Isithando sokukhulisa ikristalu se-SiC Ingot growing 4inch 6inch 8inch PTV Lely TSSG LPE growth method

Isithando sokukhulisa ikristalu se-SiC Ingot esikhula ngamasentimitha angu-4 6 intshi 8 intshi PTV Lely TSSG Indlela yokukhulisa i-LPE Isithombe Esifakiwe

Incazelo emfushane:

Ukukhula kwekristalu ye-silicon carbide (SiC) kuyisinyathelo esibalulekile ekulungiseleleni izinto ze-semiconductor ezisebenza kahle kakhulu. Ngenxa yephuzu eliphezulu lokuncibilika kwe-SiC (cishe ngo-2700°C) kanye nesakhiwo esiyinkimbinkimbi se-polytypic (isb. 4H-SiC, 6H-SiC), ubuchwepheshe bokukhula kwekristalu bunobunzima obukhulu. Njengamanje, izindlela eziyinhloko zokukhula zifaka phakathi indlela yokudlulisa umhwamuko womzimba (PTV), indlela ye-Lely, indlela yokukhula kwesisombululo sembewu ephezulu (TSSG) kanye nendlela ye-liquid phase epitaxy (LPE). Indlela ngayinye inezinzuzo nezinkinga zayo futhi ifanele izidingo ezahlukene zokusetshenziswa.

Sithumelele i-imeyili

Izici

Izindlela eziyinhloko zokukhula kwekristalu kanye nezici zazo

(1) Indlela Yokudlulisa Umhwamuko Ongokomzimba (PTV)
Isimiso: Emazingeni okushisa aphezulu, izinto zokusetshenziswa ze-SiC ziyashintsha zibe yigesi, kamuva eziphinde zifakwe kukristalu yembewu.
Izici eziyinhloko:
Izinga lokushisa eliphezulu lokukhula (2000-2500°C).
Amakristalu ekhwalithi ephezulu, amakhulu angu-4H-SiC kanye no-6H-SiC angatshalwa.
Izinga lokukhula lihamba kancane, kodwa ikhwalithi yekristalu iphezulu.
Isicelo: Isetshenziswa kakhulu kuma-semiconductor wamandla, amadivayisi e-RF nakwamanye amasimu aphezulu.

(2) Indlela kaLely
Isimiso: Amakristalu akhuliswa ngokwenziwa kabusha kwe-sublimation kanye nokuvuselelwa kabusha kwe-SiC powders emazingeni okushisa aphezulu.
Izici eziyinhloko:
Inqubo yokukhula ayidingi imbewu, futhi ubukhulu bekristalu buncane.
Ikhwalithi yekristalu iphezulu, kodwa ukusebenza kahle kokukhula kuphansi.
Ifanele ucwaningo lwelabhorethri kanye nokukhiqizwa kweqembu elincane.
Isicelo: Isetshenziswa kakhulu ocwaningweni lwesayensi nasekulungiseleleni amakristalu amancane e-SiC.

(3) Indlela Yokukhulisa Isixazululo Sembewu Ephezulu (TSSG)
Isimiso: Esixazululweni sokushisa okuphezulu, izinto zokusetshenziswa ze-SiC ziyancibilika futhi ziqine kukristalu yembewu.
Izici eziyinhloko:
Izinga lokushisa lokukhula liphansi (1500-1800°C).
Amakristalu e-SiC asezingeni eliphezulu futhi angenasici angakhuliswa.
Izinga lokukhula lihamba kancane, kodwa ukufana kwekristalu kuhle.
Isicelo: Kufanelekela ukulungiswa kwamakristalu e-SiC asezingeni eliphezulu, njengamadivayisi e-optoelectronic.

(4) I-Liquid Phase epitaxy (LPE)
Isimiso: Esixazululweni sensimbi ewuketshezi, ukukhula kwe-epitaxial kwezinto zokusetshenziswa kwe-SiC ku-substrate.
Izici eziyinhloko:
Izinga lokushisa lokukhula liphansi (1000-1500°C).
Izinga lokukhula okusheshayo, elifanele ukukhula kwefilimu.
Ikhwalithi yekristalu iphezulu, kodwa ukujiya kwayo kulinganiselwe.
Isicelo: Isetshenziswa kakhulu ekukhuleni kwe-epitaxial kwamafilimu e-SiC, njengezinzwa namadivayisi e-optoelectronic.

Izindlela eziyinhloko zokusebenzisa isithando se-silicon carbide crystal

Isithando sekristalu se-SiC siwumshini oyinhloko wokulungiselela amakristalu e-sic, futhi izindlela zaso eziyinhloko zokusebenzisa zifaka:
Ukukhiqizwa kwamadivayisi e-semiconductor kagesi: Kusetshenziselwa ukukhulisa amakristalu e-4H-SiC kanye ne-6H-SiC asezingeni eliphezulu njengezinto zokwakha zamadivayisi kagesi (njenge-MOSFET, ama-diode).
Izicelo: izimoto zikagesi, ama-inverter e-photovoltaic, izinsiza zikagesi zezimboni, njll.

Ukukhiqizwa kwamadivayisi e-RF: Kusetshenziselwa ukukhulisa amakristalu e-SiC angenasici njengezinto ezisetshenziswayo zamadivayisi e-RF ukuze kuhlangatshezwane nezidingo ezivame kakhulu zokuxhumana kwe-5G, i-radar kanye nokuxhumana kwesathelayithi.

Ukukhiqizwa kwamadivayisi e-optoelectronic: Kusetshenziselwa ukukhulisa amakristalu e-SiC asezingeni eliphezulu njengezinto zokwakha ze-LED, izitholi ze-ultraviolet kanye nama-laser.

Ucwaningo lwesayensi kanye nokukhiqizwa kweqembu elincane: ucwaningo lwelabhorethri kanye nokuthuthukiswa kwezinto ezintsha ukusekela ukusungula izinto ezintsha kanye nokwenza ngcono ubuchwepheshe bokukhula kwekristalu ye-SiC.

Ukukhiqizwa kwamadivayisi okushisa okuphezulu: Kusetshenziselwa ukukhulisa amakristalu e-SiC amelana nokushisa okuphezulu njengezinto eziyisisekelo zezinzwa zezindiza kanye nezinzwa zokushisa okuphezulu.

Imishini yesithando se-SiC kanye nezinsizakalo ezinikezwa yinkampani

I-XKH igxile ekuthuthukisweni nasekukhiqizweni kwemishini ye-SIC crystal furnace, inikeza izinsizakalo ezilandelayo:

Imishini eyenziwe ngokwezifiso: I-XKH inikeza izitofu zokukhula ezenziwe ngokwezifiso ngezindlela ezahlukene zokukhula njenge-PTV kanye ne-TSSG ngokwezidingo zamakhasimende.

Usekelo lobuchwepheshe: I-XKH inikeza amakhasimende usekelo lobuchwepheshe kuyo yonke inqubo kusukela ekuthuthukisweni kwenqubo yokukhula kwekristalu kuya ekunakekelweni kwemishini.

Izinsizakalo Zokuqeqesha: I-XKH inikeza ukuqeqeshwa kokusebenza kanye nesiqondiso sobuchwepheshe kumakhasimende ukuqinisekisa ukusebenza kahle kwemishini.

Isevisi yangemva kokuthengisa: I-XKH inikeza isevisi yokuphendula ngokushesha ngemva kokuthengisa kanye nokuthuthukiswa kwemishini ukuqinisekisa ukuqhubeka kokukhiqiza kwamakhasimende.

Ubuchwepheshe bokukhulisa amakristalu e-silicon carbide (njenge-PTV, i-Lely, i-TSSG, i-LPE) bunezinhlelo zokusebenza ezibalulekile emkhakheni we-elekthronikhi yamandla, amadivayisi e-RF kanye nama-optoelectronics. I-XKH inikeza imishini ye-SiC furnace ethuthukisiwe kanye nohlu oluphelele lwezinsizakalo zokusekela amakhasimende ekukhiqizweni okukhulu kwamakristalu e-SiC asezingeni eliphezulu nokusiza ekuthuthukisweni kwemboni ye-semiconductor.