SiC Ingot 4H uhlobo Dia 4inch 6inch Ukuqina 5-10mm Ucwaningo / Dummy Ibanga

I-SiC Ingot 4H uhlobo lwe-Dia 4inch 6inch Ukuqina 5-10mm Ucwaningo / Isithombe Esifakiwe Sebanga Le-Dummy

Incazelo emfushane:

I-Silicon Carbide (SiC) iqhamuke njengento esemqoka ezinhlelweni ezithuthukisiwe ze-elekthronikhi ne-optoelectronic ngenxa yezakhiwo zayo eziphakeme zikagesi, ezishisayo, nezomshini. I-4H-SiC Ingot, etholakala ngobubanzi obungu-4-intshi no-6-intshi enogqinsi olungu-5-10 mm, iwumkhiqizo oyisisekelo wezinjongo zocwaningo nentuthuko noma njengempahla ye-dummy-grade. Le ingot yakhelwe ukuhlinzeka abacwaningi nabakhiqizi ngama-substrates e-SiC ekhwalithi ephezulu afanele ukwenziwa kwedivayisi eyisibonelo, izifundo zokuhlola, noma ukulinganisa nezinqubo zokuhlola. Ngesakhiwo sayo esiyingqayizivele sekristalu eyi-hexagonal, ingot ye-4H-SiC inikezela ngokusebenza okubanzi kugesi wamandla, amadivaysi amaza aphezulu, kanye nezinhlelo ezimelana nemisebe.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

1. I-Crystal Structure and Orientation
I-Polytype: 4H (isakhiwo esiyi-hexagonal)
I-Lattice Constants:
= 3.073 Å
c = 10.053 Å
Umumo: Ngokuvamile i-[0001] (C-plane), kodwa okunye ukuma okufana nokuthi [11\overline{2}0] (A-plane) nakho kuyatholakala uma kuceliwe.

2. Ubukhulu bomzimba
Ububanzi:
Izinketho ezijwayelekile: 4 amayintshi (100 mm) kanye namayintshi angu-6 (150 mm)
Ubukhulu:
Itholakala kububanzi obungu-5-10 mm, ingenziwa ngendlela oyifisayo kuye ngezidingo zohlelo lokusebenza.

3. Izakhiwo zikagesi
Uhlobo lwe-Doping: Itholakala ku-intrinsic (i-semi-insulating), i-n-type (ifakwe i-nitrogen), noma uhlobo lwe-p (ifakwe i-aluminium noma i-boron).

4. Izakhiwo ezishisayo nezemishini
I-Thermal Conductivity: 3.5-4.9 W/cm·K kuzinga lokushisa legumbi, okuvumela ukulahlwa kokushisa okuhle kakhulu.
Ukuqina: Isilinganiso se-Mohs 9, okwenza i-SiC ibe yesibili kuphela kwedayimane ngobulukhuni.

Ipharamitha	Imininingwane	Iyunithi
Indlela Yokukhula	I-PVT (I-Physical Vapor Transport)
Ububanzi	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
I-Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
I-Surface Orientation	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (abanye)	iziqu
Uhlobo	N-uhlobo
Ubukhulu	5-10 / 10-15 / >15	mm
Isisekelo se-Flat Orientation	(10-10) ± 5.0˚	iziqu
Ubude Befulethi obuyisisekelo	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
I-Flat Orientation yesibili	90˚ CCW kusuka ku-orientation ± 5.0˚	iziqu
Ubude Befulethi besibili	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Lutho (150 mm)	mm
Ibanga	Ucwaningo / Dummy

Izinhlelo zokusebenza

1. Ucwaningo Nentuthuko

Ingot yebanga locwaningo 4H-SiC ilungele amalebhu ezemfundo nezimboni agxile ekuthuthukisweni kwedivayisi okusekelwe ku-SiC. Ikhwalithi yayo ephakeme yekristalu inika amandla ukuhlolwa okunembile kwezakhiwo ze-SiC, njenge:
Izifundo zokuhamba zenkampani yenethiwekhi.
Izindlela zokubonisa iphutha kanye namasu okunciphisa.
Ukuthuthukiswa kwezinqubo zokukhula kwe-epitaxial.

2. I-Dummy Substrate
I-ingot ye-dummy-grade isetshenziswa kakhulu ekuhloleni, ekulinganisweni nasekusetshenzisweni kwe-prototyping. Kungenye indlela eyongayo:
Inqubo yokulinganisa ipharamitha ku-Chemical Vapor Deposition (CVD) noma i-Physical Vapor Deposition (PVD).
Ukuhlola izinqubo zokufaka nokupholisha ezindaweni zokukhiqiza.

3. Amandla kagesi
Ngenxa ye-bandgap ebanzi kanye nokusebenza okuphezulu kwe-thermal, i-4H-SiC iyitshe legumbi lama-electronics amandla, njenge:
High-voltage MOSFETs.
I-Schottky Barrier Diodes (SBDs).
I-Junction Field-Effect Transistors (JFETs).
Izicelo zifaka ama-inverter emoto kagesi, ama-solar inverter, namagridi ahlakaniphile.

4. High-Frequency Amadivayisi
Ukuhamba kwama-electron aphezulu kanye nokulahlekelwa amandla aphansi kuyenza ifanelekele:
Ama-transistors eRadio Frequency (RF).
Amasistimu okuxhumana okungenantambo, okuhlanganisa nengqalasizinda ye-5G.
I-Aerospace nezinhlelo zokuvikela ezidinga amasistimu e-radar.

5. Izinhlelo Ezingazweli Emisebeni
Ukumelana ngokwemvelo kwe-4H-SiC nokulimala kwemisebe kuyenza ibaluleke kakhulu ezindaweni ezinokhahlo njenge:
Ihadiwe yokuhlola indawo.
Imishini yokuqapha isizinda samandla enuzi.
I-electronics yezinga lezempi.

6. Emerging Technologies
Njengoba ubuchwepheshe be-SiC buthuthuka, ukusetshenziswa kwayo kuyaqhubeka nokukhula kube yimikhakha efana nale:
Ucwaningo lwe-Photonics kanye ne-quantum computing.
Ukuthuthukiswa kwama-LED anamandla amakhulu nezinzwa ze-UV.
Ukuhlanganiswa ku-wide-bandgap semiconductor heterostructures.
Izinzuzo ze-4H-SiC Ingot
Ukuhlanzeka Okuphezulu: Kwenziwe ngaphansi kwezimo eziqinile ukuze kuncishiswe ukungcola nokuminyana okuyisici.
I-Scalability: Itholakala kuwo womabili amadayamitha angu-4-intshi no-6-intshi ukusekela izidingo ezisezingeni lomkhakha nezesilinganiso socwaningo.
I-Versatility: Ijwayela izinhlobo ezihlukahlukene ze-doping kanye nokuqondiswa ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza.
Ukusebenza Okuqinile: Ukuzinza okuphezulu kwe-thermal kanye nemishini ngaphansi kwezimo zokusebenza ezimbi kakhulu.

Isiphetho

I-4H-SiC ingot, enezici zayo ezingavamile kanye nezinhlelo zokusebenza ezihlukene, imi phambili ekusungulweni kwezinto ezintsha zama-electronics esizukulwane esilandelayo kanye ne-optoelectronics. Kungakhathaliseki ukuthi isetshenziselwa ucwaningo lwezemfundo, i-industrial prototyping, noma ukukhiqizwa kwedivayisi okuthuthukisiwe, lezi zingo zinikeza inkundla ethembekile yokuphusha imingcele yobuchwepheshe. Ngobukhulu obungenziwa ngendlela oyifisayo, i-doping, nemikhombandlela, ingot ye-4H-SiC yakhelwe ukuhlangabezana nezidingo eziguqukayo zomkhakha we-semiconductor.
Uma ungathanda ukufunda okwengeziwe noma ukufaka i-oda, sicela ukhululeke ukufinyelela ukuze uthole imininingwane enemininingwane kanye nokubonisana nobuchwepheshe.