Ithreyi ye-Silicon Carbide Ceramic - Amathreyi Aqinile, Asebenza Kakhulu Okusetshenziswa Kwezinto Ezishisayo Namakhemikhali

Ithreyi ye-Silicon Carbide Ceramic - Amathreyi Aqinile, Asebenza Kakhulu Wezicelo Ezishisayo Nezamakhemikhali Isithombe Esifakiwe

Incazelo emfushane:

Thumela i-imeyili kithi

Izici

Umdwebo onemininingwane

Isingeniso Somkhiqizo

Amathreyi e-Silicon carbide (SiC) e-ceramic ayizingxenye ezisebenza kakhulu ezisetshenziswa kakhulu endaweni enezinga lokushisa eliphezulu, enomthwalo omkhulu, kanye nezindawo zezimboni ezinokhahlo lwamakhemikhali. Akhiwe ngezinto ezithuthukisiwe ze-silicon carbide ceramic, lawa mathreyi aklanyelwe ukuletha amandla akhethekile wemishini, ukuqhutshwa kwe-thermal okuphezulu, nokumelana okuhle kakhulu nokushaqeka okushisayo, i-oxidation, nokugqwala. Imvelo yabo eqinile ibenza bafaneleke kakhulu ekusetshenzisweni kwezimboni ezahlukene okuhlanganisa ukukhiqizwa kwe-semiconductor, ukucubungula i-photovoltaic, ukucwiliswa kwezingxenye ze-powder metallurgy, nokuningi.

Amathreyi e-silicon carbide asebenza njengabathwali ababalulekile noma abasekela phakathi nezinqubo zokwelapha ezishisayo lapho ukunemba kobukhulu, ubuqotho besakhiwo, nokumelana namakhemikhali kubalulekile. Uma kuqhathaniswa nezinto zobumba zendabuko ezifana ne-alumina noma i-mullite, amathreyi e-SiC anikezela ngokusebenza okuphezulu kakhulu, ikakhulukazi ezimeni ezibandakanya ukuhamba kwamabhayisikili okushisayo okuphindaphindiwe kanye nomkhathi onolaka.

Inqubo Yokukhiqiza Nokubunjwa Kwezinto

Ukukhiqizwa kwamathreyi e-ceramic e-SiC kufaka phakathi ubunjiniyela obunembayo kanye nobuchwepheshe be-sintering obuthuthukisiwe ukuze kuqinisekiswe ukuminyana okuphezulu, i-microstructure efanayo, nokusebenza okungaguquki. Izinyathelo ezijwayelekile zihlanganisa:

Ukukhethwa Kwezinto Ezingavuthiwe
I-silicon carbide powder ye-high-purity (≥99%) ikhethiwe, ngokuvamile enokulawula usayizi wezinhlayiyana ezithile kanye nokungcola okuncane ukuze kuqinisekiswe izakhiwo eziphezulu zemishini nezokushisa.
Izindlela Zokwakha
Ngokuya ngokucaciswa kwethreyi, izindlela ezahlukahlukene zokwakha zisetshenziswa:
- I-Cold Isostatic Pressing (CIP) ye-high-density, ama-compact compacts
- Ukukhishwa kwe-extrusion noma ukushelela komumo oyinkimbinkimbi
- Ukubumba komjovo kumajiyometri anemininingwane, anemininingwane
Sintering Techniques
Umzimba oluhlaza ushiswa emazingeni okushisa aphezulu kakhulu, ngokuvamile ebangeni elingu-2000°C, ngaphansi kwe-inert noma i-vacuum atmospheres. Izindlela ezijwayelekile ze-sintering zifaka:
- I-Reaction Bonded SiC (RB-SiC)
- I-Pressureless Sintered SiC (SSiC)
- I-Recrystallized SiC (RBSiC)
  Indlela ngayinye iphumela ezintweni ezibonakalayo ezihluke kancane, ezifana ne-porosity, amandla, kanye ne-thermal conductivity.
Precision Machining
Ngemuva kokucwiliswa, amathreyi enziwa ngomshini ukuze afinyelele ukubekezelela okuqinile, ukuqedwa kwendawo okubushelelezi, kanye nokucaba. Ukwelapha okungaphezulu njengokugxusha, ukugaya, nokupholisha kungasetshenziswa ngokuya ngezidingo zamakhasimende.

Izicelo Ezijwayelekile

Amathreyi e-silicon carbide ceramic asetshenziswa ezimbonini ezahlukahlukene ngenxa yokuguquguquka kwawo nokuqina. Izicelo ezijwayelekile zifaka:

Imboni yeSemiconductor
Amathreyi e-SiC asetshenziswa njengabathwali ngesikhathi se-wafer annealing, diffusion, oxidation, epitaxy, kanye nezinqubo zokufakelwa. Ukuzinza kwabo kuqinisekisa ukusatshalaliswa kwezinga lokushisa okufanayo kanye nokungcola okuncane.
Imboni ye-Photovoltaic (PV).
Ekukhiqizweni kwamaseli elanga, amathreyi e-SiC asekela ama-silicon ingots noma ama-wafers ngesikhathi sokusatshalaliswa kwezinga lokushisa eliphezulu nezinyathelo ze-sintering.
I-Powder Metallurgy kanye ne-Ceramics
Isetshenziselwa izingxenye ezisekelayo ngesikhathi sokucwiliswa kwezimpushana zensimbi, izitsha zobumba, nezinto eziyinhlanganisela.
Ingilazi kanye namaphaneli wokubonisa
Kusetshenziswa njengamathreyi omlilo noma izinkundla zokwenza izibuko ezikhethekile, ama-LCD substrates, noma ezinye izinto ezibonakalayo.
Ukucutshungulwa Kwamakhemikhali kanye Nezithando Zokushisa Ezishisayo
Isebenza njengezinkampani zenethiwekhi ezimelana nokugqwala kuma-reactor amakhemikhali noma njengamathreyi asekelayo ashisayo kuma-vacuum nama-controlled-atmosphere.

Izici Zokusebenza Ezibalulekile

✅I-Thermal Stability Eyingqayizivele
Imelana nokusetshenziswa okuqhubekayo emazingeni okushisa afika ku-1600–2000°C ngaphandle kokungqubuzana noma ukuwohloka.
✅Amandla Emishini Ephakeme
Inikeza amandla aphezulu okuguquguquka (imvamisa>350 MPa), iqinisekisa ukuqina kwesikhathi eside ngisho nangaphansi kwezimo eziphakeme zomthwalo.
✅I-Thermal Shock Resistance
Ukusebenza okuhle kakhulu ezindaweni ezinokushintshashintsha kwezinga lokushisa okusheshayo, okunciphisa ingozi yokuqhekeka.
✅Ukumelana nokugqwala kanye ne-Oxidation
Izinzile ngokwekhemikhali kuma-asidi amaningi, ama-alkali, namagesi e-oxidizing/ehlisayo, alungele izinqubo zamakhemikhali ezinokhahlo.
✅Ukunemba kweDimensional kanye neFlatness
Ifakwe ngokunemba okuphezulu, iqinisekisa ukucutshungulwa okufanayo nokuhambisana namasistimu azenzakalelayo.
✅Isikhathi Eside Sempilo Nokusebenza Kahle Kwezindleko
Amazinga aphansi okushintsha kanye nezindleko zokunakekela ezincishisiwe akwenza kube yisixazululo esingabizi kakhulu ngokuhamba kwesikhathi.

Imininingwane Yezobuchwepheshe

Ipharamitha	Inani Elijwayelekile
Okubalulekile	I-Reaction Bonded SiC / Sintered SiC
Ubukhulu. Izinga Lokushisa Lokusebenza	1600–2000°C
Amandla e-Flexural	≥350 MPa
Ukuminyana	≥3.0 g/cm³
I-Thermal Conductivity	~120–180 W/m·K
I-Surface Flatness	≤ 0.1 mm
Ubukhulu	5–20 mm (kungenziwa ngokwezifiso)
Ubukhulu	Okujwayelekile: 200×200 mm, 300×300 mm, njll.
I-Surface Qeda	Ifakwe ngomshini, iphucuziwe (ngesicelo)

Imibuzo Evame Ukubuzwa (FAQ)

I-Q1: Ingabe amathreyi e-silicon carbide angasetshenziswa kuma-vacuum furnaces?
A:Yebo, amathreyi e-SiC alungele izindawo ezingenalutho ngenxa yokuphuma kwawo okuphansi, ukuqina kwamakhemikhali, nokumelana nezinga lokushisa eliphezulu.

Q2: Ingabe umumo ngokwezifiso noma izikhala ziyatholakala?
A:Nakanjani. Sinikezela ngezinsizakalo zokwenza ngokwezifiso ezihlanganisa usayizi wethreyi, umumo, izici ezingaphezulu (isb., imifantu, izimbobo), nokupholishwa kwendawo ukuze kuhlangatshezwane nezimfuneko ezihlukile zamakhasimende.

Q3: I-SiC iqhathaniswa kanjani namathreyi e-alumina noma e-quartz?
A:I-SiC inamandla aphakeme, i-thermal conductivity engcono, nokumelana okuphakeme nokushaqeka okushisayo nokugqwala kwamakhemikhali. Ngenkathi i-alumina ibiza kakhulu, i-SiC isebenza kangcono ezindaweni ezidinga kakhulu.

Q4: Ingabe kukhona ukujiya okujwayelekile kwalawa mathreyi?
A:Ubukhulu buvamise ukuba kububanzi obungu-5–20 mm, kodwa singabulungisa ngokusekelwe kuhlelo lwakho lokusebenza nezimfuneko zokuthwala umthwalo.

Q5: Isiphi isikhathi esijwayelekile sokuhola samathreyi e-SiC enziwe ngokwezifiso?
A:Izikhathi zokuhola ziyahlukahluka kuye ngobunkimbinkimbi kanye nenani kodwa ngokuvamile zisukela emavikini angu-2 kuye kwangu-4 kuma-oda angokwezifiso.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ukukhiqiza, nokudayiswa kwengilazi ekhethekile yokubona nezinto ezintsha zekristalu. Imikhiqizo yethu isebenza ngogesi obonakalayo, ugesi wabathengi, kanye nezempi. Sinikezela ngezinto ezibonakalayo ze-Sapphire, izembozo zamalensi omakhalekhukhwini, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, namawafa ekristalu e-semiconductor. Ngobungcweti abanamakhono nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungajwayelekile, sihlose ukuba yibhizinisi elihamba phambili le-optoelectronic materials high-tech.