I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade thickness can ba eyenziwe ngokwezifiso

I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade thickness can ba ngokwezifiso Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon Carbide (i-SiC) iyinto ye-semiconductor ebanzi ethola ukudonswa okukhulu ezimbonini ezahlukahlukene ngenxa yezakhiwo zayo eziphezulu zikagesi, ezishisayo, nezemishini. I-SiC Ingot esezingeni lika-6-intshi N-type Dummy/Prime yenzelwe ngqo ukukhiqizwa kwamadivayisi e-semiconductor athuthukile, kufaka phakathi izinhlelo zokusebenza zamandla aphezulu kanye nemvamisa ephezulu. Ngezinketho zobukhulu obungenziwa ngokwezifiso kanye nemininingwane eqondile, le ingot ye-SiC inikeza ikhambi elifanele lokuthuthukiswa kwamadivayisi asetshenziswa ezimotweni zikagesi, izinhlelo zamandla ezimboni, ezokuxhumana, kanye neminye imikhakha yokusebenza okuphezulu. Ukuqina kwe-SiC ezimweni ze-voltage ephezulu, izinga lokushisa eliphezulu, kanye nemvamisa ephezulu kuqinisekisa ukusebenza okuhlala isikhathi eside, okusebenzayo, nokuthembekile ezinhlelweni ezahlukahlukene.
I-SiC Ingot itholakala ngosayizi ongu-6 intshi, nobubanzi obungu-150.25mm ± 0.25mm kanye nobukhulu obungaphezu kuka-10mm, okwenza kube kuhle kakhulu ekusikeni i-wafer. Lo mkhiqizo unikeza ukuqondiswa okucacile kobuso obungu-4° kuya ku-<11-20> ± 0.2°, okuqinisekisa ukunemba okuphezulu ekwenziweni kwedivayisi. Ngaphezu kwalokho, i-ingot ine-orientation eyisisekelo eyisicaba engu-<1-100> ± 5°, okufaka isandla ekulinganisweni kwekristalu okuhle kakhulu kanye nokusebenza kokucubungula.
Njengoba inokumelana okuphezulu okuphakathi kuka-0.015–0.0285 Ω·cm, ukuminyana okuphansi kwe-micropipe okungu-<0.5, kanye nekhwalithi ephezulu yomphetho, le SiC Ingot ifaneleka ekukhiqizweni kwamadivayisi kagesi adinga amaphutha amancane kanye nokusebenza okuphezulu ngaphansi kwezimo ezimbi kakhulu.

Sithumelele i-imeyili

Izici

Izakhiwo

Izinga: Izinga Lokukhiqiza (I-Dummy/Prime)
Usayizi: ububanzi obuyi-intshi eziyi-6
Ububanzi: 150.25mm ± 0.25mm
Ubukhulu: >10mm (Ubukhulu obungenziwa ngezifiso buyatholakala uma uceliwe)
Ukuqondiswa Komphezulu: 4° kuya ku-<11-20> ± 0.2°, okuqinisekisa ikhwalithi ephezulu yekristalu kanye nokuqondana okunembile kokwenziwa kwedivayisi.
Ukuma Okuyisisekelo Okuyisicaba: <1-100> ± 5°, isici esibalulekile sokusika kahle i-ingot ibe ama-wafer kanye nokukhula kahle kwekristalu.
Ubude Obuyisicaba Obuyinhloko: 47.5mm ± 1.5mm, okwenzelwe ukuphathwa kalula kanye nokusika ngokunemba.
Ukumelana: 0.015–0.0285 Ω·cm, ilungele ukusetshenziswa kumadivayisi wamandla asebenza kahle kakhulu.
Ubuningi be-Micropipe: <0.5, okuqinisekisa amaphutha amancane angathinta ukusebenza kwamadivayisi enziwe.
I-BPD (Ubuningi be-Boron Pitting): <2000, inani eliphansi elibonisa ubumsulwa obuphezulu bekristalu kanye nobuningi obuphansi besici.
I-TSD (Ubuningi be-Threading Screw Dislocation): <500, okuqinisekisa ubuqotho obuhle kakhulu bezinto ezibonakalayo zamadivayisi asebenza kahle kakhulu.
Izindawo ze-Polytype: Azikho – i-ingot ayinazo iziphambeko ze-polytype, inikeza ikhwalithi ephezulu yezinto zokwakha zezinhlelo zokusebenza eziphezulu.
Ama-Edge Indents: <3, anobubanzi nokujula okungu-1mm, okuqinisekisa umonakalo omncane womphezulu kanye nokugcina ubuqotho be-ingot ukuze kusikwe kahle i-wafer.
Imifantu Yomphetho: 3, <1mm ngayinye, kanye nomonakalo omncane womphetho, okuqinisekisa ukuphathwa okuphephile kanye nokucutshungulwa okuqhubekayo.
Ukupakisha: Ikesi le-wafer – i-SiC ingot ipakishwa ngokuphephile ebhokisini le-wafer ukuqinisekisa ukuthuthwa nokuphathwa okuphephile.

Izicelo

Amandla kagesi:Ingot ye-SiC engamasentimitha angu-6 isetshenziswa kakhulu ekukhiqizweni kwamadivayisi kagesi anamandla njenge-MOSFET, i-IGBTs, nama-diode, okuyizinto ezibalulekile ezinhlelweni zokuguqulwa kwamandla. Lawa madivayisi asetshenziswa kabanzi kuma-inverter ezimoto zikagesi (EV), ama-drive ezimoto zezimboni, izinsiza zikagesi, kanye nezinhlelo zokugcina amandla. Amandla e-SiC okusebenza kuma-voltage aphezulu, amaza aphezulu, kanye namazinga okushisa aphezulu enza kube kuhle kakhulu ekusetshenzisweni lapho amadivayisi endabuko e-silicon (Si) angaba nzima ukusebenza kahle.

Izimoto Zikagesi (ama-EV):Ezimotweni zikagesi, izingxenye ezisekelwe ku-SiC zibalulekile ekuthuthukisweni kwamamojula kagesi kuma-inverters, ama-converter e-DC-DC, kanye namashaja asebhodini. Ukushisa okuphezulu kwe-SiC kuvumela ukukhiqizwa kokushisa okuncishisiwe kanye nokusebenza kahle kokuguqulwa kwamandla, okubalulekile ekuthuthukiseni ukusebenza kanye nobubanzi bokushayela kwezimoto zikagesi. Ngaphezu kwalokho, amadivayisi e-SiC avumela izingxenye ezincane, ezilula, nezithembekile, okufaka isandla ekusebenzeni okuphelele kwezinhlelo ze-EV.

Izinhlelo Zamandla Avuselelekayo:Ama-ingot e-SiC ayizinto ezibalulekile ekuthuthukisweni kwamadivayisi okuguqula amandla asetshenziswa ezinhlelweni zamandla avuselelekayo, okuhlanganisa ama-solar inverters, ama-wind turbine, kanye nezixazululo zokugcina amandla. Amakhono aphezulu okuphatha amandla e-SiC kanye nokuphathwa kokushisa okuphumelelayo kuvumela ukusebenza kahle kokuguqulwa kwamandla kanye nokuthembeka okuthuthukisiwe kulezi zinhlelo. Ukusetshenziswa kwawo emandleni avuselelekayo kusiza ekuqhubekiseni imizamo yomhlaba wonke ekuqiniseni amandla.

Ezokuxhumana:Ingot ye-SiC engamasentimitha angu-6 ifaneleka futhi ekukhiqizeni izingxenye ezisetshenziswa ezinhlelweni ze-RF (imvamisa yomsakazo) ezinamandla aphezulu. Lokhu kufaka phakathi ama-amplifier, ama-oscillator, kanye nezihlungi ezisetshenziswa ezinhlelweni zokuxhumana ngocingo kanye nezokuxhumana ngesathelayithi. Ikhono le-SiC lokuphatha amaza aphezulu kanye namandla aphezulu lenza kube yinto enhle kakhulu yamadivayisi okuxhumana ngocingo adinga ukusebenza okuqinile kanye nokulahleka okuncane kwesiginali.

Izindiza kanye Nokuvikela:I-voltage ephezulu ye-SiC kanye nokumelana nokushisa okuphezulu kwenza kube kuhle kakhulu ekusetshenzisweni kwezindiza kanye nezokuvikela. Izingxenye ezenziwe ngama-ingot e-SiC zisetshenziswa ezinhlelweni ze-radar, ukuxhumana ngesathelayithi, kanye ne-elekthronikhi yamandla yezindiza kanye nezindiza-mkhathi. Izinto ezisekelwe ku-SiC zivumela izinhlelo zezindiza-mkhathi ukuthi zisebenze ngaphansi kwezimo ezimbi kakhulu ezitholakala emkhathini nasezindaweni eziphakeme.

Ukuzenzakalela Kwezimboni:Ekwenzeni okuzenzakalelayo kwezimboni, izingxenye ze-SiC zisetshenziswa kuma-sensor, ama-actuator, kanye nezinhlelo zokulawula ezidinga ukusebenza ezindaweni ezinzima. Amadivayisi asekelwe ku-SiC asetshenziswa emishinini edinga izingxenye ezisebenzayo nezihlala isikhathi eside ezikwazi ukumelana namazinga okushisa aphezulu kanye nokucindezeleka kukagesi.

Ithebula Lokucaciswa Komkhiqizo

Impahla	Imininingwane
Ibanga	Ukukhiqizwa (I-Dummy/Prime)
Usayizi	Amasentimitha angu-6
Ububanzi	150.25mm ± 0.25mm
Ubukhulu	>10mm (Kungenziwa ngezifiso)
Ukuqondiswa Komphezulu	4° ukuya ku-<11-20> ± 0.2°
Ukuqondiswa Okuyisisekelo Okuyisicaba	<1-100> ± 5°
Ubude Obuphansi Obuyinhloko	47.5mm ± 1.5mm
Ukumelana	0.015–0.0285 Ω·cm
Ubuningi be-Micropipe	<0.5
Ubuningi be-Boron Pitting (BPD)	<2000
Ubuningi Bokuhlukaniswa Kwesikulufo Sokuchusha (TSD)	<500
Izindawo ze-Polytype	Akukho
Ama-Edge Indents	<3, ububanzi nokujula okungu-1mm
Imifantu Yomphetho	3, <1mm/nganye
Ukupakisha	Ikesi le-wafer

Isiphetho

I-SiC Ingot engu-6-intshi – uhlobo lwe-N Dummy/Prime iyinto esezingeni eliphezulu ehlangabezana nezidingo eziqinile zemboni ye-semiconductor. Ukushisa kwayo okuphezulu, ukumelana kwayo okungavamile, kanye nobuningi obuphansi besici kwenza kube ukukhetha okuhle kakhulu ekukhiqizweni kwamadivayisi kagesi anamandla athuthukile, izingxenye zezimoto, izinhlelo zokuxhumana, kanye nezinhlelo zamandla avuselelekayo. Ukujiya kanye nokucaciswa okunembile okwenziwe ngokwezifiso kuqinisekisa ukuthi le ingot ye-SiC ingalungiswa ukuze ihambisane nezinhlelo zokusebenza eziningi, iqinisekise ukusebenza okuphezulu kanye nokuthembeka ezindaweni ezidinga kakhulu. Ukuze uthole ulwazi olwengeziwe noma ukufaka i-oda, sicela uxhumane nethimba lethu lokuthengisa.