I-SiC substrate P kanye ne-D grade Dia50mm 4H-N 2inch

Izici eziyinhloko zama-wafers e-SiC mosfet angu-2inch yilezi ezilandelayo;.

Ukusebenza Okuphezulu Kokushisa: Kuqinisekisa ukuphathwa kokushisa okusebenzayo, kuthuthukisa ukuthembeka kwedivayisi nokusebenza kwayo

Ukuhamba Okuphezulu Kwe-Electron: Ivumela ukushintsha kwe-elekthronikhi okusheshayo, okulungele izinhlelo zokusebenza ezivame kakhulu

Ukuzinza Kwamakhemikhali: Kugcina ukusebenza kahle ngaphansi kwezimo ezimbi kakhulu isikhathi sokuphila kwedivayisi

Ukuhambisana: Kuyahambisana nokuhlanganiswa kwe-semiconductor okukhona kanye nokukhiqizwa ngobuningi

Ama-wafer e-SiC mosfet angu-2 intshi, 3 intshi, 4 intshi, 6 intshi, 8 intshi asetshenziswa kabanzi kulezi zindawo ezilandelayo: amamojula kagesi ezimotweni zikagesi, ahlinzeka ngezinhlelo zamandla ezizinzile nezisebenzayo, izinhlelo zamandla avuselelekayo ezitha, ukwenza ngcono ukuphathwa kwamandla kanye nokusebenza kahle kokuguqulwa kwamandla,

I-SiC wafer kanye ne-Epi-layer wafer ye-satellite kanye ne-aerospace electronics, okuqinisekisa ukuxhumana okuthembekile kwemvamisa ephezulu.

Izinhlelo zokusebenza ze-optoelectronic zama-laser nama-LED asebenza kahle kakhulu, ezihlangabezana nezidingo zokukhanya okuthuthukisiwe nobuchwepheshe bokubonisa.

Ama-substrate ethu e-SiC wafers SiC ayisinqumo esifanele samadivayisi kagesi namadivayisi e-RF, ikakhulukazi lapho kudingeka khona ukuthembeka okuphezulu nokusebenza okuhle kakhulu. Iqoqo ngalinye lama-wafers lihlolwa kanzima ukuqinisekisa ukuthi lihlangabezana nezindinganiso zekhwalithi ephezulu.

Ama-wafer ethu e-SiC angu-2inch, 3inch, 4inch, 6inch, 8inch 4H-N uhlobo lwe-D-grade kanye ne-P-grade ayisinqumo esifanele sezinhlelo zokusebenza ze-semiconductor ezisebenza kahle kakhulu. Ngekhwalithi yekristalu eyingqayizivele, ukulawula ikhwalithi okuqinile, izinsizakalo zokwenza ngokwezifiso, kanye nohlu olubanzi lwezinhlelo zokusebenza, singahlela nokwenza ngokwezifiso ngokwezidingo zakho. Imibuzo yamukelekile!