I-Silicon Carbide Cantilever Paddle (I-SiC Cantilever Paddle)

Isithombe Esifakiwe Se-Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)

Incazelo emfushane:

Sithumelele i-imeyili

Izici

Umdwebo Oningiliziwe

Ukubuka Konke Komkhiqizo

I-paddle ye-silicon carbide cantilever, eyenziwe nge-silicon carbide esebenza kahle kakhulu (RBSiC), iyisici esibalulekile esisetshenziswa ezinhlelweni zokulayisha nokuphatha i-wafer zezinhlelo zokusebenza ze-semiconductor kanye ne-photovoltaic.
Uma kuqhathaniswa nama-quartz noma ama-graphite paddles endabuko, ama-SiC cantilever paddles anikeza amandla aphezulu okusebenza, ubulukhuni obuphezulu, ukwanda okuphansi kokushisa, kanye nokumelana nokugqwala okuvelele. Agcina ukuqina kwesakhiwo okuhle kakhulu ngaphansi kwamazinga okushisa aphezulu, ahlangabezana nezidingo eziqinile zama-wafers amakhulu, impilo yenkonzo ende, kanye nokungcola okuphansi kakhulu.

Ngokuthuthuka okuqhubekayo kwezinqubo ze-semiconductor kuya kuma-wafer diameter amakhulu, ukukhishwa okuphezulu, kanye nezindawo zokucubungula ezihlanzekile, ama-paddle e-SiC cantilever athathe indawo yezinto ezivamile kancane kancane, aba ukukhetha okuthandwayo kwezitofu zokusabalalisa, i-LPCVD, kanye nemishini ehlobene nokushisa okuphezulu.

Izici Zomkhiqizo

Ukuqina Okuhle Kakhulu Kokushisa Okuphezulu
- Isebenza ngokuthembekile ku-1000–1300℃ ngaphandle kokuguquka.
- Izinga lokushisa eliphezulu lesevisi lifinyelela ku-1380℃.
Amandla Okuthwala Umthwalo Ophezulu
- Amandla okugoba afinyelela ku-250–280 MPa, aphezulu kakhulu kunama-quartz paddles.
- Iyakwazi ukuphatha ama-wafer amakhulu (300 mm nangaphezulu).
Impilo Yesevisi Eyengeziwe Nokulungiswa Okuphansi
- I-coefficient yokwandisa ukushisa ephansi (4.5 × 10⁻⁶ K⁻¹), ihambisana kahle nezinto zokumboza ze-LPCVD.
- Kunciphisa imifantu kanye nokuxebuka okubangelwa ukucindezeleka, kwandisa kakhulu imijikelezo yokuhlanza nokulungisa.
Ukumelana Nokugqwala Nobumsulwa
- Ukumelana okuhle kakhulu nama-asidi nama-alkali.
- Isakhiwo esincane esiminyene esinezimbobo ezivulekile <0.1%, okunciphisa ukukhiqizwa kwezinhlayiya kanye nokukhishwa kokungcola.
Umklamo Ohambisana Nokuzenzakalela
- I-geometry eqinile yesigaba esinqamulayo enokunemba okuphezulu.
- Ihlangana kahle nezinhlelo zokulayisha nokulayisha i-wafer yamarobhothi, okuvumela ukukhiqizwa okuzenzakalelayo ngokuphelele.

Izakhiwo Zomzimba Nezamakhemikhali

Into	Iyunithi	Idatha
Izinga Lokushisa Eliphezulu Lesevisi	℃	1380
Ubuningi	g/cm³	3.04 – 3.08
Vula i-Porosity	%	< 0.1
Amandla Okugoba	I-MPa	250 (20℃), 280 (1200℃)
I-Modulus ye-Elasticity	I-GPa	330 (20℃), 300 (1200℃)
Ukuqhuba Okushisayo	W/m·K	45 (1200℃)
Isilinganiso Sokwanda Kwe-Thermal	K⁻¹×10⁻⁶	4.5
Ukuqina kukaVickers	I-HV2	≥ 2100
Ukumelana ne-Acid/Alkaline	-	Kuhle kakhulu

Ubude obujwayelekile:2378 mm, 2550 mm, 2660 mm
Ubukhulu obungokwezifiso buyatholakala uma uceliwe

Izicelo

Imboni Ye-semiconductor
- I-LPCVD (Ukukhishwa Komusi Wekhemikhali Ocindezelwe Kancane)
- Izinqubo zokusabalalisa (i-phosphorus, i-boron, njll.)
- Ukushiswa kwe-thermal
Imboni ye-Photovoltaic
- Ukusabalala kanye nokumbozwa kwe-polysilicon kanye ne-monocrystalline wafer
- Ukufakwa kwe-annealing nokudlulisa ukushisa okuphezulu
Ezinye Izinkambu
- Izindawo ezigqwala ezinokushisa okuphezulu
- Izinhlelo zokuphatha i-wafer ezinembile ezidinga impilo ende kanye nokungcola okuncane

Izinzuzo Zamakhasimende

Izindleko Zokusebenza Ezincishisiwe– Isikhathi eside sokuphila uma siqhathaniswa nama-quartz paddles, okunciphisa isikhathi sokungasebenzi kanye nemvamisa yokushintshwa.
Inzuzo Ephakeme– Ukungcola okuphansi kakhulu kuqinisekisa ukuhlanzeka kwendawo ye-wafer futhi kunciphisa amazinga okukhubazeka.
Ubufakazi Besikhathi Esizayo– Iyahambisana nosayizi omkhulu we-wafer kanye nezinqubo ze-semiconductor zesizukulwane esilandelayo.
Ukukhiqiza Okuthuthukisiwe- Ihambisana ngokugcwele nezinhlelo zokwenza izinto nge-robotic, ezisekela ukukhiqizwa okuphezulu.

Imibuzo Evame Ukubuzwa - I-Silicon Carbide Cantilever Paddle

Q1: Iyini i-paddle ye-silicon carbide cantilever?
A: Kuyi-wafer support kanye ne-handling component eyenziwe nge-reaction-bonded silicon carbide (RBSiC). Isetshenziswa kabanzi kuma-diffusion furnaces, LPCVD, kanye nezinye izinqubo ze-semiconductor kanye ne-photovoltaic ezishisa kakhulu.

Umbuzo 2: Kungani ukhethe i-SiC kune-quartz paddles?
A: Uma kuqhathaniswa nama-quartz paddles, ama-SiC paddles anikeza:

Amandla aphezulu okusebenza ngomshini kanye nomthamo wokuthwala umthwalo
Ukuqina okungcono kokushisa emazingeni okushisa afinyelela ku-1380℃
Impilo yesevisi ende kakhulu kanye nemijikelezo yokulungisa encishisiwe
Ukukhiqizwa kwezinhlayiya okuphansi kanye nengozi yokungcola
Ukuhambisana nosayizi omkhulu we-wafer (300 mm nangaphezulu)

Umbuzo 3: Yimaphi amasayizi e-wafer angasekelwa yi-paddle ye-SiC cantilever?
A: Ama-paddle ajwayelekile ayatholakala ezinhlelweni zesithando somlilo esingu-2378 mm, 2550 mm, kanye no-2660 mm. Ubukhulu obufanele buyatholakala ukusekela ama-wafer afinyelela ku-300 mm nangaphezulu.

Mayelana NATHI

I-XKH igxile ekuthuthukisweni kobuchwepheshe obuphezulu, ekukhiqizweni, nasekuthengisweni kwengilazi ekhethekile ye-optical kanye nezinto ezintsha zekristalu. Imikhiqizo yethu ihlinzeka nge-optical electronics, i-consumer electronics, kanye nezempi. Sinikeza izingxenye ze-optical ze-Sapphire, izembozo zelensi yeselula, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kanye nama-semiconductor crystal wafers. Ngobuchwepheshe obunekhono kanye nemishini esezingeni eliphezulu, sihamba phambili ekucutshungulweni komkhiqizo okungewona ojwayelekile, sihlose ukuba yibhizinisi elihamba phambili lezinto ze-optoelectronic tech.