I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo Lokuqina Okuphezulu Ukumelana Nokugqwala Ibanga Eliphezulu Lokupholisha

I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo Lokuqina Okuphezulu Ukumelana Nokugqwala Ukupholisha Okuphezulu Kwebanga Eliphezulu Isithombe Esifakiwe

Incazelo emfushane:

Ama-wafer e-silicon carbide ayizinto ezisebenza kahle kakhulu ezisetshenziswa ekukhiqizweni kwamadivayisi kagesi. Enziwe ngesendlalelo se-silicon carbide ku-dome ye-silicon crystal futhi atholakala ngama-grade ahlukene, izinhlobo kanye nokuqedwa kobuso. Ama-wafer anobucaba be-Lambda/10, okuqinisekisa ikhwalithi ephezulu kanye nokusebenza kwamadivayisi kagesi enziwe ngama-wafer. Ama-wafer e-silicon carbide afanele ukusetshenziswa kuma-electronics anamandla, ubuchwepheshe be-LED kanye nezinzwa ezithuthukisiwe. Sihlinzeka ngama-wafer e-silicon carbide asezingeni eliphezulu (sic) ezimbonini ze-electronics kanye ne-photonics.

Sithumelele i-imeyili

Izici

Okulandelayo yizici ze-silicon carbide wafer

1. Ukushisa okuphezulu: Ukushisa okuphezulu kwama-wafer e-SIC kuphakeme kakhulu kunokwe-silicon, okusho ukuthi ama-wafer e-SIC angasusa ukushisa ngempumelelo futhi afanele ukusebenza ezindaweni ezinokushisa okuphezulu.
2. Ukuhamba kwama-electron okuphezulu: Ama-wafer e-SIC anokuhamba kwama-electron okuphezulu kune-silicon, okuvumela amadivayisi e-SIC ukuthi asebenze ngesivinini esiphezulu.
3. I-voltage ephezulu yokuqhekeka: Izinto ze-SIC wafer zine-voltage ephezulu yokuqhekeka, okwenza zifaneleke ukukhiqiza amadivayisi e-semiconductor ane-voltage ephezulu.
4. Ukuqina okuphezulu kwamakhemikhali: Ama-SIC wafers anokumelana okunamandla kokugqwala kwamakhemikhali, okusiza ukuthuthukisa ukuthembeka nokuqina kwedivayisi.
5. Igebe lebhendi elibanzi: Ama-wafer e-SIC anegebe lebhendi elibanzi kune-silicon, okwenza amadivayisi e-SIC abe ngcono futhi azinze kakhudlwana emazingeni okushisa aphezulu.

I-silicon carbide wafer inezinhlelo zokusebenza eziningana

1. Insimu yemishini: amathuluzi okusika nezinto zokugaya; Izingxenye nama-bushings angagugi; Ama-valve ezimboni kanye nezimbozo; Ama-Bearings namabhola
2. Insimu yamandla kagesi: amadivayisi e-semiconductor yamandla; Isici se-microwave esivame kakhulu; Ama-elekthronikhi anamandla aphezulu kanye namandla okushisa aphezulu; Izinto zokuphatha ukushisa
3. Imboni yamakhemikhali: i-reactor yamakhemikhali kanye nemishini; Amapayipi amelana nokugqwala kanye namathangi okugcina; Ukusekelwa kwe-catalyst yamakhemikhali
4. Umkhakha wamandla: izingxenye ze-turbine yegesi kanye ne-turbocharger; Ingqikithi yamandla enuzi kanye nezingxenye zesakhiwo izingxenye zamaseli kaphethiloli ashisa kakhulu
5. Isikhala Sezindiza: izinhlelo zokuvikela ukushisa zemicibisholo nezimoto zasemkhathini; Ama-blade e-turbine enjini ye-Jet; Inhlanganisela Ethuthukisiwe
6. Ezinye izindawo: Izinzwa zokushisa okuphezulu kanye nama-thermopile; Ama-dies namathuluzi enqubo yokusila; Ukugaya nokupholisha kanye namasimu okusika
I-ZMKJ can inikeza i-single crystal SiC wafer (Silicon Carbide) yekhwalithi ephezulu embonini ye-elekthronikhi neye-optoelectronic. I-SiC wafer iyinto yesizukulwane esilandelayo ye-semiconductor, enezakhiwo zikagesi ezihlukile kanye nezakhiwo ezinhle kakhulu zokushisa, uma iqhathaniswa ne-silicon wafer kanye ne-GaAs wafer, i-SiC wafer ifaneleka kakhulu ekusetshenzisweni kwedivayisi yokushisa okuphezulu kanye namandla aphezulu. I-SiC wafer inganikezwa ngobubanzi obungu-2-6 intshi, kokubili uhlobo lwe-4H kanye nolwe-6H SiC, uhlobo lwe-N, olufakwe i-nitrogen, kanye nohlobo lwe-semi-insulating olutholakalayo. Sicela usithinte ukuze uthole ulwazi olwengeziwe lomkhiqizo.
Ifektri yethu inemishini yokukhiqiza ethuthukisiwe kanye nethimba lobuchwepheshe, elingenza ngezifiso imininingwane ehlukahlukene, ubukhulu kanye nezimo ze-wafer ye-SiC ngokuya ngezidingo ezithile zamakhasimende.