I-Silicon carbide ceramic tray sucker I-Silicon carbide ceramic tube inikeza ukucutshungulwa ngokwezifiso kwe-sintering yokushisa okuphezulu

I-Silicon carbide ceramic tray sucker I-Silicon carbide ceramic tube inikeza ukucutshungulwa ngokwezifiso kokushisa okuphezulu Isithombe Esifakiwe

Incazelo emfushane:

Ithreyi ye-silicon carbide ceramic kanye namashubhu e-silicon carbide ceramic ayizinto ezibaluleke kakhulu ekusebenzeni okuphezulu ekukhiqizweni kwe-semiconductor. Ithreyi ye-silicon carbide ceramic isetshenziswa kakhulu ekucubungulweni kwe-wafer okuqinile nokubekezela, ukuqinisekisa ukuzinza kwenqubo enembile kakhulu; Amashubhu e-silicon carbide ceramic asetshenziswa kabanzi kumashubhu esithando esishisayo esiphezulu, amashubhu esithando sokusabalalisa kanye nezinye izimo ukuze amelane nezimo ezimbi kakhulu futhi alondoloze ukuphathwa kokushisa okuphumelelayo. Zombili zisekelwe ku-silicon carbide njengezinto eziyinhloko, eseziyingxenye ebalulekile embonini ye-semiconductor ngenxa yezakhiwo zayo ezinhle kakhulu zomzimba nezamakhemikhali.

Sithumelele i-imeyili

Izici

Izici eziyinhloko:

1. Ithreyi ye-ceramic ye-silicon carbide
- Ubulukhuni obuphezulu kanye nokumelana nokuguguleka: ubulukhuni bufana nedayimane, futhi bungamelana nokuguguleka komshini ekucutshungulweni kwe-wafer isikhathi eside.
- Ukushisa okuphezulu kanye nokwanda okuphansi kokushisa: ukushabalalisa ukushisa okusheshayo kanye nokuqina kobukhulu, okugwema ukuguquka okubangelwa ukucindezeleka kokushisa.
- Ukusicaba okuphezulu kanye nokuphela kobuso: Ukusicaba kobuso kufinyelela ezingeni le-micron, okuqinisekisa ukuthintana okugcwele phakathi kwe-wafer nediski, kunciphisa ukungcola kanye nomonakalo.
Ukuqina kwamakhemikhali: Ukumelana nokugqwala okunamandla, okufanelekela ukuhlanza okumanzi kanye nezinqubo zokuqopha ekukhiqizweni kwe-semiconductor.
2. Ishubhu le-ceramic le-silicon carbide
- Ukumelana nokushisa okuphezulu: Ingasebenza endaweni enokushisa okuphezulu ngaphezu kuka-1600°C isikhathi eside, ifanele inqubo yokushisa okuphezulu kwe-semiconductor.
Ukumelana okuhle kakhulu nokugqwala: ukumelana nama-asidi, ama-alkali kanye nezinyibilikisi zamakhemikhali ezahlukahlukene, ezifanelekela izindawo zenqubo enzima.
- Ubulukhuni obukhulu kanye nokumelana nokuguguleka: ukumelana nokuguguleka kwezinhlayiya kanye nokuguguleka komshini, kwandisa impilo yesevisi.
- Ukushisa okuphezulu kanye ne-coefficient ephansi yokwanda kokushisa: ukushesha kokushisa kanye nokuqina kobukhulu, ukunciphisa ukuguquguquka noma ukuqhekeka okubangelwa ukucindezeleka kokushisa.

Ipharamitha Yomkhiqizo:

Ipharamitha yethreyi ye-silicon carbide ceramic:

(Impahla yezinto ezibonakalayo)		(Iyunithi)	(i-ssic)
(Okuqukethwe kwe-SiC)		(Ubude)%	>99
(Usayizi ojwayelekile wokusanhlamvu)		i-micron	4-10
(Ubuningi)		kg/dm3	>3.14
(I-porosity ebonakalayo)		I-Vo1%	<0.5
(Ubulukhuni bukaVickers)	I-HV 0.5	I-GPa	28
() Amandla okugobeka (amaphuzu amathathu)	20ºC	I-MPa	450
(Amandla okucindezela)	20ºC	I-MPa	3900
(I-Elastic Modulus)	20ºC	I-GPa	420
(Ukuqina kokuphuka)		I-MPa/m'%	3.5
(Ukuqhuba kwe-thermal)	20°ºC	W/(m*K)	160
(Ukumelana)	20°ºC	Ohm.cm	106-108
(I-coefficient yokwandisa ukushisa)	a(RT**...80ºC)	K-1*10-6	4.3
(Izinga lokushisa eliphezulu lokusebenza)		oºC	1700

Ipharamitha yeshubhu ye-silicon carbide ceramic:

Izinto	Inkomba
i-α-SIC	99% iminithi
Ukuvuleka Okubonakalayo	Ubuningi obungu-16%
Ubuningi obukhulu	2.7g/cm3 iminithi
Amandla Okugoba Ekushiseni Okuphezulu	100 Mpa min
Isilinganiso Sokwanda Kokushisa	K-1 4.7x10 -6
I-Coefficient of Thermal Conductivity (1400ºC)	24 W/mk
Izinga Lokushisa Eliphezulu Lokusebenza	1650ºC

Izinhlelo zokusebenza eziyinhloko:

1. Ipuleti le-ceramic le-silicon carbide
- Ukusika nokupholisha i-wafer: kusebenza njengepulatifomu yokuthwala ukuqinisekisa ukunemba okuphezulu kanye nokuqina ngesikhathi sokusika nokupholisha.
- Inqubo ye-Lithography: I-wafer iqiniswe emshinini we-lithography ukuqinisekisa ukubekwa okunembile okuphezulu ngesikhathi sokuchayeka.
- Ukupholisha Kwemishini Yamakhemikhali (i-CMP): kusebenza njengepulatifomu yokusekela ama-pads okupholisha, okunikeza ingcindezi efanayo kanye nokusatshalaliswa kokushisa.
2. Ishubhu le-ceramic le-silicon carbide
- Ishubhu lesithando sokushisa okuphezulu: elisetshenziselwa imishini yokushisa okuphezulu njengesithando sokusabalalisa kanye nesithando sokushisa ukuze kuthwalwe ama-wafer okwelashwa kwenqubo yokushisa okuphezulu.
- Inqubo ye-CVD/PVD: Njengepayipi lokuthwala ekamelweni lokusabela, elimelana namazinga okushisa aphezulu kanye namagesi agqwalisayo.
- Izesekeli zemishini ye-semiconductor: zemishini yokushintshanisa ukushisa, amapayipi egesi, njll., ukuthuthukisa ukusebenza kahle kokuphathwa kokushisa kwemishini.
I-XKH inikeza uhla oluphelele lwezinsizakalo ezenziwe ngokwezifiso zamathileyi e-silicon carbide ceramic, izinkomishi zokumunca kanye namashubhu e-silicon carbide ceramic. Amathileyi e-silicon carbide ceramic kanye nezinkomishi zokumunca, i-XKH ingenziwa ngokwezifiso ngokuya ngezidingo zamakhasimende ezinobukhulu obuhlukene, izimo kanye nobulukhuni bomphezulu, futhi isekele ukwelashwa okukhethekile kokumboza, ithuthukise ukumelana nokuguguleka kanye nokumelana nokugqwala; Kumashubhu e-silicon carbide ceramic, i-XKH ingenza ngokwezifiso ububanzi obuhlukahlukene bangaphakathi, ububanzi bangaphandle, ubude kanye nesakhiwo esiyinkimbinkimbi (njengeshubhu elibunjiwe noma ishubhu elinezimbobo), futhi inikeze ukupholisha, ukumboza okulwa nokubola kanye nezinye izinqubo zokwelapha umphezulu. I-XKH iqinisekisa ukuthi amakhasimende angazuza ngokugcwele izinzuzo zokusebenza kwemikhiqizo ye-silicon carbide ceramic ukuze ahlangabezane nezidingo ezidingekayo zamasimu okukhiqiza aphezulu njenge-semiconductors, ama-LED kanye ne-photovoltaics.