I-SiC substrate P kanye ne-D grade Dia50mm 4H-N 2inch

Incazelo emfushane:

I-Silicon carbide (SiC) iyinhlanganisela kanambambili yeqembu IV-IV, iyimpahla ye-semiconductor.yakhiwe nge-silicon emsulwa kanye nekhabhoni emsulwa. I-nitrogen noma i-phosphorus ingafakwa ku-SIC ukuze kwakheke ama-semiconductors ohlobo lwe-n, noma i-beryllium, i-aluminium, noma i-gallium ingafakwa i-doped ukuze kwakhe ama-semiconductors ohlobo lwe-p. Ine-thermal conductivity ephezulu, ukuhamba kwe-electron ephezulu, ukwehla kwamandla kagesi aphezulu, ukuzinza kwamakhemikhali, nokuhambisana, iqinisekisa ukuphathwa kahle kwe-thermal, ithuthukisa ukuthembeka nokusebenza kwedivayisi, ivumela ukushintsha kwe-elekthronikhi okunesivinini esiphezulu kulungele izinhlelo zokusebenza ze-high-frequency, nokugcina ukusebenza ngaphansi kwezimo ezimbi kakhulu. ukuze kunwetshwe impilo yedivayisi.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-2inch SiC mosfet wafers zimi kanje;.

I-High Thermal Conductivity: Iqinisekisa ukuphathwa okushisayo okuphumelelayo, ithuthukisa ukwethembeka nokusebenza kwedivayisi

I-High Electron Mobility: Inika amandla ukushintshwa kwe-elekthronikhi okunesivinini esikhulu, kulungele izinhlelo zokusebenza ze-high-frequency

Ukuzinza Kwekhemikhali: Igcina ukusebenza ngaphansi kwezimo ezimbi kakhulu ubude bempilo yedivayisi

Ukuhambisana: Iyahambisana nokuhlanganiswa kwe-semiconductor okukhona nokukhiqizwa ngobuningi

I-2inch, 3inch, 4inch, 6inch, 8inch SiC mosfet wafers isetshenziswa kabanzi kulezi zindawo ezilandelayo: amamojula amandla ezimoto zikagesi,ahlinzeka ngezinhlelo zamandla ezinzile futhi ezisebenzayo,ama-inverters amasistimu wamandla avuselelekayo, ukwandisa ukuphathwa kwamandla nokusebenza kahle kokuguqulwa,

I-SiC wafer kanye ne-Epi-layer wafer ye-satellite kanye ne-aerospace electronics, iqinisekisa ukuxhumana okuthembekile kwe-high-frequency.

Izinhlelo zokusebenza ze-Optoelectronic zamalaser asebenza kahle kakhulu nama-LED, ahlangabezana nezidingo zokukhanyisa okuthuthukile nobuchwepheshe bokubonisa.

Ama-wafers ethu e-SiC substrates ayinketho efanelekile yama-electronics amandla kanye namadivayisi e-RF, ikakhulukazi lapho ukwethembeka okuphezulu nokusebenza okukhethekile kuyadingeka. Iqoqo ngalinye lama-wafers lihlolwa kanzima ukuze kuqinisekiswe ukuthi ahlangabezana namazinga aphezulu kakhulu.

Amawafa ethu angu-2inch, 3inch, 4inch, 6inch, 8inch 4H-N uhlobo lwe-D-grade kanye ne-P-grade SiC ayikhethelo eliphelele lezinhlelo zokusebenza ze-semiconductor ezisebenza kahle kakhulu. Ngekhwalithi yekristalu ehlukile, ukulawulwa kwekhwalithi okuqinile, izinsizakalo zokwenza ngokwezifiso, kanye nezinhlelo zokusebenza ezahlukahlukene, singahlela nokwenza ngokwezifiso ngokwezidingo zakho. Imibuzo yamukelekile!