Isithando somlilo se-SiC Ingot Sezindlela Ezinkulu Zobubanzi be-SiC Crystal TSSG/LPE

I-SiC Ingot Growth Furnace ye-Large-Diameter SiC Crystal TSSG/LPE Izindlela zesithombe esifakiwe

Incazelo emfushane:

Isithando somlilo se-XKH sesigaba se-silicon carbide ingot ukukhula sisebenzisa ubuchwepheshe obuhamba phambili emhlabeni be-TSSG (Top-Seeded Solution Growth) kanye ne-LPE (Liquid Phase Epitaxy), eklanyelwe ngokukhethekile ukukhula kwekristalu eyodwa ye-SiC. Indlela ye-TSSG inika amandla ukukhula kwama-intshi angu-4-8 intshi yobubanzi obukhulu be-4H/6H-SiC ngokusebenzisa i-gradient enembile yokushisa kanye nokulawula isivinini sokuphakamisa imbewu, kuyilapho indlela ye-LPE yenza kube lula ukukhula okulawulwayo kwezendlalelo ze-SiC epitaxial emazingeni okushisa aphansi, afaneleka ngokukhethekile izingqimba ze-epitaxial ezinesici esiphansi kakhulu. Lolu hlelo lokukhula lwe-silicon carbide ingot lwesigaba se-liquid lusetshenziswe ngempumelelo ekukhiqizweni kwezimboni zamakristalu e-SiC ahlukahlukene ahlanganisa uhlobo lwe-4H/6H-N kanye nohlobo lwe-insulating engu-4H/6H-SEMI, oluhlinzeka ngezixazululo eziphelele kusukela kumishini kuya ezinqubweni.

Thumela i-imeyili kithi

Izici

Isimiso Sokusebenza

Umgomo oyinhloko wokukhula kwe-ingot ye-liquid-phase silicon carbide ingot uhilela ukuncibilikisa izinto zokusetshenziswa ze-SiC ezihlanzeke kakhulu ezinsimbi ezincibilikisiwe (isb, Si, Cr) ku-1800-2100 ° C ukuze kwakheke izixazululo ezigcwele, okulandelwa ukukhula okulawulwayo okulawulwayo kwekristalu elilodwa le-SiC kumakristalu embewu ngokusebenzisa ukuguqulwa kwe-supersaturation regradient enembile. Lobu buchwepheshe bufaneleka ngokukhethekile ukukhiqiza ukuhlanzeka okuphezulu (>99.9995%) amakristalu angawodwa angu-4H/6H-SiC anesici esiphansi sokuminyana (<100/cm²), ahlangabezana nezidingo eziqinile ze-substrate zama-electronics amandla kanye namadivayisi e-RF. Isistimu yokukhula yesigaba se-liquid inika amandla ukulawula okunembile kohlobo lwe-crystal conductivity (uhlobo lwe-N/P) kanye nokumelana nokwakheka kwesixazululo esithuthukisiwe nemingcele yokukhula.

Izingxenye Eziyinhloko

1. I-Special Crucible System: I-high-purity graphite/tantalum composite crucible, ukumelana nezinga lokushisa>2200 ° C, ukumelana nokugqwala kwe-SiC.

2. Uhlelo Lokushisa Lwezindawo Eziningi: Ukumelana okuhlanganisiwe / ukushisa okufakwayo ngokunemba kokulawula izinga lokushisa kwe-± 0.5 ° C (ububanzi be-1800-2100 ° C).

3. I-Precision Motion System: Ukulawula okubili okuvala iluphu lokuzungezisa imbewu (0-50rpm) nokuphakamisa (0.1-10mm/h).

4. Uhlelo Lokulawula Umkhathi: Ukuvikelwa kwe-argon/nitrogen ephezulu, ukucindezela kokusebenza okulungiswayo (0.1-1atm).

5. Uhlelo Lokulawula Okukhaliphile: I-PLC+industrial PC isilawuli esingafuneki ngokuqapha kokukhula kwesikhathi sangempela.

6. Uhlelo Lokupholisa Olusebenzayo: Idizayini yokupholisa amanzi efakwe ngokwezigaba iqinisekisa ukusebenza okuzinzile kwesikhathi eside.

I-TSSG vs. LPE Ukuqhathanisa

Izici	Indlela ye-TSG	Indlela ye-LPE
Ukukhula Temp	2000-2100°C	1500-1800°C
Izinga Lokukhula	0.2-1mm/h	5-50μm/h
Usayizi we-Crystal	4-8 intshi ingots	50-500μm izingqimba ze-epi
Isicelo Esiyinhloko	Ukulungiswa kwe-substrate	Izendlalelo ze-epi zedivayisi yamandla
Defect Density	<500/cm²	<100/cm²
Ama-Polytypes Afanelekile	4H/6H-SiC	4H/3C-SiC

Izinhlelo zokusebenza ezibalulekile

1. Ama-Electronics Amandla: Ama-substrates angu-6-inch 4H-SiC angu-1200V+ MOSFETs/diode.

2. Amadivayisi e-5G RF: Ama-Semi-insulating SiC substrates we-base station PAs.

3. Izinhlelo zokusebenza ze-EV: Izendlalelo ze-epi eziwugqinsi (>200μm) zamamojula ebanga lezimoto.

4. Iziguquli ze-PV: Ama-substrates anesici esiphansi anika amandla >99% ukusebenza kahle kokuguqulwa.

Izinzuzo Eziyinhloko

1. Ukuphakama Kwezobuchwepheshe
1.1 Idizayini Edidiyelwe Yezindlela Eziningi
Le sistimu yokukhulisa ingot yesigaba soketshezi ye-SiC ihlanganisa ngendlela entsha ubuchwepheshe bokukhula kwekristalu be-TSSG ne-LPE. Uhlelo lwe-TSSG lusebenzisa ukukhula kwesixazululo esinembewu ephezulu ngokuncibilika okunembile kanye nokulawulwa kwe-gradient lokushisa (ΔT≤5℃/cm), okuvumela ukukhula okuzinzile kwama-ingots we-SiC angama-intshi angu-4-8 anobubanzi obungu-15-20kg wezinhlayiya ze-6H/4H-SiC. Uhlelo lwe-LPE lisebenzisa ukwakheka kwe-solvent okuthuthukisiwe (isistimu ye-alloy ye-Si-Cr) kanye nokulawulwa kwe-supersaturation (±1%) ukuze kukhule izendlalelo ze-epitaxial eziwugqinsi ezinobunzima bokuminyana okungu-<100/cm² emazingeni okushisa aphansi kakhulu (1500-1800℃).

1.2 Uhlelo Lokulawula Okukhaliphile
Ifakwe ukulawula kokukhula okuhlakaniphile kwesizukulwane sesine esifaka:
• Ukuqapha kwe-multi-spectral in-situ (400-2500nm ububanzi begagasi)
• Ukutholwa kwezinga lokuncibilika okususelwa ku-laser (±0.01mm ukunemba)
• Ukulawulwa kweluphu evalekile esekelwe ku-CCD (<±1mm ukushintshashintsha)
• Ukuthuthukiswa kwepharamitha yokukhula okunamandla e-AI (15% ukonga amandla)

2. Izinzuzo Zokusebenza Kwenqubo
2.1 Amandla Abalulekile we-TSSG Method
• Amandla osayizi omkhulu: Isekela ukukhula kwekristalu okungafika ku-8-inch nge>99.5% yokufana kobubanzi
• Ubucwebe obuphakeme: Ukuminyana kokuhlukaniswa <500/cm², ukuminyana kwe-micropipe <5/cm²
• Ukufana kwe-Doping: <8% i-n-type resistivity variation (4-inch wafers)
• Izinga lokukhula elithuthukisiwe: Okulungisekayo 0.3-1.2mm/h, 3-5× ngokushesha kunezindlela zesigaba somhwamuko

2.2 Indlela ye-LPE Amandla Abalulekile
• I-epitaxy enesici esiphansi kakhulu: Ukuminyana kwesimo sokusebenzisana <1×10¹¹cm⁻²·eV⁻¹
• Ukulawula ukujiya okunembile: 50-500μm ama-epi-layers anokwahluka okungu-<±2%
• Ukusebenza kahle kwezinga lokushisa eliphansi: 300-500℃ ngaphansi kwezinqubo ze-CVD
• Ukukhula kwesakhiwo esiyinkimbinkimbi: Isekela ukuhlangana kwe-pn, ama-superlattice, njll.

3. Ukukhiqiza Ngempumelelo Izinzuzo
3.1 Ukulawulwa Kwezindleko
• 85% ukusetshenziswa kwempahla eluhlaza (vs. 60% evamile)
• 40% ukusetshenziswa kwamandla okuphansi (uma kuqhathaniswa ne-HVPE)
• 90% isikhathi sokuphumula semishini (idizayini yemojuli inciphisa isikhathi sokuphumula)

3.2 Ukuqinisekisa Ikhwalithi
• 6σ isilawuli senqubo (CPK>1.67)
• Ukutholwa kwesici ku-inthanethi (ukulungiswa okungu-0.1μm)
• Ukulandelelwa kwedatha yenqubo egcwele (amapharamitha angu-2000+ wesikhathi sangempela)

3.3 Ukuqina
• Ihambisana ne-4H/6H/3C polytypes
• Ithuthukela kumamojula enqubo angu-12-intshi
• Isekela i-SiC/GaN hetero-integration

4. Izinzuzo Zokusebenza Kwemboni
4.1 Amadivayisi Amandla
• Ama-substrates amelana kancane (0.015-0.025Ω·cm) wamadivayisi angu-1200-3300V
• Ama-substrates afaka i-semi-insulating (>10⁸Ω·cm) wezinhlelo zokusebenza ze-RF

4.2 Emerging Technologies
• Ukuxhumana kwe-Quantum: Ama-substrates omsindo ophansi kakhulu (1/f umsindo<-120dB)
• Izindawo eziyingozi kakhulu: Amakristalu amelana nemisebe (<5% ukuwohloka ngemva kokushiswa kwe-1×10¹⁶n/cm²)

Izinsizakalo ze-XKH

1. Izinto Ezisetshenziswa Ngokwezifiso: Ukucushwa kwesistimu ye-TSSG/LPE eyenziwe ngokwezifiso.
2. Ukuqeqeshwa Kwenqubo: Izinhlelo eziphelele zokuqeqeshwa kwezobuchwepheshe.
3. Ukusekela ngemva kokuthengisa: 24/7 impendulo yobuchwepheshe nokugcinwa.
4. Izixazululo ze-Turnkey: Isevisi ye-spectrum egcwele kusukela ekufakweni kuya ekucubunguleni ukuqinisekiswa.
5. Ukunikezwa Kwempahla: 2-12 inch SiC substrates/epi-wafers etholakalayo.

Izinzuzo ezibalulekile zifaka:
• Amandla okukhula kwekristalu afika ku-8 intshi.
• Ukumelana nokufana <0.5%.
• Isikhathi sokusebenza kwezisetshenziswa >95%.
• 24/7 ukwesekwa kobuchwepheshe.