I-SiC substrate i-Dia200mm 4H-N ne-HPSI Silicon carbide

Incazelo emfushane:

I-Silicon carbide substrate (i-SiC wafer) iyimpahla ye-semiconductor ene-bandgap ebanzi enezakhiwo ezinhle kakhulu zomzimba namakhemikhali, evelele ikakhulukazi endaweni yokushisa ephezulu, i-high-frequency, amandla aphezulu, kanye nezindawo ezinemisebe ephezulu. I-4H-V ingesinye sezinhlaka ezicwebezelayo ze-silicon carbide. Ukwengeza, ama-substrates e-SiC ane-conductivity enhle ye-thermal, okusho ukuthi angakwazi ukuqeda ngokuphumelelayo ukushisa okukhiqizwa amadivayisi ngesikhathi sokusebenza, ngokuqhubekayo athuthukise ukwethembeka nempilo yokuphila yamadivayisi.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-4H-N kanye ne-HPSI iyi-polytype ye-silicon carbide (SiC), enesakhiwo se-crystal lattice esihlanganisa amayunithi angama-hexagonal akhiwe ama-athomu amane e-carbon kanye nama-silicon amane. Lesi sakhiwo sinikeza i-material ukuhamba okuhle kakhulu kwe-electron kanye nezici zokwehla kwamandla kagesi. Phakathi kwawo wonke ama-polytypes e-SiC, i-4H-N ne-HPSI isetshenziswa kabanzi emkhakheni we-electronics yamandla ngenxa ye-electron yayo elinganiselwe kanye nokuhamba kwembobo kanye nokuhamba okuphezulu kokushisa.

Ukuvela kwama-substrates angu-8inch SiC kumele intuthuko enkulu embonini ye-semiconductor yamandla. Izinto zosiko ze-semiconductor ezisekelwe ku-silicon zithola ukwehla okukhulu ekusebenzeni ngaphansi kwezimo ezimbi kakhulu njengamazinga okushisa aphezulu nama-voltage aphezulu, kuyilapho ama-substrates e-SiC akwazi ukugcina ukusebenza kwawo okuhle kakhulu. Uma kuqhathaniswa nama-substrates amancane, ama-substrates angu-8inch SiC anikeza indawo enkulu yokucubungula ucezu olulodwa, okuhumushela ekusebenzeni kahle okuphezulu kokukhiqiza kanye nezindleko eziphansi, okubalulekile ekuqhubekiseni inqubo yokuthengisa yobuchwepheshe be-SiC.

Ubuchwepheshe bokukhula be-8inch silicon carbide (SiC) substrates budinga ukunemba nokuhlanzeka okuphezulu kakhulu. Izinga le-substrate lithinta ngokuqondile ukusebenza kwamadivayisi alandelayo, ngakho abakhiqizi kufanele basebenzise ubuchwepheshe obuthuthukisiwe ukuze baqinisekise ukuphelela kwekristalu nokuminyana okunesici esiphansi sama-substrate. Lokhu ngokuvamile kuhilela izinqubo eziyinkimbinkimbi ze-chemical vapor deposition (CVD) kanye nokukhula kwekristalu okunembile nezindlela zokusika. Ama-substrates e-4H-N kanye ne-HPSI SiC asetshenziswa kakhulu ikakhulukazi emkhakheni wezinto zikagesi zamandla, njengeziguquli zamandla asebenza kahle kakhulu, iziguquli zokudonsa ezimotweni zikagesi, nezinhlelo zamandla avuselelekayo.

Singahlinzeka nge-4H-N 8inch SiC substrate, amamaki ahlukene amawafa esitokwe angaphansi. Futhi singahlela ukwenza ngokwezifiso ngokwezidingo zakho. Siyakwamukela uphenyo!