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I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici

I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici Isithombe esifakiwe
  • I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici
  • I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici
  • I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici

Incazelo emfushane:

I-SiC Epitaxial Wafer iyisisekelo samadivayisi esimanje e-semiconductor asebenza kahle kakhulu, ikakhulukazi lawo aklanyelwe ukusebenza kwamandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezulu. Ngokufushane nge-Silicon Carbide Epitaxial Wafer, i-SiC Epitaxial Wafer iqukethe ungqimba lwe-SiC epitaxial olusezingeni eliphezulu, oluncane olukhule phezu kwe-substrate enkulu ye-SiC. Ukusetshenziswa kobuchwepheshe be-SiC Epitaxial Wafer kukhula ngokushesha ezimotweni zikagesi, kumagridi ahlakaniphile, ezinhlelweni zamandla avuselelekayo, kanye nasezindiza ngenxa yezakhiwo zayo ezisezingeni eliphezulu zomzimba neze-elekthronikhi uma kuqhathaniswa nama-wafer avamile asekelwe ku-silicon.


Izici

Umdwebo Oningiliziwe

I-SiC Epitaxial Wafer-4
I-SiC Epitaxial Wafer-6 - 副本

Isingeniso

I-SiC Epitaxial Wafer iyisisekelo samadivayisi esimanje e-semiconductor asebenza kahle kakhulu, ikakhulukazi lawo aklanyelwe ukusebenza kwamandla aphezulu, imvamisa ephezulu, kanye nokushisa okuphezulu. Ngokufushane nge-Silicon Carbide Epitaxial Wafer, i-SiC Epitaxial Wafer iqukethe ungqimba lwe-SiC epitaxial olusezingeni eliphezulu, oluncane olukhule phezu kwe-substrate enkulu ye-SiC. Ukusetshenziswa kobuchwepheshe be-SiC Epitaxial Wafer kukhula ngokushesha ezimotweni zikagesi, kumagridi ahlakaniphile, ezinhlelweni zamandla avuselelekayo, kanye nasezindiza ngenxa yezakhiwo zayo ezisezingeni eliphezulu zomzimba neze-elekthronikhi uma kuqhathaniswa nama-wafer avamile asekelwe ku-silicon.

Izimiso Zokukhiqiza ze-SiC Epitaxial Wafer

Ukudala i-SiC Epitaxial Wafer kudinga inqubo yokulawulwa kakhulu kwe-chemical vapor deposition (CVD). Ingqimba ye-epitaxial ivame ukukhuliswa ku-monocrystalline SiC substrate kusetshenziswa amagesi afana ne-silane (SiH₄), i-propane (C₃H₈), kanye ne-hydrogen (H₂) emazingeni okushisa angaphezu kuka-1500°C. Lokhu kukhula kwe-epitaxial okushisa okuphezulu kuqinisekisa ukuhambisana okuhle kwe-crystalline kanye namaphutha amancane phakathi kwengqimba ye-epitaxial kanye ne-substrate.

Le nqubo ihlanganisa izigaba eziningana ezibalulekile:

  1. Ukulungiselela i-Substrate: I-base SiC wafer iyahlanzwa futhi ipholishwe ukuze ibe bushelelezi.

  2. Ukukhula kwe-CVD: Ku-reactor ehlanzekile kakhulu, amagesi ayasabela ekubekeni ungqimba lwe-SiC oluyikristalu elilodwa ku-substrate.

  3. Ukulawulwa Kokusebenzisa Izidakamizwa: Ukufakwa kwe-doping yohlobo lwe-N noma lwe-P kungeniswa ngesikhathi se-epitaxy ukuze kufezwe izakhiwo zikagesi ezifiselekayo.

  4. Ukuhlolwa kanye ne-Metrology: I-optical microscopy, i-AFM, kanye ne-X-ray diffraction kusetshenziselwa ukuqinisekisa ukujiya kwesendlalelo, ukuhlushwa kwe-doping, kanye nobuningi beziphambeko.

I-SiC Epitaxial Wafer ngayinye iqashwe ngokucophelela ukuze kugcinwe ukubekezelelana okuqinile kokujiya okufanayo, ukuthamba kwendawo, kanye nokumelana. Ikhono lokulungisa la mapharamitha libalulekile kuma-MOSFET ane-voltage ephezulu, ama-diode e-Schottky, namanye amadivayisi kagesi.

Imininingwane

Ipharamitha Imininingwane
Izigaba Isayensi Yezinto Ezisetshenziswayo, Izisekelo Eziyikristalu Elilodwa
Uhlobo lwe-Polytype 4H
Ukuphuza izidakamizwa Uhlobo lwe-N
Ububanzi 101 mm
Ukubekezelelana kobubanzi ± 5%
Ubukhulu 0.35 mm
Ukubekezelela Ubukhulu ± 5%
Ubude Obuphansi Obuyinhloko 22 mm (± 10%)
I-TTV (Ukwehluka Kobukhulu Obuphelele) ≤10 µm
I-Warp ≤25 µm
I-FWHM ≤30 Arc-sec
Ukuqedwa Komphezulu I-Rq ≤0.35 nm

Ukusetshenziswa kwe-SiC Epitaxial Wafer

Imikhiqizo ye-SiC Epitaxial Wafer ibaluleke kakhulu emikhakheni eminingi:

  • Izimoto Zikagesi (ama-EV): Amadivayisi asekelwe ku-SiC Epitaxial Wafer andisa ukusebenza kahle kwe-powertrain futhi anciphise isisindo.

  • Amandla Avuselelekayo: Isetshenziswa kuma-inverter ezinhlelo zamandla elanga nawomoya.

  • Izimpahla Zamandla Zezimboni: Nika amandla ukushintshashintsha okuvama kakhulu, okushisa okuphezulu ngokulahlekelwa okuphansi.

  • Izindiza kanye Nokuvikela: Kuhle kakhulu ezindaweni ezinzima ezidinga ama-semiconductor aqinile.

  • Iziteshi Zesisekelo ze-5G: Izingxenye ze-SiC Epitaxial Wafer zisekela ubuningi bamandla aphezulu kuzinhlelo zokusebenza ze-RF.

I-SiC Epitaxial Wafer ivumela ukwakheka okuhlangene, ukushintsha okusheshayo, kanye nokusebenza kahle kokuguqulwa kwamandla okuphezulu uma kuqhathaniswa nama-wafer e-silicon.

Izinzuzo ze-SiC Epitaxial Wafer

Ubuchwepheshe be-SiC Epitaxial Wafer bunikeza izinzuzo ezibalulekile:

  1. I-Voltage Ephezulu Yokuqhekeka: Imelana nama-voltage afinyelela ku-10 aphezulu kune-Si wafers.

  2. Ukuqhuba Okushisayo: I-SiC Epitaxial Wafer isusa ukushisa ngokushesha, ivumela amadivayisi ukuthi asebenze epholile futhi enokwethenjelwa kakhudlwana.

  3. Isivinini Sokushintsha Esiphezulu: Ukulahlekelwa okuphansi kokushintsha kwenza kube nokusebenza kahle okuphezulu kanye nokunciphisa amandla okusebenza.

  4. Igebe Elibanzi: Iqinisekisa ukuzinza kuma-voltage aphezulu kanye namazinga okushisa.

  5. Ukuqina Kwezinto Ezibonakalayo: I-SiC ayisebenzi ngamakhemikhali futhi inamandla ngokwemishini, ilungele ukusetshenziswa okudinga amandla.

Lezi zinzuzo zenza i-SiC Epitaxial Wafer ibe yinto ekhethwayo esizukulwaneni esilandelayo sama-semiconductor.

Imibuzo Evame Ukubuzwa: I-SiC Epitaxial Wafer

Q1: Uyini umehluko phakathi kwe-SiC wafer ne-SiC Epitaxial Wafer?
I-SiC wafer ibhekisela ku-substrate enkulu, kuyilapho i-SiC Epitaxial Wafer ihlanganisa ungqimba olukhuliswe ngokukhethekile olusetshenziswa ekwakhiweni kwedivayisi.

Q2: Yibuphi ubukhulu obutholakalayo ngezendlalelo ze-SiC Epitaxial Wafer?
Izingqimba ze-Epitaxial ngokuvamile zisukela kuma-micrometer ambalwa kuya ngaphezu kwe-100 μm, kuye ngezidingo zokusetshenziswa.

Umbuzo 3: Ingabe i-SiC Epitaxial Wafer ifanelekela izindawo ezishisa kakhulu?
Yebo, i-SiC Epitaxial Wafer ingasebenza ezimweni ezingaphezu kuka-600°C, idlula kakhulu i-silicon.

UMBUZO 4: Kungani ubuningi beziphambeko bubalulekile ku-SiC Epitaxial Wafer?
Ubuningi obuphansi besici buthuthukisa ukusebenza kwedivayisi kanye nokukhiqiza, ikakhulukazi kwizicelo ze-voltage ephezulu.

Umbuzo 5: Ingabe ama-N-type kanye nama-P-type SiC Epitaxial Wafers ayatholakala?
Yebo, zombili izinhlobo zikhiqizwa kusetshenziswa ukulawulwa kwegesi okune-dopant okunembile ngesikhathi senqubo ye-epitaxial.

Q6: Yimaphi amasayizi e-wafer ajwayelekile e-SiC Epitaxial Wafer?
Ububanzi obujwayelekile buhlanganisa amasentimitha angu-2, amasentimitha angu-4, amasentimitha angu-6, kanye namasentimitha angu-8 ayandayo ekukhiqizeni okuphezulu.

Umbuzo 7: I-SiC Epitaxial Wafer iyithinta kanjani izindleko kanye nokusebenza kahle?
Nakuba ekuqaleni ibiza kakhulu kune-silicon, i-SiC Epitaxial Wafer inciphisa usayizi wesistimu kanye nokulahlekelwa amandla, okuthuthukisa ukusebenza kahle kwezindleko esikhathini eside.

  • Okwedlule:
  • Olandelayo:

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