Isithando Sokutshala Esikhula Nge-SiC Ingot Sezindlela Ezinkulu Ze-SiC Crystal TSSG/LPE

Isithando Sokutshala Esikhula Ngotshani Se-SiC Ingot Sezindlela Ezinkulu Ze-SiC Crystal TSSG/LPE Isithombe Esifakiwe

Incazelo emfushane:

Isithando sokukhulisa i-ingot se-silicon carbide esisebenza nge-liquid-phase silicon sisebenzisa ubuchwepheshe obuhamba phambili emhlabeni be-TSSG (Top-Seeded Solution Growth) kanye ne-LPE (Liquid Phase Epitaxy), esenzelwe ngqo ukukhula kwekristalu elilodwa le-SiC elisezingeni eliphezulu. Indlela ye-TSSG ivumela ukukhula kwama-ingot angu-4-8 intshi amakhulu anobubanzi obungu-4H/6H-SiC ngokusebenzisa i-gradient eqondile yokushisa kanye nokulawula isivinini sokuphakamisa imbewu, kuyilapho indlela ye-LPE ikhuthaza ukukhula okulawulwayo kwezingqimba ze-epitaxial ze-SiC emazingeni okushisa aphansi, ikakhulukazi ezifanele izingqimba ze-epitaxial ezinobukhulu obuphansi kakhulu. Lolu hlelo lokukhula kwe-ingot ye-silicon carbide esisebenza nge-liquid-phase lusetshenziswe ngempumelelo ekukhiqizweni kwezimboni kwamakristalu ahlukahlukene e-SiC kufaka phakathi uhlobo lwe-4H/6H-N kanye nohlobo lokufaka i-insulating lwe-4H/6H-SEMI, oluhlinzeka ngezixazululo eziphelele kusukela emishinini kuya ezinqubweni.

Sithumelele i-imeyili

Izici

Isimiso Sokusebenza

Isimiso esiyinhloko sokukhula kwe-silicon carbide ingot yesigaba soketshezi sihilela ukuncibilikisa izinto zokusetshenziswa ze-SiC ezihlanzekile kakhulu ezinsimbini ezincibilikisiwe (isb., Si, Cr) ku-1800-2100°C ukuze kwakheke izixazululo ezigcwele, kulandelwe ukukhula okulawulwayo kwamakristalu angawodwa e-SiC kumakristalu embewu ngokusebenzisa i-gradient eqondile yokushisa kanye nomthethonqubo we-supersaturation. Lobu buchwepheshe bufaneleka kakhulu ekukhiqizeni amakristalu angawodwa e-4H/6H-SiC ahlanzekile kakhulu (>99.9995%) anobuningi obuphansi besici (<100/cm²), ahlangabezana nezidingo eziqinile ze-substrate zama-electronics kagesi kanye namadivayisi e-RF. Uhlelo lokukhula lwesigaba soketshezi luvumela ukulawulwa okunembile kohlobo lokuqhuba i-crystal (uhlobo lwe-N/P) kanye nokumelana ngokusebenzisa ukwakheka kwesisombululo okulungiselelwe kanye nemingcele yokukhula.

Izingxenye Eziyinhloko

1. Uhlelo Olukhethekile Lokucwilisa: I-graphite/tantalum composite crucible ehlanzekile kakhulu, ukumelana nokushisa >2200°C, ukumelana nokugqwala kwe-SiC okuncibilikayo.

2. Uhlelo Lokushisa Olunezindawo Eziningi: Ukushisa okuhlanganisiwe kokumelana/ukungenisa okunokunemba kokulawula izinga lokushisa okungu-±0.5°C (ububanzi buka-1800-2100°C).

3. Uhlelo Lokunyakaza Oluqondile: Ukulawula okuphindwe kabili okuvaliwe kokujikeleza imbewu (0-50rpm) kanye nokuphakamisa (0.1-10mm/h).

4. Uhlelo Lokulawula Umoya: Ukuvikelwa kwe-argon/nitrogen okuhlanzekile kakhulu, ingcindezi yokusebenza elungisekayo (0.1-1atm).

5. Uhlelo Lokulawula Oluhlakaniphile: Ukulawula okungafuneki kwe-PLC + i-PC yezimboni ngokuqapha isikhombikubona sokukhula kwesikhathi sangempela.

6. Uhlelo Lokupholisa Olusebenza Kahle: Umklamo wokupholisa amanzi olinganisiwe uqinisekisa ukusebenza okuzinzile kwesikhathi eside.

Ukuqhathaniswa kwe-TSSG vs. LPE

Izici	Indlela ye-TSSG	Indlela ye-LPE
Izinga Lokukhula	2000-2100°C	1500-1800°C
Izinga Lokukhula	0.2-1mm/h	5-50μm/h
Usayizi wekristalu	Ama-ingot angu-4-8 intshi	Izingqimba ze-epi ezingu-50-500μm
Isicelo Esiyinhloko	Ukulungiswa kwe-substrate	Izingqimba ze-epi zedivayisi yamandla
Ubuningi obuphelele	<500/cm²	<100/cm²
Ama-Polytype Afanelekile	4H/6H-SiC	4H/3C-SiC

Izinhlelo Zokusebenza Eziyinhloko

1. Amandla kagesi: ama-substrate angu-6-intshi angu-4H-SiC ama-MOSFET/diode angu-1200V+.

2. Amadivayisi e-5G RF: Izisekelo ze-SiC ezivikela kancane ama-PA esiteshini esiyisisekelo.

3. Izinhlelo Zokusebenza Ze-EV: Izingqimba ze-epi ezijiyile kakhulu (>200μm) zamamojula ebanga lezimoto.

4. Ama-PV Inverters: Ama-substrate anesici esincane avumela ukusebenza kahle kokuguqulwa okungaphezulu kuka-99%.

Izinzuzo Eziyinhloko

1. Ukuphakama Kwezobuchwepheshe
1.1 Umklamo Ohlanganisiwe Wezindlela Eziningi
Lolu hlelo lokukhula kwe-SiC ingot olunesigaba soketshezi luhlanganisa ubuchwepheshe bokukhula kwekristalu ye-TSSG kanye ne-LPE. Uhlelo lwe-TSSG lusebenzisa ukukhula kwesisombululo esihlwanyelwe phezulu ngokulawula okunembile kokuncibilika kanye nokulawula i-gradient yokushisa (ΔT≤5℃/cm), okuvumela ukukhula okuzinzile kwama-ingot e-SiC amakhulu angu-4-8 intshi anezinzuzo eziqhutshwa kanye kuphela ezingu-15-20kg zamakristalu angu-6H/4H-SiC. Uhlelo lwe-LPE lusebenzisa ukwakheka kwe-solvent okulungiselelwe kahle (uhlelo lwe-alloy lwe-Si-Cr) kanye nokulawula i-supersaturation (±1%) ukukhulisa izendlalelo ze-epitaxial eziqinile zekhwalithi ephezulu ezinobukhulu obungaphansi kuka-100/cm² emazingeni okushisa aphansi kakhulu (1500-1800℃).

1.2 Uhlelo Lokulawula Oluhlakaniphile
Ifakwe ukulawula ukukhula okuhlakaniphile kwesizukulwane sesine okuhlanganisa:
• Ukuqapha kwe-multi-spectral in-situ (ububanzi bobude be-wavelength obungu-400-2500nm)
• Ukutholwa kwezinga lokuncibilika okusekelwe ku-laser (± 0.01mm ngokunemba)
• Ukulawula i-closed loop okusekelwe ku-CCD ububanzi (<±1mm ukushintshashintsha)
• Ukuthuthukiswa kwamapharamitha okukhula asebenzisa i-AI (ukonga amandla okungu-15%)

2. Izinzuzo Zokusebenza Kwenqubo
2.1 Indlela ye-TSSG Amandla Ayinhloko
• Amandla amakhulu: Isekela ukukhula kwekristalu okungamasentimitha angu-8 ngokufana kobubanzi obungu->99.5%.
• Ukuqina okuphezulu kwekristali: Ubuningi be-dislocation <500/cm², ubuningi be-micropipe <5/cm²
• Ukufana kwe-doping: <8% ukuhlukahluka kokumelana nohlobo lwe-n (ama-wafer angu-4 intshi)
• Izinga lokukhula elilungiselelwe: Lingalungiseka kusuka ku-0.3 kuya ku-1.2mm/h, ngokushesha okungu-3 kuya ku-5× kunezindlela zesigaba somswakama

2.2 Indlela ye-LPE Amandla Ayisisekelo
• I-epitaxy yesici esiphansi kakhulu: Ubuningi besimo se-interface <1×10¹¹cm⁻²·eV⁻¹
• Ukulawula ukujiya okunembile: Izingqimba ze-epi ezingu-50-500μm ezinokwehluka kobukhulu obungaphansi kuka-±2%.
• Ukusebenza kahle kwezinga lokushisa eliphansi: 300-500℃ ngaphansi kunezinqubo ze-CVD
• Ukukhula kwesakhiwo okuyinkimbinkimbi: Kusekela ama-pn junctions, ama-superlattice, njll.

3. Izinzuzo Zokusebenza Kahle Kokukhiqiza
3.1 Ukulawulwa Kwezindleko
• Ukusetshenziswa kwezinto zokusetshenziswa ezingavuthiwe okungu-85% (uma kuqhathaniswa no-60% ojwayelekile)
• Ukusetshenziswa kwamandla okuphansi ngo-40% (uma kuqhathaniswa ne-HVPE)
• Isikhathi sokusebenza semishini esingu-90% (umklamo we-modular unciphisa isikhathi sokusebenza)

3.2 Ukuqinisekiswa Kwekhwalithi
• Ukulawulwa kwenqubo okungu-6σ (CPK>1.67)
• Ukutholwa kwephutha ku-inthanethi (ukulungiswa okungu-0.1μm)
• Ukulandelelwa kwedatha okugcwele (amapharamitha esikhathi sangempela angaphezu kuka-2000)

3.3 Ukusabalala
• Iyahambisana nama-polytype angu-4H/6H/3C
• Ingathuthukiswa ibe amamojula enqubo angu-12-intshi
• Isekela ukuhlanganiswa kwe-SiC/GaN hetero

4. Izinzuzo Zokusetshenziswa Kwemboni
4.1 Amadivayisi Amandla
• Izisekelo eziqinile ezingamelani nokumelana (0.015-0.025Ω·cm) zamadivayisi angu-1200-3300V
• Izisekelo ezivikela kancane (>10⁸Ω·cm) zezinhlelo zokusebenza ze-RF

4.2 Ubuchwepheshe Obusha
• Ukuxhumana kwe-Quantum: Izisekelo zomsindo ophansi kakhulu (umsindo ongu-1/f<-120dB)
• Izindawo ezibucayi kakhulu: Amakristalu amelana nemisebe (<5% ukuwohloka ngemva kokushiswa kwemisebe okungu-1×10¹⁶n/cm²)

Izinsizakalo ze-XKH

1. Imishini Eyenziwe Ngokwezifiso: Ukucushwa kwesistimu ye-TSSG/LPE okulungiselelwe wena.
2. Ukuqeqeshwa Kwenqubo: Izinhlelo zokuqeqesha zobuchwepheshe eziphelele.
3. Ukusekelwa Kwangemva Kokuthengisa: Impendulo yobuchwepheshe kanye nokugcinwa amahora angama-24 ngosuku, izinsuku eziyi-7 ngesonto.
4. Izixazululo ze-Turnkey: Isevisi egcwele ama-spectrum kusukela ekufakweni kuya ekuqinisekisweni kwenqubo.
5. Izinto Ezitholakalayo: Ama-substrate/ama-epi-wafer angu-2-12 intshi e-SiC ayatholakala.

Izinzuzo ezibalulekile zifaka:
• Amandla okukhula kwekristalu angafika ku-8 intshi.
• Ukufana kokumelana <0.5%.
• Isikhathi sokusebenza kwemishini >95%.
• Usekelo lobuchwepheshe olusebenza amahora angu-24 ngosuku, izinsuku eziyi-7 ngesonto.