Uhlobo lwe-SiC Ingot 4H Dia 4inch 6inch Ubukhulu 5-10mm Ucwaningo / Ibanga Eliyindilinga

Uhlobo lwe-SiC Ingot 4H Dia 4inch 6inch Ukujiya 5-10mm Ucwaningo / Ibanga Eliyindilinga Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon Carbide (i-SiC) ivele njengento ebalulekile ekusetshenzisweni kwe-elekthronikhi okuthuthukisiwe kanye ne-optoelectronic ngenxa yezakhiwo zayo eziphezulu zikagesi, ukushisa, kanye nezokukhanda. I-4H-SiC Ingot, etholakala ngobubanzi obungu-4-intshi no-6-intshi enobukhulu obungu-5-10 mm, iwumkhiqizo oyisisekelo wezinjongo zocwaningo kanye nentuthuko noma njengento yezinga eliyindilinga. Le ingot yenzelwe ukuhlinzeka abacwaningi kanye nabakhiqizi ngezingxenye ze-SiC ezisezingeni eliphezulu ezifanele ukwenziwa kwedivayisi yesibonelo, izifundo zokuhlola, noma izinqubo zokulinganisa kanye nokuhlola. Ngesakhiwo sayo esiyingqayizivele sekristalu eliyindilinga, ingot ye-4H-SiC inikeza ukusetshenziswa okubanzi kuma-elekthronikhi anamandla, amadivayisi anemvamisa ephezulu, kanye nezinhlelo ezimelana nemisebe.

Sithumelele i-imeyili

Izici

Izakhiwo

1. Isakhiwo sekristalu kanye nokuqondiswa
Uhlobo lwe-polytype: 4H (isakhiwo esinama-hexagonal)
Ama-Lattice Constants:
a = 3.073 Å
c = 10.053 Å
Ukuqondiswa: Ngokuvamile [0001] (i-C-plane), kodwa ezinye izindlela zokuqondiswa ezifana ne-[11\overline{2}0] (i-A-plane) nazo ziyatholakala uma ziceliwe.

2. Ubukhulu Bomzimba
Ububanzi:
Izinketho ezijwayelekile: amayintshi angu-4 (100 mm) kanye nama-intshi angu-6 (150 mm)
Ubukhulu:
Itholakala ngobukhulu obungu-5-10 mm, ingenziwa ngokwezifiso kuye ngezidingo zohlelo lokusebenza.

3. Izakhiwo Zikagesi
Uhlobo Lokudosa: Lutholakala ngohlobo lwe-intrinsic (oluyi-semi-insulating), uhlobo lwe-n (oluyi-nitrogen), noma uhlobo lwe-p (oluyi-aluminium noma i-boron).

4. Izakhiwo Zokushisa Nezomshini
Ukushisa: 3.5-4.9 W/cm·K ekamelweni lokushisa, okuvumela ukushabalalisa ukushisa okuhle kakhulu.
Ukuqina: Isikali se-Mohs singu-9, okwenza i-SiC ibe ngeyesibili ngemuva kwedayimane ngokuqina.

Ipharamitha	Imininingwane	Iyunithi
Indlela Yokukhula	I-PVT (Ukuthutha Umusi Ongokwenyama)
Ububanzi	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Uhlobo lwe-Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Ukuqondiswa Komphezulu	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (abanye)	izinga
Uhlobo	Uhlobo lwe-N
Ubukhulu	5-10 / 10-15 / >15	mm
Ukuqondiswa Okuyisisekelo Okuyisicaba	(10-10) ± 5.0˚	izinga
Ubude Obuphansi Obuyinhloko	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Ukuqondiswa Kwesibili Okuyisicaba	90˚ CCW kusukela ekuqondisweni ± 5.0˚	izinga
Ubude Besibili Obuyisicaba	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Akukho (150 mm)	mm
Ibanga	Ucwaningo / I-Dummy

Izicelo

1. Ucwaningo Nentuthuko

Ingot yebanga locwaningo ye-4H-SiC ilungele amalebhu ezemfundo nawezimboni agxile ekuthuthukisweni kwamadivayisi asekelwe ku-SiC. Ikhwalithi yayo ephezulu yekristalu ivumela ukuhlolwa okunembile kwezakhiwo ze-SiC, njenge:
Izifundo zokuhamba kwenkampani.
Amasu okuhlukanisa amaphutha nokunciphisa.
Ukuthuthukisa izinqubo zokukhula kwe-epitaxial.

2. I-Dummy Substrate
I-ingot yezinga eliyi-dummy isetshenziswa kabanzi ekuhlolweni, ekulinganisweni, kanye nasekusetshenzisweni kwe-prototyping. Kuyindlela engcono kakhulu yezindleko:
Ukulinganiswa kwepharamitha yenqubo ku-Chemical Vapor Deposition (CVD) noma i-Physical Vapor Deposition (PVD).
Ukuhlola izinqubo zokuqopha nokupholisha ezindaweni zokukhiqiza.

3. Amandla kagesi
Ngenxa yesikhala sayo esikhulu kanye nokushisa okuphezulu, i-4H-SiC iyitshe lesisekelo lama-electronics kagesi, njenge:
Ama-MOSFET ane-voltage ephezulu.
Ama-Diode e-Schottky Barrier (ama-SBD).
Ama-Transistors e-Junction Field-Effect (ama-JFET).
Izinhlelo zokusebenza zifaka phakathi ama-inverter ezimoto zikagesi, ama-inverter elanga, kanye nama-grid ahlakaniphile.

4. Amadivayisi Avame Kakhulu
Ukuhamba kwama-electron amaningi kanye nokulahlekelwa amandla amancane kwenza kube kuhle ku:
Ama-transistors e-Radio Frequency (RF).
Izinhlelo zokuxhumana ezingenantambo, okuhlanganisa nengqalasizinda ye-5G.
Izinhlelo zezindiza nezokuvikela ezidinga izinhlelo ze-radar.

5. Izinhlelo Ezimelana Nemisebe
Ukumelana okungokwemvelo kwe-4H-SiC ekulimaleni kwemisebe kwenza kube yinto ebaluleke kakhulu ezindaweni ezinzima ezifana nalezi:
Ihadiwe yokuhlola isikhala.
Imishini yokuqapha isikhungo samandla enuzi.
Izinto zikagesi zezinga lezempi.

6. Ubuchwepheshe Obusha
Njengoba ubuchwepheshe be-SiC buthuthuka, izinhlelo zayo zokusebenza ziyaqhubeka nokukhula zibe yimikhakha efana nalokhu:
Ucwaningo lwe-Photonics kanye ne-quantum computing.
Ukuthuthukiswa kwama-LED anamandla amakhulu kanye nezinzwa ze-UV.
Ukuhlanganiswa kwezakhiwo ze-semiconductor ezibanzi ze-bandgap.
Izinzuzo ze-4H-SiC Ingot
Ukuhlanzeka Okuphezulu: Kwenziwe ngaphansi kwezimo eziqinile ukuze kuncishiswe ukungcola kanye nobuningi beziphambeko.
Ukusabalala: Kutholakala ngobubanzi obungu-4 intshi no-6 intshi ukusekela izidingo ezijwayelekile zomkhakha kanye nezikali zocwaningo.
Ukuguquguquka: Kungashintshwa ngezinhlobo ezahlukene zokusebenzisa izidakamizwa kanye nokuqondiswa kwazo ukuze kuhlangatshezwane nezidingo ezithile zokusetshenziswa.
Ukusebenza Okuqinile: Ukuqina okuphezulu kokushisa kanye nokwemishini ngaphansi kwezimo zokusebenza ezimbi kakhulu.

Isiphetho

I-ingot ye-4H-SiC, enezakhiwo zayo eziyingqayizivele kanye nezinhlelo zokusebenza ezibanzi, iphambili ekusungulweni kwezinto ezintsha ze-elekthronikhi yesizukulwane esilandelayo kanye ne-optoelectronics. Kungakhathaliseki ukuthi isetshenziselwa ucwaningo lwezemfundo, i-prototyping yezimboni, noma ukukhiqizwa kwamadivayisi athuthukile, la ma-ingot ahlinzeka ngeplatifomu ethembekile yokusunduza imingcele yobuchwepheshe. Ngobukhulu obungenziwa ngokwezifiso, i-doping, kanye nokuqondiswa, i-ingot ye-4H-SiC yenzelwe ukuhlangabezana nezidingo ezishintshayo zemboni ye-semiconductor.
Uma unesifiso sokufunda kabanzi noma ukufaka i-oda, sicela ukhululeke ukuxhumana nathi ukuze uthole imininingwane eningiliziwe kanye nokubonisana ngobuchwepheshe.