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I-SiC Epitaxial Wafer Yamadivayisi Amandla – 4H-SiC, N-type, Low Defect Density

I-SiC Epitaxial Wafer Yamadivayisi Amandla – 4H-SiC, N-type, Low Defect Density Isithombe Esifakiwe
  • I-SiC Epitaxial Wafer Yamadivayisi Amandla – 4H-SiC, N-type, Low Defect Density
  • I-SiC Epitaxial Wafer Yamadivayisi Amandla – 4H-SiC, N-type, Low Defect Density
  • I-SiC Epitaxial Wafer Yamadivayisi Amandla – 4H-SiC, N-type, Low Defect Density

Incazelo emfushane:

I-SiC Epitaxial Wafer iwumgogodla wamadivayisi wesimanje we-semiconductor asebenza kahle kakhulu, ikakhulukazi lawo aklanyelwe ukusebenza kwamandla aphezulu, amaza aphezulu, kanye nezinga lokushisa eliphezulu. Ifushane nge-Silicon Carbide Epitaxial Wafer, i-SiC Epitaxial Wafer iqukethe ungqimba lwe-SiC epitaxial lwekhwalithi ephezulu, oluncane olukhule phezu kwenqwaba ye-SiC substrate. Ukusetshenziswa kobuchwepheshe be-SiC Epitaxial Wafer kukhula ngokushesha ezimotweni zikagesi, amagridi ahlakaniphile, izinhlelo zamandla avuselelekayo, kanye ne-aerospace ngenxa yezakhiwo zayo eziphakeme zomzimba neze-elekthronikhi uma kuqhathaniswa namawafa ajwayelekile asekelwe ku-silicon.


Izici

Umdwebo onemininingwane

I-SiC Epitaxial Wafer-4
I-SiC Epitaxial Wafer-6 - 副本

Isingeniso

I-SiC Epitaxial Wafer iwumgogodla wamadivayisi wesimanje we-semiconductor asebenza kahle kakhulu, ikakhulukazi lawo aklanyelwe ukusebenza kwamandla aphezulu, amaza aphezulu, kanye nezinga lokushisa eliphezulu. Ifushane nge-Silicon Carbide Epitaxial Wafer, i-SiC Epitaxial Wafer iqukethe ungqimba lwe-SiC epitaxial lwekhwalithi ephezulu, oluncane olukhule phezu kwenqwaba ye-SiC substrate. Ukusetshenziswa kobuchwepheshe be-SiC Epitaxial Wafer kukhula ngokushesha ezimotweni zikagesi, amagridi ahlakaniphile, izinhlelo zamandla avuselelekayo, kanye ne-aerospace ngenxa yezakhiwo zayo eziphakeme zomzimba neze-elekthronikhi uma kuqhathaniswa namawafa ajwayelekile asekelwe ku-silicon.

Izimiso Zokwenziwa Kwe-SiC Epitaxial Wafer

Ukudala i-SiC Epitaxial Wafer kudinga inqubo elawulwa kakhulu ye-chemical vapor deposition (CVD). I-epitaxial layer ivame ukukhuliswa ku-monocrystalline SiC substrate kusetshenziswa amagesi afana ne-silane (SiH₄), i-propane (C₃H₈), ne-hydrogen (H₂) emazingeni okushisa angaphezu kuka-1500 ° C. Lokhu kukhula kwe-epitaxial ephezulu yokushisa kuqinisekisa ukuqondana okuhle kakhulu kwekristalu kanye nokukhubazeka okuncane phakathi kongqimba lwe-epitaxial kanye ne-substrate.

Inqubo ihlanganisa izigaba ezimbalwa ezibalulekile:

  1. Ukulungiselela I-substrate: I-wafer ye-SiC eyisisekelo iyahlanzwa futhi ipholishwe ukuze ibe bushelelezi be-athomu.

  2. Ukukhula kwe-CVD: Ku-reactor ehlanzeke kakhulu, amagesi asabela ukuze afake isendlalelo se-SiC sekristalu eyodwa endaweni engaphansi.

  3. I-Doping Control: I-N-type noma i-P-type doping yethulwa ngesikhathi se-epitaxy ukuze kuzuzwe izakhiwo zikagesi ezifiselekayo.

  4. Ukuhlola kanye ne-Metrology: Imicroscopy yamehlo, i-AFM, kanye ne-X-ray diffraction isetshenziselwa ukuqinisekisa ukujiya kongqimba, ukugxiliswa kwe-doping, nokuminyana kokukhubazeka.

I-SiC Epitaxial Wafer ngayinye igadwa ngokucophelela ukuze kugcinwe ukubekezelelana okuqinile kokufana kogqinsi, ukucaba kwendawo, kanye nokumelana. Ikhono lokushuna kahle lezi zinhlaka libalulekile kuma-MOSFET anevolthi ephezulu, ama-Schottky diode, namanye amadivayisi kagesi.

Ukucaciswa

Ipharamitha Ukucaciswa
Izigaba Isayensi Yezinto Zokusebenza, I-Single Crystal Substrates
I-Polytype 4H
I-Doping Uhlobo lwe-N
Ububanzi 101 mm
Ukubekezelela Ububanzi ± 5%
Ubukhulu 0.35 mm
Ukujiya Ukubekezelelana ± 5%
Ubude Befulethi obuyisisekelo 22 mm (± 10%)
I-TTV (Ukuhlukahluka Kokuqina Kokuphelele) ≤10 µm
I-Wap ≤25µm
I-FWHM ≤30 Arc-sec
I-Surface Qeda Rq ≤0.35 nm

Izicelo ze-SiC Epitaxial Wafer

Imikhiqizo ye-SiC Epitaxial Wafer ibalulekile emikhakheni eminingi:

  • Izimoto zikagesi (EVs): Amadivayisi asekelwe ku-SiC Epitaxial Wafer akhuphula ukusebenza kahle kwe-powertrain futhi ehlise isisindo.

  • Amandla Avuselelekayo: Isetshenziswa kuma-inverters kumasistimu wamandla elanga nawomoya.

  • Izimpahla Zamandla Ezimboni: Nika amandla ukushintsha kwe-high-frequency, izinga lokushisa eliphezulu nokulahlekelwa okuphansi.

  • I-Aerospace kanye Nezokuvikela: Ilungele izindawo ezinokhahlo ezidinga ama-semiconductors aqinile.

  • Iziteshi eziyisisekelo ze-5G: Izingxenye ze-SiC Epitaxial Wafer zisekela ukuminyana kwamandla okuphezulu kwezinhlelo zokusebenza ze-RF.

I-SiC Epitaxial Wafer inika amandla imiklamo ehlangene, ukushintsha ngokushesha, nokusebenza kahle kokuguqulwa kwamandla uma kuqhathaniswa namawafa e-silicon.

Izinzuzo ze-SiC Epitaxial Wafer

Ubuchwepheshe be-SiC Epitaxial Wafer bunikeza izinzuzo ezibalulekile:

  1. High Breakdown Voltage: Imelana nama-voltage afika ngokuphindwe ka-10 ngaphezu kwama-wafers we-Si.

  2. I-Thermal Conductivity: I-SiC Epitaxial Wafer ihlakaza ukushisa ngokushesha, ivumela amadivayisi ukuthi asebenze ngokupholile futhi ngokwethembeka nakakhulu.

  3. Isivinini Sokushintsha Okuphezulu: Ukulahlekelwa kokushintsha okuphansi kunika amandla ukusebenza kahle okuphezulu kanye ne-miniaturization.

  4. I-Bandgap ebanzi: Iqinisekisa ukuzinza kuma-voltage aphezulu namazinga okushisa.

  5. Ukuqina Kwempahla: I-SiC ayisebenzi ngamakhemikhali futhi inamandla ngokwemishini, ilungele izinhlelo zokusebenza ezifunayo.

Lezi zinzuzo zenza i-SiC Epitaxial Wafer ibe yinto yokuzikhethela esizukulwaneni esilandelayo sama-semiconductors.

I-FAQ: I-SiC Epitaxial Wafer

Q1: Uyini umehluko phakathi kwewafa ye-SiC ne-SiC Epitaxial Wafer?
I-wafer ye-SiC ibhekisela ku-substrate eyinqwaba, kuyilapho i-SiC Epitaxial Wafer ihlanganisa ungqimba olunwetshwe ngokukhethekile olusetshenziswa ekwenzeni idivayisi.

Q2: Yiziphi izingqimba ezitholakalayo zezendlalelo ze-SiC Epitaxial Wafer?
Izendlalelo ze-Epitaxial ngokuvamile zisuka kuma-micrometer ambalwa ukuya ngaphezu kuka-100 μm, kuye ngezidingo zohlelo lokusebenza.

Q3: Ingabe i-SiC Epitaxial Wafer ilungele izindawo ezinezinga lokushisa eliphezulu?
Yebo, i-SiC Epitaxial Wafer ingasebenza ngaphansi kwezimo ezingaphezulu kuka-600°C, idlula i-silicon ngokuphawulekayo.

Q4: Kungani ukuminyana kokukhubazeka kubalulekile ku-SiC Epitaxial Wafer?
Ukuminyana kokukhubazeka okuphansi kuthuthukisa ukusebenza kwedivayisi kanye nesivuno, ikakhulukazi ezinhlelweni ze-high-voltage.

Q5: Ingabe uhlobo lwe-N nohlobo lwe-P lwe-SiC Epitaxial Wafers kokubili kuyatholakala?
Yebo, zombili izinhlobo zikhiqizwa kusetshenziswa ukulawulwa kwegesi ye-dopant okunembile ngesikhathi senqubo ye-epitaxial.

Q6: Yimaphi amasayizi we-wafer ajwayelekile ku-SiC Epitaxial Wafer?
Amadayamitha ajwayelekile ahlanganisa ama-intshi angu-2, ama-intshi angu-4, ama-intshi angu-6, kanye namayintshi ayandayo angu-8 ekukhiqizeni ivolumu ephezulu.

Q7: Ngabe i-SiC Epitaxial Wafer inamthelela muni kuzindleko nokusebenza kahle?
Nakuba ekuqaleni ibiza kakhulu kune-silicon, i-SiC Epitaxial Wafer yehlisa usayizi wesistimu nokulahlekelwa kwamandla, ithuthukisa ukusebenza kahle kwezindleko eziphelele esikhathini eside.

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