Isithando somlilo se-SiC crystal I-SiC Ingot ekhulisa i-4inch 6inch 8inch PTV Lely TSSG LPE indlela yokukhula

Isithando somlilo se-SiC crystal I-SiC Ingot ekhulayo 4inch 6inch 8inch PTV Lely TSSG LPE indlela yokukhula Isithombe Esifakiwe

Incazelo emfushane:

Ukukhula kwekristalu ye-silicon carbide (SiC) kuyisinyathelo esibalulekile ekulungiseni izinto ezisebenza kahle kakhulu ze-semiconductor. Ngenxa yezinga eliphezulu lokuncibilika kwe-SiC (cishe i-2700 ° C) kanye nesakhiwo se-polytypic esiyinkimbinkimbi (isb. 4H-SiC, 6H-SiC), ubuchwepheshe bokukhula kwekristalu bunobunzima obukhulu. Njengamanje, izindlela eziyinhloko zokukhula zifaka indlela yokudlulisa umhwamuko obonakalayo (PTV), indlela ye-Lely, indlela yokukhula kwesixazululo sembewu ephezulu (TSSG) kanye nendlela ye-liquid phase epitaxy (LPE). Indlela ngayinye inezinzuzo zayo kanye nokubi futhi ifanele izidingo zohlelo lokusebenza ezahlukene.

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Izindlela eziyinhloko zokukhula kwekristalu nezici zazo

(1) Indlela Yokudlulisa Umhwamuko Womzimba (PTV)
Isimiso: Emazingeni okushisa aphezulu, impahla eluhlaza ye-SiC ingena esigabeni segesi, esibuye sifakwe kabusha kukristalu lwembewu.
Izici eziyinhloko:
Izinga lokushisa eliphezulu lokukhula (2000-2500°C).
Ikhwalithi ephezulu, usayizi omkhulu we-4H-SiC kanye namakristalu we-6H-SiC angatshalwa.
Izinga lokukhula lihamba kancane, kodwa ikhwalithi yekristalu iphezulu.
Isicelo: Isetshenziswa kakhulu ku-semiconductor yamandla, amadivaysi e-RF nezinye izinkambu eziphezulu.

(2) Indlela ye-Lely
Isimiso: Amakristalu akhuliswa ngokuzenzekela kwe-sublimation kanye nokwenziwa kabusha kwezimpushana ze-SiC emazingeni okushisa aphezulu.
Izici eziyinhloko:
Inqubo yokukhula ayidingi imbewu, futhi ubukhulu bekristalu buncane.
Izinga lekristalu liphezulu, kodwa ukusebenza kahle kokukhula kuphansi.
Ifanele ucwaningo lwaselabhorethri kanye nokukhiqizwa kwenqwaba encane.
Isicelo: Isetshenziswa kakhulu ocwaningweni lwesayensi nasekulungiseleleni amakristalu amancane we-SiC.

(3) Indlela Yokukhulisa Isixazululo Sembewu Ephezulu (TSSG)
Isimiso: Esixazululweni sezinga lokushisa eliphezulu, impahla eluhlaza ye-SiC iyancibilika futhi icwebezele kukristalu lwembewu.
Izici eziyinhloko:
Izinga lokushisa lokukhula liphansi (1500-1800°C).
Ikhwalithi ephezulu, amakristalu e-SiC anesici esiphansi angatshalwa.
Izinga lokukhula lihamba kancane, kodwa ukufana kwekristalu kuhle.
Isicelo: Ilungele ukulungiswa kwamakristalu e-SiC ekhwalithi ephezulu, njengamadivayisi we-optoelectronic.

(4) I-Liquid Phase epitaxy (LPE)
Isimiso: Kusisombululo sensimbi esiwuketshezi, ukukhula kwe-epitaxial kwempahla eluhlaza ye-SiC ku-substrate.
Izici eziyinhloko:
Izinga lokushisa lokukhula liphansi (1000-1500°C).
Izinga lokukhula okusheshayo, elifanele ukukhula kwefilimu.
Izinga lekristalu liphezulu, kodwa ukujiya kunqunyelwe.
Isicelo: Isetshenziselwa kakhulu ukukhula kwe-epitaxial yamafilimu e-SiC, njengezinzwa namadivayisi we-optoelectronic.

Izindlela eziyinhloko zokusebenzisa i-silicon carbide crystal furnace

I-SiC crystal furnace iyisisetshenziswa esiyinhloko sokulungiselela amakristalu e-sic, futhi izindlela zayo eziyinhloko zokufaka zifaka:
Ukukhiqizwa kwedivayisi ye-semiconductor yamandla: Isetshenziselwa ukukhulisa amakristalu ekhwalithi ephezulu ye-4H-SiC kanye ne-6H-SiC njengezisetshenziswa ze-substrate zamadivayisi kagesi (njengama-MOSFET, ama-diode).
Izicelo: izimoto zikagesi, ama-photovoltaic inverters, izinsiza zamandla ezimboni, njll.

Ukukhiqizwa kwedivayisi ye-Rf: Isetshenziselwa ukukhulisa amakristalu e-SiC anesici esiphansi njengama-substrates kumadivayisi e-RF ukuze ahlangabezane nezidingo zemvamisa ephezulu yezokuxhumana kwe-5G, i-radar nokuxhumana ngesathelayithi.

Ukwenziwa kwedivayisi ye-Optoelectronic: Isetshenziselwa ukukhulisa amakristalu e-SiC ekhwalithi ephezulu njengezisetshenziswa ze-substrate zamaledi, izitholi ze-ultraviolet namalaser.

Ucwaningo lwesayensi nokukhiqizwa kwenqwaba encane: ocwaningweni lwaselabhorethri nokuthuthukiswa kwezinto ezintsha ukuze kusekelwe ukuqanjwa kabusha kanye nokwenza kahle kobuchwepheshe bokukhula kwekristalu ye-SiC.

Ukukhiqizwa kwedivayisi yokushisa okuphezulu: Isetshenziselwa ukukhulisa amakristalu e-SiC amelana nezinga lokushisa eliphezulu njengento eyisisekelo ye-aerospace nezinzwa zokushisa okuphezulu.

Imishini yesithando somlilo we-SiC kanye nezinsizakalo ezihlinzekwa yinkampani

I-XKH igxile ekuthuthukisweni nasekukhiqizeni okokusebenza kwe-SIC crystal furnace, ihlinzeka ngalezi zinsizakalo ezilandelayo:

Imishini eyenziwe ngokwezifiso: I-XKH ihlinzeka ngezithando zokukhula ezingokwezifiso ezinezindlela ezihlukahlukene zokukhula ezifana ne-PTV ne-TSSG ngokuvumelana nezidingo zamakhasimende.

Usekelo lobuchwepheshe: I-XKH ihlinzeka amakhasimende ngosekelo lwezobuchwepheshe kuyo yonke inqubo kusukela ekuthuthukisweni kwenqubo yokukhula kwekristalu kuya ekulungiseni okokusebenza.

Izinsizakalo Zokuqeqesha: I-XKH inikeza ukuqeqeshwa kokusebenza kanye neziqondiso zezobuchwepheshe kumakhasimende ukuze kuqinisekiswe ukusebenza kahle kwemishini.

Isevisi yangemuva kokuthengisa: I-XKH ihlinzeka ngesevisi esabela ngokushesha ngemva kokuthengisa kanye nokuthuthukiswa kwemishini ukuze kuqinisekiswe ukuqhubeka kokukhiqizwa kwamakhasimende.

Ubuchwepheshe bokukhula kwekristalu ye-silicon carbide (njenge-PTV, i-Lely, i-TSSG, i-LPE) inezinhlelo zokusebenza ezibalulekile emkhakheni wamandla kagesi, amadivaysi e-RF kanye ne-optoelectronics. I-XKH inikeza okokusebenza kwesithando somlilo esithuthukisiwe se-SiC kanye nohlu olugcwele lwezinsizakalo zokweseka amakhasimende ekukhiqizweni okukhulu kwamakristalu e-SiC ekhwalithi ephezulu nokusiza ukuthuthukiswa kwemboni ye-semiconductor.