English

I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers SiC Film KU-Silicon

I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers Ifilimu ye-SiC KU-Silicon Isithombe Esifakiwe
  • I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers SiC Film KU-Silicon
  • I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers SiC Film KU-Silicon
  • I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers SiC Film KU-Silicon

Incazelo emfushane:

Ama-wafer e-Silicon Carbide on Insulator (SICOI) ayizinhlayiya zesizukulwane esilandelayo ze-semiconductor ezihlanganisa izakhiwo zomzimba neze-elekthronikhi eziphezulu ze-silicon carbide (SiC) nezici ezivelele zokuhlukaniswa kukagesi zesendlalelo se-insulating buffer, njenge-silicon dioxide (SiO₂) noma i-silicon nitride (Si₃N₄). I-wafer ejwayelekile ye-SICOI iqukethe isendlalelo esincane se-epitaxial SiC, ifilimu yokuvimbela ephakathi, kanye ne-substrate eyisisekelo esekelayo, engaba yi-silicon noma i-SiC.


Izici

Umdwebo Oningiliziwe

I-SICOI 11_副本
I-SICOI 14_副本2

Ukwethulwa kwama-wafer e-Silicon Carbide on Insulator (SICOI)

Ama-wafer e-Silicon Carbide on Insulator (SICOI) ayizinhlayiya zesizukulwane esilandelayo ze-semiconductor ezihlanganisa izakhiwo zomzimba neze-elekthronikhi eziphezulu ze-silicon carbide (SiC) nezici ezivelele zokuhlukaniswa kukagesi zesendlalelo se-insulating buffer, njenge-silicon dioxide (SiO₂) noma i-silicon nitride (Si₃N₄). I-wafer ejwayelekile ye-SICOI iqukethe isendlalelo esincane se-epitaxial SiC, ifilimu yokuvimbela ephakathi, kanye ne-substrate eyisisekelo esekelayo, engaba yi-silicon noma i-SiC.

Lesi sakhiwo esihlanganisiwe senzelwe ukuhlangabezana nezidingo eziqinile zamadivayisi kagesi anamandla aphezulu, amaza aphezulu, kanye nokushisa okuphezulu. Ngokufaka ungqimba lokuvikela, ama-wafer e-SICOI anciphisa amandla okusebenzisa izinambuzane futhi acindezele imisinga yokuvuza, ngaleyo ndlela aqinisekise amaza aphezulu okusebenza, ukusebenza kahle okungcono, kanye nokuphathwa kokushisa okuthuthukisiwe. Lezi zinzuzo ziwenza abe yigugu kakhulu emikhakheni efana nezimoto zikagesi, ingqalasizinda yokuxhumana ye-5G, izinhlelo zezindiza, ama-electronics e-RF athuthukile, kanye nobuchwepheshe bezinzwa ze-MEMS.

Isimiso Sokukhiqiza Sama-SICOI Wafers

Ama-wafer e-SICOI (Silicon Carbide on Insulator) akhiqizwa nge-Advancedinqubo yokubopha kanye nokunciphisa i-wafer:

  1. Ukukhula Kwe-SiC Substrate– I-wafer ye-SiC ye-single-crystal esezingeni eliphezulu (4H/6H) ilungiswa njengento yokunikela.

  2. Ukufakwa Kwezingqimba Zokuvikela– Ifilimu yokuvikela (i-SiO₂ noma i-Si₃N₄) yakhiwa ku-wafer yokuthwala (i-Si noma i-SiC).

  3. Ukubopha i-Wafer– I-SiC wafer kanye ne-carrier wafer kuhlanganiswa ndawonye ngaphansi kosizo lokushisa okuphezulu noma nge-plasma.

  4. Ukuncibilikisa Nokupholisha– I-SiC donor wafer incishisiwe ibe ama-micrometer ambalwa futhi ipholishwe ukuze kufezwe ubuso obubushelelezi ngokwe-athomu.

  5. Ukuhlolwa Kokugcina– I-wafer ye-SICOI ephelele ihlolwa ukufana kobukhulu, ukujiya kobuso, kanye nokusebenza kokuvikela.

Ngale nqubo,isendlalelo se-SiC esisebenzayo esincaneenezakhiwo zikagesi nezokushisa ezinhle kakhulu ihlanganiswa nefilimu yokuvikela kanye nesisekelo sokusekela, okudala ipulatifomu esebenza kahle kakhulu yamadivayisi kagesi wesizukulwane esilandelayo kanye ne-RF.

I-SiCOI

Izinzuzo Eziyinhloko Zama-SICOI Wafers

Isigaba Sesici Izici Zobuchwepheshe Izinzuzo Eziyinhloko
Isakhiwo Sezinto Isendlalelo esisebenzayo esingu-4H/6H-SiC + ifilimu yokuvikela (SiO₂/Si₃N₄) + Si noma isithwali se-SiC Ifinyelela ukuhlukaniswa okunamandla kagesi, inciphisa ukuphazamiseka kwezinambuzane
Izakhiwo Zikagesi Amandla aphezulu okuqhekeka (>3 MV/cm), ukulahleka okuphansi kwe-dielectric Kwenzelwe ukusebenza kwe-voltage ephezulu kanye ne-frequency ephezulu
Izakhiwo Zokushisa Ukushisa okufika ku-4.9 W/cm·K, okuzinzile ngaphezu kuka-500°C Ukushabalalisa ukushisa okuphumelelayo, ukusebenza okuhle kakhulu ngaphansi kwemithwalo enzima yokushisa
Izakhiwo Zemishini Ubulukhuni obukhulu (Mohs 9.5), i-coefficient ephansi yokwanda kokushisa Iqinile ekulweni nokucindezeleka, ithuthukisa isikhathi eside sedivayisi
Ikhwalithi Yomphezulu Ubuso obubushelelezi kakhulu (Ra <0.2 nm) Ikhuthaza i-epitaxy engenamaphutha kanye nokwakhiwa kwamadivayisi okuthembekile
Ukuvikela Ukumelana >10¹⁴ Ω·cm, ukuvuza okuphansi Ukusebenza okuthembekile ku-RF kanye nezicelo zokuhlukanisa ezinamandla aphezulu
Usayizi kanye nokwenza ngokwezifiso Itholakala ngamafomethi angu-4, 6, kanye no-8-intshi; Ubukhulu be-SiC bungu-1–100 μm; ukuvikela ukushisa okungu-0.1–10 μm Idizayini eguquguqukayo yezidingo ezahlukene zohlelo lokusebenza

 

下载

Izindawo Zokusebenza Eziyinhloko

Umkhakha Wezicelo Amacala Okusetshenziswa Okuvamile Izinzuzo Zokusebenza
Amandla kagesi Ama-inverter e-EV, iziteshi zokushaja, amadivayisi kagesi ezimboni I-voltage ephezulu yokuqhekeka, ukulahlekelwa kokushintsha okuncishisiwe
I-RF kanye ne-5G Ama-amplifier kagesi esiteshini esiyisisekelo, izingxenye zamagagasi angamamilimitha Ama-parasites aphansi, asekela imisebenzi yebanga le-GHz
Izinzwa ze-MEMS Izinzwa zokucindezela zemvelo ezinzima, i-MEMS yebanga lokuzulazula Ukuqina okuphezulu kokushisa, ukumelana nemisebe
Izindiza kanye Nokuvikela Ukuxhumana kwesathelayithi, amamojula wamandla e-avionics Ukuthembeka emazingeni okushisa aphezulu kanye nokuchayeka emisebeni
Igridi ehlakaniphile Ama-converter e-HVDC, ama-solid-state circuit breakers Ukushisa okuphezulu kunciphisa ukulahleka kwamandla
Optoelectronics Ama-LED e-UV, ama-substrate e-laser Ikhwalithi ephezulu yekristalu isekela ukukhishwa kokukhanya okusebenzayo

Ukwenziwa kwe-4H-SiCOI

Ukukhiqizwa kwama-wafer e-4H-SiCOI kufezwa ngokusebenzisaizinqubo zokubopha kanye nokunciphisa i-wafer, okuvumela izixhumi zokuvikela ezisezingeni eliphezulu kanye nezendlalelo ezisebenzayo ze-SiC ezingenamaphutha.

  • a: Isimiso sokwenziwa kwepulatifomu yezinto ze-4H-SiCOI.

  • b: Isithombe se-wafer engu-4-intshi engu-4H-SiCOI esebenzisa ukubopha nokunciphisa; izindawo zokukhubazeka zimakwe.

  • c: Ukufana kobukhulu be-substrate ye-4H-SiCOI.

  • d: Isithombe esibonakalayo sedayi ye-4H-SiCOI.

  • e: Ukugeleza kwenqubo yokwakha i-resonator ye-microdisk ye-SiC.

  • f: I-SEM ye-resonator ye-microdisk ephelele.

  • g: I-SEM ekhulisiwe ekhombisa uhlangothi lwe-resonator; isithombe se-AFM sibonisa ukushelela kobuso obuncane.

  • h: I-SEM enezingxenye eziphambene ekhombisa indawo engaphezulu emise okwe-parabolic.

Imibuzo Evame Ukubuzwa Ngama-SCOI Wafers

Umbuzo 1: Yiziphi izinzuzo ama-wafer e-SICOI anazo ngaphezu kwama-wafer e-SiC endabuko?
A1: Ngokungafani nama-substrate ajwayelekile e-SiC, ama-wafer e-SICOI afaka ungqimba oluvikelayo olunciphisa amandla e-parasitic kanye nemisinga yokuvuza, okuholela ekusebenzeni kahle okuphezulu, impendulo engcono yemvamisa, kanye nokusebenza kahle kokushisa okuphezulu.

Q2: Yimaphi amasayizi e-wafer avame ukutholakala?
A2: Ama-wafer e-SICOI avame ukukhiqizwa ngamafomethi angu-4 intshi, angu-6 intshi, kanye no-8 intshi, ane-SiC eyenziwe ngokwezifiso kanye nobukhulu besendlalelo sokuvikela obutholakala kuye ngezidingo zedivayisi.

Umbuzo 3: Yiziphi izimboni ezizuza kakhulu kuma-wafer e-SICOI?
A3: Izimboni ezibalulekile zifaka phakathi ama-electronic anamandla ezimotweni zikagesi, ama-electronic e-RF amanethiwekhi e-5G, ama-MEMS ezinzwa zezindiza, kanye nama-optoelectronics afana nama-UV LED.

UMBUZO 4: Isendlalelo sokuvikela sithuthukisa kanjani ukusebenza kwedivayisi?
A4: Ifilimu yokuvikela ugesi (i-SiO₂ noma i-Si₃N₄) ivimbela ukuvuza kwamanje futhi inciphise ukukhuluma ngogesi, ivumela ukukhuthazela okuphezulu kwamandla kagesi, ukushintsha okusebenzayo, kanye nokulahlekelwa ukushisa okuncishisiwe.

Umbuzo 5: Ingabe ama-wafer e-SICOI afanele ukusetshenziswa ezindaweni zokushisa okuphezulu?
A5: Yebo, ngokushisa okuphezulu kanye nokumelana okungaphezu kuka-500°C, ama-wafer e-SICOI aklanyelwe ukusebenza ngokuthembekile ngaphansi kokushisa okukhulu nasezindaweni ezinzima.

Q6: Ingabe ama-wafer e-SICOI angenziwa ngezifiso?
A6: Impela. Abakhiqizi banikeza imiklamo eyenzelwe wena ukuze kube nobukhulu obuthile, amazinga okusebenzisa izidakamizwa, kanye nokuhlanganiswa kwe-substrate ukuze kuhlangatshezwane nezidingo ezahlukene zocwaningo kanye nezezimboni.

  • Okwedlule:
  • Olandelayo:

    • Imikhiqizo Ehlobene

    Bhala umlayezo wakho lapha bese uwuthumela kithi
    Cindezela u-enter ukuze useshe noma u-ESC ukuze uvale