukuqhekeka kwe-wafer
Ukungcola Kwezinhlayiya	Okuphezulu, kukhiqiza ukungcola	Ubuso obuphansi, obubushelelezi nobuminyene
Impilo Yesevisi	Ukushintsha okufushane, okuvamile	Isikhathi eside, isikhathi sokuphila esingaphezu kuka-3–5×
Inqubo Efanelekile	I-Si epitaxy evamile	Kwenzelwe amadivayisi e-SiC epitaxy kanye namandla

Imibuzo Evame Ukubuzwa – Izikebhe Ze-Silicon Carbide (SiC) Wafer

1. Siyini isikebhe se-SiC wafer?

Isikebhe se-SiC wafer siyisithuthi senqubo ye-semiconductor esenziwe nge-silicon carbide emsulwa kakhulu. Sisetshenziselwa ukubamba nokuthutha ama-wafer ngesikhathi sezinqubo zokushisa okuphezulu njenge-epitaxy, i-oxidation, i-diffusion, kanye ne-annealing. Uma kuqhathaniswa nezikebhe ze-quartz zendabuko, izikebhe ze-SiC wafer zinikeza ukuzinza okuphezulu kokushisa, ukungcola okuphansi, kanye nokuphila isikhathi eside kwenkonzo.

2. Kungani ukhethe izikebhe ze-SiC wafer kunezikebhe ze-quartz?

Ukumelana nokushisa okuphezulu: Izinzile kuze kufike ku-1800°C uma kuqhathaniswa ne-quartz (≤1200°C).
Ukufaniswa okungcono kwe-CTE: Eduze kwe-SiC substrates, kunciphisa ukucindezeleka kwe-wafer kanye nokuqhekeka.
Ukukhiqizwa kwezinhlayiya eziphansi: Ubuso obubushelelezi nobuqinile bunciphisa ukungcola.
Isikhathi eside sokuphila: Kude ngokuphindwe ka-3–5 kunezikebhe ze-quartz, okunciphisa izindleko zobunikazi.

3. Yimaphi amasayizi e-wafer angasekelwa yizikebhe ze-wafer ze-SiC?

Sinikeza imiklamo ejwayelekile yeAmasentimitha angu-4, amasentimitha angu-6, kanye namasentimitha angu-8ama-wafer, anezinto zokwenza ngokwezifiso eziphelele ezitholakalayo ukuze kuhlangatshezwane nezidingo zamakhasimende.

4. Yiziphi izinqubo ezivame ukusetshenziswa kuzo izikebhe ze-SiC wafer?

Ukukhula kwe-SiC epitaxial
Ukukhiqizwa kwamadivayisi e-semiconductor yamandla (ama-SiC MOSFET, ama-SBD, ama-IGBT)
Ukufakwa kwe-annealing okushisa okuphezulu, i-nitridation, kanye ne-carbonization
Izinqubo ze-oxidation kanye nokusabalalisa

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.