I-Silicon carbide Ceramic tray sucker I-Silicon carbide ceramic tube inikeza izinga lokushisa eliphezulu lokucutshungulwa ngokwezifiso kwe-sintering

I-Silicon carbide ceramic tray sucker I-Silicon carbide ceramic tube inikezela ngezinga lokushisa eliphezulu ukucutshungulwa ngokwezifiso kwe-sintering Isithombe esifakiwe

Incazelo emfushane:

Ithreyi ye-Silicon carbide ceramic kanye namashubhu e-silicon carbide ceramic ayizinto ezibaluleke kakhulu ezisebenza kahle ekukhiqizeni i-semiconductor. Ithreyi ye-silicon carbide ceramic isetshenziswa ngokuyinhloko ekucubunguleni i-wafer engaguquki futhi ethwele, ukuqinisekisa ukuzinza kwenqubo yokunemba okuphezulu; Amashubhu e-Silicon carbide ceramic asetshenziswa kakhulu kumashubhu okushisa okushisa aphezulu, amashubhu okushisa okusabalalisa nezinye izimo ukuze amelane nezimo ezimbi kakhulu nokugcina ukuphathwa okushisayo okusebenzayo. Zombili zisekelwe ku-silicon carbide njengento ewumgogodla, osekuyinto ebalulekile embonini ye-semiconductor ngenxa yezakhiwo zayo ezinhle kakhulu zomzimba namakhemikhali.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko:

1. Ithreyi ye-ceramic ye-silicon carbide
- Ukuqina okuphezulu nokumelana nokugqoka: ubulukhuni buseduze nedayimane, futhi bungamelana nokugqokwa kwemishini ekucubungulweni kwe-wafer isikhathi eside.
- Ukushisa okuphezulu kwe-thermal kanye ne-coefficient ephansi yokwandisa ukushisa okushisayo: ukuchithwa kokushisa okusheshayo nokuzinza kwe-dimensional, ukugwema ukuguquguquka okubangelwa ukucindezeleka okushisayo.
- Ukucaba okuphezulu nokuqedwa kwendawo: Ukucaba kwendawo kukhuphukela kuzinga le-micron, kuqinisekisa ukuthintana okugcwele phakathi kwe-wafer nediski, kunciphisa ukungcoliswa kanye nokulimala.
Ukuzinza kwamakhemikhali: Ukumelana nokugqwala okuqinile, kulungele ukuhlanzwa okumanzi kanye nezinqubo zokufaka ekwenziweni kwe-semiconductor.
2. Ishubhu ye-ceramic ye-silicon carbide
- Ukumelana nokushisa okuphezulu: Ingasebenza endaweni yokushisa ephezulu ngaphezu kwe-1600 ° C isikhathi eside, ilungele inqubo yokushisa ephezulu ye-semiconductor.
Ukumelana nokugqwala okuhle kakhulu: ukumelana nama-asidi, ama-alkali kanye nezinhlobonhlobo zezinyibilikisi zamakhemikhali, ezifanele indawo yenqubo enokhahlo.
- Ukuqina okuphezulu nokumelana nokugqokwa: ukumelana nokuguguleka kwezinhlayiya nokuguga kwemishini, nwebisa impilo yesevisi.
- I-conductivity ephezulu ye-thermal kanye ne-coefficient ephansi yokwandisa ukushisa: ukushayela okusheshayo kokushisa nokuzinza kwe-dimensional, ukunciphisa ukuguqulwa noma ukuqhekeka okubangelwa ukucindezeleka okushisayo.

Ipharamitha yomkhiqizo:

Ipharamitha yethreyi ye-silicon carbide ceramic:

(Impahla)		(Iyunithi)	(sic)
(Okuqukethwe kwe-SiC)		(Wt)%	>99
(Isilinganiso sikasayizi wokusanhlamvu)		micron	4-10
(Ukuminyana)		kg/dm3	>3.14
(I-porosity ebonakalayo)		I-Vo1%	<0.5
(Vickers hardness)	I-HV 0.5	I-GPa	28
() Amandla e-Flexural (amaphuzu amathathu)	20ºC	I-MPa	450
(Amandla acindezelayo)	20ºC	I-MPa	3900
(I-Elastic Modulus)	20ºC	I-GPa	420
(Ukuphuka kokuqina)		MPa/m'%	3.5
(I-Thermal conductivity)	20°C	W/(m*K)	160
(Ukumelana)	20°C	Ohm.cm	106-108
(I-thermal expansion coefficient)	a(RT**...80ºC)	K-1*10-6	4.3
(Izinga lokushisa eliphezulu lokusebenza)		oºC	1700

Ipharamitha yeshubhu ye-silicon carbide ceramic:

Izinto	Inkomba
I-α-SIC	99% iminithi
I-Porosity ebonakalayo	16% ubuningi
Ukuminyana kwenqwaba	2.7g/cm3 iminithi
Amandla Okugoba Emazingeni Okushisa aphezulu	100 Mpa min
I-Coefficient of Thermal Expansion	K-1 4.7x10 -6
I-Coefficient of Thermal Conductivity(1400ºC)	24 W/mk
Ubukhulu. Izinga Lokushisa Lokusebenza	1650ºC

Izinhlelo zokusebenza eziyinhloko:

1. Ipuleti ye-ceramic ye-silicon carbide
- I-wafer cutting and polishing: isebenza njengeplatifomu ethwalayo ukuze kuqinisekiswe ukunemba okuphezulu nokuzinza ngesikhathi sokusika nokupholisha.
- Inqubo ye-Lithography: Iwafa igxilile emshinini we-lithography ukuze kuqinisekiswe ukuma okunembe okuphezulu ngesikhathi sokuchayeka.
- I-Chemical Mechanical Polishing (CMP) : isebenza njengenkundla yokusekela yamaphedi wokupholisha, ehlinzeka ngokucindezela okufanayo nokusabalalisa ukushisa.
2. Ishubhu ye-ceramic ye-silicon carbide
- Ishubhu yokushisa yokushisa ephezulu: isetshenziselwa imishini yokushisa ephezulu njenge-diffusion furnace kanye ne-oxidation furnace ukuthwala ama-wafers okwelashwa kwenqubo yokushisa okuphezulu.
- Inqubo ye-CVD/PVD: Njengeshubhu elithwalayo ekamelweni lokusabela, elimelana nokushisa okuphezulu namagesi agqwalayo.
- Izesekeli zemishini ye-Semiconductor: zokushintshanisa ukushisa, amapayipi egesi, njll., ukuthuthukisa ukusebenza kahle kokuphathwa kokushisa kwemishini.
I-XKH ihlinzeka ngohlu olugcwele lwezinsizakalo zangokwezifiso zamathileyi e-silicon carbide ceramic, izinkomishi zokumunca namashubhu e-silicon carbide ceramic. Amathreyi e-silicon carbide ceramic kanye nezinkomishi zokumunca, i-XKH ingenziwa ngokwezifiso ngokuya ngezidingo zamakhasimende ezinosayizi abahlukene, ubujamo nobulukhuni bobuso, futhi isekele ukwelashwa okukhethekile kokumboza, ukuthuthukisa ukumelana nokuguga nokumelana nokugqwala; Kumashubhu e-silicon carbide ceramic, i-XKH ingakwazi ukwenza ngokwezifiso ububanzi bangaphakathi obuhlukahlukene, ububanzi bangaphandle, ubude nesakhiwo esiyinkimbinkimbi (njengeshubhu elibunjiwe noma ishubhu elinombobo), futhi inikeze ukupholisha, ukumbozwa kwe-anti-oxidation nezinye izinqubo zokwelashwa kwendawo. I-XKH iqinisekisa ukuthi amakhasimende angakwazi ukusebenzisa ngokugcwele izinzuzo zokusebenza kwemikhiqizo ye-silicon carbide ceramic ukuze ahlangabezane nezidingo ezidingekayo zezinkambu zokukhiqiza ezisezingeni eliphezulu njengama-semiconductors, amaledi nama-photovoltaics.